Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "MTFC8GACAEDQ-AIT TR") |
MTFC8GACAEDQ-AIT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F2G16ABAEAWP:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 3 Weeks | Surface Mount | Bulk | 1998 | Obsolete | 3 (168 Hours) | 48 | 3.3V | 18.4mm | ROHS3 Compliant | Tin | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 2 Gb | Surface Mount | 0°C~70°C TA | FLASH - NAND | 1.2mm | 1 | 35mA | DUAL | 3.3V | MT29F2G16 | 0.5mm | 2.7V | 3.6V | 2Gb 128M x 16 | Non-Volatile | 28b | 2.7V~3.6V | 128MX16 | 16 | Asynchronous | 0.0001A | 25 ns | 16b | 2.7V | NO | NO | YES | 2K | 1Kwords | YES | FLASH | Parallel | 64K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS28E07Q+T | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 6 | 3mm | ROHS3 Compliant | 6-WDFN Exposed Pad | 3mm | Surface Mount | -40°C~85°C TA | CMOS | ASYNCHRONOUS | 0.8mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | DS28E07 | YES | 0.65mm | S-PDSO-N6 | 3V | 5.25V | 2μs | 1Kb 256 x 4 | Non-Volatile | 3V~5.25V | 1KX1 | 1 | 1024 bit | SERIAL | EEPROM | 1-Wire® | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V25761SA200BG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 119 | 3A991.B.2.A | 70°C | 0°C | 22mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | BGA | Parallel | not_compliant | 200MHz | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 119 | COMMERCIAL | YES | 1.27mm | 3.135V | SRAMs | Not Qualified | 2.53.3V | 3.465V | 3-STATE | RAM, SRAM | 0.36mA | 128KX36 | 36 | 4718592 bit | 0.03A | 3.1 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V416L15YGI | Renesas Electronics America Inc. | 53.3175 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 44-BSOJ (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | IDT71V416 | 4Mb 256K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MTFC32GAPALNA-AIT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Tape & Reel (TR) | e•MMC™ | Active | 100-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 256Gb 32G x 8 | Non-Volatile | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9389L12PRF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | no | Active | 3 (168 Hours) | 128 | 70°C | 0°C | 3.3V | 2 | 20mm | RoHS Compliant | Contains Lead | No | 128 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 1.1 Mb | 33.3MHz | 14mm | 1.4mm | CMOS | 1 | 200mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 128 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 12 ns | 83MHz | 128kB | RAM, SDR, SRAM | 16b | 64KX18 | Synchronous | 18b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC64-I/SM | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Surface Mount | Tube | 2002 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-SOIC (0.209, 5.30mm Width) | 2-Wire, I2C, Serial | No SVHC | 64 kb | 1.5mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 40 | 24LC64 | 8 | 1.27mm | 2.5V | 3/5V | 5.5V | 900ns | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24AA02-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | No SVHC | 2 kb | 1.5mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24AA02 | 8 | 1.27mm | 1.7V | 2/5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.7V~5.5V | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010XXXR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14B104L-BA45XI | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFBGA | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 48-FBGA (6x10) | 45ns | 4Mb 512K x 8 | Non-Volatile | 2.7V~3.6V | NVSRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST39VF020-70-4I-WHE-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel (TR) | 2011 | SST39 MPF™ | Active | 3 (168 Hours) | 32 | 12.4mm | ROHS3 Compliant | 32-TFSOP (0.488, 12.40mm Width) | 8mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-G32 | 2.7V | 3.6V | 70ns | 2Mb 256K x 8 | Non-Volatile | 2.7V~3.6V | 256KX8 | 8 | 2097152 bit | 2.7V | FLASH | Parallel | 20μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1514V18-200BZXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2003 | Obsolete | 5 (48 Hours) | 165 | 1.8V | 2 | 17mm | ROHS3 Compliant | 165 | PIPELINED ARCHITECTURE | 165-LBGA | unknown | 72 