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Discrete Semiconductors

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Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case Height Width Mounting Type Weight Operating Temperature Technology Operating Mode Type JESD-609 Code Terminal Position Pin Count Number of Channels Subcategory Number of Elements Configuration Element Configuration Power Dissipation Turn On Delay Time Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
VN2222LL-G VN2222LL-G Microchip Technology 0.4499
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0.00000000 download 6 Weeks Through Hole Bulk 2006 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free Tin No 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 BOTTOM 1 FET General Purpose Power 1 Single 1W 10 ns 400mW Ta 1W Tc 230mA SWITCHING 10 ns SILICON N-Channel 7.5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 60V 0.099A 230mA Tj 8 pF 5V 10V ±30V
APT30D20SG APT30D20SG Microchip Technology 0.0000
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0.00000000 download Tube Active RoHS Compliant Switching Diode 3 Single
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