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Discrete Semiconductors

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Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Mounting Type Operating Temperature Technology Operating Mode Input Type HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases Non-rep Pk Forward Current-Max Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Diode Configuration Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Vce(on) (Max) @ Vge, Ic IGBT Type Gate-Emitter Voltage-Max Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Gate-Emitter Thr Voltage-Max Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Resistor - Base (R1) Resistor - Emitter Base (R2)
FA4F4M-T1B-A FA4F4M-T1B-A Renesas Electronics America 0.0000
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0.00000000 download yes Obsolete 1 (Unlimited) RoHS Compliant 3 YES BIP General Purpose Small Signal 200mW 1 NPN 0.2W SILICON NPN - Pre-Biased 100nA ICBO 50V 100mA 60 @ 50mA 5V 200mV @ 250μ, 5mA 22 Ω 22 Ω
RJS6004WDPK-00#T0 RJS6004WDPK-00#T0 Renesas Electronics America 38.0262
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0.00000000 download 16 Weeks Through Hole Tube Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole 8541.10.00.80 SINGLE 4 R-PSFM-T3 150°C Rectifier Diodes SILICON CARBIDE 2 Schottky GENERAL PURPOSE 1 60A Common Cathode Fast Recovery =< 500ns, > 200mA (Io) 10μA @ 600V 1.8V @ 10A -55°C~150°C 600V 10A 1 Pair Common Cathode 10A DC 10μA 15ns
RQA0004PXDQS#H1 RQA0004PXDQS#H1 Renesas Electronics America 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) yes Obsolete 1 (Unlimited) EAR99 RoHS Compliant 4 TO-243AA Surface Mount 150°C MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power 1 Single 3W Ta 300mA N-Channel 900mV @ 1mA 0.3A 300mA Ta 16V ±5V
CR05BM-12#F00 CR05BM-12#F00 Renesas Electronics America 0.0000
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0.00000000 Last Time Buy 1 (Unlimited) ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) Through Hole -40°C~125°C TJ 600V 630mA 5mA 800mV 8A @ 50Hz 100μA Standard Recovery 1.2V 500μA 500mA
CR04AM-12A#BD0 CR04AM-12A#BD0 Renesas Electronics America 0.0000
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0.00000000 download yes Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) Through Hole -40°C~125°C TJ 3 SCR 600V 630mA 3mA 800mV 10A @ 60Hz 50μA Standard Recovery 1.2V 500μA 400mA
RJK0332DPB-01#J0 RJK0332DPB-01#J0 Renesas Electronics America 1.7087
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0.00000000 download Surface Mount Tape & Reel (TR) 2011 Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant Lead Free No 5 SC-100, SOT-669 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G4 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 45W 45W Tc 35A SWITCHING 0.007Ohm 30V SILICON N-Channel 4.7m Ω @ 17.5A, 10V 2.5V @ 1mA 2180pF @ 10V 14nC @ 4.5V 20V 35A Ta 30V 4.5V 10V ±20V
CR03AM-16A#BD0 CR03AM-16A#BD0 Renesas Electronics America 0.0000
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0.00000000 download yes Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) Through Hole -40°C~125°C TJ 3 SCR 800V 470mA 3mA 800mV 20A @ 60Hz 50μA Standard Recovery 1.8V 100μA 300mA
RJH60T04DPQ-A0#T0 RJH60T04DPQ-A0#T0 Renesas Electronics America 0.0000
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0.00000000 Obsolete Not Applicable RoHS Compliant TO-247-3 compliant Through Hole 150°C TJ Standard NO Insulated Gate BIP Transistors 208.3W N-CHANNEL 208.3W 100ns 1.95V @ 15V, 30A Trench 30V 600V 60A 8V 300V, 30A, 10 Ω, 15V 87nC 180A 54ns/136ns
