
Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
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71321LA25TFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT71321 | 64-TQFP (10x10) | 25ns | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STK11C68-SF25I | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2005 | Obsolete | 3 (168 Hours) | 28 | EAR99 | 18.3895mm | ROHS3 Compliant | 28-SOIC (0.342, 8.69mm Width) | unknown | 8.6865mm | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 2.794mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | NOT SPECIFIED | STK11C68 | 28 | YES | 1.27mm | R-PDSO-G28 | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 64Kb 8K x 8 | Non-Volatile | 0.09mA | 4.5V~5.5V | 8KX8 | 8 | 65536 bit | 0.0015A | 25 ns | NVSRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT28HC256-12JU-070 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 1997 | Active | 1 (Unlimited) | ROHS3 Compliant | 32-LCC (J-Lead) | Surface Mount | -40°C~85°C TC | EEPROM | 32-PLCC (11.43x13.97) | 120ns | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT41K512M8RH-107:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2013 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 78-TFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | MT41K512M8 | 20ns | 4Gb 512M x 8 | Volatile | 1.283V~1.45V | 933MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CY62126EV30LL-55BVXET | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | MoBL® | yes | Active | 3 (168 Hours) | 48 | EAR99 | 3V | 1 | 8mm | ROHS3 Compliant | Lead Free | 48 | 48-VFBGA | 1 Mb | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | 1 | 35mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3V | 30 | CY62126 | 0.75mm | 2.2V | Not Qualified | 3.6V | 3-STATE | 1Mb 64K x 16 | Volatile | 16b | 2.2V~3.6V | 16 | Asynchronous | 0.00003A | 55 ns | 16b | COMMON | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F256G08CMCGBJ4-37ES:G TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 132-VBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | 132-VBGA (12x18) | 256Gb 32G x 8 | Non-Volatile | 2.7V~3.6V | 267MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS8C803625A-QC75N | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2010 | yes | Active | 3 (168 Hours) | 100 | 3.3V | 20mm | ROHS3 Compliant | Lead Free | 100 | 100-LQFP | 8 Mb | 14mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | 100MHz | QUAD | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 100 | YES | 0.65mm | 3.135V | 3.465V | 7.5ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 256KX36 | 36 | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SM662PEA-BD | Silicon Motion, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT24C16D-PUM | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tube | 1997 | yes | Active | 1 (Unlimited) | 8 | 9.271mm | ROHS3 Compliant | 8-DIP (0.300, 7.62mm) | 2-Wire, I2C, Serial | 7.62mm | Through Hole | -40°C~85°C TC | CMOS | SYNCHRONOUS | 5.33mm | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | NOT APPLICABLE | 1.8V | NOT APPLICABLE | AT24C16D | NO | 2.54mm | R-PDIP-T8 | 1.7V | Not Qualified | 1.8/3.3V | 3.6V | 450ns | 16Kb 2K x 8 | Non-Volatile | 0.001mA | 1.7V~3.6V | 2KX8 | 8 | 16384 bit | 1MHz | 4e-7A | 100 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010MMMR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS43QR16256A-083RBLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 96 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-TFBGA | 9mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.2V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B96 | 1.14V | 1.26V | 4Gb 256M x 16 | Volatile | 1.14V~1.26V | 256MX16 | 16 | 4294967296 bit | 1.2GHz | MULTI BANK PAGE BURST | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71124S12YG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | yes | Active | 3 (168 Hours) | 32 | 70°C | 0°C | 5V | 1 | 20.9mm | RoHS Compliant | Lead Free | No | 32 | Parallel | 5.5V | 4.5V | 1 Mb | 10.2mm | 2.2mm | CMOS | 3.683mm | 1 | 160mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 5V | 32 | COMMERCIAL | SRAMs | 5V | 3-STATE | 