Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Max Dual Supply Voltage | Drain to Source Resistance | Clamping Voltage | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Drain to Source Voltage (Vdss) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRG8P25N120KDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2 Weeks | Through Hole | Tube | 2014 | Obsolete | 1 (Unlimited) | EAR99 | 15.87mm | RoHS Compliant | Lead Free | 3 | TO-247-3 | No SVHC | unknown | 20.7mm | 5.31mm | Through Hole | -40°C~150°C TJ | Standard | 180W | Single | 70 ns | 25A | 1.2kV | 2V | 1.7V | 2V @ 15V, 15A | 1200V | 40A | 600V, 15A, 10 Ω, 15V | 135nC | 45A | 20ns/170ns | 800μJ (on), 900μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IGW50N65F5AXKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2015 | Automotive, AEC-Q101, TrenchStop™ | yes | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 270W | 270W | 1 | COLLECTOR | Halogen Free | N-CHANNEL | Single | 80A | 650V | 650V | POWER CONTROL | SILICON | 35 ns | 2.1V @ 15V, 50A | 196 ns | Trench | 400V, 25A, 12 Ω, 15V | 108nC | 150A | 21ns/156ns | 490μJ (on), 140μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SIGC25T60NCX1SA7 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 30A | NPT | 600V | 30A | 300V, 30A, 8.2Ohm, 15V | 90A | 21ns/110ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGA6560WDF | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-3P-3, SC-65-3 | Through Hole | 6.401g | -55°C~175°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 306W | 306W | 110 ns | 120A | 650V | 2.3V | 2.3V @ 15V, 60A | Trench Field Stop | 400V, 60A, 6 Ω, 15V | 84nC | 180A | 25.6ns/71ns | 2.46mJ (on), 520μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRG7PH46UDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2010 | Obsolete | 1 (Unlimited) | 3 | EAR99 | 15.87mm | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | Through Hole | 38.000013g | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 390W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 390W | 45 ns | 140 ns | 40A | 1.2kV | 2V | 60ns | POWER CONTROL | 410 ns | SILICON | 1.7V | 80 ns | 2V @ 15V, 40A | 680 ns | Trench | 1200V | 6V | 60ns | 600V, 40A, 10 Ω, 15V | 220nC | 160A | 45ns/410ns | 2.61mJ (on), 1.85mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
 |
IXBF15N300C | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Through Hole | Tube | 2013 | BIMOSFET™ | Active | 1 (Unlimited) | ROHS3 Compliant | i4-Pac™-5 (3 Leads) | Through Hole | -55°C~150°C TJ | Standard | 300W | 300W | 706 ns | 37A | 3kV | 6V | 6V @ 15V, 15A | 3000V | 1500V, 15A, 10 Ω, 15V | 267nC | 300A | 40ns/455ns | 9.15mJ (on), 1.4mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SIGC42T60UNX1SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2016 | no | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Die | Surface Mount | -55°C~150°C TJ | Standard | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | S-XUUC-N3 | Not Qualified | 1 | SINGLE | Halogen Free | N-CHANNEL | 600V | 3.15V | POWER CONTROL | SILICON | 600V | 79 ns | 3.15V @ 15V, 50A | 370 ns | NPT | 50A | 400V, 50A, 6.8 Ω, 15V | 150A | 48ns/350ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SIGC25T60NCX1SA4 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 30A | NPT | 600V | 30A | 300V, 30A, 8.2Ohm, 15V | 90A | 21ns/110ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJP60V0DPM-00#T1 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-3PFM, SC-93-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | 40W | 40W | 1 | ISOLATED | N-CHANNEL | Single | 45A | 600V | 2.1V | POWER CONTROL | SILICON | 85 ns | 2.1V @ 15V, 22A | 170 ns | Trench | 7.5V | 300V, 22A, 5 Ω, 15V | 75nC | 45ns/100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SIGC12T60NCX1SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 10A | NPT | 600V | 10A | 300V, 10A, 27Ohm, 15V | 30A | 21ns/110ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXXK300N60B3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2012 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED | TO-264-3, TO-264AA | not_compliant | Through Hole | -55°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | Insulated Gate BIP Transistors | 2.3kW | 2300W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 550A | 600V | 1.6V | POWER CONTROL | SILICON | 137 ns | 1.6V @ 15V, 