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IGBTs Modules
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IGBT module product filter
Common filter conditions include, manufacturer, configuration, collector maximum current, voltage, pin count, etc.
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 12 Weeks
- 14 Weeks
- 16 Weeks
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Panel, Screw
- Screw
Mounting Type
- Chassis Mount
Number of Pins
- 20
- 23
- 24
- 29
- 7
Number of Terminations
- 20
- 23
- 24
- 29
- 35
- 7
Operating Temperature
- -40°C~125°C
- -40°C~125°C TJ
- -40°C~150°C
- -40°C~150°C TJ
Package / Case
- Module
Part Status
- Active
- Not For New Designs
Pbfree Code
- no
- yes
Published
- 2001
- 2002
- 2014
Series
- C
Surface Mount
- NO
Transistor Element Material
- SILICON
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Operating Temperature | Voltage - Rated DC | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Supplier Device Package | Input | Reverse Voltage | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Transistor Element Material | Input Capacitance | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Channel Type | Gate-Emitter Thr Voltage-Max | Maximum Operating Temperature (°C) | Minimum Operating Temperature (°C) | Mounting | Package Height | Package Length | Package Width | PCB changed | Supplier Package | ECCN (US) | Maximum Power Dissipation (mW) | Military | Typical Collector Emitter Saturation Voltage (V) | Maximum Collector-Emitter Voltage (V) | Maximum Gate Emitter Voltage (V) | Maximum Continuous Collector Current (A) | Maximum Gate Emitter Leakage Current (uA) |
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FZ400R17KE3S4HOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | Module | Chassis Mount | -40°C~125°C | 2250W | Single | Standard | 3mA | 2.45V @ 15V, 400A | Trench Field Stop | No | 36nF @ 25V | 1700V | 620A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DM2G200SH12AE | MagnaChip Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Obsolete | Supplier Unconfirmed | 7 | Dual | N | 150 | -40 | Screw | 29.95(Max) | 94 | 48 | 7 | Case 7DM-2 | EAR99 | 1350000 | No | 1.8 | 1200 | ±20 | 275 | 0.3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APT65GP60JDQ2 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Screw | 1999 | POWER MOS 7® | Active | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | Lead Free | 198A | No | 4 | ISOTOP | Chassis Mount | 600V | 431W | Single | Single | ISOTOP® | Standard | 130A | 600V | 1.25mA | 2.7V @ 15V, 65A | PT | No | 7.4nF @ 25V | 600V | 130A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FS200R12KT4RPB11BPSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FD650R17IE4BOSA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | 2002 | PrimePack™2 | no | Active | 1 (Unlimited) | 10 | EAR99 | ROHS3 Compliant | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 10 | NO | R-XUFM-X10 | Not Qualified | 4150W | 1 | Single | ISOLATED | N-CHANNEL | Standard | POWER CONTROL | SILICON | 5mA | 720 ns | 2.45V @ 15V, 650A | 1870 ns | Yes | 54nF @ 25V | 1700V | 930A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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F4-50R07W2H3_B51 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 42 Weeks | 2017 | Active | Not Applicable | EAR99 | Non-RoHS Compliant | unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DL2G75SH6N | MagnaChip Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Obsolete | Supplier Unconfirmed | 6 | Dual | N | 150 | -40 | Through Hole | 34 | 66 | 8.15(Max) | 6 | Case 6DM-2 | EAR99 | 300000 | No | 2.1 | 600 | ±20 | 100 | 0.1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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50MT060WH | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 2003 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | Contains Lead | 114A | 12-MTP Module | Chassis Mount | -40°C~150°C TJ | 600V | 658W | 658W | Half Bridge | 12-MTP | Standard | 114A | 600V | 3.2V | 7.1nF | 400μA | 3.2V @ 15V, 100A | PT | No | 7.1nF @ 30V | 600V | 114A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MIEB101H1200EH | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | Bulk | Active | 1 (Unlimited) | 14 | ROHS3 Compliant | Lead Free | UL RECOGNIZED | E3 | Chassis Mount | -40°C~125°C TJ | UPPER | UNSPECIFIED | R-PUFM-X14 | Insulated Gate BIP Transistors | 630W | 630W | 4 | Full Bridge Inverter | ISOLATED | N-CHANNEL | Standard | 183A | 1.2kV | 2.2V | POWER CONTROL | SILICON | 7.43nF | 300μA | 175 ns | 2.2V @ 15V, 100A | 700 ns | No | 20V | 7.43nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VS-GB70LA60UF | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount, Screw | 2000 | Obsolete | 1 (Unlimited) | 4 | EAR99 | 38.3mm | ROHS3 Compliant | 4 | UL RECOGNIZED, LOW CONDUCTION LOSS | SOT-227-4, miniBLOC | Unknown | 12.3mm | 25.7mm | Chassis Mount | -40°C~150°C TJ | UPPER | UNSPECIFIED | 4 | 447W | 447W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 111A | 600V | 600V | POWER CONTROL | SILICON | 100μA | 2.23V | 277 ns | 2.44V @ 15V, 70A | 308 ns | NPT | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FP15R12W1T7PB3BPSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MUBW50-17T8 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Chassis Mount | 2009 | yes | Active | 1 (Unlimited) | 24 | ROHS3 Compliant | 3 | UL RECOGNIZED | E3 | Chassis Mount | -40°C~125°C TJ | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | MUBW | 24 | R-XUFM-X24 | Insulated Gate BIP Transistors | Not Qualified | 290W | 290W | 7 | Three Phase Inverter with Brake | ISOLATED | N-CHANNEL | Three Phase Bridge Rectifier | 2.2kV | 74A | 1.7kV | 2.4V | POWER CONTROL | SILICON | 4.4nF | 400μA | 300 ns | 2.4V @ 15V, 50A | 980 ns | Trench | Yes | 20V | 4.4nF @ 25V | 1700V | |||||||||||||||||||||||||||||||||||||||||||||
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VII100-06P1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Chassis Mount, Screw | 2006 | yes | Obsolete | 1 (Unlimited) | 12 | RoHS Compliant | 12 | ECO-PAC2 | Chassis Mount | -40°C~150°C TJ | e4 | Gold (Au) - with Nickel (Ni) barrier | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | VII | 12 | Insulated Gate BIP Transistors | Not Qualified | 294W | 294W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 93A | 600V | 2.8V | MOTOR CONTROL | SILICON | 4.2nF | 1.4mA | 210 ns | 2.8V @ 15V, 100A | 490 ns | NPT | Yes | 20V | 4.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT300A170G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | Chassis Mount, Screw | 2011 | yes | Active | 1 (Unlimited) | 7 | EAR99 | RoHS Compliant | 7 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 7 | 1.66kW | 1660W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 400A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 26.5nF | 750μA | 450 ns | 2.4V @ 15V, 300A | 1100 ns | Trench Field Stop | No | 26.5nF @ 25V | 1700V | |||||||||||||||||||||||||||||||||||||||||||||||||||
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FF23MR12W1M1PB11BPSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Active | Module | Chassis Mount | -40°C~150°C TJ | 0.2W | 2 Independent | Standard | Trench | Yes | 3.68nF @ 800V | 1200V | 50A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT300A120G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | Chassis Mount, Screw | 2009 | yes | Active | 1 (Unlimited) | 7 | EAR99 | RoHS Compliant | 7 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 7 | 1.38kW | 1380W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 420A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 21nF | 500μA | 340 ns | 2.1V @ 15V, 300A | 610 ns | Trench Field Stop | No | 21nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGF30TL601G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount, Screw | 2012 | Obsolete | 1 (Unlimited) | EAR99 | 150°C | -40°C | RoHS Compliant | 12 | SP1 | Chassis Mount | Insulated Gate BIP Transistors | 140W | 1 | Three Level Inverter | Standard | 42A | 600V | 600V | 1.35nF | 250μA | 2.45V @ 15V, 30A | NPT | No | 20V | 1.35nF @ 25V | 2.45 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VS-GB75LA60UF | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Chassis Mount, Screw | 2016 | Last Time Buy | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4 | SOT-227-4, miniBLOC | Chassis Mount | -40°C~150°C TJ | 447W | 447W | Single | Standard | 109A | 600V | 2V | 50μA | 2V @ 15V, 35A | NPT | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTCV60HM70BT3G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 22 Weeks | Chassis Mount | 2012 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | 3 | SP3 | Chassis Mount | -40°C~150°C TJ | Insulated Gate BIP Transistors | 250W | 250W | 1 | Boost Chopper, Full Bridge | Standard | 50A | 600V | 1.9V | 3.15nF | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GHIS080A060S1-E1 | Global Power | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | 2016 | Active | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT200DU60TG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 12 | EAR99 | RoHS Compliant | 20 | AVALANCHE RATED | SP4 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 12 | R-XUFM-X12 | Not Qualified | 625W | 625W | 2 | Dual, Common Source | ISOLATED | N-CHANNEL | Dual | Standard | 290A | 600V | 600V | POWER CONTROL | SILICON | 12.3nF | 250μA | 180 ns | 1.9V @ 15V, 200A | 370 ns | Trench Field Stop | Yes | 12.3nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||
