Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
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IDT71T75802S150PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 150MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 2.5V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 2.375V | SRAMs | Not Qualified | 2.5V | 2.625V | 3-STATE | RAM, SRAM | 0.215mA | 1MX18 | 18 | 18874368 bit | 0.04A | 3.8 ns | COMMON | 2.38V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MX25UM51345GXDR00 | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | MXSMIO™ | Active | 3 (168 Hours) | 24-TBGA | Surface Mount | -40°C~105°C TA | FLASH - NOR | 512Mb 64M x 8 | Non-Volatile | 1.65V~2V | 200MHz | FLASH | SPI - Quad I/O, DTR | 60μs, 750μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT40A512M16HA-083E IT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | 2017 | Obsolete | 3 (168 Hours) | 96 | EAR99 | 1 | 14mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-TFBGA | 9mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.2V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B96 | 1.14V | 1.26V | 8Gb 512M x 16 | Volatile | 1.14V~1.26V | 512MX16 | 16 | 8589934592 bit | 1.2GHz | MULTI BANK PAGE BURST | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53D2G32D8QD-053 WT ES:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Box | Obsolete | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24AA64X-I/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2002 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | Tin | No | 8 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 64 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | 1.1mm | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24AA64 | 8 | 0.65mm | 2/5V | 5.5V | 900ns | 64Kb 8K x 8 | Non-Volatile | 1.8V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S29GL512S11GHI023 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | GL-S | Active | 3 (168 Hours) | 56 | 9mm | ROHS3 Compliant | 56-VFBGA | 7mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | BOTTOM | 3V | YES | 0.8mm | R-PBGA-B56 | 2.7V | 3.6V | 110ns | 512Mb 32M x 16 | Non-Volatile | 2.7V~3.6V | 32MX16 | 16 | 536870912 bit | 3V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71321LA55TFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2008 | yes | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 10mm | RoHS Compliant | Lead Free | No | 64 | AUTOMATIC POWER DOWN | TQFP | Parallel | 5.5V | 4.5V | 16 kb | 10mm | 1.4mm | CMOS | 1.6mm | 1 | 110mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 5V | 30 | 64 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 55 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NM27C010VE120 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | -40°C~85°C TA | EPROM - OTP | NM27C010 | 120ns | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT47H128M8CF-3 AAT:H | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2013 | Obsolete | 3 (168 Hours) | 60 | 1 | 10mm | ROHS3 Compliant | AUTO/SELF REFRESH | 60-TFBGA | 8mm | Surface Mount | -40°C~105°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 1.8V | MT47H128M8 | YES | 0.8mm | R-PBGA-B60 | 1.7V | 1.9V | 450ps | AEC-Q100 | 1Gb 128M x 8 | Volatile | 1.7V~1.9V | 128MX8 | 8 | 1073741824 bit | 333MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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709279S12PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 5.5V | 4.5V | 512 kb | 33.3MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 345mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 12 ns | 64kB | RAM, SDR, SRAM | 15b | Synchronous | 0.015A | 16b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29E512G08CEHBBJ4-3:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Not For New Designs | 3 (168 Hours) | ROHS3 Compliant | 132-VBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | 512Gb 64G x 8 | Non-Volatile | 2.5V~3.6V | 333MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F128G08CBCEBJ4-37ITRES:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 132-VBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 128Gb 16G x 8 | Non-Volatile | 2.7V~3.6V | 267MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F16G08CBACAL72A3WC1 | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 0°C~70°C TA | FLASH - NAND | 16Gb 2G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62147GN30-45B2XI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | MoBL® | Active | 3 (168 Hours) | 48 | 3A991.B.2.A | 8mm | ROHS3 Compliant | 48-VFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1mm | 8542.32.00.41 | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.75mm | R-PBGA-B48 | 2.2V | 3.6V | 4Mb 256K x 16 | Volatile | 2.2V~3.6V | 256KX16 | 16 | 4194304 bit | 45 ns | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL128P90FFSS70 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2015 | GL-P | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 64 | 64-LBGA | Surface Mount | 0°C~85°C TA | FLASH - NOR | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 90ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL064N90FAI013 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | 2016 | GL-N | Active | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | Non-RoHS Compliant | No | 64 | 64-LBGA | 64 Mb | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | e0 | TIN LEAD | BOTTOM | 240 | 3V | 30 | YES | 1mm | 2.7V | 3/3.3V | 3.6V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 0.05mA | 2.7V~3.6V | 4MX16 | 16 | 0.000005A | 90 ns | 8 | 3V | YES | YES | YES | 128 | 8/16words | YES | YES | FLASH | Parallel | 90ns | 64K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71342LA20J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 240mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 20 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M58WR032KB7AZB6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2009 | yes | Obsolete | 3 (168 Hours) | 56 | 3A991.B.1.A | 1.8V | 9mm | ROHS3 Compliant | No | 56 | 56-VFBGA | Parallel, Serial | 32 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1mm | 8542.32.00.51 | 1 | 30mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 30 | M58WR032 | 56 | YES | 0.75mm | 1.7V | 32Mb 2M x 16 | Non-Volatile | 21b | 1.7V~2V | 2MX16 | 16 | Asynchronous | 66MHz | 0.00005A | 70 ns | 16b | NO | NO | 863 | 4words | FLASH | Parallel | 70ns | 4K32K | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT47H32M16CC-37E IT:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2006 | Obsolete | 3 (168 Hours) | 84 | EAR99 | 1 | 12.