Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Weight | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Data Retention Time-Min | Endurance | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Page Size | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDT71V65703S85PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.225mA | 256KX36 | 36 | 9437184 bit | 90MHz | 0.04A | 8.5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T651S12BC8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 2.5V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | Parallel | 2.6V | 2.4V | 9 Mb | 17mm | 1.4mm | CMOS | 1.5mm | 1 | 355mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 20 | 256 | COMMERCIAL | 1mm | SRAMs | 3-STATE | 12 ns | RAM, SRAM | 18b | Asynchronous | 0.01A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V016SA12YG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2011 | yes | Active | 3 (168 Hours) | 44 | 70°C | 0°C | 3.3V | 1 | 28.6mm | RoHS Compliant | Lead Free | No | 44 | Parallel | 3.6V | 3V | 1 Mb | 10.2mm | 2.9mm | CMOS | 3.683mm | 1 | 150mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 3.3V | 44 | COMMERCIAL | SRAMs | 3-STATE | 12 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 16b | Asynchronous | 16b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65603S133PFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tape & Reel | 2005 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | TQFP | Parallel | 3.465V | 3.135V | 9 Mb | 133MHz | 14mm | 1.4mm | CMOS | 1 | 300mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 4.2 ns | 133MHz | 1.1MB | RAM, SDR, SRAM | 18b | 256KX36 | Synchronous | 0.04A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
7133LA70J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 24mm | 3.63mm | CMOS | 1 | 250mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 3-STATE | 70 ns | 4kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 16b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V2556SA100BGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2011 | no | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 3.3V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 100MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 260mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 119 | INDUSTRIAL | SRAMs | 3-STATE | 5 ns | RAM, SRAM | 17b | Synchronous | 0.045A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||
.png "70T3319S166BFG8") |
70T3319S166BFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel | 2010 | Active | 70°C | 0°C | 2.5V | 2 | 15mm | RoHS Compliant | Lead Free | No | 208 | Parallel | 4 Mb | 166MHz | 15mm | 1.4mm | RAM, SRAM | 18b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7037L20PFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | LQFP | Parallel | 576 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | INDUSTRIAL | YES | 0.5mm | SRAMs | 5V | 3-STATE | RAM, SRAM | 30b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3558S133PFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2006 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 133MHz | 14mm | 1.4mm | CMOS | 1 | 300mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 4.2 ns | 133MHz | 512kB | RAM, SDR, SRAM | 18b | Synchronous | 0.04A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27LV010A-70VC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1998 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-TFSOP (0.488, 12.40mm Width) | Surface Mount | 0°C~70°C TC | EPROM - OTP | AT27LV010 | 70ns | 1Mb 128K x 8 | Non-Volatile | 3V~3.6V 4.5V~5.5V | EPROM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9359L9PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2009 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 144 kb | 14mm | 1.4mm | CMOS | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.5mm | SRAMs | 3-STATE | 9 ns | 18kB | RAM, SDR, SRAM | 26b | 8KX18 | 0.003A | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V25761S166PFGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2009 | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | No | 100 | PIPELINED ARCHITECTURE | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 166MHz | CMOS | 1 | 330mA | QUAD | GULL WING | 3.3V | INDUSTRIAL | 0.65mm | 3.5 ns | 166MHz | 512kB | RAM, SDR, SRAM | 17b | 36 | Synchronous | 36b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3577S75PFGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tape & Reel | 2009 | yes | Active | 3 (168 Hours) | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 117MHz | 14mm | 1.4mm | 265mA | e3 | Matte Tin (Sn) | 260 | 100 | 7.5 ns | RAM, SRAM | 17b | Synchronous | 36b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7025L20FB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | 2012 | no | Active | 1 (Unlimited) | 84 | 125°C | -55°C | 5V | 2 | 29.2mm | RoHS Compliant | Contains Lead | No | 84 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | Parallel | 128 kb | 29.21mm | 2.54mm | CMOS | 1 | e0 | Tin/Lead (Sn/Pb) | QUAD | FLAT | 5V | 84 | MILITARY | YES | 3-STATE | MIL-PRF-38535 | RAM, SRAM | 26b | 8KX16 | 0.004A | YES | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3556SA166BQ | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Surface Mount | 2015 | no | Active | 3 (168 Hours) | 165 | 70°C | 0°C | 3.3V | 1 | 15mm | RoHS Compliant | Contains Lead | No | 165 | Parallel | 3.465V | 3.135V | 4.5 Mb | 166MHz | 1.2mm | 13mm | 1.2mm | CMOS | 350mA | 1 | 350mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | COMMERCIAL | SRAMs | 3-STATE | 3.5 ns | 166MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.04A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53D512M32D2NP-053 WT:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 200-WFBGA (10x14.5) | 16Gb 512M x 32 | Volatile | 1.1V | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65803S133PFGI | Integrated Device Technology (IDT) | 24.4508 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2005 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | BURST COUNTER | TQFP | Parallel | 3.465V | 3.135V | 9 Mb | 133MHz | 14mm | 1.4mm | CMOS | 1 | 320mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.65mm | SRAMs | 3-STATE | 4.2 ns | 133MHz | 1.1MB | RAM, SDR, SRAM | 19b | Synchronous | 0.06A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321S55J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2001 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 3.3V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | BATTERY BACKUP;AUTOMATIC POWER DOWN | PLCC | Parallel | 3.6V | 3V | 16 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 115mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 52 | COMMERCIAL | SRAMs | 3-STATE | 55 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.005A | 8b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT41J128M8JP-125:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2001 | yes | Obsolete | 3 (168 Hours) | 78 | EAR99 | 1.5V | 1 | 11.5mm | ROHS3 Compliant | Lead Free | No | 78 | AUTO/SELF REFRESH | 78-TFBGA | 1 Gb | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | 1.2mm | 8542.32.00.32 | 1 | 145mA | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 260 | 1.5V | 30 | MT41J128M8 | 78 | 0.8mm | 1.425V | 1.575V | 3-STATE | 1Gb 128M x 8 | Volatile | 17b | 1.425V~1.575V | 128MX8 | 8 | 8b | 800MHz | 0.1 ns | COMMON | 8192 | MULTI BANK PAGE BURST | DRAM | Parallel | 8 | 8 | ||||||||||||||||||||||||||||||||||||||||||||||
 |
IS45S32200L-6TLA2 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | yes | Active | 3 (168 Hours) | 86 | 1 | 22.22mm | ROHS3 Compliant | 86 | AUTO/SELF REFRESH | 86-TFSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~105°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | DUAL | 3.3V | YES | 0.5mm | 3V | 3.6V | 5.4ns | 64Mb 2M x 32 | Volatile | 3V~3.6V | 2MX32 | 32 | 32b | 166MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AK6003AV | AKM Semiconductor Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2013 | Obsolete | 1 (Unlimited) | Surface Mount | -40°C~85°C TA | EEPROM | 8-TSSOP | 4.5μs | 2Kb 256 x 8 | Non-Volatile | 1.8V~5.5V | 400kHz | EEPROM | I2C | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V124SA15PH | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-SOIC (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V124 | 32-TSOP II | 15ns | 1Mb 128K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27C512R-70JU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 1997 | yes | Active | 2 (1 Year) | 32 | 5V | 11.5mm | ROHS3 Compliant | Lead Free | Tin | No | 32 | 32-LCC (J-Lead) | No SVHC | 512 kb | 70GHz | 3.17mm | 14.04mm | Surface Mount | -40°C~85°C TC | EPROM - OTP | 100μA | 1 | 20mA | e3 | QUAD | 245 | 5V | 40 | AT27C512 | 1.27mm | OTP ROMs | 5V | 5V | 3-STATE | 70ns | 512Kb 64K x 8 | Non-Volatile | 4.5V~5.5V | 64KX8 | 0.0001A | COMMON | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7133LA25PFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | no | Active | 3 (168 Hours) | 100 | EAR99 | 85°C | -40°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 32 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 300mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | INDUSTRIAL | 0.5mm | SRAMs | 5V | 3-STATE | 25 ns | 4kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.004A | 16b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
71024S15TYGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2013 | yes | Active | 3 (168 Hours) | 32 | 85°C | -40°C | 5V | 1 | 21.95mm | RoHS Compliant | Lead Free | No | 32 | Parallel | 5.5V | 4.5V | 1 Mb | 7.6mm | 2.67mm | CMOS | 3.76mm | 1 | 155mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 5V | 32 | INDUSTRIAL | SRAMs | 5V | 3-STATE | 15 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 17b | Asynchronous | 8b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F4T08EULCEM4-R:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Bulk | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
71256S55TDB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2011 | no | Active | 1 (Unlimited) | 28 | 125°C | -55°C | 5V | 1 | 37.72mm | RoHS Compliant | Contains Lead | No | 28 | CDIP | Parallel | 5.5V | 4.5V | 256 kb | 7.62mm | 3.56mm | CMOS | 5.08mm | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | THROUGH-HOLE | 240 | 5V | 28 | MILITARY | NO | 2.54mm | SRAMs | 5V | 3-STATE | 55 ns | MIL-STD-883 Class B | 32kB | RAM, SDR, SRAM - Asynchronous | 15b | 32KX8 | 0.02A | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C64B-15TU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Surface Mount | Tray | 1997 | yes | Active | 3 (168 Hours) | 28 | 5V | 11.8mm | ROHS3 Compliant | Lead Free | Tin | No | 28 | 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE | 28-TSSOP (0.465, 11.80mm Width) | Parallel, SPI | 64 kb | 150GHz | 8mm | Surface Mount | -40°C~85°C TC | CMOS | 1.2mm | 1 | 40mA | e3 | DUAL | 5V | AT28C64 | 0.55mm | 5V | 150ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8KX8 | 8 | 0.0001A | 10 | 100000 Write/Erase Cycles | 10ms | 5V | YES | YES | 64words | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V09L15PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | Active | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 3.6V | 3V | 1 Mb | 1.4mm | 14mm | 1.4mm | 657.000198mg | 235mA | 235mA | 15 ns | 128kB | RAM, SDR, SRAM | 17b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
71V016SA10BFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2007 | yes | Active | 3 (168 Hours) | 48 | 85°C | -40°C | 3.3V | 1 | 7mm | RoHS Compliant | Lead Free | No | 48 | Parallel | 3.6V | 3.15V | 1 Mb | 7mm | 1.4mm | CMOS | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 48 | INDUSTRIAL | 0.75mm | SRAMs | 3-STATE | 10 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 16b | Asynchronous | 16b | COMMON |
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IDT71V65703S85PF8 Integrated Device Technology (IDT)
3.3V V 100 Pin Memory IC 20mm mm
Price: 0.0000
RFQ -
70T651S12BC8 Integrated Device Technology (IDT)
Surface Mount 256 Pin Memory IC 9 Mb kb 17mm mm 355mA mA 36b b
Price: 0.0000
RFQ -
71V016SA12YG Integrated Device Technology (IDT)
Surface Mount 44 Pin Memory IC 1 Mb kb 28.6mm mm 150mA mA 16b b
Price: 0.0000
RFQ -
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