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 1.4mm | 1 | 900mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 20 | CY7C1514 | 165 | 1mm | 1.7V | Not Qualified | 1.9V | 3-STATE | 450 ps | 72Mb 2M x 36 | Volatile | 21b | 1.7V~1.9V | 36 | Synchronous | 200MHz | 36b | SEPARATE | 1.7V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16160D-6TL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | yes | Obsolete | 2 (1 Year) | 54 | EAR99 | 3.3V | 1 | 22.22mm | RoHS Compliant | No | 54 | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 256 Mb | 1mm | 10.16mm | Surface Mount | 0°C~70°C TA | SDRAM | 180mA | 1 | 180mA | e3 | Tin (Sn) | DUAL | 260 | 3.3V | 10 | 54 | 0.8mm | 3V | 3.6V | 3-STATE | 5.4ns | 256Mb 16M x 16 | Volatile | 15b | 3V~3.6V | 16MX16 | 16b | 166MHz | 0.003A | COMMON | 8192 | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1513KV18-333BZC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 165-FBGA (13x15) | 72Mb 4M x 18 | Volatile | 1.7V~1.9V | 333MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT70T631S12DD | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | 4 (72 Hours) | 144 | 3A991.B.2.A | 70°C | 0°C | 2 | 20mm | Non-RoHS Compliant | TQFP | Parallel | not_compliant | 20mm | CMOS | ASYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 2.5V | 30 | 144 | COMMERCIAL | YES | 0.5mm | S-PQFP-G144 | 2.4V | SRAMs | Not Qualified | 2.52.5/3.3V | 2.6V | 3-STATE | RAM, SRAM | 0.355mA | 256KX18 | 18 | 4718592 bit | 0.01A | 12 ns | COMMON | 2.4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48V4M32LFF5-10 IT:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Box | 2007 | Discontinued | 2 (1 Year) | 90 | EAR99 | 1 | 13mm | Non-RoHS Compliant | AUTO/SELF REFRESH | 90-VFBGA | not_compliant | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPSDR | SYNCHRONOUS | 1mm | 8542.32.00.24 | 1 | e0 | TIN LEAD SILVER | BOTTOM | 235 | 2.5V | 30 | MT48V4M32 | 90 | YES | 0.8mm | R-PBGA-B90 | 2.3V | Not Qualified | 1.8/2.52.5V | 2.7V | 3-STATE | 7ns | 128Mb 4M x 32 | Volatile | 0.12mA | 2.3V~2.7V | 8MX32 | 32 | 268435456 bit | 100MHz | 0.00045A | COMMON | 4096 | DRAM | Parallel | 15ns | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RD48F3000P0ZBQEA | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2010 | Axcell™ | Obsolete | 3 (168 Hours) | 1.8V | Non-RoHS Compliant | No | 88 | 88-TFBGA, CSPBGA | Parallel, Serial | 128 Mb | Surface Mount | -40°C~85°C TC | FLASH - NOR | 48F3000P0 | 128Mb 8M x 16 | Non-Volatile | 23b | 1.7V~2V | 52MHz | FLASH | Parallel | 65ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46V32M4P-6T:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2007 | Obsolete | 3 (168 Hours) | 66 | EAR99 | 1 | 22.22mm | ROHS3 Compliant | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | unknown | 10.16mm | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 8542.32.00.02 | 1 | e3 | MATTE TIN | DUAL | 260 | 2.5V | 30 | MT46V32M4 | 66 | YES | 0.65mm | R-PDSO-G66 | 2.3V | Not Qualified | 2.5V | 2.7V | 3-STATE | 700ps | 128Mb 32M x 4 | Volatile | 0.355mA | 2.3V~2.7V | 32MX4 | 4 | 134217728 bit | 167MHz | 0.003A | COMMON | 4096 | DRAM | Parallel | 15ns | 248 | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C04A-10PC-2.5 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | 0°C~70°C TA | EEPROM | AT24C04 | 8-PDIP | 900ns | 4Kb 512 x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
93LC56A-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Through Hole | Tube | 2003 | yes | Active | Not Applicable | 8 | EAR99 | 9.271mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-DIP (0.300, 7.62mm) | Serial | 2 kb | 7.62mm | Through Hole | -40°C~125°C TA | CMOS | 5.334mm | 1 | 2mA | e3 | DUAL | 5V | 93LC56A | 8 | 2.54mm | 2.5V | 3/5V | 5.5V | 250 ns | 2Kb 256 x 8 | Non-Volatile | 2.5V~5.5V | 8 | 2MHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49BV8192AT-11TI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2001 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TC | AT49BV8192 | 110ns | 8Mb 1M x 8 512K x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 30μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M29W160ET70ZS6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2013 | yes | Obsolete | 3 (168 Hours) | 64 | EAR99 | 13mm | ROHS3 Compliant | No | 64 | TOP BOOT BLOCK | 64-LBGA | 16 Mb | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | M29W160 | 64 | YES | 1mm | 3/3.3V | 2.7V | 16Mb 2M x 8 1M x 16 | Non-Volatile | 0.02mA | 2.7V~3.6V | 1MX16 | 16 | 0.0001A | 70 ns | 8 | YES | YES | YES | 12131 | YES | YES | FLASH | Parallel | 70ns | TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
