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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Mfr Mounting Type Weight Operating Temperature Technology Operating Mode Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Frequency Range Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration Diode Type Polarity Case Connection Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Transistor Type Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Turn Off Time-Max (toff) Collector Emitter Saturation Voltage Current - Max Voltage - Off State Voltage - Peak Reverse (Max) Resistance @ If, F Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Reverse Recovery Time (trr)
DN3135K1-G DN3135K1-G Microchip Technology 0.0000
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0.00000000 download 17 Weeks Surface Mount Tape & Reel (TR) 2010 Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Lead Free 3 LOW THRESHOLD TO-236-3, SC-59, SOT-23-3 No SVHC 950μm 1.3mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) DUAL GULL WING 260 40 1 FET General Purpose Power Not Qualified 1 Single 360mW 10 ns 360mW Ta 72mA SWITCHING 15 ns SILICON N-Channel 35 Ω @ 150mA, 0V 120pF @ 25V 15ns 15 ns 20V 350V Depletion Mode 0.072A 72mA Tj 0V ±20V
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) FLAT 260 40 R-PSSO-F3 1 FET General Purpose Power Not Qualified 1 DRAIN Single 1.6W 20 ns 1.6W Ta 230mA SWITCHING 25 ns SILICON N-Channel 15 Ω @ 200mA, 10V 2V @ 1mA 110pF @ 25V 15ns 15 ns 20V 350V 230mA Tj 3V 10V ±20V
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0.00000000 download 11 Weeks Tape & Reel (TR) 2008 Obsolete 1 (Unlimited) EAR99 3.3mm ROHS3 Compliant Lead Free 8 8-PowerTDFN No SVHC not_compliant 1mm 3.3mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - annealed 260 40 MCP87090 YES FET General Purpose Powers Single 1.8W 2.5 ns 1.8W Ta 48A 5.3 ns N-Channel 10.5m Ω @ 10V 1.7V @ 250μA 580pF @ 12.5V 10nC @ 4.5V 9.3ns 2.9 ns 10V 25V 1.35 V 50A 48A Tc 4.5V 10V +10V, -8V
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 5 SC-74A, SOT-753 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) DUAL GULL WING 260 40 1 SINGLE WITH BUILT-IN DIODE 490mW 490mW Ta 200mA SWITCHING 6Ohm SILICON N-Channel 6 Ω @ 200mA, 0V 150pF @ 25V 20V Depletion Mode 0.2A 200mA Tj 90V 0V ±20V
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2008 Active 1 (Unlimited) 8 EAR99 4.9mm ROHS3 Compliant 8 8-SOIC (0.154, 3.90mm Width) 1.65mm 3.8mm Surface Mount 84.99187mg -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed GULL WING 260 40 TC621 2 Not Qualified 2 N-CHANNEL AND P-CHANNEL Dual 2.5 ns 36A SWITCHING 5Ohm METAL-OXIDE SEMICONDUCTOR 17.2 ns SILICON N and P-Channel 4 Ω @ 2A, 10V 2V @ 1mA 120pF @ 25V 2.3ns 11.3 ns 20V -150V Standard 150V
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0.00000000 - TO-206AA, TO-18-3 Metal Can Microchip Technology Through Hole 0°C ~ 125°C TO-18 (TO-206AA) 100 V 5 mA 750 mV - 200 μA Standard Recovery 1.5 V 100 nA
JANTX2N2329S JANTX2N2329S Microchip Technology 0.0000
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0.00000000 Military, MIL-PRF-19500/276 TO-205AD, TO-39-3 Metal Can Microchip Technology Through Hole -65°C ~ 125°C TO-39 400 V 2 mA 800 mV 15A @ 60Hz 200 μA Standard Recovery 10 μA 220 mA
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2008 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free Tin No 4 LOGIC LEVEL COMPATIBLE, LOW THRESHOLD TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FLAT 260 40 R-PSSO-F3 1 FET General Purpose Power 1 DRAIN Single 1.6W 10 ns 1.6W Ta 730mA SWITCHING 2Ohm 20 ns SILICON N-Channel 1.5 Ω @ 750mA, 10V 2V @ 1mA 125pF @ 25V 10ns 10 ns 20V 100V 0.73A 730mA Tj 5A 3V 10V ±20V
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free 4 HIGH INPUT IMPEDANCE TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed FLAT 260 40 R-PSSO-F3 1 Not Qualified 1 DRAIN Single 1.6W 10 ns 1.6W Ta 1.5A SWITCHING 0.3Ohm 25 ns SILICON N-Channel 300m Ω @ 1.5A, 10V 2.4V @ 10mA 300pF @ 25V 15ns 15 ns 20V 50V 1.5A Tj 8A 30 pF 4.5V 10V ±20V 50ns
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