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FS450R17KE4BOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2002 | EconoPACK™+ | no | Not For New Designs | 1 (Unlimited) | 29 | EAR99 | ROHS3 Compliant | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 29 | NO | R-XUFM-X29 | Not Qualified | 2500W | 6 | Full Bridge | ISOLATED | N-CHANNEL | Standard | POWER CONTROL | SILICON | 3mA | 380 ns | 2.3V @ 15V, 450A | 1600 ns | Trench Field Stop | Yes | 36nF @ 25V | 1700V | 600A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APT15GF120JCU2 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Chassis, Screw, Stud | 1997 | Obsolete | 1 (Unlimited) | 4 | 150°C | -55°C | RoHS Compliant | 4 | SOT-227-4, miniBLOC | Chassis, Stud Mount | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 156W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 30A | 1.2kV | 1.2kV | POWER CONTROL | 1nF | 250μA | 110 ns | 3.7V @ 15V, 15A | 396 ns | NPT | No | 20V | 1nF @ 25V | 3.7 V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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F475R07W2H3B51BPSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Module | Chassis Mount | -40°C~150°C TJ | 250W | Three Phase Inverter | Standard | 1mA | 1.55V @ 15V, 37.5A | Yes | 4.7nF @ 25V | 650V | 75A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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A2C25S12M3 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | ACTIVE (Last Updated: 7 months ago) | Active | 1 (Unlimited) | 35 | RoHS Compliant | UL RECOGNIZED | Module | Chassis Mount | -40°C~150°C TJ | UPPER | UNSPECIFIED | A2C25S12 | NO | R-XUFM-X35 | 197W | 6 | Three Phase Inverter with Brake | N-CHANNEL | 197W | Three Phase Bridge Rectifier | MOTOR CONTROL | SILICON | 100μA | 125.2 ns | 2.45V @ 15V, 25A | 338 ns | Trench Field Stop | Yes | 20V | 1550pF @ 25V | 2.45 V | 1200V | 25A | 7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VS-S1683 | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FP25R12W1T7B11BPSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | EasyPIM™ 1B | Active | 1 (Unlimited) | ROHS3 Compliant | Module | Chassis Mount | -40°C~175°C | 20mW | Three Phase Inverter | Three Phase Bridge Rectifier | 5.6μA | 1.6V @ 15V, 25A (Typ) | Trench Field Stop | Yes | 4.77nF @ 25V | 1200V | 25A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRG7T300SD12B | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Chassis Mount | 2014 | Obsolete | 1 (Unlimited) | RoHS Compliant | POWIR® 62 Module | Chassis Mount | -40°C~150°C TJ | 1.8kW | 1800W | Single | Standard | 600A | 1.2kV | 2.2V | 41.5nF | 4mA | 2.2V @ 15V, 300A | No | 41.5nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DF200R12W1H3FB11BPSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2016 | Discontinued | 1 (Unlimited) | ROHS3 Compliant | Contains Lead | Not Halogen Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FS20R06VE3BOMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Screw | 2002 | no | Not For New Designs | 1 (Unlimited) | 13 | EAR99 | RoHS Compliant | Contains Lead | Tin | 13 | Module | Chassis Mount | -40°C~150°C | UPPER | WIRE | 13 | 6 | Three Phase Inverter | Not Halogen Free | N-CHANNEL | 71.5W | Standard | 25A | 600V | SILICON | 1mA | 1.55V | 320 ns | 2V @ 15V, 20A | 250 ns | No | 1.1nF @ 25V | 25A |
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DM2G200SH12AE MagnaChip Semiconductor
DM2G200SH12AE datasheet pdf and Transistors - IGBTs - Modules product details from MagnaChip Semiconductor stock available at Utmel
Price: 0.0000
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DL2G75SH6N MagnaChip Semiconductor
DL2G75SH6N datasheet pdf and Transistors - IGBTs - Modules product details from MagnaChip Semiconductor stock available at Utmel
Price: 0.0000
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FP15R12W1T7PB3BPSA1 Infineon Technologies
FP15R12W1T7PB3BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
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FF23MR12W1M1PB11BPSA1 Infineon Technologies
FF23MR12W1M1PB11BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
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VS-GB75LA60UF Vishay Semiconductor Diodes Division
Trans IGBT Module N-CH 600V 109A 4-Pin SOT-227
Price: 0.0000
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FS450R17KE4BOSA1 Infineon Technologies
FS450R17KE4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
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FP25R12W1T7B11BPSA1 Infineon Technologies
INFINEON - FP25R12W1T7B11BPSA1 - IGBT-MODUL, 1.2KV, 25A, 175°C
Price: 0.0000
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