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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Radiation Hardening Number of Pins Additional Feature Package / Case Mounting Type Operating Temperature Technology Operating Mode Input Type HTS Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Collector Current-Max (IC) DC Current Gain-Min (hFE) Repetitive Peak Off-state Voltage Element Configuration Power Dissipation Turn On Delay Time Max Breakdown Voltage Supplier Device Package Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Vce(on) (Max) @ Vge, Ic IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Voltage - Off State Current - On State (It (RMS)) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) Triac Type Critical Rate of Rise of Commutation Voltage-Min
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0.00000000 download 16 Weeks Surface Mount Tube 2011 yes Active 1 (Unlimited) ROHS3 Compliant Lead Free 8 8-VDFN Surface Mount -40°C~150°C TJ Standard NOT SPECIFIED NOT SPECIFIED 8 1.8W 400V 9V 9V @ 2.5V, 150A 150A
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