Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | I/O Type | Programming Voltage | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "MT53E1536M32D4DT-046 AIT:A TR") |
MT53E1536M32D4DT-046 AIT:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53E768M32D4DT-046 WT:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 200-VFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 24Gb 768M x 32 | Volatile | 0.6V 1.1V | 2.133GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F4G16ABADAH4-AIT:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 63-VFBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 4Gb 256M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
EDB1332BDBH-1DAUT-F-R TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Last Time Buy | 3 (168 Hours) | 134 | EAR99 | 1 | 11.5mm | ROHS3 Compliant | 134-VFBGA | 10mm | Surface Mount | -40°C~125°C TC | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 1mm | 1 | BOTTOM | 1.8V | YES | 0.65mm | R-PBGA-B134 | 1.7V | 1.95V | 1Gb 32M x 32 | Volatile | 1.14V~1.95V | 64MX16 | 16 | 1073741824 bit | 533MHz | SINGLE BANK PAGE BURST | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT41K128M16JT-125 AAT:K TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 111 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 96-TFBGA | Surface Mount | -40°C~105°C TC | SDRAM - DDR3L | 13.75ns | 2Gb 128M x 16 | Volatile | 1.283V~1.45V | 800MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43TR85120AL-125KBLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 78 | 1.35V | 1 | 10.5mm | ROHS3 Compliant | 78 | AUTO/SELF REFRESH | 78-TFBGA | 4 Gb | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.35V | NOT SPECIFIED | YES | 0.8mm | 1.283V | 1.45V | 20ns | 4Gb 512M x 8 | Volatile | 16b | 1.283V~1.45V | 512MX8 | 8 | 800MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61NLP12836EC-200TQLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 100 | 3A991.B.2.A | 20mm | ROHS3 Compliant | 100 | 100-LQFP | 14mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) | QUAD | 260 | 3.3V | 10 | 100 | YES | 0.65mm | 3.135V | Not Qualified | 2.5/3.33.3V | 3.465V | 3-STATE | 3.1ns | 4.5Mb 128K x 36 | Volatile | 0.22mA | 3.135V~3.465V | 128KX36 | 36 | 4718592 bit | 200MHz | 0.085A | COMMON | 3.14V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||
 |
IS42VM16160K-6BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 54 | 54-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | 5.5ns | 256Mb 16M x 16 | Volatile | 1.7V~1.95V | 16b | 166MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS43TR81280BL-125JBLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 78 | 1 | 10.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 78-TFBGA | 8mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.35V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B78 | 1.283V | 1.45V | 20ns | 1Gb 128M x 8 | Volatile | 1.283V~1.45V | 128MX8 | 8 | 1073741824 bit | 800MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25Q16CNIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-UDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 16Mb 2M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25Q32CNIGR | GigaDevice Semiconductor (HK) Limited | 0.9396 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-UDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 32Mb 4M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25WD05CEIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-XFDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 512Kb 64K x 8 | Non-Volatile | 1.65V~3.6V | 100MHz | FLASH | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25Q40CSIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 4Mb 512K x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W631GU6KB-12 TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 96-TFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | 20ns | 1Gb 64M x 16 | Volatile | 1.283V~1.45V | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43LR32160C-6BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Surface Mount | Tape & Reel (TR) | Active | 3 (168 Hours) | 1.8V | ROHS3 Compliant | 90 | 90-TFBGA | 512 Mb | Surface Mount | 0°C~70°C TA | SDRAM - Mobile LPDDR | 60mA | 130mA | 5.5ns | 512Mb 16M x 32 | Volatile | 15b | 1.7V~1.95V | 32b | 166MHz | DRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3558S200BG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | 3 (168 Hours) | 119 | 3A991.B.2.A | 70°C | 0°C | 22mm | Non-RoHS Compliant | BGA | Parallel | not_compliant | 200MHz | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 119 | COMMERCIAL | YES | 1.27mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.4mA | 256KX18 | 18 | 4718592 bit | 0.04A | 3.2 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||
|
