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Discrete Semiconductors

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Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Diameter Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Height Width Resistance Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Frequency Range JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration Diode Type JEDEC-95 Code Tolerance Case Connection Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Max Voltage - Peak Reverse (Max) Resistance @ If, F HTS Mounting Package Height Package Length Package Width PCB changed Standard Package Name Supplier Package ECCN (US) Maximum Power Dissipation (mW) Reverse Recovery Time (trr) AEC Qualified Military Maximum Diode Capacitance (pF) Maximum Reverse Voltage (V) Maximum Series Resistance @ Maximum IF (Ohm) Typical Carrier Life Time (us) Maximum Forward Voltage (V)
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