12 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 17b | Asynchronous | 8b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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LH28F008SAT-85 | Sharp Microelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2003 | Obsolete | 1 (Unlimited) | 40 | 5V | 18.4mm | Non-RoHS Compliant | Contains Lead | No | 40 | DEEP POWER-DOWN | 40-TFSOP (0.724, 18.40mm Width) | 8 Mb | 85GHz | Surface Mount | 0°C~70°C TA | CMOS | 1.19mm | 1 | e0 | TIN LEAD | DUAL | 5V | YES | 0.5mm | 3-STATE | 8Mb 1M x 8 | Non-Volatile | 20b | 4.5V~5.5V | 1MX8 | 8 | 90 ns | 12V | FLASH | Parallel | 85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53D2048M32D8QD-062 WT ES:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 64Gb 2G x 32 | Volatile | 1.1V | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V124SA12TYG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | yes | Active | 3 (168 Hours) | 32 | 70°C | 0°C | 3.3V | 1 | 21.95mm | RoHS Compliant | Lead Free | No | 32 | Parallel | 3.6V | 3V | 1 Mb | 7.6mm | 2.67mm | CMOS | 3.7592mm | 1 | 130mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 3.3V | 32 | COMMERCIAL | SRAMs | 3-STATE | 12 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 17b | Asynchronous | 8b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NAND128W3A2BNXE | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tray | 2012 | yes | Obsolete | 3 (168 Hours) | 3V | ROHS3 Compliant | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 128 Mb | Surface Mount | -40°C~85°C TA | 3.3V | FLASH - NAND | NAND128 | 3.3V | 128Mb 16M x 8 | Non-Volatile | 24b | 2.7V~3.6V | 528B | FLASH | Parallel | 50ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NAND512W3A2SZAXE | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tray | 2012 | Obsolete | 3 (168 Hours) | 63 | 3V | 11mm | ROHS3 Compliant | No | 63 | 63-TFBGA | 512 Mb | Surface Mount | -40°C~85°C TA | 3.3V | FLASH - NAND | 1.05mm | 1 | BOTTOM | 3V | NAND512 | YES | 0.8mm | 3.3V | 512Mb 64M x 8 | Non-Volatile | 26b | 0.02mA | 2.7V~3.6V | 64MX8 | 8 | 0.00005A | 35 ns | NO | NO | YES | 4K | 528B | YES | FLASH | Parallel | 50ns | 16K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MR45V200BRAZAARL | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Tube | Active | 2 (1 Year) | ROHS3 Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 2Mb 256K x 8 | Non-Volatile | 2.7V~3.6V | 34MHz | FRAM | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V659S12BCI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 4 (72 Hours) | Non-RoHS Compliant | 256-LBGA | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70V659 | 256-CABGA (17x17) | 12ns | 4.5Mb 128K x 36 | Volatile | 3.15V~3.45V | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S25FL512SDSBHI210 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2015 | FL-S | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | No | 24 | IT ALSO HAVE MEMORY WIDTH X1 | 24-TBGA | SPI, Serial | 512 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | 3V | YES | 1mm | 2.7V | 3.6V | 512Mb 64M x 8 | Non-Volatile | 32b | 2.7V~3.6V | 64MX8 | 8 | 80MHz | 1 | 3V | 512B | FLASH | SPI - Quad I/O | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S29CL016J0PFFM033 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | CL-J | Obsolete | 3 (168 Hours) | 80 | EAR99 | 13mm | ROHS3 Compliant | 80 | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK | 80-LBGA | 11mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 260 | 3.3V | 40 | YES | 1mm | 3V | Not Qualified | 1.8/3.33.3V | 3.6V | 54ns | 16Mb 512K x 32 | Non-Volatile | 0.09mA | 1.65V~3.6V | 512KX32 | 32 | 16777216 bit | 66MHz | 0.00006A | 3.3V | YES | YES | YES | 1630 | YES | YES | FLASH | Parallel | 60ns | 2K16K | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT24C08C-SSHM-B | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2005 | yes | Active | 3 (168 Hours) | 8 | 5.05mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | No SVHC | 8 kb | 1.5mm | 3.99mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 3mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 40 | AT24C08 | 1.27mm | 1.7V | 5.5V | 550ns | 8Kb 1K x 8 | Non-Volatile | 1.7V~5.5V | 1MHz | 0.000001A | 100 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DMMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT24C512C-SHM-B | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tube | Active | 3 (168 Hours) | 8 | EAR99 | 5.29mm | Non-RoHS Compliant | 8-SOIC (0.209, 5.30mm Width) | 5.24mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 2.16mm | 8542.32.00.51 | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 2.5V | AT24C512C | YES | 1.27mm | R-PDSO-G8 | 1.7V | Not Qualified | 1.8/3.3V | 3.6V | 900ns | 512Kb 64K x 8 | Non-Volatile | 0.003mA | 1.7V~3.6V | 64KX8 | 8 | 524288 bit | SERIAL | 400kHz | 0.000001A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS1258AB-70IND# | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2006 | no | Obsolete | 1 (Unlimited) | 40 | 3A991.B.2.A | ROHS3 Compliant | 40 | 10 YEAR DATA RETENTION | 40-DIP Module (0.610, 15.495mm) | not_compliant | Through Hole | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | DS1258AB | 40 | NO | 2.54mm | 4.75V | SRAMs | Not Qualified | 5V | 5.25V | 2Mb 128K x 16 | Non-Volatile | 0.17mA | 4.75V~5.25V | 128KX16 | 16 | 2097152 bit | 16b | 0.01A | 70 ns | NVSRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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23K256-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 3.3V | 1 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | No SVHC | 256 kb | 1.5mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 10mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3V | 40 | 23K256 | 8 | 2.7V | 3.6V | 3-STATE | 25 ns | 256Kb 32K x 8 | Volatile | 1b | 2.7V~3.6V | Synchronous | 20MHz | 0.000004A | 8b | SEPARATE | 2.7V | SRAM | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V424L12PHGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2008 | yes | Active | 3 (168 Hours) | 44 | 85°C | -40°C | 3.3V | 1 | 18.41mm | RoHS Compliant | Lead Free | No | 44 | TSOP | Parallel | 3.6V | 3V | 4 Mb | 10.16mm | 1mm | CMOS | 1 | 155mA | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 3.3V | 30 | 44 | INDUSTRIAL | 0.8mm | SRAMs | 3-STATE | 12 ns | 512kB | RAM, SDR, SRAM - Asynchronous | 19b | Asynchronous | 8b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS1245ABP-100 | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2006 | Obsolete | 3 (168 Hours) | 34 | EAR99 | 5V | Non-RoHS Compliant | Contains Lead | No | 34 | 34-PowerCap™ Module | 1 Mb | 100GHz | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 85mA | 8542.32.00.41 | 1 | e0 | TIN LEAD | DUAL | 240 | 5V | DS1245AB | 34 | YES | SRAMs | 5V | 1Mb 128K x 8 | Non-Volatile | 4.75V~5.25V | 128KX8 | 8 | 8b | 0.005A | 100 ns | NVSRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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93AA56C/S15K | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | 0°C~70°C TA | EEPROM | 93AA56C | Die | 2Kb 256 x 8 128 x 16 | Non-Volatile | 1.8V~5.5V | 3MHz | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT28BV16-30SC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1998 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 24-SOIC (0.295, 7.50mm Width) | Surface Mount | 0°C~70°C TC | EEPROM | AT28BV16 | 24-SOIC | 300ns | 16Kb 2K x 8 | Non-Volatile | 2.7V~3.6V | EEPROM | Parallel | 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V3558SA133BQG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V3558 | 165-CABGA (13x15) | 4.2ns | 4.5Mb 256K x 18 | Volatile | 3.135V~3.465V | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61VF51236A-6.5B3 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | no | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | 15mm | ROHS3 Compliant | 165 | PIPELINED ARCHITECTURE, FLOW-THROUGH | 165-TBGA | 13mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | NOT SPECIFIED | 2.5V | NOT SPECIFIED | 165 | YES | 1mm | 2.375V | Not Qualified | 2.5V | 2.625V | 3-STATE | 6.5ns | 18Mb 512K x 36 | Volatile | 0.25mA | 2.375V~2.625V | 512KX36 | 36 | 18874368 bit | 133MHz | 0.06A | COMMON | 2.38V | SRAM | Parallel |
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