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GeneSiC Semiconductor
GeneSiC Semiconductor is a semiconductor company that focuses on the design and manufacturing of silicon carbide (SiC) power devices and modules. They provide innovative solutions for power electronics applications, including power supplies, motor drives, inverters, and electric vehicle charging systems. GeneSiC's SiC-based devices offer higher efficiency, faster switching speeds, and better thermal performance compared to traditional silicon-based devices, contributing to improved energy efficiency and power density in various power conversion systems.Related Parts
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GA50SICP12-227
SIC CO-PACK SJT/RECT 50A 1.2KV
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GC05MPS12-252
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 5A -55°C~175°C 4μA @ 1200V Tape & Reel (TR) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount
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GA100JT17-227
SiC (Silicon Carbide Junction Transistor) Tube 10m Ω @ 100A 14400pF @ 800V 1700V SOT-227-4, miniBLOC
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GA20JT12-263
SiC (Silicon Carbide Junction Transistor) Tube 60m Ω @ 20A 3091pF @ 800V 1200V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
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GA10SICP12-247
SIC CO-PACK SJT/RECT 10A 1.2KV
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GB25MPS17-247
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 25A -55°C~175°C 30μA @ 1700V TO-247-2 Through Hole
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2N7637-GA
SiC (Silicon Carbide Junction Transistor) Tube 170m Ω @ 7A 720pF @ 35V 650V TO-257-3
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2N7635-GA
SiC (Silicon Carbide Junction Transistor) Bulk 415m Ω @ 4A 324pF @ 35V 650V TO-257-3
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GA05JT03-46
SiC (Silicon Carbide Junction Transistor) Bulk 240m Ω @ 5A 300V TO-46-3
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GA100SICP12-227
GENESIC SEMICONDUCTOR GA100SICP12-227SIC CO-PACK, 1.2kV, TO-227
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GB05MPS17-247
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 5A -55°C~175°C 6μA @ 1700V TO-247-2 Through Hole
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GC50MPS06-247
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 175°C Max TO-247-2 Through Hole
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GB10SLT12-252
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 2V @ 10A -55°C~175°C 250μA @ 1200V Tube TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount
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GB10SLT12-220
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 10A -55°C~175°C 40μA @ 1200V 2-Termination Tube TO-220-2 Through Hole
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