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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
SIHD3N50D-E3 SIHD3N50D-E3 Vishay Siliconix 0.0000
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0.00000000 download 20 Weeks Surface Mount Tube 2014 Active 1 (Unlimited) 2 ROHS3 Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 FET General Purpose Powers 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 12 ns 69W Tc 3A SWITCHING 500V 11 ns SILICON N-Channel 3.2 Ω @ 2.5A, 10V 5V @ 250μA 175pF @ 100V 12nC @ 10V 9ns 13 ns 30V 3A 3A Tc 500V 5.5A 9 mJ 10V ±30V
SI6415DQ-T1-E3 SI6415DQ-T1-E3 Vishay Siliconix 1.7473
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2008 TrenchFET® yes Active 1 (Unlimited) 8 EAR99 3mm ROHS3 Compliant Lead Free Tin No 8 8-TSSOP (0.173, 4.40mm Width) Unknown 1mm 4.4mm 19mOhm Surface Mount 157.991892mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 8 1 1 Single 1.5W 16 ns -1V 1.5W Ta 6.5A 73 ns SILICON P-Channel 19m Ω @ 6.5A, 10V 1V @ 250μA (Min) 70nC @ 10V 17ns 17 ns 20V -30V 30V 30A 4.5V 10V ±20V
IRF530STRRPBF IRF530STRRPBF Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) 175°C -55°C 10.67mm ROHS3 Compliant No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm Surface Mount 1.437803g -55°C~175°C TJ MOSFET (Metal Oxide) 1 1 Single 3.7W 10 ns 160mOhm TO-263 (D2Pak) 3.7W Ta 88W Tc 14A 23 ns N-Channel 160mOhm @ 8.4A, 10V 4V @ 250μA 670pF @ 25V 26nC @ 10V 34ns 24 ns 20V 14A Tc 100V 670pF 10V ±20V 160 mΩ
IRF614STRL IRF614STRL Vishay Siliconix 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) no Active 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 TIN LEAD SINGLE GULL WING 240 30 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.1W Ta 36W Tc 2.7A SWITCHING 2Ohm 250V SILICON N-Channel 2 Ω @ 1.6A, 10V 4V @ 250μA 140pF @ 25V 8.2nC @ 10V 2.7A Tc 250V 8A 61 mJ 10V ±20V
SIHP21N60EF-GE3 SIHP21N60EF-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Through Hole Tube 2014 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 227W Tc 21A SWITCHING 0.176Ohm 600V SILICON N-Channel 176m Ω @ 11A, 10V 4V @ 250μA 2030pF @ 100V 84nC @ 10V 21A Tc 600V 53A 367 mJ 10V ±30V
SIHD690N60E-GE3 SIHD690N60E-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks E Active 1 (Unlimited) ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) D-PAK (TO-252AA) 62.5W Tc N-Channel 700mOhm @ 2A, 10V 5V @ 250μA 347pF @ 100V 12nC @ 10V 6.4A Tc 600V 10V ±30V
IRF9Z10PBF IRF9Z10PBF Vishay Siliconix 0.0000
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0.00000000 download 11 Weeks Through Hole Tube 2014 Active 1 (Unlimited) 175°C -55°C 10.41mm ROHS3 Compliant Lead Free No 3 TO-220-3 Unknown 9.01mm 4.7mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) 1 1 Single 43W 11 ns -4V 500mOhm TO-220AB 43W Tc 6.7A 10 ns P-Channel 500mOhm @ 4A, 10V 4V @ 250μA 270pF @ 25V 12nC @ 10V 63ns 31 ns 20V 6.7A Tc 60V 270pF 10V ±20V 500 mΩ
SI7997DP-T1-GE3 SI7997DP-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2015 TrenchFET® yes Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free 8 PowerPAK® SO-8 Dual No SVHC unknown 1.12mm 5.5mOhm Surface Mount 506.605978mg -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) C BEND 260 40 SI7997 8 R-XDSO-C5 Other Transistors Not Qualified 46W 2 DRAIN Dual 3.5W 15 ns -2.2V -20.8A 150°C METAL-OXIDE SEMICONDUCTOR 115 ns SILICON 2 P-Channel (Dual) 5.5m Ω @ 20A, 10V 2.2V @ 250μA 6200pF @ 15V 160nC @ 10V 40 ns 20V -30V Standard 60A 60A 30V 100A 45 mJ
SIR862DP-T1-GE3 SIR862DP-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2010 TrenchFET® yes Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free No 8 PowerPAK® SO-8 Surface Mount 506.605978mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL C BEND 260 30 8 R-XDSO-C5 1 FET General Purpose Power 1 DRAIN Single 28 ns 5.2W Ta 69W Tc 32A SWITCHING 25V 39 ns SILICON N-Channel 2.8m Ω @ 15A, 10V 2.3V @ 250μA 3800pF @ 10V 90nC @ 10V 16ns 17 ns 20V 50A 50A Tc 25V 70A 4.5V 10V ±20V
IRL620STRL IRL620STRL Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2016 Obsolete 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) D2PAK 3.1W Ta 50W Tc 5.2A N-Channel 800mOhm @ 3.1A, 10V 2V @ 250μA 360pF @ 25V 16nC @ 5V 5.2A Tc 200V 360pF 4V 10V ±10V 800 mΩ
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