Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BR93C76-WMN6TP | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.9mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Serial | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.75mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | BR93C76 | 8 | YES | 1.27mm | R-PDSO-G8 | Not Qualified | 8Kb 1K x 8 | Non-Volatile | 0.002mA | 2.5V~5.5V | 1KX8 | 8 | 8192 bit | 2MHz | 0.000005A | 40 | 1000000 Write/Erase Cycles | SOFTWARE | 5ms | MICROWIRE | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70T659S15DR | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2005 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 2.5V | 2 | 28mm | RoHS Compliant | Contains Lead | No | 208 | PQFP | Parallel | 2.6V | 2.4V | 4.5 Mb | 28mm | 3.5mm | CMOS | 4.1mm | 1 | 305mA | e0 | Tin/Lead (Sn/Pb) | QUAD | GULL WING | 225 | 2.5V | 20 | 208 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 15 ns | 512kB | RAM, SDR, SRAM | 34b | Asynchronous | 0.01A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V9269S12PRF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 128 | EAR99 | 70°C | 0°C | 3.3V | 2 | 20mm | RoHS Compliant | Contains Lead | No | 128 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 256 kb | 33.3MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 240mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 128 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 12 ns | 32kB | RAM, SDR, SRAM | 28b | 16KX16 | Synchronous | 0.005A | 16b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL256LAGBHM030 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Tray | 2016 | Automotive, AEC-Q100, FL-L | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | IT ALSO HAVE MEMORY WIDTH X 1 | 24-TBGA | 6mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 2.7V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 2.7V~3.6V | 64MX4 | 4 | 268435456 bit | SERIAL | 133MHz | 2 | 3V | FLASH | SPI - Quad I/O, QPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "M29W640GL70ZF3E") |
M29W640GL70ZF3E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2015 | yes | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | No | 64 | TOP BOOT BLOCK | 64-TBGA | 64 Mb | 10mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 10mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | M29W640 | 64 | YES | 1mm | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 2.7V~3.6V | 4MX16 | 16 | Asynchronous | 0.0001A | 70 ns | 8 | YES | YES | YES | 128 | 4/8words | YES | YES | FLASH | Parallel | 70ns | 64K | |||||||||||||||||||||||||||||||||||||||||||||||
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S29GL032N90FFI010 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tray | 2003 | GL-N | Active | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | Copper, Silver, Tin | No | 64 | 64-LBGA | No SVHC | 32 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | 50mA | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 260 | 3V | 40 | 1mm | 2.7V | 3/3.3V | 3.6V | 32Mb 4M x 8 2M x 16 | Non-Volatile | 2.7V~3.6V | 2MX16 | 16 | Asynchronous | 16b | 0.000005A | 90 ns | 8 | 3V | YES | YES | YES | 64 | 8/16words | YES | YES | FLASH | Parallel | 90ns | 64K | BOTTOM/TOP | |||||||||||||||||||||||||||||||||||||||||||||
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7024S70FB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | 2013 | no | Active | 1 (Unlimited) | 84 | 125°C | -55°C | 5V | 2 | 29.2mm | RoHS Compliant | Contains Lead | No | 84 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | Parallel | 64 kb | 29.21mm | 2.54mm | CMOS | 3.556mm | 1 | e0 | Tin/Lead (Sn/Pb) | QUAD | FLAT | 240 | 5V | 84 | MILITARY | YES | SRAMs | 5V | 3-STATE | 38535Q/M;38534H;883B | RAM, SRAM | 24b | 0.3mA | 4KX16 | 0.03A | 70 ns | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MTFC4GLYAM-WT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2013 | e•MMC™ | Obsolete | 3 (168 Hours) | 85°C | -25°C | ROHS3 Compliant | MMC | Surface Mount | -25°C~85°C TA | FLASH - NAND | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
