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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Diameter Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Current Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Voltage Number of Elements Configuration Diode Type Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Max Voltage - Peak Reverse (Max) Resistance @ If, F Capacitance Ratio Capacitance Ratio Condition Q @ Vr, F Reverse Recovery Time (trr)
MPV21004-206/TR MPV21004-206/TR Microchip Technology 0.0000
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0.00000000 - Microchip Technology
DN2530N3-G DN2530N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free No 3 TO-226-3, TO-92-3 (TO-226AA) No SVHC 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) BOTTOM WIRE 1 FET General Purpose Power 1 Single 740mW 10 ns 740mW Ta 175mA SWITCHING 15 ns SILICON N-Channel 12 Ω @ 150mA, 0V 300pF @ 25V 15ns 15 ns 20V 300V Depletion Mode 175mA Tj 5 pF 0V ±20V
TN2435N8-G TN2435N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant 4 LOGIC LEVEL COMPATIBLE TO-243AA 1.6mm 2.6mm 10Ohm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) FLAT 260 40 R-PSSO-F3 1 Not Qualified 1 DRAIN Single 1.6W 5 ns 1.6W Ta 365mA SWITCHING 28 ns SILICON N-Channel 6 Ω @ 750mA, 10V 2.5V @ 1mA 200pF @ 25V 10ns 10 ns 20V 350V 0.365A 365mA Tj 3V 10V ±20V
KVX2001-23-0 KVX2001-23-0 Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 22pF @ 4V, 1MHz 22 V - 160 @ 4V, 50MHz
GMP4212-GM1 GMP4212-GM1 Microchip Technology 0.0000
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0.00000000 GIGAMITE? 0805 (2012 Metric) Microchip Technology -55°C ~ 125°C PIN - Single 0805 0.25pF @ 10V, 1MHz 100V 1.5Ohm @ 20mA, 100MHz
1214GN-50EQP-TS 1214GN-50EQP-TS Microchip Technology 0.0000
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0.00000000
GCX1208-23-4 GCX1208-23-4 Microchip Technology 0.0000
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0.00000000 GCX1208 TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C 1 Pair Common Cathode SOT-23-3 3.9pF @ 4V, 1MHz 30 V 3.9 C0/C30 2500 @ 4V, 50MHz
MML4401-GM2/TR MML4401-GM2/TR Microchip Technology 0.0000
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0.00000000 MML4400 2-SMD, No Lead Microchip Technology -55°C ~ 150°C PIN - Single 2-SMD 1.5pF @ 0V, 1MHz 75V 2.5Ohm @ 100mA, 100MHz
KVX3901A-23-4 KVX3901A-23-4 Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C 1 Pair Common Cathode SOT-23-3 32pF @ 3V, 1MHz 27 V - 500 @ 4V, 50MHz
UM7102B UM7102B Microchip Technology 0.0000
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0.00000000 download Active 2.28(Max) RoHS non-compliant Switch|Attenuator 2 Single
DN3545N3-G DN3545N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2010 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) No SVHC 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) BOTTOM WIRE NOT APPLICABLE NOT APPLICABLE 1 FET General Purpose Power Not Qualified 1 Single 740mW 20 ns 740mW Ta 136mA SWITCHING 30 ns SILICON N-Channel 20 Ω @ 150mA, 0V 360pF @ 25V 30ns 30 ns 20V 450V Depletion Mode 450V 0V ±20V
MMP4405-GM2/TR MMP4405-GM2/TR Microchip Technology 0.0000
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0.00000000 MMP4400 0805 (2012 Metric) Microchip Technology -55°C ~ 150°C PIN - Single 0805 0.6pF @ 50V, 1MHz 1000V 750mOhm @ 100mA, 100MHz
VP0106N3-G VP0106N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2011 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 1 Single 740mW 4 ns 1W Tc 250mA SWITCHING 8Ohm 8 ns SILICON P-Channel 8 Ω @ 500mA, 10V 3.5V @ 1mA 60pF @ 25V 5ns 4 ns 20V -60V 0.25A 250mA Tj 60V 8 pF 5V 10V ±20V
GMP4201-GM1/TR GMP4201-GM1/TR Microchip Technology 0.0000
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0.00000000 GIGAMITE? 0805 (2012 Metric) Microchip Technology -55°C ~ 125°C PIN - Single 0805 0.18pF @ 10V, 1MHz 75V 1.2Ohm @ 100mA, 100MHz
KVX1501-23-0/TR KVX1501-23-0/TR Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 10.6pF @ 10V, 1MHz 12 V - 50 @ 2V, 10MHz
MPS2R11-608 MPS2R11-608 Microchip Technology 0.0000
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0.00000000 - 0402 (1005 Metric) Microchip Technology -65°C ~ 125°C PIN - Single 0402 - 200 mA 150V -
MCP87090T-U/LC MCP87090T-U/LC Microchip Technology 0.0000
