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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration Diode Type Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Voltage - Peak Reverse (Max) Capacitance Ratio Condition Q @ Vr, F Reverse Recovery Time (trr)
DN2540N8-G DN2540N8-G Microchip Technology 0.0000
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0.00000000 download 5 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free Tin 3 LOW THRESHOLD TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 FLAT 260 40 1 FET General Purpose Power Not Qualified 1 DRAIN Single 1.6W 10 ns 1.6W Tc 170mA SWITCHING 15 ns SILICON N-Channel 25 Ω @ 120mA, 0V 300pF @ 25V 15ns 15 ns 20V 400V Depletion Mode 170mA Tj 0.5A 0V ±20V
APT60D100SG/TR APT60D100SG/TR Microchip Technology 0.0000
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0.00000000 - TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Microchip Technology Surface Mount Standard D3PAK Fast Recovery =< 500ns, > 200mA (Io) 250 μA @ 1 kV 2.5 V @ 60 A -55°C ~ 175°C 1000 V 60A - 280 ns
MSC050SDA170B MSC050SDA170B Microchip Technology 0.0000
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0.00000000 - TO-247-3 Microchip Technology Through Hole Silicon Carbide Schottky TO-247-3 No Recovery Time > 500mA (Io) 200 μA @ 1700 V 1.8 V @ 50 A -55°C ~ 175°C 1700 V 136A 4450pF @ 1V, 1MHz 0 ns
MIC94053YC6-TR MIC94053YC6-TR Microchip Technology 0.0000
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0.00000000 download 7 Weeks Surface Mount Tape & Reel (TR) 2005 Active 1 (Unlimited) 150°C -40°C 2.2mm ROHS3 Compliant Lead Free -2A No 6 6-TSSOP, SC-88, SOT-363 No SVHC 1mm 1.35mm Surface Mount -40°C~150°C TJ -6V MOSFET (Metal Oxide) MIC94053 1 Single 270mW 15 ns -1.2V 180mOhm SC-70-6 270mW Ta 2A 60 ns P-Channel 84mOhm @ 100mA, 4.5V 1.2V @ 250μA 6V 2A Ta 6V 1.8V 4.5V 6V 84 mΩ
MSCSM70HM05CAG MSCSM70HM05CAG Microchip Technology 0.0000
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0.00000000 - Microchip Technology
1N5416/TR 1N5416/TR Microchip Technology 0.0000
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0.00000000 - B, Axial Microchip Technology Through Hole Standard - Fast Recovery =< 500ns, > 200mA (Io) 1 μA @ 100 V 1.5 V @ 9 A -65°C ~ 175°C 100 V 3A - 150 ns
KVX3201-23-0 KVX3201-23-0 Microchip Technology 0.0000
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0.00000000 * Microchip Technology
KVX2301-23-0 KVX2301-23-0 Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 120pF @ 4V, 1MHz 22 V - 80 @ 4V, 50MHz
JANTX1N5416/TR JANTX1N5416/TR Microchip Technology 0.0000
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0.00000000 Military, MIL-PRF-19500/411 B, Axial Microchip Technology Through Hole Standard - Fast Recovery =< 500ns, > 200mA (Io) 1 μA @ 100 V 1.5 V @ 9 A -65°C ~ 175°C 100 V 3A - 150 ns
UM7201D UM7201D Microchip Technology 0.0000
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0.00000000 download RoHS non-compliant Attenuator|Switch 2 Single
TN0606N3-G TN0606N3-G Microchip Technology 0.0000
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0.00000000 download 20 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed BOTTOM 1 FET General Purpose Power 1 Single 1W 6 ns 1W Tc 500mA SWITCHING 2Ohm 16 ns SILICON N-Channel 1.5 Ω @ 750mA, 10V 2V @ 1mA 150pF @ 25V 14ns 16 ns 20V 60V 0.5A 500mA Tj 3V 10V ±20V