70V28L25PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 1Mb 64K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MB85R256FPNF-G-JNERE2 | Fujitsu Electronics America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2015 | Active | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | 28 | 28-SOIC (0.342, 8.69mm Width) | Parallel | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 28-SOP | 150ns | 256Kb 32K x 8 | Non-Volatile | 2.7V~3.6V | FRAM | Parallel | 150ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MB85RS1MTPNF-G-JNERE1 | Fujitsu Electronics America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2015 | Active | 3 (168 Hours) | 85°C | -40°C | 3.3V | RoHS Compliant | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 1 Mb | 30MHz | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 8-SOP | 1Mb 128K x 8 | Non-Volatile | 1.8V~3.6V | 8b | 40MHz | FRAM | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49LV002T-70PI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 32-DIP (0.600, 15.24mm) | Through Hole | -40°C~85°C TC | FLASH | AT49LV002 | 32-PDIP | 70ns | 2Mb 256K x 8 | Non-Volatile | 3V~3.6V | FLASH | Parallel | 50μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1041G30-10BVXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | 2012 | Active | 3 (168 Hours) | 48 | 3A991.B.2.A | 8mm | ROHS3 Compliant | 48 | 48-VFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1mm | 8542.32.00.41 | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.75mm | 2.2V | 3.6V | 4Mb 256K x 16 | Volatile | 2.2V~3.6V | 256KX16 | 16 | 4194304 bit | 10 ns | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||
|
S25FL256SAGBAEA00 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | FL-S | Active | 3 (168 Hours) | Non-RoHS Compliant | 24-TBGA | Surface Mount | -55°C~125°C TA | FLASH - NOR | 256Mb 32M x 8 | Non-Volatile | 2.7V~3.6V | 133MHz | 3V | FLASH | SPI - Quad I/O | 750μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V67602S166BQG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V67602 | 165-CABGA (13x15) | 3.5ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V3569S5DR | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2008 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 3.3V | 2 | 28mm | RoHS Compliant | Contains Lead | No | 208 | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | PQFP | Parallel | 3.45V | 3.15V | 576 kb | 100MHz | 28mm | 3.5mm | CMOS | 1 | 360mA | e0 | Tin/Lead (Sn/Pb) | QUAD | GULL WING | 225 | 3.3V | 208 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 10 ns | 72kB | RAM, SDR, SRAM | 28b | 16KX36 | Synchronous | 0.015A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||
 |
IS65WV1288BLL-55HLA1-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 70°C | -40°C | 3.3V | 1 | ROHS3 Compliant | No | 32 | 32-TFSOP (0.465, 11.80mm Width) | Parallel | 3.6V | 2.5V | 1 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 32-sTSOP I | 55ns | 1Mb 128K x 8 | Volatile | 17b | 2.5V~3.6V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53E2D1CCY-DC TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SM671PEA-AD | Silicon Motion, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25SF161-SHDHR-T | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2014 | no | Active | 1 (Unlimited) | 8 | Non-RoHS Compliant | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | 1 | DUAL | YES | R-PDSO-G8 | 2.5V | 3.6V | 16Mb 2M x 8 | Non-Volatile | 2.5V~3.6V | 16MX1 | 1 | 16777216 bit | 85MHz | 2.7V | FLASH | SPI | 5μs, 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43R86400D-5TLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 66 | 1 | 22.22mm | ROHS3 Compliant | 66 | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 1 | e3 | MATTE TIN | DUAL | 225 | 2.6V | NOT SPECIFIED | YES | 0.65mm | 2.5V | Not Qualified | 2.6V | 2.7V | 3-STATE | 700ps | 512Mb 64M x 8 | Volatile | 0.43mA | 2.5V~2.7V | 64MX8 | 8 | 536870912 bit | 8b | 200MHz | 0.025A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | |||||||||||||||||||||||||||||||||||||
 |
AT28C64X-25PC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1999 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 28-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TC | AT28C64 | 250ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 1ms |
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MT53E768M32D4DT-046 WT:E TR Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
Price: 0.0000
RFQ -
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MT41K128M16JT-125 AAT:K TR Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
Price: 0.0000
RFQ -
IS43TR85120AL-125KBLI-TR ISSI, Integrated Silicon Solution Inc
Memory IC 4 Gb kb 10.5mm mm
Price: 0.0000
RFQ -
IS61NLP12836EC-200TQLI ISSI, Integrated Silicon Solution Inc
2.5/3.33.3V V 100 Pin Memory IC 20mm mm
Price: 0.0000
RFQ -
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IS43TR81280BL-125JBLI-TR ISSI, Integrated Silicon Solution Inc
Memory IC 10.5mm mm
Price: 0.0000
RFQ -
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IS43LR32160C-6BL-TR ISSI, Integrated Silicon Solution Inc
Surface Mount Memory IC 512 Mb kb 130mA mA
Price: 0.0000
RFQ -
IDT71V3558S200BG Integrated Device Technology (IDT)
3.3V V 119 Pin Memory IC 22mm mm
Price: 0.0000
RFQ -
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70V3569S5DR Integrated Device Technology (IDT)
Surface Mount 208 Pin Memory IC 576 kb kb 28mm mm 360mA mA 36b b
Price: 0.0000
RFQ -
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IS43R86400D-5TLI-TR ISSI, Integrated Silicon Solution Inc
2.6V V Memory IC 22.22mm mm
Price: 0.0000
RFQ -
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