DS1345BL-100 | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2000 | Obsolete | 1 (Unlimited) | 34 | EAR99 | 24.5745mm | Non-RoHS Compliant | Contains Lead | 34 | 10 YEAR DATA RETENTION | 34-LPM | not_compliant | 100GHz | 21.5265mm | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 6.35mm | 8542.32.00.41 | 1 | e0 | TIN LEAD | DUAL | 5V | DS1345BL | 34 | YES | 1.27mm | 4.75V | SRAMs | Not Qualified | 5V | 5.25V | 1Mb 128K x 8 | Non-Volatile | 0.085mA | 4.75V~5.25V | 128KX8 | 8 | 1048576 bit | 0.00015A | 100 ns | NVSRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75602S150BGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2012 | no | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 2.5V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 2.625V | 2.375V | 18 Mb | 150MHz | 2.15mm | 22mm | 2.15mm | CMOS | 235mA | 1 | 235mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 119 | INDUSTRIAL | SRAMs | 3-STATE | 3.8 ns | 150MHz | 2.3MB | RAM, SDR, SRAM | 19b | Synchronous | 0.06A | 36b | COMMON | 2.38V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V06L20J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 3.3V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | PLCC | Parallel | 3.6V | 3V | 128 kb | 24mm | 3.63mm | CMOS | 4.57mm | 1 | 175mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 68 | COMMERCIAL | SRAMs | 3-STATE | 20 ns | 16kB | RAM, SDR, SRAM | 28b | 16KX8 | Asynchronous | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V2556SA166BG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2011 | no | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 3.3V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 166MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 350mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 119 | COMMERCIAL | SRAMs | 3-STATE | 3.5 ns | RAM, SRAM | 17b | Synchronous | 0.04A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
N25Q00AA11G1240E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Bulk | 2014 | yes | Obsolete | 3 (168 Hours) | 24 | 1.8V | 8mm | ROHS3 Compliant | Copper, Silver, Tin | 24 | 24-LBGA | SPI, Serial | 1 Gb | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1.3mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | 1mm | 1.7V | 9 ns | 1Gb 256M x 4 | Non-Volatile | 1.7V~2V | 1GX1 | 1 | 108MHz | FLASH | SPI | 8ms, 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1225AD-200+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tube | 2004 | yes | Active | 1 (Unlimited) | 28 | EAR99 | ROHS3 Compliant | Lead Free | 28 | 10 YEAR DATA RETENTION | 28-DIP Module (0.600, 15.24mm) | not_compliant | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8473.30.11.40 | 1 | e3 | MATTE TIN | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | DS1225A | 28 | NO | 2.54mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 64Kb 8K x 8 | Non-Volatile | 0.075mA | 4.5V~5.5V | 8KX8 | 8 | 65536 bit | 0.01A | 200 ns | NVSRAM | Parallel | 200ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25XE041B-XMHN-T | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Cut Tape (CT) | 2013 | yes | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | Lead Free | 8 | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 32 Mb | 3mm | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | 1.2mm | 1 | DUAL | 1.8V | 0.65mm | 1.65V | 3.6V | 7.5 ns | 4Mb 512K x 8 | Non-Volatile | 1.65V~3.6V | 4MX1 | 1 | 85MHz | 256B | FLASH | SPI | 8μs, 2.75ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70P3519S166BCGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 4 (72 Hours) | 256-LBGA | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Synchronous | IDT70P3519 | 3.6ns | 9Mb 256K x 36 | Volatile | 1.7V~1.9V | 166MHz | SRAM | Parallel |
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