100A | 430 ns | PT | 20V | 5.5V | 400V, 100A, 1 Ω, 15V | 460nC | 1140A | 50ns/190ns | 3.45mJ (on), 2.86mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SIGC42T60NCX1SA5 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | 2016 | Last Time Buy | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | Die | Surface Mount | -55°C~150°C | Standard | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | S-XUUC-N4 | Not Qualified | 1 | Halogen Free | N-CHANNEL | Single | 600V | 600V | POWER CONTROL | SILICON | 600V | 55 ns | 2.5V @ 15V, 50A | 160 ns | NPT | 50A | 300V, 50A, 3.3 Ω, 15V | 150A | 43ns/130ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IKW40N65H5AXKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2014 | Automotive, AEC-Q101, TrenchStop™ | yes | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 250W | 250W | 1 | COLLECTOR | Halogen Free | N-CHANNEL | Single | 75 ns | 74A | 650V | 650V | POWER CONTROL | SILICON | 32 ns | 2.1V @ 15V, 40A | 204 ns | Trench | 400V, 20A, 15 Ω, 15V | 92nC | 120A | 20ns/153ns | 380μJ (on), 120μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SIGC42T60UNX1SA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 3.15V @ 15V, 50A | NPT | 600V | 50A | 400V, 50A, 6.8Ohm, 15V | 150A | 48ns/350ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IKW50N65F5AXKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2013 | Automotive, AEC-Q101, TrenchStop™ | yes | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 270W | 270W | 1 | COLLECTOR | Halogen Free | N-CHANNEL | Single | 77 ns | 80A | 650V | 650V | POWER CONTROL | SILICON | 35 ns | 2.1V @ 15V, 50A | 196 ns | Trench | 400V, 25A, 12 Ω, 15V | 108nC | 150A | 21ns/156ns | 490μJ (on), 140μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IGW50N65H5AXKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2015 | Automotive, AEC-Q101, TrenchStop™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 270W | 270W | 1 | COLLECTOR | Halogen Free | N-CHANNEL | Single | 80A | 650V | 650V | POWER CONTROL | SILICON | 33 ns | 2.1V @ 15V, 50A | 213 ns | Trench | 400V, 25A, 12 Ω, 15V | 116nC | 150A | 21ns/173ns | 450μJ (on), 160μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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SIGC42T60UNX7SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 3.15V @ 15V, 50A | NPT | 600V | 50A | 400V, 50A, 6.8Ohm, 15V | 150A | 48ns/350ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SIGC12T60NCX1SA5 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2016 | no | Last Time Buy | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | Die | Surface Mount | -55°C~150°C TJ | Standard | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | YES | S-XUUC-N2 | Not Qualified | 1 | SINGLE | Halogen Free | N-CHANNEL | 600V | 600V | POWER CONTROL | SILICON | 600V | 29 ns | 2.5V @ 15V, 10A | 135 ns | NPT | 10A | 300V, 10A, 27 Ω, 15V | 30A | 21ns/110ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IGW75N60H3FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 428W | 1 | COLLECTOR | N-CHANNEL | Single | 140A | 600V | POWER CONTROL | SILICON | 2.3V @ 15V, 75A | Trench Field Stop | 400V, 75A, 5.2 Ω, 15V | 470nC | 225A | 31ns/265ns | 3mJ (on), 1.7mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGI3040G2-F085 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Through Hole | Tube | 2006 | Automotive, AEC-Q101, EcoSPARK® | yes | Active | 1 (Unlimited) | ROHS3 Compliant | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | 2.084g | -55°C~175°C TJ | Logic | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | 150W | 150W | N-CHANNEL | Single | 400V | 41A | 400V | 1.5V | 7000ns | 1.68V | 1.25V @ 4V, 6A | 12V | 2.2V | 15000ns | 21nC | 900ns/4.8μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXYT20N120C3D1HV | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Tube | XPT™, GenX3™ | Active | 1 | 2 | RoHS Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | SINGLE | GULL WING | YES | R-PSSO-G2 | Insulated Gate BIP Transistors | 230W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 230W | 29ns | POWER CONTROL | SILICON | 60 ns | 3.4V @ 15V, 20A | 220 ns | 20V | 1200V | 36A | 5V | 600V, 20A, 10 Ω, 15V | 53nC | 88A | 20ns/90ns | 1.3mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGB30H60DLFB | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | ACTIVE (Last Updated: 