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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mfr Mounting Type Weight Operating Temperature Technology Operating Mode Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Frequency Range Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Ambient Temperature Range High Number of Elements Configuration Diode Type Case Connection Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Turn Off Time-Max (toff) Voltage - Off State Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max) Reverse Recovery Time (trr)
TP0610T-G TP0610T-G Microchip Technology 0.0000
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0.00000000 download 15 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 EAR99 2.92mm ROHS3 Compliant Tin No 3 LOW THRESHOLD TO-236-3, SC-59, SOT-23-3 930μm 1.3mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 1 Other Transistors 1 Single 360mW 10 ns 360mW Ta 120mA SWITCHING 15 ns SILICON P-Channel 10 Ω @ 200mA, 10V 2.4V @ 1mA 60pF @ 25V 15ns 15 ns 20V -60V 120mA Tj 60V 4.5V 10V ±20V
MS8151-P2613 MS8151-P2613 Microchip Technology 0.0000
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0.00000000 download Waffle Active RoHS Compliant Schottky Diode 2
LND01K1-G LND01K1-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free 5 SC-74A, SOT-753 Surface Mount 29.993795mg -25°C~125°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) DUAL GULL WING 260 40 1 FET General Purpose Power 1 Single 360mW 3.8 ns 360mW Ta 330mA SWITCHING 1 ns SILICON N-Channel 1.4 Ω @ 100mA, 0V 46pF @ 5V 11ns 6.4 ns 600mV 9V Depletion Mode 0.33A 330mA Tj 0V +0.6V, -12V
UM4001D UM4001D Microchip Technology 0.0000
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0.00000000 download Unconfirmed RoHS non-compliant Attenuator|Switch 2 HF|S Single
MSCSM70HM05CAG MSCSM70HM05CAG Microchip Technology 0.0000
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0.00000000 - Microchip Technology
APT75DQ120SG APT75DQ120SG Microchip Technology 0.0000
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0.00000000 download Tube Active RoHS Compliant Switching Diode 3 Single
VN2110K1-G VN2110K1-G Microchip Technology 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2001 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Tin No 3 HIGH INPUT IMPEDANCE TO-236-3, SC-59, SOT-23-3 Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 1 1 Single 360mW 3 ns 360mW Tc 200mA SWITCHING 4Ohm 6 ns SILICON N-Channel 4 Ω @ 500mA, 10V 2.4V @ 1mA 50pF @ 25V 5ns 5 ns 20V 100V 0.2A 200mA Tj 5 pF 5V 10V ±20V
0912GN-650V 0912GN-650V Microchip Technology 0.0000
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TC6215TG-G TC6215TG-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2008 Active 1 (Unlimited) 8 EAR99 4.9mm ROHS3 Compliant 8 8-SOIC (0.154, 3.90mm Width) 1.65mm 3.8mm Surface Mount 84.99187mg -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed GULL WING 260 40 TC621 2 Not Qualified 2 N-CHANNEL AND P-CHANNEL Dual 2.5 ns 36A SWITCHING 5Ohm METAL-OXIDE SEMICONDUCTOR 17.2 ns SILICON N and P-Channel 4 Ω @ 2A, 10V 2V @ 1mA 120pF @ 25V 2.3ns 11.3 ns 20V -150V Standard 150V
VN0106N3-G-P003 VN0106N3-G-P003 Microchip Technology 0.7406
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM 1 1 Single 1W 3 ns 1W Tc 350mA SWITCHING 3Ohm 60V 6 ns SILICON N-Channel 3 Ω @ 1A, 10V 2.4V @ 1mA 65pF @ 25V 5ns 5 ns 20V 350mA Tj 60V 8 pF 5V 10V ±20V
MCP87022T-U/MF MCP87022T-U/MF Microchip Technology 0.0000
