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Discrete Semiconductors

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Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Lead Free Radiation Hardening Number of Pins Package / Case REACH SVHC Mounting Type Operating Temperature Technology Operating Mode Input Type HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases Non-rep Pk Forward Current-Max Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Max Breakdown Voltage Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Voltage - DC Reverse (Vr) (Max) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Vce(on) (Max) @ Vge, Ic IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Gate-Emitter Thr Voltage-Max Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max) Triac Type
BCR4CM-16LH#BH0 BCR4CM-16LH#BH0 Renesas Electronics America 0.0000
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0.00000000 download Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -40°C~150°C TJ 4 Single TRIAC 800V 4A 1.5V 30A @ 60Hz 35mA Standard
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0.00000000 download 16 Weeks Through Hole Tube 2012 yes Active 1 (Unlimited) ROHS3 Compliant TO-3PFM, SC-93-3 Through Hole 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED RJH60D 3 40W 40W 100 ns 45A 600V 2.2V 2.2V @ 15V, 22A Trench 300V, 22A, 5 Ω, 15V 46nC 40ns/80ns 230μJ (on), 290μJ (off)
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0.00000000 download 16 Weeks Surface Mount Cut Tape (CT) 2010 Discontinued 1 (Unlimited) ROHS3 Compliant 83 SC-83 Surface Mount 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED RJP60D 4 122W 122W Single 600V 45A 600V 2.2V 2.2V @ 15V, 22A 300V, 22A, 5 Ω, 15V 45nC 35ns/90ns
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0.00000000 download 16 Weeks Surface Mount Tube 2012 Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Powers Single 30W Tc 11A N-Channel 700m Ω @ 5.5A, 10V 1450pF @ 25V 37.5nC @ 10V 11A Ta 600V 10V ±30V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free No 5 SC-100, SOT-669 No SVHC Surface Mount 150°C TJ MOSFET (Metal Oxide) 5 1 65W 16 ns 65W Tc 25A 36 ns N-Channel 14m Ω @ 12.5A, 10V 3000pF @ 10V 41nC @ 10V 4.5ns 6.5 ns 20V 25A Ta 100V 10V ±20V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2009 yes Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 2.5W Ta 900mA SWITCHING 3.2Ohm 350V SILICON N-Channel 3 Ω @ 450mA, 10V 460pF @ 25V 20nC @ 10V 0.9A 900mA Ta 350V 7.2A 4V 10V ±20V
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0.00000000 download 16 Weeks Through Hole Tube 2010 yes Active 1 (Unlimited) ROHS3 Compliant TO-3PFM, SC-93-3 Through Hole 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED RJP60D 3 40W 40W 45A 600V 2.2V 2.2V @ 15V, 22A 300V, 22A, 5 Ω, 15V 45nC 35ns/90ns
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0.00000000 download 16 Weeks Through Hole Tube 2013 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-3P-3, SC-65-3 Through Hole 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED 4 Insulated Gate BIP Transistors 320W 320W N-CHANNEL Single 200 ns 70A 1.2kV 2.3V 2.3V @ 15V, 35A Trench 1200V 600V, 35A, 5 Ω, 15V 166nC 53ns/185ns 3.2mJ (on), 2.5mJ (off)
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0.00000000 download 16 Weeks Surface Mount Tube 2011 yes Active 1 (Unlimited) ROHS3 Compliant Lead Free 8 8-VDFN Surface Mount -40°C~150°C TJ Standard NOT SPECIFIED NOT SPECIFIED 8 1.8W 400V 9V 9V @ 2.5V, 150A 150A
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0.00000000 download Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) Through Hole -40°C~125°C TJ 3 SCR 800V 470mA 3mA 800mV 20A @ 60Hz 30μA Standard Recovery 1.8V 100μA 300mA
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0.00000000 download 16 Weeks Surface Mount Tube 2013 Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant SC-83 Surface Mount 8541.10.00.80 SINGLE GULL WING 4 R-PSSO-G2 150°C Rectifier Diodes SILICON 1 SINGLE Standard ULTRA FAST RECOVERY 1 120A CATHODE Fast Recovery =< 500ns, > 200mA (Io) 1μA @ 600V 3V @ 30A -55°C~150°C 600V 30A 600V 1μA 25 ns
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