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 84-TFBGA | 12mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 30 | MT47H32M16 | 84 | YES | 0.8mm | R-PBGA-B84 | 1.7V | Not Qualified | 1.8V | 1.9V | 3-STATE | 500ps | 512Mb 32M x 16 | Volatile | 0.34mA | 1.7V~1.9V | 32MX16 | 16 | 536870912 bit | 267MHz | 0.007A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61QDPB41M18A-400M3L | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 165 | 17mm | ROHS3 Compliant | 165 | 165-LBGA | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QUADP | 1.4mm | 1 | BOTTOM | 1.8V | YES | 1mm | 1.71V | Not Qualified | 1.5/1.81.8V | 1.89V | 3-STATE | 8.4ns | 18Mb 1M x 18 | Volatile | 0.95mA | 1.71V~1.89V | 1MX18 | 18 | 18874368 bit | 400MHz | 0.32A | SEPARATE | 1.7V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7007L55PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 80-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7007 | 80-TQFP (14x14) | 55ns | 256Kb 32K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71024S12TYG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | yes | Active | 3 (168 Hours) | 32 | 70°C | 0°C | 5V | 1 | 21.95mm | RoHS Compliant | Lead Free | No | 32 | Parallel | 5.5V | 4.5V | 1 Mb | 7.6mm | 2.67mm | CMOS | 3.76mm | 1 | 160mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 5V | 32 | COMMERCIAL | SRAMs | 5V | 3-STATE | 12 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 17b | Asynchronous | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W25Q64FWSTIG TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2016 | SpiFlash® | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 64Mb 8M x 8 | Non-Volatile | 1.65V~1.95V | 104MHz | FLASH | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NAND512W3A2DZA6E | Micron Technology Inc. | 3.0968 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | Obsolete | 3 (168 Hours) | 63 | ROHS3 Compliant | No | 63 | 63-TFBGA | 512 Mb | Surface Mount | -40°C~85°C TA | FLASH - NAND | 30mA | BOTTOM | NAND512-A | 0.8mm | 3/3.3V | 512Mb 64M x 8 | Non-Volatile | 26b | 2.7V~3.6V | 64MX8 | 8 | Asynchronous | 0.00005A | 35 ns | 8b | NO | NO | YES | 4K | 512B | YES | FLASH | Parallel | 50ns | 16K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT25DF081A-SSH-B | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tube | 1997 | Active | 1 (Unlimited) | 8 | EAR99 | 3.3V | 5.05mm | ROHS3 Compliant | Lead Free | Gold | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | No SVHC | 8 Mb | 1.5mm | 3.99mm | Surface Mount | 540.001716mg | -40°C~85°C TC | CMOS | 20mA | 1 | 20mA | e4 | DUAL | 260 | 3V | 8 | 1.27mm | 2.7V | 3.6V | 8Mb 256Bytes x 4096 pages | Non-Volatile | 1b | 2.7V~3.6V | Synchronous | 8b | 100MHz | 0.00001A | 8b | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | 256B | SPI | FLASH | SPI | 7μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS1350YL-100 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | no | Obsolete | 1 (Unlimited) | 34 | 24.5745mm | Non-RoHS Compliant | 10 YEAR DATA RETENTION | 34-LPM | 21.5265mm | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 6.35mm | 1 | NOT SPECIFIED | DUAL | 225 | 5V | NOT SPECIFIED | 34 | YES | 1.27mm | R-PDSO-U34 | 4.5V | COMMERCIAL | 5.5V | 4Mb 512K x 8 | Non-Volatile | 4.5V~5.5V | 512KX8 | 8 | 4194304 bit | 100 ns | NVSRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SST25VF040B-50-4I-QAE | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tube | 1998 | SST25 | Active | 1 (Unlimited) | 8 | 3.3V | 6mm | ROHS3 Compliant | No | 8 | 8-WDFN Exposed Pad | SPI, Serial | 4 Mb | 5mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | SST25VF040B | YES | 1.27mm | 2.7V | 3.6V | 4Mb 512K x 8 | Non-Volatile | 2.7V~3.6V | 4MX1 | 1 | 50MHz | 2.7V | FLASH | SPI | 10μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S34ML16G202BHI003 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 63 | 11mm | RoHS Compliant | 9mm | CMOS | ASYNCHRONOUS | 1.2mm | 1 | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | INDUSTRIAL | YES | 0.8mm | R-PBGA-B63 | 2.7V | 85°C | -40°C | 3.6V | 2GX8 | 8 | 17179869184 bit | FLASH | PARALLEL | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V3556S100BQGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | 3 (168 Hours) | 165 | 3A991.B.2.A | 85°C | -40°C | 15mm | RoHS Compliant | 165 | Parallel | 100MHz | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 165 | INDUSTRIAL | YES | 1mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.255mA | 128KX36 | 36 | 4718592 bit | 0.045A | 5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BQ4013MA-120 | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | no | Obsolete | 1 (Unlimited) | 32 | EAR99 | 5V | 42.8mm | ROHS3 Compliant | Contains Lead | No | 32 | 32-DIP Module (0.61, 15.49mm) | 1 Mb | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 9.53mm | 1 | 50mA | DUAL | 5V | BQ4013 | 2.54mm | SRAMs | 5V | 1Mb 128K x 8 | Non-Volatile | 4.75V~5.5V | 128KX8 | 8 | 8b | 0.004A | 120 ns | 8b | NVSRAM | Parallel | 120ns |
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