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0.00000000 download 11 Weeks Tape & Reel (TR) 2004 Obsolete 1 (Unlimited) EAR99 5mm ROHS3 Compliant 8 8-PowerTDFN No SVHC not_compliant 1mm 6mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - annealed 260 40 MCP87022 YES FET General Purpose Power Single 2.2W 7.6 ns 2.2W Ta 100A 21 ns N-Channel 2.3m Ω @ 25A, 10V 1.6V @ 250μA 2310pF @ 12.5V 29nC @ 4.5V 27ns 17 ns 10V 25V 1.3 V 100A Tc 4.5V 10V +10V, -8V
APT60D100SG/TR APT60D100SG/TR Microchip Technology 0.0000
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0.00000000 - TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Microchip Technology Surface Mount Standard D3PAK Fast Recovery =< 500ns, > 200mA (Io) 250 μA @ 1 kV 2.5 V @ 60 A -55°C ~ 175°C 1000 V 60A - 280 ns
UM4002D UM4002D Microchip Technology 0.0000
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0.00000000 download RoHS non-compliant Attenuator|Switch 2 HF|S Single
2N2327 2N2327 Microchip Technology 0.0000
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0.00000000 - TO-205AD, TO-39-3 Metal Can Microchip Technology Through Hole - TO-39 (TO-205AD) 250 V 2 mA 800 mV 15A @ 60Hz 200 μA Standard Recovery 2.2 V 1.6 A
UM4906D UM4906D Microchip Technology 0.0000
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0.00000000 download RoHS non-compliant Switch|Attenuator 2 S|HF Single
VN0300L-G-P002 VN0300L-G-P002 Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED 1 1 Single 1W Tc 640mA SWITCHING SILICON N-Channel 1.2 Ω @ 1A, 10V 2.5V @ 1mA 190pF @ 20V 30V 30V 0.64A 640mA Tj 50 pF 5V 10V ±30V
2N6661 2N6661 Microchip Technology 0.0000
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0.00000000 download 14 Weeks Through Hole Bulk 2010 Active 1 (Unlimited) 150°C -55°C Non-RoHS Compliant Gold 3 TO-205AD, TO-39-3 Metal Can 6.604mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 1 150°C Single 6.25W 10 ns 800mV 4Ohm TO-39 6.25W Tc 350mA 10 ns N-Channel 4Ohm @ 1A, 10V 2V @ 1mA 50pF @ 24V 20V 90V 350mA Tj 90V 50pF 5V 10V ±20V 4 Ω
VN10KN3-G VN10KN3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 219.992299mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 FET General Purpose Power 1 Single 1W 1W Tc 310mA SWITCHING 5Ohm SILICON N-Channel 5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 60V 310mA Tj 5 pF 5V 10V ±30V
KV2131-00 KV2131-00 Microchip Technology 0.0000
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0.00000000 download Unconfirmed RoHS Compliant VCO 2 Single
TN0104N3-G TN0104N3-G Microchip Technology 0.0000
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0.00000000 download 9 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 219.992299mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 FET General Purpose Power 1 Single 1W 3 ns 1W Tc 450mA SWITCHING 6 ns SILICON N-Channel 1.8 Ω @ 1A, 10V 1.6V @ 500μA 70pF @ 20V 7ns 5 ns 20V 40V 0.45A 450mA Ta 3V 10V ±20V
TP0620N3-G TP0620N3-G Microchip Technology 0.0000
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0.00000000 download 5 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm 12Ohm Through Hole 219.992299mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM WIRE NOT APPLICABLE NOT APPLICABLE 1 Not Qualified 1 Single 1W 10 ns 1W Ta -175mA SWITCHING 20 ns SILICON P-Channel 12 Ω @ 200mA, 10V 2.4V @ 1mA 150pF @ 25V 15ns 16 ns 20V -200V 175mA Tj 200V 5V 10V ±20V
DN2625K4-G DN2625K4-G Microchip Technology 0.0000
