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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Diameter Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mfr Mounting Type Weight Operating Temperature Technology Operating Mode Current Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Frequency Range Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Power - Max Reference Standard Voltage Number of Elements Configuration Diode Type Polarity Tolerance Case Connection Element Configuration Power Dissipation Turn On Delay Time Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Transistor Type Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Max Voltage - Isolation Voltage - Peak Reverse (Max) Resistance @ If, F Capacitance Ratio Capacitance Ratio Condition Q @ Vr, F DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Reverse Recovery Time (trr)
VN2450N3-G VN2450N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm 13Ohm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) BOTTOM NOT APPLICABLE NOT APPLICABLE 1 Not Qualified Single 1W 10 ns 1W Ta 200mA 25 ns N-Channel 13 Ω @ 400mA, 10V 4V @ 1mA 150pF @ 25V 10ns 20 ns 20V 500V 200mA Tj 4.5V 10V ±20V
VN2222LL-G-P013 VN2222LL-G-P013 Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM O-PBCY-T3 1 SINGLE WITH BUILT-IN DIODE 400mW Ta 1W Tc 230mA SWITCHING 60V SILICON N-Channel 7.5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 0.23A 230mA Tj 60V 8 pF 5V 10V ±30V
MPS4102-013S MPS4102-013S Microchip Technology 0.0000
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0.00000000 download Waffle Preliminary RoHS Compliant Switch 2 UHF|VHF|SHF|EHF
SMX0504-M1 SMX0504-M1 Microchip Technology 0.0000
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0.00000000 download Tape and Reel Active RoHS Compliant Attenuator|Switch 2 UHF|VHF|HF Single
MSCSM70TAM05TPAG MSCSM70TAM05TPAG Microchip Technology 0.0000
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0.00000000 - Module Microchip Technology Chassis Mount 273 A MOSFET 700 V 3 Phase Inverter -
UM9301 UM9301 Microchip Technology 0.0000
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0.00000000 download Unconfirmed 2.29(Max) Supplier Unconfirmed Attenuator|Switch 2 MF Single
LXP1004-23-2 LXP1004-23-2 Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology -55°C ~ 125°C PIN - 1 Pair Series Connection SOT-23-3 0.75pF @ 20V, 1MHz 10 mA 20V 600mOhm @ 10mA, 100MHz
UM4001SM-TR UM4001SM-TR Microchip Technology 0.0000
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0.00000000 download Tape and Reel Unconfirmed RoHS non-compliant Attenuator|Switch 2 HF|S Single
0912GN-300V 0912GN-300V Microchip Technology 0.0000
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ARF466BG ARF466BG Microchip Technology 0.0000
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1011GN-1600VG 1011GN-1600VG Microchip Technology 0.0000
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GCX1209-23-0/TR GCX1209-23-0/TR Microchip Technology 0.0000
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0.00000000 GCX1209 TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 4.7pF @ 4V, 1MHz 30 V 3.9 C0/C30 2000 @ 4V, 50MHz
TD9944TG-G TD9944TG-G Microchip Technology 0.0000
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0.00000000 download 5 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant Lead Free 8 LOW THRESHOLD 8-SOIC (0.154, 3.90mm Width) Surface Mount 84.99187mg -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed GULL WING 260 40 2 FET General Purpose Power Not Qualified 2 SINGLE WITH BUILT-IN DIODE 10 ns 1A SWITCHING 6Ohm METAL-OXIDE SEMICONDUCTOR 20 ns SILICON 2 N-Channel (Dual) 6 Ω @ 500mA, 10V 2V @ 1mA 125pF @ 25V 10ns 10 ns 20V 240V Standard
CDLL4135D/TR CDLL4135D/TR Microchip Technology 0.0000
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0.00000000 - - Microchip Technology - - - -
MSC050SDA120BCT MSC050SDA120BCT Microchip Technology 0.0000
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0.00000000 - TO-247-3 Microchip Technology Through Hole Silicon Carbide Schottky TO-247-3 No Recovery Time > 500mA (Io) 200 μA @ 1200 V 1.8 V @ 50 A -55°C ~ 175°C 1200 V 109A 246pF @ 400V, 1MHz 0 ns
SG2823J-883B SG2823J-883B Microchip Technology 0.0000
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0.00000000 download 14 Weeks IN PRODUCTION (Last Updated: 1 month ago) Through Hole Tube 1997 no Active 1 (Unlimited) 18 EAR99 RoHS Compliant Contains Lead Yes 18 LOGIC LEVEL COMPATIBLE CDIP not_compliant Through Hole 150°C TJ e0 TIN LEAD DUAL NOT SPECIFIED NOT SPECIFIED 18 Not Qualified MIL 8 NPN 18-CDIP 500mA 95V 95V AMPLIFIER SILICON 8 NPN Darlington 1.6V 1000 @ 350mA 2V 1.6V @ 500μA, 350mA
