Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Page Size | Serial Bus Type | I2C Control Byte | Reverse Pinout | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDT71V3579YS65PFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2006 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | unknown | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.3mA | 256KX18 | 18 | 4718592 bit | 133MHz | 0.03A | 6.5 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS45S16160J-6CTLA1 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tube | Active | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | 54 | 54-TSOP (0.400, 10.16mm Width) | Parallel | 166MHz | Surface Mount | -40°C~85°C TA | SDRAM | 54-TSOP II | 5.4ns | 256Mb 16M x 16 | Volatile | 3V~3.6V | 166MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71T75602S133BGG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2012 | yes | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 2.5V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 2.625V | 2.375V | 18 Mb | 133MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 195mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 2.5V | 30 | 119 | COMMERCIAL | SRAMs | 3-STATE | 4.2 ns | 133MHz | 2.3MB | RAM, SDR, SRAM | 19b | Synchronous | 0.04A | 36b | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS62WVS5128FALL-16NLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 4Mb 512K x 8 | Volatile | 1.65V~2.2V | 16MHz | SRAM | SPI - Quad I/O | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT46H32M32LFB5-6 IT:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2014 | Obsolete | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 90-VFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | 8542.32.00.32 | MT46H32M32 | 90 | 5ns | 1Gb 32M x 32 | Volatile | 1.7V~1.95V | 166MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S34MS08G201BHI000 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | 2008 | MS-2 | Discontinued | 3 (168 Hours) | 63 | 11mm | ROHS3 Compliant | Lead Free | 63 | 63-VFBGA | 9mm | Surface Mount | -40°C~85°C TA | FLASH - NAND | ASYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | 1.7V | 1.95V | 8Gb 1G x 8 | Non-Volatile | 1.7V~1.95V | 1GX8 | 8 | 8589934592 bit | 1.8V | FLASH | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29AS016J70BHI043 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tape & Reel (TR) | AS-J | Active | 3 (168 Hours) | 48 | 8.15mm | ROHS3 Compliant | 48-VFBGA | 6.15mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B48 | 1.65V | 1.95V | 16Mb 2M x 8 1M x 16 | Non-Volatile | 1.65V~1.95V | 1MX16 | 16 | 16777216 bit | 70 ns | 8 | 1.8V | FLASH | Parallel | 70ns | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70T651S10DR | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 2.5V | 2 | 28mm | RoHS Compliant | Contains Lead | No | 208 | PQFP | Parallel | 2.6V | 2.4V | 9 Mb | 28mm | 3.5mm | CMOS | 4.1mm | 1 | 405mA | e0 | Tin/Lead (Sn/Pb) | QUAD | GULL WING | 225 | 2.5V | 20 | 208 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 10 ns | 1.1MB | RAM, SDR, SRAM | 18b | Asynchronous | 0.01A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24LCS52-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2003 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 1000K ERASE/WRITE CYCLES; HARDWARE WRITE PROTECT; DATA RETENTION > 200 YEARS | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | No SVHC | 2 kb | 1.5mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 3mA | e3 | DUAL | 260 | 5V | 40 | 24LCS52 | 8 | 1.27mm | 2.2V | 2.5/5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 2.2V~5.5V | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
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M28W160FST70ZA6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2016 | Obsolete | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | Parallel | Surface Mount | -40°C~85°C TA | FLASH - NOR | M28W160 | 70ns | 16Mb 1M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT41K256M16LY-093:N TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 96-TFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | 20ns | 4Gb 256M x 16 | Volatile | 1.283V~1.45V | 1067MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT71P79804S267BQ | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II | IDT71P79 | 165-CABGA (13x15) | 6.3ns | 18Mb 1M x 18 | Volatile | 1.7V~1.9V | 267MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT28BV16-25JI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1998 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | -40°C~85°C TC | EEPROM | AT28BV16 | 32-PLCC (13.97x11.43) | 250ns | 16Kb 2K x 8 | Non-Volatile | 2.7V~3.6V | EEPROM | Parallel | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS66WV51216DBLL-55TLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Discontinued | 3 (168 Hours) | 44 | 3.3V | 1 | ROHS3 Compliant | Lead Free | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 8 Mb | Surface Mount | -40°C~85°C TA | PSRAM (Pseudo SRAM) | 10mA | 1 | 18MHz | DUAL | 3V | 44 | YES | 0.8mm | 2.5V | Other Memory ICs | 3.6V | 3-STATE | 8Mb 512K x 16 | Volatile | 19b | 2.5V~3.6V | 16 | 55 ns | COMMON | PSRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V3577S75BGGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 119-BGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V3577 | 119-PBGA (14x22) | 7.5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 117MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT28C256E-20LM/883 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 23 Weeks | Surface Mount | Tube | 1997 | no | Active | 3 (168 Hours) | 32 | 5V | 13.97mm | Non-RoHS Compliant | Contains Lead | Lead, Tin | 32 | AUTOMATIC WRITE | 32-CLCC | Parallel, SPI | 256 kb | 200GHz | 11.43mm | Surface Mount | -55°C~125°C TC | CMOS | ASYNCHRONOUS | 2.54mm | 1 | 50mA | e0 | TIN LEAD | QUAD | 225 | 5V | 30 | AT28C256 | 1.27mm | Not Qualified | 5V | 3-STATE | 200ns | MIL-STD-883 Class C | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 8 | 0.0003A | 100000 Write/Erase Cycles | 10ms | 5V | YES | YES | 64words | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||
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24AA256T-E/MF | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 6mm | ROHS3 Compliant | 8 | 8-VDFN Exposed Pad | I2C, Serial | 256 kb | 5mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1mm | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 260 | 40 | 24AA256 | 8 | 1.27mm | 1.7V | Not Qualified | 5.5V | 900ns | 256Kb 32K x 8 | Non-Volatile | 1.7V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | NO | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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MTFC64GAPALHT-AAT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT34C02B-10TU-1.7 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | 8-TSSOP | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.7V~3.6V | 400kHz | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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5962-8855204XA | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | 2011 | Active | 125°C | -55°C | 5V | 1 | 37.2mm | RoHS Compliant | Contains Lead | No | 28 | CDIP | Parallel | 5.5V | 4.5V | 256 kb | 15.24mm | 1.65mm | 115mA | 45 ns | 32kB | RAM, SDR, SRAM - Asynchronous | 15b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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EDBA232B2PB-1D-F-D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 168 | 1 | 12mm | ROHS3 Compliant | Copper, Silver, Tin | 168 | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY | 168-VFBGA | 16 Gb | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 1mm | 1 | 533MHz | BOTTOM | NOT SPECIFIED | 1.2V | NOT SPECIFIED | 0.5mm | 1.14V | 1.3V | 5.5 ns | 16Gb 512M x 32 | Volatile | 10b | 1.14V~1.95V | 512MX32 | 32 | 32b | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT45DB081E-SSHN-B | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tube | 2011 | Active | 1 (Unlimited) | 8 | 5.05mm | ROHS3 Compliant | Lead Free | Gold | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | Unknown | 8 Mb | 1.5mm | 3.99mm | Surface Mount | 540.001716mg | -40°C~85°C TC | CMOS | 15mA | 1 | 15mA | e4 | DUAL | 260 | 3V | NOT SPECIFIED | 1.27mm | 1.7V | Not Qualified | 3.6V | 7 ns | 8Mb 264Bytes x 4096 pages | Non-Volatile | 21b | 1.7V~3.6V | Synchronous | 8b | 85MHz | 0.000001A | 8b | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI | 8μs, 4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CYDC256B16-55AXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2005 | Obsolete | 3 (168 Hours) | 100 | EAR99 | 1.8V | 2 | 14mm | ROHS3 Compliant | Lead Free | 100 | ALSO OPERATES AT 2.5V AND 3V SUPPLY | 100-LQFP | unknown | 256 kb | 14mm | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, MoBL | ASYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) | QUAD | 260 | 1.8V | 20 | CYDC | 100 | YES | 0.5mm | 1.7V | Not Qualified | 1.8/3V | 1.9V | 3-STATE | 256Kb 16K x 16 | Volatile | 0.025mA | 1.7V~1.9V 2.4V~2.6V 3V~3.6V | 16KX16 | 16 | 0.000006A | 55 ns | COMMON | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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SM671PED-AD | Silicon Motion, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25FL132K0XMFA013 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | 2013 | Automotive, AEC-Q100, FL1-K | Obsolete | 3 (168 Hours) | 8 | 5.28mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | 5.28mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | S-PDSO-G8 | 2.7V | 3.6V | 32Mb 4M x 8 | Non-Volatile | 0.025mA | 2.7V~3.6V | 4MX8 | 8 | 33554432 bit | 108MHz | 0.000008A | 1 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | SPI | FLASH | SPI - Quad I/O | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS43DR86400D-3DBLI | ISSI, Integrated Silicon Solution Inc | 7.7787 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 60 | EAR99 | 1.8V | 1 | 10.5mm | ROHS3 Compliant | 60 | PROGRAMMABLE CAS LATENCY | 60-TFBGA | 512 Mb | Surface Mount | -40°C~85°C TA | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | e1 | TIN SILVER COPPER | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | 1.7V | Not Qualified | 1.9V | 3-STATE | 450ps | 512Mb 64M x 8 | Volatile | 14b | 0.23mA | 1.7V~1.9V | 64MX8 | 8 | 333MHz | 0.025A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT6116SA25SO | Renesas Electronics America Inc. | 2.5247 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 24-SOIC (0.295, 7.50mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT6116 | 24-SOIC | 25ns | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24LC64-E/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tube | 2010 | yes | Active | 2 (1 Year) | 8 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | I2C, Serial | 64 kb | 950μm | 3mm | Surface Mount | -40°C~125°C TA | CMOS | 1 | 3mA | e3 | DUAL | 260 | 5V | 40 | 24LC64 | 8 | YES | 0.65mm | 2.5V | 3/5V | 5.5V | 900ns | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V416VS12BE | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 48-TFBGA | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V416 | 4Mb 256K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FT24C256A-USG-B | Fremont Micro Devices Ltd | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tube | 2010 | yes | Discontinued | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | ALSO OPERATES AT 400KHZ AT 1.8V MIN SUPPLY | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | unknown | 3.9mm | Surface Mount | -40°C~85°C | CMOS | SYNCHRONOUS | 1.75mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 2.5V | 5V | 550ns | 256Kb 32K x 8 | Non-Volatile | 1.8V~5.5V | 256KX8 | 8 | 2097152 bit | 1MHz | 5ms | I2C | EEPROM | I2C | 5ms |
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IDT71V3579YS65PFG Integrated Device Technology (IDT)
3.3V V 100 Pin Memory IC 20mm mm
Price: 0.0000
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71T75602S133BGG8 Integrated Device Technology (IDT)
Surface Mount 119 Pin Memory IC 18 Mb kb 14mm mm 195mA mA 36b b
Price: 0.0000
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70T651S10DR Integrated Device Technology (IDT)
Surface Mount 208 Pin Memory IC 9 Mb kb 28mm mm 405mA mA 36b b
Price: 0.0000
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24LCS52-I/SN Microchip Technology
2.5/5V V Surface Mount 8 Pin Memory IC 24LCS52 2 kb kb 4.9mm mm 3mA mA
Price: 0.0000
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IS66WV51216DBLL-55TLI ISSI, Integrated Silicon Solution Inc
44 Pin Memory IC 8 Mb kb
Price: 0.0000
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AT28C256E-20LM/883 Microchip Technology
5V V Surface Mount Memory IC AT28C256 256 kb kb 13.97mm mm 50mA mA
Price: 0.0000
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24AA256T-E/MF Microchip Technology
Surface Mount 8 Pin Memory IC 24AA256 256 kb kb 6mm mm 3mA mA
Price: 0.0000
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5962-8855204XA Integrated Device Technology (IDT)
Through Hole Memory IC 256 kb kb 37.2mm mm 115mA mA 8b b
Price: 0.0000
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EDBA232B2PB-1D-F-D Micron Technology Inc.
Surface Mount Memory IC 16 Gb kb 12mm mm
Price: 0.0000
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AT45DB081E-SSHN-B Adesto Technologies
Surface Mount Memory IC 8 Mb kb 5.05mm mm 15mA mA 8b b
Price: 0.0000
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CYDC256B16-55AXI Cypress Semiconductor Corp
1.8/3V V 100 Pin Memory IC CYDC 256 kb kb 14mm mm
Price: 0.0000
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S25FL132K0XMFA013 Cypress Semiconductor Corp
Automotive, AEC-Q100, FL1-K Memory IC Automotive, AEC-Q100, FL1-K Series 5.28mm mm
Price: 0.0000
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IS43DR86400D-3DBLI ISSI, Integrated Silicon Solution Inc
Memory IC 512 Mb kb 10.5mm mm
Price: 7.7787
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24LC64-E/MS Microchip Technology
3/5V V 8 Pin Memory IC 24LC64 64 kb kb 3mm mm 3mA mA
Price: 0.0000
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