Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "IS61NVF51236-6.5B3") |
IS61NVF51236-6.5B3 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | no | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | 15mm | ROHS3 Compliant | 165 | FLOW-THROUGH ARCHITECTURE | 165-TBGA | 13mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | NOT SPECIFIED | 2.5V | NOT SPECIFIED | 165 | YES | 1mm | 2.375V | Not Qualified | 2.5V | 2.625V | 3-STATE | 6.5ns | 18Mb 512K x 36 | Volatile | 0.45mA | 2.375V~2.625V | 512KX36 | 36 | 18874368 bit | 133MHz | 0.06A | COMMON | 2.38V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS62WV102416DBLL-55TLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 48 | 18.4mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-G48 | 2.2V | 3.6V | 16Mb 1M x 16 | Volatile | 2.2V~3.6V | 1MX16 | 16 | 16777216 bit | 55 ns | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61C5128AS-25TLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | Active | 2 (1 Year) | 85°C | -40°C | 5V | 1 | ROHS3 Compliant | No | 32 | 32-SOIC (0.400, 10.16mm Width) | Parallel | 5.5V | 4.5V | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 15mA | 32-TSOP II | 25ns | 4Mb 512K x 8 | Volatile | 19b | 4.5V~5.5V | Asynchronous | 8b | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43R86400D-5TL | ISSI, Integrated Silicon Solution Inc | 5.7840 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tray | yes | Active | 3 (168 Hours) | 66 | EAR99 | 1 | 22.22mm | ROHS3 Compliant | 66 | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | 512 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | 430mA | e3 | MATTE TIN | DUAL | 260 | 2.6V | 40 | 66 | 0.65mm | 2.5V | Not Qualified | 2.6V | 2.7V | 3-STATE | 700ps | 512Mb 64M x 8 | Volatile | 15b | 2.5V~2.7V | 64MX8 | 8 | 8b | 200MHz | 0.025A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS61NLP51236-250B3I | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | no | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | 15mm | ROHS3 Compliant | PIPELINED ARCHITECTURE | 165-TBGA | 13mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 165 | YES | 1mm | R-PBGA-B165 | 3.135V | Not Qualified | 2.5/3.33.3V | 3.465V | 3-STATE | 2.6ns | 18Mb 512K x 36 | Volatile | 0.5mA | 3.135V~3.465V | 512KX36 | 36 | 18874368 bit | 250MHz | 0.075A | COMMON | 3.14V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43LD32640B-25BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 134 | 1 | 11.5mm | ROHS3 Compliant | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 134-TFBGA | 10mm | Surface Mount | -40°C~85°C TC | SDRAM - Mobile LPDDR2-S4 | SYNCHRONOUS | 1.1mm | 1 | BOTTOM | NOT SPECIFIED | 1.2V | NOT SPECIFIED | YES | 0.65mm | R-PBGA-B134 | 1.14V | 1.3V | 2Gb 64M x 32 | Volatile | 1.14V~1.95V | 64MX32 | 32 | 2147483648 bit | 400MHz | MULTI BANK PAGE BURST | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS43LD16640A-3BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | yes | Discontinued | 3 (168 Hours) | 134 | 1 | 11.5mm | ROHS3 Compliant | 134 | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 134-TFBGA | 1 Gb | Surface Mount | 0°C~85°C TA | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 1.1mm | 1 | BOTTOM | NOT SPECIFIED | 1.2V | NOT SPECIFIED | YES | 0.65mm | 1.14V | 1.3V | 1Gb 64M x 16 | Volatile | 13b | 1.14V~1.95V | 64MX16 | 16 | 333MHz | MULTI BANK PAGE BURST | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AT28C256F-15LM/883-815 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 23 Weeks | Tube | Active | 3 (168 Hours) | 32 | 13.97mm | ROHS3 Compliant | AUTOMATIC WRITE | 32-CLCC | 11.43mm | Surface Mount | -55°C~125°C TC | CMOS | ASYNCHRONOUS | 2.54mm | 1 | QUAD | 5V | YES | 1.27mm | R-CQCC-N32 | 4.5V | 5.5V | 150ns | MIL-STD-883 Class C | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 32KX8 | 8 | 262144 bit | 3ms | 5V | EEPROM | Parallel | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1470V25-200BZIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel (TR) | 2004 | NoBL™ | no | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | 2.5V | 4 | 17mm | Non-RoHS Compliant | Contains Lead | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 72 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1 | e0 | TIN LEAD | BOTTOM | 220 | 2.5V | CY7C1470 | YES | 1mm | 2.375V | 2.625V | 3-STATE | 3ns | 72Mb 2M x 36 | Volatile | 21b | 2.375V~2.625V | 2MX36 | 36 | 200MHz | COMMON | 2.38V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53B4DBEZ-DC TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | SDRAM - Mobile LPDDR4 | Volatile | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M24C01-WMN6T | STMicroelectronics | 0.1909 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | no | Obsolete | 1 (Unlimited) | 8 | EAR99 | 6.5V | 4.9mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | 1 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | e0 | DUAL | 5V | M24C01 | 8 | YES | 1.27mm | 2.5V | 3/5V | 5.5V | OPEN-DRAIN | 900ns | 1Kb 128 x 8 | Non-Volatile | 0.002mA | 2.5V~5.5V | 8 | 400kHz | 0.000001A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25020B-MAHL-E | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 1997 | Active | 3 (168 Hours) | 8 | EAR99 | 3mm | Non-RoHS Compliant | ALSO OPERATES AT MIN 1.8 V AT 5 MHZ | 8-UFDFN Exposed Pad | 2mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.6mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-N8 | 4.5V | 5.5V | 2Kb 256 x 8 | Non-Volatile | 1.8V~5.5V | 256X8 | 8 | 2048 bit | SERIAL | 20MHz | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24G02FVJ-3AGTE2 | ROHM Semiconductor | 0.2482 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | Tin | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 2-Wire, I2C, Serial | 2 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | DUAL | NOT SPECIFIED | 2.5V | NOT SPECIFIED | BR24G02 | 0.65mm | S-PDSO-G8 | 1.7V | 5.5V | 450 ns | 2Kb 256 x 8 | Non-Volatile | 1.6V~5.5V | 256X8 | 8 | 1MHz | 5ms | I2C | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25640N-10SC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | 0°C~70°C TA | EEPROM | AT25640 | 8-SOIC | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 3MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24FC512-I/ST14 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2010 | yes | Active | 1 (Unlimited) | 14 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 14 | 14-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 512 kb | 900μm | 4.4mm | Surface Mount | -40°C~85°C TA | CMOS | 8542.32.00.51 | 1 | 5mA | e3 | DUAL | 260 | 2.5V | 40 | 24FC512 | 14 | 1.7V | 2/5V | 5.5V | 400ns | 512Kb 64K x 8 | Non-Volatile | 1.7V~5.5V | 64KX8 | 1MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S79FL256SDSMFBG00 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Automotive, AEC-Q100, FL-S | Active | 3 (168 Hours) | 16 | 10.3mm | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | 7.5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G16 | 2.7V | 3.6V | AEC-Q100; TS 16949 | 512Mb 64M x 8 | Non-Volatile | 2.7V~3.6V | 32MX8 | 8 | 268435456 bit | SERIAL | 80MHz | 1 | 3V | FLASH | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62167EV30LL-45ZXA | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tray | 2001 | MoBL® | yes | Active | 3 (168 Hours) | 48 | 3V | 1 | 12mm | ROHS3 Compliant | Lead Free | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 16 Mb | 1.05mm | 18.4mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 30mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3V | 30 | CY62167 | 48 | 0.5mm | 2.2V | 3.6V | 3-STATE | 16Mb 2M x 8 1M x 16 | Volatile | 20b | 2.2V~3.6V | Asynchronous | 45 ns | COMMON | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CP7457AT | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61LV12816L-10TLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | yes | Active | 3 (168 Hours) | 44 | 3.3V | 1 | 18.52mm | ROHS3 Compliant | Lead Free | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 2 Mb | 1.05mm | 10.29mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 65mA | e3 | Matte Tin (Sn) - annealed | DUAL | 3.3V | 44 | 0.8mm | 2.97V | 3.63V | 3-STATE | 2Mb 128K x 16 | Volatile | 17b | 3.135V~3.6V | Asynchronous | 0.004A | 16b | COMMON | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V67803S133PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 133MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.26mA | 512KX18 | 18 | 9437184 bit | 0.05A | 4.2 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT45DB021B-SI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TC | FLASH | AT45DB021 | 8-SOIC | 2Mb 264Bytes x 1024 pages | Non-Volatile | 2.7V~3.6V | 20MHz | FLASH | SPI | 14ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FM93C66N | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | 0°C~70°C TA | FM93C66 | 4Kb 256 x 16 | Non-Volatile | 4.5V~5.5V | 1MHz | EEPROM | SPI | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321L25TF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT71V321 | 64-TQFP (10x10) | 25ns | 16Kb 2K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL256S10FHI020 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tray | 2015 | GL-S | Active | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | No | 64 | 64-LBGA | 256 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 40 | YES | 1mm | 2.7V | 3/3.3V | 3.6V | 100ns | 256Mb 16M x 16 | Non-Volatile | 24b | 0.08mA | 2.7V~3.6V | 16MX16 | 16 | 0.0001A | 2.7V | YES | YES | YES | 256 | 32B | YES | YES | FLASH | Parallel | 60ns | 64K | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C199CN-25PXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2003 | Obsolete | 1 (Unlimited) | 28 | EAR99 | 34.67mm | ROHS3 Compliant | Lead Free | 28-DIP (0.300, 7.62mm) | unknown | 25GHz | 7.62mm | Through Hole | 0°C~70°C TA | SRAM - Asynchronous | 4.82mm | 8542.32.00.41 | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | CY7C199 | 28 | NO | 2.54mm | R-PDIP-T28 | 4.5V | Not Qualified | 5V | 5.5V | 3-STATE | 256Kb 32K x 8 | Volatile | 0.075mA | 4.5V~5.5V | 32KX8 | 8 | 262144 bit | 0.0005A | 25 ns | COMMON | 4.5V | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
709269L15PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2009 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 5.5V | 4.5V | 256 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | YES | 0.5mm | SRAMs | 5V | 3-STATE | 15 ns | 32kB | RAM, SDR, SRAM | 28b | 16KX16 | 40MHz | 0.005A | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48LC64M4A2TG-6A:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Box | 2007 | Discontinued | 2 (1 Year) | 70°C | 0°C | 3.3V | Non-RoHS Compliant | Contains Lead | 54-TSOP (0.400, 10.16mm Width) | Parallel | 167MHz | Surface Mount | 0°C~70°C TA | SDRAM | MT48LC64M4A2 | 54-TSOP II | 5.4ns | 256Mb 64M x 4 | Volatile | 3V~3.6V | 167MHz | DRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC128-E/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | yes | Active | 3 (168 Hours) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | 1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS | 8-SOIC (0.154, 3.90mm Width) | I2C, Serial | 128 kb | 1.5mm | 3.9mm | Surface Mount | -40°C~125°C TA | CMOS | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 260 | 4.5V | 40 | 24LC128 | 8 | 1.27mm | 2.5V | 3/5V | 5.5V | 900ns | 128Kb 16K x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT70825S25G | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 84-BPGA | Through Hole | 0°C~70°C TA | SARAM | IDT70825 | 128Kb 8K x 16 | Volatile | 4.5V~5.5V | RAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V546XS133PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V546 | 4.2ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 133MHz | SRAM | Parallel |
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