TP2640LG-G TP2640LG-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 8 EAR99 4.9mm ROHS3 Compliant 8 LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) 1.65mm 3.9mm Surface Mount 84.99187mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 1 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE 1.3W 10 ns 740mW Ta -210mA SWITCHING 60 ns SILICON P-Channel 15 Ω @ 300mA, 10V 2V @ 1mA 300pF @ 25V 15ns 15 ns 20V -400V 86mA Tj 400V 2.5V 10V ±20V
VN0104N3-G VN0104N3-G Microchip Technology 0.0000
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0.00000000 download 2 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) Through Hole 219.992299mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 FET General Purpose Power 1 Single 1W 3 ns 1W Tc 350mA SWITCHING 3Ohm 6 ns SILICON N-Channel 3 Ω @ 1A, 10V 2.4V @ 1mA 65pF @ 25V 20V 40V 0.5A 350mA Tj 8 pF 5V 10V ±20V
VN0300L-G-P002 VN0300L-G-P002 Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED 1 1 Single 1W Tc 640mA SWITCHING SILICON N-Channel 1.2 Ω @ 1A, 10V 2.5V @ 1mA 190pF @ 20V 30V 30V 0.64A 640mA Tj 50 pF 5V 10V ±30V
TN0604N3-G TN0604N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 FET General Purpose Power 1 Single 740mW 10 ns 740mW Ta 700mA SWITCHING 0.75Ohm 25 ns SILICON N-Channel 750m Ω @ 1.5A, 10V 1.6V @ 1mA 190pF @ 20V 6ns 20 ns 20V 40V 0.7A 700mA Tj 50 pF 5V 10V ±20V
JAN1N5190/TR JAN1N5190/TR Microchip Technology 0.0000
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0.00000000 Military, MIL-PRF-19500/420 B, Axial Microchip Technology Through Hole Standard Axial Fast Recovery =< 500ns, > 200mA (Io) 2 μA @ 600 V 1.5 V @ 9 A -65°C ~ 175°C 600 V 3A - 400 ns
VRF154FL VRF154FL Microchip Technology 0.0000
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0.00000000
TN0604N3-G-P013 TN0604N3-G-P013 Microchip Technology 1.3377
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0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM O-PBCY-T3 1 1 Single 10 ns 740mW Ta 700mA SWITCHING 0.75Ohm 25 ns SILICON N-Channel 750m Ω @ 1.5A, 10V 1.6V @ 1mA 190pF @ 20V 6ns 20 ns 20V 40V 0.7A 700mA Tj 50 pF 5V 10V ±20V
MCP87055T-U/LC MCP87055T-U/LC Microchip Technology 0.0000
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0.00000000 download 15 Weeks Tape & Reel (TR) 2004 Obsolete 1 (Unlimited) EAR99 3.3mm ROHS3 Compliant Lead Free 8 8-PowerTDFN No SVHC not_compliant 1mm 3.3mm 7MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - annealed 260 40 MCP87055 YES FET General Purpose Power Single 1.8W 4.5 ns 1.8W Ta 60A 9 ns N-Channel 6m Ω @ 20A, 10V 1.7V @ 250μA 890pF @ 12.5V 14nC @ 4.5V 11ns 4.6 ns 10V 25V 1.35 V 60A Tc 4.5V 10V +10V, -8V
MIC94051YM4-TR MIC94051YM4-TR Microchip Technology 0.0000
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0.00000000 download 15 Weeks Surface Mount Tape & Reel (TR) 2006 SymFET™ Active 1 (Unlimited) 150°C -40°C ROHS3 Compliant Lead Free -1.8A 4 TO-253-4, TO-253AA Surface Mount -40°C~150°C TJ -6V MOSFET (Metal Oxide) 1 568mW SOT-143 568mW Ta 1.8A P-Channel 160mOhm @ 100mA, 4.5V 1.2V @ 250μA 600pF @ 5.5V 6V 1.8A Ta 6V 600pF 1.8V 4.5V 6V 160 mΩ
VN0808L-G VN0808L-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2009 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 1 Single 1W 1W Tc 300mA SWITCHING 4Ohm SILICON N-Channel 4 Ω @ 1A, 10V 2V @ 1mA 50pF @ 25V 30V 80V 300mA Tj 10V ±30V
