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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Diameter Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Mfr Mounting Type Weight Operating Temperature Technology Operating Mode Input Type Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Frequency Range Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Ambient Temperature Range High Max Power Dissipation Number of Elements Configuration Diode Type JEDEC-95 Code Case Connection Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Vce(on) (Max) @ Vge, Ic Channel Type Continuous Collector Current Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Voltage - Peak Reverse (Max) Resistance @ If, F Capacitance Ratio Capacitance Ratio Condition Q @ Vr, F Reverse Recovery Time (trr)
UM7102B UM7102B Microchip Technology 0.0000
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0.00000000 download 5 Weeks Surface Mount Tape & Reel (TR) 2001 Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Tin No 3 LOW THRESHOLD TO-236-3, SC-59, SOT-23-3 950μm 1.3mm Surface Mount 1.437803g -55°C~150°C MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 1 1 Single 360mW 4 ns 360mW Ta 160mA SWITCHING 6Ohm 5 ns SILICON P-Channel 6 Ω @ 500mA, 10V 2V @ 1mA 60pF @ 25V 4ns 4 ns 20V -40V 160mA Tj 40V 4.5V 10V ±20V
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0.00000000 download 15 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 EAR99 2.92mm ROHS3 Compliant Tin No 3 LOW THRESHOLD TO-236-3, SC-59, SOT-23-3 930μm 1.3mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 1 Other Transistors 1 Single 360mW 10 ns 360mW Ta 120mA SWITCHING 15 ns SILICON P-Channel 10 Ω @ 200mA, 10V 2.4V @ 1mA 60pF @ 25V 15ns 15 ns 20V -60V 120mA Tj 60V 4.5V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) 125°C -25°C ROHS3 Compliant SC-74A, SOT-753 Surface Mount -25°C~125°C TJ SOT-23-5 2 P-Channel (Dual) 180Ohm @ 20mA, 7V 2.4V @ 1mA 10.8pF @ 25V Standard 300V 10.8pF 180 Ω
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 2.92mm ROHS3 Compliant Lead Free Tin No 3 HIGH INPUT IMPEDANCE TO-236-3, SC-59, SOT-23-3 1.12mm 1.3mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 1 FET General Purpose Power 150°C 1 Single 360mW 20 ns 360mW Ta 115mA SWITCHING 20 ns SILICON N-Channel 7.5 Ω @ 500mA, 10V 2.5V @ 250μA 50pF @ 25V 30V 60V 115mA Tj 5 pF 5V 10V ±30V
MSCSM70HM05CAG MSCSM70HM05CAG Microchip Technology 0.0000
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0.00000000 - Microchip Technology
TC6215TG-G TC6215TG-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2008 Active 1 (Unlimited) 8 EAR99 4.9mm ROHS3 Compliant 8 8-SOIC (0.154, 3.90mm Width) 1.65mm 3.8mm Surface Mount 84.99187mg -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed GULL WING 260 40 TC621 2 Not Qualified 2 N-CHANNEL AND P-CHANNEL Dual 2.5 ns 36A SWITCHING 5Ohm METAL-OXIDE SEMICONDUCTOR 17.2 ns SILICON N and P-Channel 4 Ω @ 2A, 10V 2V @ 1mA 120pF @ 25V 2.3ns 11.3 ns 20V -150V Standard 150V
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant 3 HIGH INPUT IMPEDANCE TO-236-3, SC-59, SOT-23-3 950μm 1.3mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - annealed DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 Not Qualified 1 Single 360mW 90 ns 360mW Ta 13mA SWITCHING 100 ns SILICON N-Channel 1000 Ω @ 500μA, 0V 10pF @ 25V 450ns 450 ns 20V 500V Depletion Mode 13mA Tj 0V ±20V
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Tin 3 FAST SWITCHING TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FLAT 260 40 1 FET General Purpose Power Not Qualified 1 DRAIN Single 1.6W 10 ns 1.6W Ta 250mA SWITCHING 25 ns SILICON N-Channel 13 Ω @ 400mA, 10V 4V @ 1mA 150pF @ 25V 10ns 10 ns 20V 500V 0.25A 250mA Tj 0.75A 4.5V 10V ±20V
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0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM NOT APPLICABLE NOT APPLICABLE 1 Not Qualified 1 Single 740mW 4 ns 740mW Ta -250mA SWITCHING 6Ohm 5 ns SILICON P-Channel 6 Ω @ 500mA, 10V 2V @ 1mA 60pF @ 25V 4ns 4 ns 20V -40V 175mA Tj 40V 4.5V 10V ±20V
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0.00000000 download 5 Weeks Surface Mount Tape & Reel (TR) 2005 Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant 3 LOW THRESHOLD TO-236-3, SC-59, SOT-23-3 950μm 1.3mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 1 FET General Purpose Power Not Qualified 1 Single 360mW 4 ns 360mW Tc 134mA SWITCHING 7 ns SILICON N-Channel 15 Ω @ 120mA, 4.5V 2V @ 1mA 50pF @ 25V 2ns 2 ns 20V 240V 134mA Tj 5 pF 3V 4.5V ±20V
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0.00000000 download 3 Weeks Tape & Reel (TR) 2004 Obsolete 1 (Unlimited) EAR99 5mm ROHS3 Compliant Lead Free 8 8-PowerTDFN No SVHC not_compliant 1mm 6mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - annealed 260 40 MCP87018 YES FET General Purpose Powers Single 2.2W 6.53 ns 2.2W Ta 100A 26.35 ns N-Channel 1.9m Ω @ 25A, 10V 1.6V @ 250μA 2925pF @ 12.5V 37nC @ 4.5V 28.3ns 28.05 ns 10V 25V 1.3 V 100A Tc 3.3V 10V +10V, -8V
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Lead Free 3 LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD TO-236-3, SC-59, SOT-23-3 950μm 1.3mm Surface Mount 1.437803g -55°C~150°C TA MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 1 FET General Purpose Power Not Qualified 1 Single 360mW 20 ns 360mW Ta 150mA SWITCHING 7Ohm 25 ns SILICON N-Channel 7 Ω @ 1A, 10V 2V @ 1mA 110pF @ 25V 15ns 15 ns 20V 250V 150mA Ta 4.5V 10V ±20V
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