6116SA20TDB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Through Hole | Bulk | 2013 | no | Active | 1 (Unlimited) | 24 | 125°C | -55°C | 5V | 1 | 32.51mm | RoHS Compliant | Contains Lead | No | 24 | CDIP | Parallel | 5.5V | 4.5V | 16 kb | 7.62mm | 3.56mm | CMOS | 5.08mm | 1 | 130mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 240 | 5V | 24 | MILITARY | 2.54mm | SRAMs | 5V | 3-STATE | 20 ns | MIL-STD-883 Class B | 2kB | RAM, SDR, SRAM - Asynchronous | 11b | 2KX8 | Asynchronous | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71T75702S80PFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2005 | 3 (168 Hours) | 100 | 3A991.B.2.A | 85°C | -40°C | 20mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 2.5V | 20 | 100 | INDUSTRIAL | YES | 0.65mm | R-PQFP-G100 | 2.375V | SRAMs | Not Qualified | 2.5V | 2.625V | 3-STATE | RAM, SRAM | 0.27mA | 512KX36 | 36 | 18874368 bit | 95MHz | 0.06A | 8 ns | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
M29F200BB70M6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tube | 2007 | Obsolete | 3 (168 Hours) | 85°C | -40°C | 5V | ROHS3 Compliant | 44 | 44-SOIC (0.496, 12.60mm Width) | Parallel | 5.5V | 4.5V | 2 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 20mA | M29F200 | 44-SO | 70ns | 2Mb 256K x 8 128K x 16 | Non-Volatile | 17b | 4.5V~5.5V | Asynchronous | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V07L35G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | 2009 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 3.3V | 2 | 29.46mm | RoHS Compliant | Contains Lead | No | 68 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | Parallel | 3.6V | 3V | 256 kb | 29.46mm | 3.68mm | CMOS | 1 | 120mA | e0 | Tin/Lead (Sn/Pb) | PERPENDICULAR | PIN/PEG | 240 | 3.3V | 68 | COMMERCIAL | SRAMs | 3-STATE | 35 ns | RAM, SRAM | 30b | Asynchronous | 0.003A | 8b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7007S25J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 256 kb | 24mm | 3.63mm | CMOS | 1 | 305mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 32kB | RAM, SDR, SRAM | 30b | Asynchronous | 0.015A | 8b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V9279L7PRFGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel | 2008 | yes | Active | 3 (168 Hours) | 128 | 85°C | -40°C | 3.3V | 2 | 20mm | RoHS Compliant | Lead Free | No | 128 | LQFP | Parallel | 512 kb | 14mm | 1.4mm | CMOS | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 128 | INDUSTRIAL | YES | 0.5mm | SRAMs | 3-STATE | RAM, SRAM | 15b | 0.335mA | 83MHz | 0.015A | 7.5 ns | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9199L7PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | no | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 1.1 Mb | 45.45MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 250mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 18 ns | 128kB | RAM, SDR, SRAM | 34b | Synchronous | 9b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V65603S133PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | 133MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.3mA | 256KX36 | 36 | 9437184 bit | 0.04A | 4.2 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STK14C88-NF45TR | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | Obsolete | 3 (168 Hours) | 32 | EAR99 | 20.726mm | Non-RoHS Compliant | 32 | 32-SOIC (0.295, 7.50mm Width) | unknown | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 2.54mm | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 20 | STK14C88 | 32 | YES | 1.27mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 256Kb 32K x 8 | Non-Volatile | 0.07mA | 4.5V~5.5V | 8 | 262144 bit | 8b | 0.0015A | 45 ns | NVSRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V25761S200PFGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V25761 | 100-TQFP (14x14) | 3.1ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V016SA20BF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | Non-RoHS Compliant | 48-LFBGA | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V016 | 1Mb 64K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W29GL128PH9T TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 128Mb 16M x 8 8M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 90ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BQ4010YMA-85 | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | no | Obsolete | 1 (Unlimited) | 28 | EAR99 | 5V | 37.72mm | ROHS3 Compliant | Contains Lead | Tin | No | 28 | 28-DIP Module (0.61, 15.49mm) | 64 kb | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 