7 months ago) | Surface Mount | Tape & Reel (TR) | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | STGB30 | Insulated Gate BIP Transistors | 260W | 260W | N-CHANNEL | 600V | 60A | 600V | 2V | 2V @ 15V, 30A | Trench Field Stop | 20V | 7V | 400V, 30A, 10 Ω, 15V | 149nC | 120A | -/146ns | 393μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGH20N60UFDTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.6mm | ROHS3 Compliant | Lead Free | No | 3 | LOW CONDUCTION LOSS | TO-247-3 | No SVHC | 20.6mm | 4.7mm | Through Hole | 6.39g | -55°C~150°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | Insulated Gate BIP Transistors | 165W | 165W | 1 | TO-247AB | COLLECTOR | N-CHANNEL | Single | 13 ns | 34 ns | 40A | 600V | 600V | POWER CONTROL | 87 ns | SILICON | 600V | 29 ns | 2.4V @ 15V, 20A | 155 ns | Field Stop | 20V | 6.5V | 64ns | 400V, 20A, 10 Ω, 15V | 63nC | 60A | 13ns/87ns | 380μJ (on), 260μJ (off) | ||||||||||||||||||||||||||||||||||||||
|
IRG4PF50WPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2004 | Last Time Buy | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.875mm | ROHS3 Compliant | Lead Free | 51A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 | No SVHC | 20.3mm | 5.3mm | Through Hole | 38.000013g | -55°C~150°C TJ | 600V | Standard | SINGLE | Insulated Gate BIP Transistors | 200W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Dual | 200W | 29 ns | 51A | 900V | 2.7V | POWER CONTROL | 110 ns | SILICON | 26ns | 2.25V | 54 ns | 2.7V @ 15V, 28A | 370 ns | 20V | 6V | 220ns | 720V, 28A, 5 Ω, 15V | 160nC | 204A | 29ns/110ns | 190μJ (on), 1.06mJ (off) | |||||||||||||||||||||||||||||||||||||||
 |
IKQ75N120CT2XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2014 | TrenchStop™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 938W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | POWER CONTROL | SILICON | 85 ns | 2.15V @ 15V, 75A | 563 ns | Trench Field Stop | 1200V | 150A | 600V, 75A, 6 Ω, 15V | 370nC | 300A | 37ns/328ns | 6.7mJ (on), 4.1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IGC10T65U8QX1SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Active | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXBH24N170 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2006 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 38W | 1.4Ohm | 1.06 μs | 60A | 1.7kV | 2.5V | 3.2A | POWER CONTROL | 65 ns | SILICON | 28ns | 26 ns | 30V | 500V | 190 ns | 2.5V @ 15V, 24A | 1285 ns | 20V | 1700V | 5V | 140nC | 230A | |||||||||||||||||||||||||||||||||||||||||
 |
APT44GA60B | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 22 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 337W | 337W | 1 | COLLECTOR | N-CHANNEL | Single | 78A | 600V | 600V | POWER CONTROL | SILICON | 29 ns | 2.5V @ 15V, 26A | 208 ns | PT | 30V | 6V | 400V, 26A, 4.7 Ω, 15V | 128nC | 130A | 16ns/84ns | 409μJ (on), 258μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG7PH37K10D-EPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2013 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | No | 3 | TO-247-3 | Through Hole | -40°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 216W | 216W | N-CHANNEL | Single | 120 ns | 45A | 1.2kV | 2.4V | 45ns | 2.4V @ 15V, 15A | 1200V | 7.5V | 100ns | 600V, 15A, 10 Ω, 15V | 135nC | 60A | 50ns/240ns | 1mJ (on), 600μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRGP50B60PDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Bulk | 2004 | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | Tin | 75A | No | 3 | HIGH RELIABILITY, LOW CONDUCTION LOSS | TO-247-3 | No SVHC | 24.99mm | 5.3086mm | Through Hole | 38.000013g | -55°C~150°C TJ | 600V | Standard | Insulated Gate BIP Transistors | 370W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 370W | 33 ns | 50 ns | 75A | 600V | 600V | 150°C | POWER CONTROL | 140 ns | SILICON | 26ns | 2V | 59 ns | 2.6V @ 15V, 50A | 190 ns | NPT | 20V | 75A | 5V | 65ns | 390V, 33A, 3.3 Ω, 15V | 240nC | 150A | 34ns/130ns | 360μJ (on), 380μJ (off) |
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IGC10T65U8QX1SA1 Infineon Technologies
IGC10T65U8QX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IRG7PH37K10D-EPBF Infineon Technologies
IRG7PH37K10D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IRGP50B60PDPBF Infineon Technologies
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