RJH60D3DPP-M0#T2 RJH60D3DPP-M0#T2 Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2012 Active 1 (Unlimited) ROHS3 Compliant Lead Free No TO-220-3 Full Pack Through Hole 150°C TJ Standard RJH60D 3 40W 40W Single 100 ns 35A 600V 600V 2.2V @ 15V, 17A Trench 300V, 17A, 5 Ω, 15V 37nC 35ns/80ns 200μJ (on), 210μJ (off)
NP180N04TUG-E1-AY NP180N04TUG-E1-AY Renesas Electronics America 3.3849
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 Obsolete 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free No TO-263-7, D2Pak (6 Leads + Tab) Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 7 R-PSSO-G6 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.8W 54 ns 1.8W Ta 288W Tc 180A SWITCHING 40V 104 ns SILICON N-Channel 1.5m Ω @ 90A, 10V 4V @ 250μA 25700pF @ 25V 390nC @ 10V 43ns 21 ns 20V 180A Tc 40V 720A 10V ±20V
RJH60A83RDPP-M0#T2 RJH60A83RDPP-M0#T2 Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2012 Last Time Buy 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-220-3 Full Pack Through Hole 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED RJH60A 3 Insulated Gate BIP Transistors 30W 30W N-CHANNEL Single 130 ns 20A 600V 2.6V 2.6V @ 15V, 10A Trench 7.5V 300V, 10A, 5 Ω, 15V 19.7nC 31ns/54ns 230μJ (on), 160μJ (off)
RJH60V2BDPP-M0#T2 RJH60V2BDPP-M0#T2 Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2012 Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-220-3 Full Pack Through Hole 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED RJH60V 3 Insulated Gate BIP Transistors 34W 34W N-CHANNEL Single 25 ns 25A 600V 2.2V 2.2V @ 15V, 12A Trench 300V, 12A, 5 Ω, 15V 32nC 33ns/65ns 30μJ (on), 180μJ (off)
RJK6024DPH-E0#T2 RJK6024DPH-E0#T2 Renesas Electronics America 0.0000
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0.00000000 16 Weeks Obsolete 1 (Unlimited) ROHS3 Compliant
NP83P04PDG-E1-AY NP83P04PDG-E1-AY Renesas Electronics America 0.0000
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0.00000000 download Surface Mount Cut Tape (CT) 2007 Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 175°C Other Transistors Not Qualified 1.8W 1 SINGLE WITH BUILT-IN DIODE DRAIN 83A SWITCHING 0.008Ohm 40V SILICON P-Channel 5.3m Ω @ 41.5A, 10V 2.5V @ 1mA 9820pF @ 10V 200nC @ 10V 83A Tc 40V 249A 315 mJ
RJK0301DPB-02#J0 RJK0301DPB-02#J0 Renesas Electronics America 1.7375
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) yes Not For New Designs 1 (Unlimited) ROHS3 Compliant Lead Free Gold 5 SC-100, SOT-669 Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 5 11.5 ns 65W Tc 60A 58 ns N-Channel 2.8m Ω @ 30A, 10V 5000pF @ 10V 32nC @ 4.5V 4.5ns 6 ns 16V 60A Ta 30V 4.5V 10V +16V, -12V
RJK0393DPA-00#J5A RJK0393DPA-00#J5A Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 8-PowerWDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) FET General Purpose Powers Single 40W Tc 40A N-Channel 4.3m Ω @ 20A, 10V 3270pF @ 10V 21nC @ 4.5V 40A Ta 30V 4.5V 10V ±20V
RJK0703DPP-A0#T2 RJK0703DPP-A0#T2 Renesas Electronics America 0.0000
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0.00000000 download Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack Through Hole 150°C MOSFET (Metal Oxide) 25W Ta N-Channel 6.7m Ω @ 35A, 10V 4V @ 1mA 4150pF @ 10V 56nC @ 10V 70A Ta 75V 10V ±20V
H5N2522LSTL-E H5N2522LSTL-E Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant SC-83 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 75W Tc 20A SWITCHING 0.18Ohm 250V SILICON N-Channel 180m Ω @ 10A, 10V 1300pF @ 25V 47nC @ 10V 20A Ta 250V 60A 10V ±30V
NP110N055PUG(1)-E1-AY NP110N055PUG(1)-E1-AY Renesas Electronics America 0.0000
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0.00000000 Tape & Reel (TR) Obsolete Vendor Undefined ROHS3 Compliant
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