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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases Non-rep Pk Forward Current-Max Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Collector Current-Max (IC) DC Current Gain-Min (hFE) Repetitive Peak Off-state Voltage Leakage Current (Max) Non-Repetitive Pk On-state Cur Element Configuration Power Dissipation Turn On Delay Time Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Max Repetitive Reverse Voltage (Vrrm) Diode Configuration Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type Voltage - Collector Emitter Breakdown (Max) Test Condition Gate Charge Td (on/off) @ 25°C Switching Energy Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type RMS On-state Current-Max Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max) Triac Type Critical Rate of Rise of Commutation Voltage-Min
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0.00000000 download Surface Mount Tape & Reel (TR) 2013 yes Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant 8 8-WFDFN Exposed Pad Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 8 55W Tc 30A N-Channel 8m Ω @ 15A, 10V 2400pF @ 10V 30.6nC @ 10V 30A Ta 60V 10V ±20V
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