MPP4201-206 MPP4201-206 Microchip Technology 0.0000
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0.00000000 - 0402 (1005 Metric) Microchip Technology -55°C ~ 150°C PIN - Single 0402 0.2pF @ 10V, 1MHz 70V 2.5Ohm @ 20mA, 100MHz
KVX2162-23-0 KVX2162-23-0 Microchip Technology 0.0000
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0.00000000 download Tape and Reel Active RoHS Compliant VCO 3 Single
KVX38S2-23-0 KVX38S2-23-0 Microchip Technology 0.0000
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0.00000000 download Tape and Reel RoHS Compliant VCO 3 Single
GC4701-6LP GC4701-6LP Microchip Technology 0.0000
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0.00000000 download Tape and Reel Preliminary RoHS Compliant 6 X Single Dual Anode
MCP87018T-U/MF MCP87018T-U/MF Microchip Technology 0.0000
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0.00000000 download 3 Weeks Tape & Reel (TR) 2004 Obsolete 1 (Unlimited) EAR99 5mm ROHS3 Compliant Lead Free 8 8-PowerTDFN No SVHC not_compliant 1mm 6mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - annealed 260 40 MCP87018 YES FET General Purpose Powers Single 2.2W 6.53 ns 2.2W Ta 100A 26.35 ns N-Channel 1.9m Ω @ 25A, 10V 1.6V @ 250μA 2925pF @ 12.5V 37nC @ 4.5V 28.3ns 28.05 ns 10V 25V 1.3 V 100A Tc 3.3V 10V +10V, -8V
TN0104N8-G TN0104N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free Tin No 4 LOW THRESHOLD, LOGIC LEVEL COMPATIBLE TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FLAT 260 40 R-PSSO-F3 1 FET General Purpose Power 1 DRAIN Single 1.6W 3 ns 1.6W Tc 630mA SWITCHING 2Ohm 6 ns SILICON N-Channel 2 Ω @ 1A, 10V 1.6V @ 500μA 70pF @ 20V 7ns 7 ns 20V 40V 0.63A 630mA Tj 3V 10V ±20V
0912GN-15E 0912GN-15E Microchip Technology 0.0000
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2N6510 2N6510 Microchip Technology 0.0000
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0.00000000 - TO-204AA, TO-3 Microchip Technology Through Hole - 120 W TO-204AD (TO-3) NPN - 200 V 7 A - - -
TN0620N3-G-P014 TN0620N3-G-P014 Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM O-PBCY-T3 1 1 Single 10 ns 1W Tc 250mA SWITCHING 6Ohm 200V 20 ns SILICON N-Channel 6 Ω @ 500mA, 10V 1.6V @ 1mA 150pF @ 25V 8ns 20 ns 20V 0.25A 250mA Tj 200V 35 pF 5V 10V ±20V
VN0109N3-G VN0109N3-G Microchip Technology 0.0000
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0.00000000 download 5 Weeks Through Hole Bulk 2009 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Tin 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 BOTTOM NOT APPLICABLE NOT APPLICABLE 1 1 SINGLE WITH BUILT-IN DIODE 1W 3 ns 1W Tc 350mA SWITCHING 3Ohm 6 ns SILICON N-Channel 3 Ω @ 1A, 10V 2.4V @ 1mA 65pF @ 25V 5ns 5 ns 20V 90V 350mA Tj 8 pF 5V 10V ±20V
MIC94052BC6-TR MIC94052BC6-TR Microchip Technology 0.0000
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0.00000000 download Tape & Reel (TR) 2005 Discontinued 1 (Unlimited) 6 EAR99 Non-RoHS Compliant 6-TSSOP, SC-88, SOT-363 not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn85Pb15) DUAL GULL WING MIC94052 6 YES R-PDSO-G6 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR 270mW Ta SWITCHING 0.18Ohm 6V SILICON P-Channel 84m Ω @ 100mA, 4.5V 1.2V @ 250μA 2A 2A Ta 6V 1.8V 4.5V
VN2224N3-G VN2224N3-G Microchip Technology 0.0000
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0.00000000 download 20 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-226-3, TO-92-3 (TO-226AA) Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 1 Single 1W 6 ns 1W Tc 540mA SWITCHING 65 ns SILICON N-Channel 1.25 Ω @ 2A, 10V 3V @ 5mA 350pF @ 25V 20V 240V 0.54A 540mA Tj 5V 10V ±20V
1012GN-800V 1012GN-800V Microchip Technology 0.0000
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DN3765K4-G DN3765K4-G Microchip Technology 0.0000
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0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 2008 Active 3 (168 Hours) 2 EAR99 6.73mm ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.1mm Surface Mount 3.949996g -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) GULL WING 260 NOT SPECIFIED R-PSSO-G2 1 Not Qualified 1 DRAIN Single 2.5W 50 ns 2.5W Ta 300mA SWITCHING 8Ohm 75 ns SILICON N-Channel 8 Ω @ 150mA, 0V 825pF @ 25V 75ns 100 ns 20V 650V Depletion Mode 300mA Tj 0.5A 0V ±20V
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