50mA | 9.53mm | 8542.32.00.41 | 1 | 50mA | DUAL | 5V | BQ4010 | 2.54mm | SRAMs | 5V | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8KX8 | 8 | 8b | 0.004A | 85 ns | 8b | NVSRAM | Parallel | 85ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BQ4010YMA-200 | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | no | Obsolete | 1 (Unlimited) | 28 | EAR99 | 5V | 37.72mm | ROHS3 Compliant | Contains Lead | Tin | No | 28 | 28-DIP Module (0.61, 15.49mm) | 64 kb | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 50mA | 9.53mm | 8542.32.00.41 | 1 | 50mA | DUAL | 5V | BQ4010 | 2.54mm | SRAMs | 5V | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8KX8 | 8 | 8b | 0.004A | 200 ns | 8b | NVSRAM | Parallel | 200ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TH58BVG2S3HTA00 | Kioxia America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Benand™ | Active | 3 (168 Hours) | RoHS Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND (SLC) | 48-TSOP I | 25ns | 4Gb 512M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T633S12BCI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 256 | 85°C | -40°C | 2.5V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | Parallel | 2.6V | 2.4V | 9 Mb | 17mm | 1.4mm | CMOS | 1.5mm | 1 | 395mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 20 | 256 | INDUSTRIAL | 1mm | SRAMs | 3-STATE | 12 ns | 1.1MB | RAM, SDR, SRAM | 38b | Asynchronous | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T633S10BF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 2.5V | 2 | 15mm | RoHS Compliant | Contains Lead | No | 208 | Parallel | 2.6V | 2.4V | 9 Mb | 15mm | 1.4mm | CMOS | 1.5mm | 1 | 405mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 208 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 10 ns | 1.1MB | RAM, SDR, SRAM | 38b | Asynchronous | 0.01A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7025S25G | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 1 (Unlimited) | Non-RoHS Compliant | 84-BPGA | Through Hole | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7025 | 128Kb 8K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1041G30-10BVJXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2012 | Active | 3 (168 Hours) | 48 | 3A991.B.2.A | 8mm | ROHS3 Compliant | Lead Free | 48 | 48-VFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1mm | 8542.32.00.41 | 1 | BOTTOM | 3V | CY7C1041 | YES | 0.75mm | 2.2V | Not Qualified | 2.5/3.3V | 3.6V | 3-STATE | 4Mb 256K x 16 | Volatile | 0.045mA | 2.2V~3.6V | 256KX16 | 16 | 4194304 bit | 0.008A | 10 ns | COMMON | 1V | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7007L15PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | no | Active | 3 (168 Hours) | 80 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 80 | SEMAPHORE; AUTOMATIC POWER DOWN | TQFP | Parallel | 5.5V | 4.5V | 256 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 285mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 80 | COMMERCIAL | 0.65mm | SRAMs | 5V | 3-STATE | 15 ns | 32kB | RAM, SDR, SRAM | 15b | Asynchronous | 0.005A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1312CV18-200BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2003 | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | 1.8V | 15mm | Non-RoHS Compliant | Contains Lead | 165 | PIPELINED ARCHITECTURE | 165-LBGA | not_compliant | 18 Mb | 13mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 1.4mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 1.8V | NOT SPECIFIED | CY7C1312 | 165 | YES | 1mm | 1.7V | Not Qualified | 1.9V | 3-STATE | 450 ps | 18Mb 1M x 18 | Volatile | 0.675mA | 1.7V~1.9V | 1MX18 | 18 | 200MHz | 0.38A | SEPARATE | 1.7V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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BQ4011MA-200 | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | yes | Obsolete | 1 (Unlimited) | 28 | EAR99 | ROHS3 Compliant | 28 | 28-DIP Module (0.61, 15.49mm) | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8542.32.00.41 | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | BQ4011 | NO | 2.54mm | 4.75V | SRAMs | Not Qualified | 5V | 5.5V | 256Kb 32K x 8 | Non-Volatile | 0.075mA | 4.75V~5.5V | 32KX8 | 8 | 262144 bit | 8b | 0.004A | 200 ns | NVSRAM | Parallel | 200ns |
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