Items : %s%s
GeneSiC Semiconductor
GeneSiC Semiconductor is a semiconductor company that focuses on the design and manufacturing of silicon carbide (SiC) power devices and modules. They provide innovative solutions for power electronics applications, including power supplies, motor drives, inverters, and electric vehicle charging systems. GeneSiC's SiC-based devices offer higher efficiency, faster switching speeds, and better thermal performance compared to traditional silicon-based devices, contributing to improved energy efficiency and power density in various power conversion systems.Related Parts
-
MBR7580R
Schottky, Reverse Polarity Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 840mV @ 75A -55°C~150°C 1mA @ 80V 1-Termination Bulk DO-203AB, DO-5, Stud Chassis, Stud Mount
-
GA100SCPL12-227E
GA100SCPL12-227E datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from GeneSiC Semiconductor stock available at Utmel
-
GA10JT12-263
SiC (Silicon Carbide Junction Transistor) Tube 120m Ω @ 10A 1403pF @ 800V 1200V TO-263
-
GA20SICP12-247
SiC (Silicon Carbide Junction Transistor) Tube 50m Ω @ 20A 3091pF @ 800V 1200V TO-247-3
-
2N7637-GA
SiC (Silicon Carbide Junction Transistor) Tube 170m Ω @ 7A 720pF @ 35V 650V TO-257-3
-
2N7640-GA
SiC (Silicon Carbide Junction Transistor) Bulk 105m Ω @ 16A 1534pF @ 35V 650V TO-276AA
-
GA05JT12-247
SiC (Silicon Carbide Junction Transistor) Tube 280m Ω @ 5A 1200V TO-247-3
-
GA10JT12-247
SiC (Silicon Carbide Junction Transistor) Tube 140m Ω @ 10A 1200V TO-247-3
-
GA20JT12-247
SiC (Silicon Carbide Junction Transistor) Tube 70m Ω @ 20A 1200V TO-247-3
-
GA20JT12-263
SiC (Silicon Carbide Junction Transistor) Tube 60m Ω @ 20A 3091pF @ 800V 1200V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
-
GA05JT01-46
SiC (Silicon Carbide Junction Transistor) Bulk 240m Ω @ 5A 100V TO-46-3
-
GA10SICP12-247
SIC CO-PACK SJT/RECT 10A 1.2KV
-
GA100SICP12-227
GENESIC SEMICONDUCTOR GA100SICP12-227SIC CO-PACK, 1.2kV, TO-227
-
GB01SLT12-252
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 1A -55°C~175°C 2μA @ 1200V 2-Termination Cut Tape (CT) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount
Related Blogs
-
IGBT vs MOSFET :Concepts, Differences and ApplicationsWednesday 30 August, 2023 1546
-
Infineon and Semicon Denver Forge Electric Vehicle Chip Supply AgreementThursday 20 July, 2023 1308
-
Policy opportunities for the chip and semiconductor industry under the skyrocketing A-share marketMonday 30 September, 2024 1381
-
Aging is getting worse? Demand for hearing aid chips surges?Thursday 02 November, 2023 1402
-
Arrow Reported Second-Quarter Sales of $8.51 Billion, Down 10% Year-Over-YearMonday 21 August, 2023 1133


Need Help?

