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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Frequency Height Width Mounting Type Operating Temperature Technology Operating Mode Input Type Height Seated (Max) HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Supply Voltage Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Temperature Grade Surface Mount Terminal Pitch JESD-30 Code Supply Voltage-Min (Vsup) Operating Temperature (Max) Operating Temperature (Min) Number of Channels Subcategory Qualification Status Power Supplies Supply Voltage-Max (Vsup) Max Power Dissipation Power - Max Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Collector Current-Max (IC) DC Current Gain-Min (hFE) Repetitive Peak Off-state Voltage Leakage Current (Max) Non-Repetitive Pk On-state Cur Element Configuration Power Dissipation Turn On Delay Time Max Breakdown Voltage Speed Max Repetitive Reverse Voltage (Vrrm) Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Gate-Emitter Thr Voltage-Max Test Condition Gate Charge Td (on/off) @ 25°C Switching Energy Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) Number of I/O Address Bus Width External Data Bus Width uPs/uCs/Peripheral ICs Type Clock Frequency Bit Size Has ADC DMA Channels PWM Channels DAC Channels ROM Programmability Voltage - Off State Current - On State (It (RMS)) (Max) ROM (words) RAM (bytes) CPU Family Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max) Triac Type DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic
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0.00000000 download 16 Weeks Through Hole Tube 2012 yes Active 1 (Unlimited) ROHS3 Compliant TO-3PFM, SC-93-3 Through Hole 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Single 60W Tc 30A N-Channel 235m Ω @ 15A, 10V 4100pF @ 25V 92nC @ 10V 30A Ta 600V 10V ±30V
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0.00000000 download 16 Weeks Through Hole Tape & Reel (TR) Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) Through Hole -40°C~125°C NOT SPECIFIED NOT SPECIFIED 3 Silicon Controlled Rectifiers 0.5mA 10 A 600V 3mA 630mA SCR 600V 800mV 10A @ 60Hz 100μA Sensitive Gate 1.2V 500μA 400mA
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0.00000000 download 16 Weeks Through Hole Tube 2012 yes Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-3PFM, SC-93-3 Through Hole 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED RJP60F 3 Insulated Gate BIP Transistors 45W 45W N-CHANNEL Single 80A 600V 1.8V 1.8V @ 15V, 40A Trench 400V, 30A, 5 Ω, 15V 74nC 53ns/90ns
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0.00000000 download 16 Weeks Through Hole Tube 2011 Obsolete 1 (Unlimited) ROHS3 Compliant 3 TO-247-3 Through Hole 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED 192.3W 192.3W Single 50A 1.2kV 2.4V 2.4V @ 15V, 25A 1200V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2007 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING 3 R-PSSO-G2 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.8W 28 ns 1.8W Ta 200W Tc 100A SWITCHING 0.0078Ohm 60V 275 ns SILICON P-Channel 6m Ω @ 50A, 10V 2.5V @ 1mA 15000pF @ 10V 300nC @ 10V 35ns 100 ns 20V 100A Tc 60V 300A 420 mJ 4.5V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2013 yes Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant 6-WDFN Exposed Pad Surface Mount 150°C TJ NOT SPECIFIED NOT SPECIFIED 6 Other Transistors 2.3W 2.3W 3A METAL-OXIDE SEMICONDUCTOR 2 P-Channel (Dual) 79m Ω @ 1.5A, 4.5V 473pF @ 10V 5.1nC @ 4.5V Logic Level Gate, 1.8V Drive 3A 20V
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0.00000000 download 16 Weeks Through Hole Tube 2012 Active 1 (Unlimited) ROHS3 Compliant Lead Free No TO-220-3 Full Pack Through Hole 150°C TJ Standard RJH60D 3 40W 40W Single 100 ns 35A 600V 600V 2.2V @ 15V, 17A Trench 300V, 17A, 5 Ω, 15V 37nC 35ns/80ns 200μJ (on), 210μJ (off)
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant Lead Free Gold No 5 SC-100, SOT-669 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G4 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 65W 9.4 ns 65W Tc 60A SWITCHING 0.0029Ohm 30V 61.5 ns SILICON N-Channel 2.1m Ω @ 30A, 10V 2.5V @ 1mA 6380pF @ 10V 42nC @ 4.5V 4.3ns 7.3 ns 20V 60A Ta 30V 240A 4.5V 10V ±20V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 1.5W Ta 52W Tc 30A P-Channel 4.8m Ω @ 30A, 10V 3740pF @ 10V 100nC @ 10V 30A Tc 30V 4.5V 10V ±20V
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0.00000000 download 16 Weeks Through Hole Tube 2012 Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-220-3 Full Pack Through Hole 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED RJH60V 3 Insulated Gate BIP Transistors 34W 34W N-CHANNEL Single 25 ns 25A 600V 2.2V 2.2V @ 15V, 12A Trench 300V, 12A, 5 Ω, 15V 32nC 33ns/65ns 30μJ (on), 180μJ (off)
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0.00000000 download Through Hole Tube 2009 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 SINGLE 3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 39 ns 1.8W Ta 143W Tc 82A SWITCHING 0.0042Ohm 40V 67 ns SILICON N-Channel 4.2m Ω @ 41A, 10V 4V @ 250μA 9750pF @ 25V 160nC @ 10V 102ns 13 ns 20V 82A Tc 40V 10V ±20V
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0.00000000 download Through Hole Tube 2009 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 SINGLE 3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 17 ns 1.8W Ta 115W Tc 80A SWITCHING 0.0086Ohm 60V 70 ns SILICON N-Channel 8.6m Ω @ 40A, 10V 2.5V @ 250μA 6900pF @ 25V 128nC @ 10V 13ns 7 ns 20V 80A Tc 60V 4.5V 10V ±20V
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0.00000000 download 16 Weeks Tube 2005 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-3PFM, SC-93-3 25.5mm Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e2 Tin/Copper (Sn/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 1 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 50W 17 ns 50W Tc 2A SWITCHING 150 ns SILICON N-Channel 12 Ω @ 1A, 15V 984.7pF @ 30V 20V 1.5kV 2A 2A Ta 1500V 7A 15V ±20V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 8 Other Transistors Single 16 ns 1.5W Ta 27A 196 ns P-Channel 6.2m Ω @ 27A, 10V 3130pF @ 10V 80nC @ 10V 41ns 234 ns 20V 27A Tc 30V 4.5V 10V ±20V
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0.00000000 download 16 Weeks Through Hole Tube 2012 Active 1 (Unlimited) ROHS3 Compliant 3 TO-220-3 Full Pack Through Hole -40°C~150°C TJ Standard NOT SPECIFIED NOT SPECIFIED 3 30W 30W Single 200A 430V 10V 10V @ 26V, 200A 300V, 200A, 30 Ω, 26V 50ns/100ns
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0.00000000 download 16 Weeks Through Hole Tube 2012 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 TO-247-3 Through Hole 150°C TJ Standard SINGLE RJH60F 3 Insulated Gate BIP Transistors 328.9W 328.9W 1 SINGLE WITH BUILT-IN DIODE COLLECTOR N-CHANNEL 25 ns 90A 600V 1.75V POWER CONTROL SILICON 144 ns 1.75V @ 15V, 50A 216 ns Trench 8V 400V, 30A, 5 Ω, 15V 63ns/142ns
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0.00000000 download Last Time Buy 1 (Unlimited) ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) Through Hole -40°C~110°C TJ 600V 470mA 3mA 800mV 10A @ 60Hz 100μA Standard Recovery 1.8V 300mA
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