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0.00000000 download 19 Weeks Surface Mount Tape & Reel (TR) 2013 Active 3 (168 Hours) 2 EAR99 6.73mm ROHS3 Compliant 3 LOW THRESHOLD TO-252-3, DPak (2 Leads + Tab), SC-63 2.39mm 6.1mm Surface Mount 3.949996g -55°C~150°C TJ MOSFET (Metal Oxide) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 FET General Purpose Power Not Qualified 1 DRAIN Single 10 ns 1.1A SWITCHING 10 ns SILICON N-Channel 3.5 Ω @ 1A, 0V 1000pF @ 25V 7.04nC @ 1.5V 20ns 20 ns 20V 250V Depletion Mode 1.1A Tj 0V ±20V
JANTX2N2329S JANTX2N2329S Microchip Technology 0.0000
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0.00000000 Military, MIL-PRF-19500/276 TO-205AD, TO-39-3 Metal Can Microchip Technology Through Hole -65°C ~ 125°C TO-39 400 V 2 mA 800 mV 15A @ 60Hz 200 μA Standard Recovery 10 μA 220 mA
VP3203N3-G VP3203N3-G Microchip Technology 0.0000
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0.00000000 download 14 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed BOTTOM 1 Other Transistors 1 Single 740mW 10 ns 740mW Ta 650mA SWITCHING 0.6Ohm 25 ns SILICON P-Channel 600m Ω @ 3A, 10V 3.5V @ 10mA 300pF @ 25V 15ns 15 ns 20V -30V 0.65A 650mA Tj 30V 60 pF 4.5V 10V ±20V
VN3205N8-G VN3205N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free 4 HIGH INPUT IMPEDANCE TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed FLAT 260 40 R-PSSO-F3 1 Not Qualified 1 DRAIN Single 1.6W 10 ns 1.6W Ta 1.5A SWITCHING 0.3Ohm 25 ns SILICON N-Channel 300m Ω @ 1.5A, 10V 2.4V @ 10mA 300pF @ 25V 15ns 15 ns 20V 50V 1.5A Tj 8A 30 pF 4.5V 10V ±20V 50ns
VN10KN3-G-P013 VN10KN3-G-P013 Microchip Technology 0.6179
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0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED O-PBCY-T3 1 FET General Purpose Power 1 Single 1W Tc 310mA SWITCHING 5Ohm SILICON N-Channel 5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 60V 310mA Tj 5 pF 5V 10V ±30V
VP0550N3-G VP0550N3-G Microchip Technology 0.0000
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0.00000000 download 16 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Tin 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 BOTTOM NOT APPLICABLE NOT APPLICABLE 1 Not Qualified 1 Single 1W 10 ns 1W Tc -54mA SWITCHING 10 ns SILICON P-Channel 125 Ω @ 10mA, 10V 4.5V @ 1mA 70pF @ 25V 8ns 5 ns 20V -500V 0.054A 54mA Tj 500V 5V 10V ±20V
TP2640LG-G TP2640LG-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 8 EAR99 4.9mm ROHS3 Compliant 8 LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) 1.65mm 3.9mm Surface Mount 84.99187mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 1 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE 1.3W 10 ns 740mW Ta -210mA SWITCHING 60 ns SILICON P-Channel 15 Ω @ 300mA, 10V 2V @ 1mA 300pF @ 25V 15ns 15 ns 20V -400V 86mA Tj 400V 2.5V 10V ±20V
LND150N3-G-P013 LND150N3-G-P013 Microchip Technology 0.0000
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0.00000000 download 8 Weeks Through Hole Tape & Box (TB) 2014 yes Active 1 (Unlimited) 3 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) BOTTOM O-PBCY-T3 1 1 Single 90 ns 740mW Ta 30mA SWITCHING 500V 100 ns SILICON N-Channel 1000 Ω @ 500μA, 0V 10pF @ 25V 450ns 1.3 μs 20V Depletion Mode 0.03A 30mA Tj 500V 0V ±20V
1N5806E3 1N5806E3 Microchip Technology 0.0000
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0.00000000 - Axial Microchip Technology Through Hole Standard A, Axial Fast Recovery =< 500ns, > 200mA (Io) 1 μA @ 150 V 875 mV @ 1 A -65°C ~ 175°C 150 V 1A 25pF @ 10V, 1MHz 25 ns
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