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0.00000000 download 11 Weeks Tape & Reel (TR) 2008 Obsolete 1 (Unlimited) EAR99 3.3mm ROHS3 Compliant Lead Free 8 8-PowerTDFN No SVHC not_compliant 1mm 3.3mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - annealed 260 40 MCP87090 YES FET General Purpose Powers Single 1.8W 2.5 ns 1.8W Ta 48A 5.3 ns N-Channel 10.5m Ω @ 10V 1.7V @ 250μA 580pF @ 12.5V 10nC @ 4.5V 9.3ns 2.9 ns 10V 25V 1.35 V 50A 48A Tc 4.5V 10V +10V, -8V
TN2510N8-G TN2510N8-G Microchip Technology 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2008 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free Tin No 4 LOGIC LEVEL COMPATIBLE, LOW THRESHOLD TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FLAT 260 40 R-PSSO-F3 1 FET General Purpose Power 1 DRAIN Single 1.6W 10 ns 1.6W Ta 730mA SWITCHING 2Ohm 20 ns SILICON N-Channel 1.5 Ω @ 750mA, 10V 2V @ 1mA 125pF @ 25V 10ns 10 ns 20V 100V 0.73A 730mA Tj 5A 3V 10V ±20V
MSC030SDA070BCT MSC030SDA070BCT Microchip Technology 0.0000
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0.00000000 - TO-247-3 Microchip Technology Through Hole Silicon Carbide Schottky TO-247-3 No Recovery Time > 500mA (Io) 200 μA @ 700 V 1.8 V @ 30 A -55°C ~ 175°C 700 V 60A 1200pF @ 1V, 1MHz 0 ns
GCX1209-23-0 GCX1209-23-0 Microchip Technology 0.0000
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0.00000000 GCX1209 TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 4.7pF @ 4V, 1MHz 30 V 3.9 C0/C30 2000 @ 4V, 50MHz
TN2504N8-G TN2504N8-G Microchip Technology 0.0000
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0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant 4 LOGIC LEVEL COMPATIBLE TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) FLAT 260 40 R-PSSO-F3 1 Not Qualified 1 DRAIN Single 1.6W 10 ns 1.6W Tc 890mA SWITCHING 1Ohm 25 ns SILICON N-Channel 1 Ω @ 1.5A, 10V 1.6V @ 1mA 125pF @ 20V 10ns 10 ns 20V 40V 0.89A 890mA Tj 5V 10V ±20V
DN2540N3-G-P003 DN2540N3-G-P003 Microchip Technology 0.0000
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0.00000000 download 5 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) BOTTOM O-PBCY-T3 1 1 Single 10 ns 1W Tc 120mA SWITCHING 15 ns SILICON N-Channel 25 Ω @ 120mA, 0V 300pF @ 25V 15ns 20 ns 20V Depletion Mode 120mA Tj 400V 5 pF 0V ±20V
1N5418E3/TR 1N5418E3/TR Microchip Technology 0.0000
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0.00000000 - B, Axial Microchip Technology Through Hole Standard B, Axial Fast Recovery =< 500ns, > 200mA (Io) 1 μA @ 400 V 1.5 V @ 9 A -65°C ~ 175°C 400 V 3A - 150 ns
MIC94053YC6-TR MIC94053YC6-TR Microchip Technology 0.0000
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0.00000000 download 7 Weeks Surface Mount Tape & Reel (TR) 2005 Active 1 (Unlimited) 150°C -40°C 2.2mm ROHS3 Compliant Lead Free -2A No 6 6-TSSOP, SC-88, SOT-363 No SVHC 1mm 1.35mm Surface Mount -40°C~150°C TJ -6V MOSFET (Metal Oxide) MIC94053 1 Single 270mW 15 ns -1.2V 180mOhm SC-70-6 270mW Ta 2A 60 ns P-Channel 84mOhm @ 100mA, 4.5V 1.2V @ 250μA 6V 2A Ta 6V 1.8V 4.5V 6V 84 mΩ
0912GN-100LV 0912GN-100LV Microchip Technology 0.0000
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0.00000000
KVX2301-23-0 KVX2301-23-0 Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 120pF @ 4V, 1MHz 22 V - 80 @ 4V, 50MHz
TP5322N8-G TP5322N8-G Microchip Technology 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant 4 LOGIC LEVEL COMPATIBLE TO-243AA 1.6mm 2.6mm 12Ohm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) FLAT 260 40 R-PSSO-F3 1 Not Qualified 1 DRAIN Single 1.6W 10 ns 1.6W Ta -260mA SWITCHING 20 ns SILICON P-Channel 12 Ω @ 200mA, 10V 2.4V @ 1mA 110pF @ 25V 15ns 15 ns 20V -220V 0.26A 260mA Tj 220V 0.9A 4.5V 10V ±20V
VN2410L-G VN2410L-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2005 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Tin 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.334mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 2A e3 BOTTOM NOT APPLICABLE NOT APPLICABLE 1 Not Qualified 240V 1 Single 1W 8 ns 1W Tc 190mA SWITCHING 23 ns SILICON N-Channel 10 Ω @ 500mA, 10V 2V @ 1mA 125pF @ 25V 8ns 24 ns 20V 240V 190mA Tj 20 pF 2.5V 10V ±20V
UM7201D UM7201D Microchip Technology 0.0000
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0.00000000 download RoHS non-compliant Attenuator|Switch 2 Single
TN2106N3-G TN2106N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM NOT APPLICABLE NOT APPLICABLE 1 FET General Purpose Power Not Qualified 1 Single 740mW 3 ns 740mW Tc 300mA SWITCHING 6 ns SILICON N-Channel 2.5 Ω @ 500mA, 10V 2V @ 1mA 50pF @ 25V 5ns 5 ns 20V 60V 300mA Tj 65 pF 4.5V 10V ±20V
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