DN2530N8-G DN2530N8-G Microchip Technology 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free Tin No 3 TO-243AA No SVHC 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 FLAT 260 40 1 FET General Purpose Power 1 DRAIN Single 1.6W 10 ns 1.6W Ta 200mA SWITCHING 15 ns SILICON N-Channel 12 Ω @ 150mA, 0V 300pF @ 25V 15ns 15 ns 20V 300V Depletion Mode 0.2A 200mA Tj 5 pF 0V ±20V
LND150N3-G-P003 LND150N3-G-P003 Microchip Technology 0.0000
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0.00000000 download 8 Weeks Through Hole Tape & Reel (TR) 2014 yes Active 1 (Unlimited) 3 5.21mm ROHS3 Compliant Tin 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) BOTTOM 1 1 Single 90 ns 740mW Ta 30mA SWITCHING 100 ns SILICON N-Channel 1000 Ω @ 500μA, 0V 10pF @ 25V 450ns 1.3 μs 20V 500V Depletion Mode 30mA Tj 0V ±20V
TP0606N3-G-P003 TP0606N3-G-P003 Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2011 yes Active 1 (Unlimited) 3 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM 1 1 Single 10 ns 1W Tc 320mA SWITCHING 20 ns SILICON P-Channel 3.5 Ω @ 750mA, 10V 2.4V @ 1mA 150pF @ 25V 15ns 15 ns 20V -60V 320mA Tj 60V 5V 10V ±20V
MIC94031BM4 TR MIC94031BM4 TR Microchip Technology 0.0000
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0.00000000 download Tape & Reel (TR) 2006 TinyFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-253-4, TO-253AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) MIC94031 SOT-143 568mW Ta P-Channel 450mOhm @ 100mA, 10V 1.4V @ 250μA 100pF @ 12V 1A Ta 16V 2.7V 10V 16V
TP2104N3-G-P003 TP2104N3-G-P003 Microchip Technology 0.8800
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM 1 1 Single 4 ns 740mW Ta 175mA SWITCHING 6Ohm 5 ns SILICON P-Channel 6 Ω @ 500mA, 10V 2V @ 1mA 60pF @ 25V 4ns 5 ns 20V -40V 175mA Tj 40V 4.5V 10V ±20V
TN2124K1-G TN2124K1-G Microchip Technology 0.0000
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0.00000000 download 5 Weeks Surface Mount Tape & Reel (TR) 2005 Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant 3 LOW THRESHOLD TO-236-3, SC-59, SOT-23-3 950μm 1.3mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 1 FET General Purpose Power Not Qualified 1 Single 360mW 4 ns 360mW Tc 134mA SWITCHING 7 ns SILICON N-Channel 15 Ω @ 120mA, 4.5V 2V @ 1mA 50pF @ 25V 2ns 2 ns 20V 240V 134mA Tj 5 pF 3V 4.5V ±20V
TP5322K1-G TP5322K1-G Microchip Technology 0.0000
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0.00000000 download 5 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant 3 LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 950μm 1.3mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 1 Not Qualified 1 Single 360mW 10 ns 360mW Ta 120mA SWITCHING 20 ns SILICON P-Channel 12 Ω @ 200mA, 10V 2.4V @ 1mA 110pF @ 25V 15ns 15 ns 20V -220V 120mA Tj 220V 20 pF 4.5V 10V ±20V
TP2520N8-G TP2520N8-G Microchip Technology 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free Tin No 4 LOGIC LEVEL COMPATIBLE, LOW THRESHOLD TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FLAT 260 40 R-PSSO-F3 1 Other Transistors 1 DRAIN Single 1.6W 10 ns 1.6W Ta 260mA SWITCHING 20 ns SILICON P-Channel 12 Ω @ 200mA, 10V 2.4V @ 1mA 125pF @ 25V 15ns 15 ns 20V -200V 0.26A 260mA Tj 200V 2A 4.5V 10V ±20V
VP2450N3-G VP2450N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2007 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM WIRE 1 1 Single 1W 10 ns 740mW Ta 100mA SWITCHING 45 ns SILICON P-Channel 30 Ω @ 100mA, 10V 3.5V @ 1mA 190pF @ 25V 25ns 25 ns 20V -500V 100mA Tj 500V 20 pF 4.5V 10V ±20V
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