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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Diameter Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Height Width Resistance Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Current Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Frequency Range JESD-30 Code Number of Channels Subcategory Qualification Status Output Voltage Voltage Number of Elements Configuration Diode Type JEDEC-95 Code Output Current Polarity Case Connection Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Transistor Type Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Collector Emitter Saturation Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Max Voltage - Off State Voltage - Peak Reverse (Max) Resistance @ If, F Capacitance Ratio Capacitance Ratio Condition Q @ Vr, F Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - On State (It (AV)) (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic HTS Lead Shape Maximum Operating Temperature (°C) Minimum Operating Temperature (°C) Mounting Package Height Package Length Package Width PCB changed Standard Package Name Supplier Package ECCN (US) Maximum Power Dissipation (mW) Reverse Recovery Time (trr) AEC Qualified Military Maximum Diode Capacitance (pF) Maximum Reverse Voltage (V) Maximum Series Resistance @ Maximum IF (Ohm) Typical Carrier Life Time (us)
TN0106N3-G-P013 TN0106N3-G-P013 Microchip Technology 1.0223
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0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-226-3, TO-92-3 (TO-226AA) Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN BOTTOM NOT SPECIFIED NOT SPECIFIED O-PBCY-T3 1 Not Qualified 1 Single 2 ns 1W Tc 350mA SWITCHING 3Ohm 6 ns SILICON N-Channel 3 Ω @ 500mA, 10V 2V @ 500μA 60pF @ 25V 3ns 3 ns 20V 60V 0.35A 350mA Tj 8 pF 4.5V 10V ±20V
LXS101-23-2 LXS101-23-2 Microchip Technology 0.0000
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0.00000000 download Unconfirmed Supplier Unconfirmed Schottky Diode 3 Dual Series
LXP1004-23-2/TR LXP1004-23-2/TR Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology -55°C ~ 125°C PIN - 1 Pair Series Connection SOT-23-3 0.75pF @ 20V, 1MHz 10 mA 20V 600mOhm @ 10mA, 100MHz
TN0106N3-G-P003 TN0106N3-G-P003 Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED 1 1 Single 1W 2 ns 1W Tc 350mA SWITCHING 3Ohm 6 ns SILICON N-Channel 3 Ω @ 500mA, 10V 2V @ 500μA 60pF @ 25V 3ns 3 ns 2V 60V 350mA Tj 8 pF 4.5V 10V ±20V
MPL4702-406/TR MPL4702-406/TR Microchip Technology 0.0000
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0.00000000 - 0402 (1005 Metric) Microchip Technology -55°C ~ 150°C PIN - Single 0402 3pF @ 10V, 1MHz 50V 2Ohm @ 10mA, 1GHz
MIC94052YC6-TR MIC94052YC6-TR Microchip Technology 0.0000
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0.00000000 download 9 Weeks Surface Mount Tape & Reel (TR) 2005 Active 1 (Unlimited) 150°C -40°C 2.2mm ROHS3 Compliant Lead Free -2A No 6 6-TSSOP, SC-88, SOT-363 1mm 1.35mm 84MOhm Surface Mount -40°C~150°C TJ -6V MOSFET (Metal Oxide) MIC94052 1 270mW 15 ns 84mOhm SC-70-6 270mW Ta 2A 60 ns P-Channel 84mOhm @ 100mA, 4.5V 1.2V @ 250μA 6V 2A Ta 6V 1.8V 4.5V 6V 84 mΩ
APT15DQ120BHBG APT15DQ120BHBG Microchip Technology 0.0000
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0.00000000 - TO-247-3 Microchip Technology Through Hole Standard TO-247-3 Fast Recovery =< 500ns, > 200mA (Io) 100 μA @ 1200 V 3.5 V @ 15 A -55°C ~ 175°C 1200 V 15A - 240 ns
VN2222LL-G VN2222LL-G Microchip Technology 0.4499
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0.00000000 download 6 Weeks Through Hole Bulk 2006 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free Tin No 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 BOTTOM 1 FET General Purpose Power 1 Single 1W 10 ns 400mW Ta 1W Tc 230mA SWITCHING 10 ns SILICON N-Channel 7.5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 60V 0.099A 230mA Tj 8 pF 5V 10V ±30V
DN3545N8-G DN3545N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2005 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free Tin No 4 FAST SWITCHING TO-243AA No SVHC 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 FLAT 260 40 R-PSSO-F3 1 FET General Purpose Power 1 DRAIN Single 1.6W 20 ns 1.6W Ta 200mA SWITCHING 30 ns SILICON N-Channel 20 Ω @ 150mA, 0V 360pF @ 25V 30ns 30 ns 20V 450V Depletion Mode 0.2A 450V 0.3A 0V ±20V
DN3525N8-G DN3525N8-G Microchip Technology 0.0000
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0.00000000 download 7 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free No 3 FAST SWITCHING TO-243AA No SVHC 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - annealed FLAT 260 40 1 1 DRAIN Single 1.6W 20 ns 1.6W Ta 360mA SWITCHING 6Ohm 25 ns SILICON N-Channel 6 Ω @ 200mA, 0V 350pF @ 25V 25ns 25 ns 20V 250V Depletion Mode 360mA Tj 1A 0V ±20V
DN3135N8-G DN3135N8-G Microchip Technology 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free 3 LOW THRESHOLD TO-243AA No SVHC 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) 135A e3 Matte Tin (Sn) FLAT 260 40 1 FET General Purpose Power Not Qualified 350V 1 DRAIN Single 1.3W 10 ns 1.3W Ta 135mA SWITCHING 15 ns SILICON N-Channel 35 Ω @ 150mA, 0V 120pF @ 25V 15ns 15 ns 20V 350V Depletion Mode 135mA Tj 0V ±20V
MPP4204-206 MPP4204-206 Microchip Technology 0.0000
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0.00000000 download Obsolete RoHS Compliant Attenuator|Switch 2 X Single
APT75DQ60SG APT75DQ60SG Microchip Technology 0.0000
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0.00000000 - TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Microchip Technology Surface Mount Standard D3PAK Fast Recovery =< 500ns, > 200mA (Io) 25 μA @ 600 V 2.5 V @ 75 A -55°C ~ 175°C 75A - 31 ns
UM4001C UM4001C Microchip Technology 0.0000
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0.00000000 download Unconfirmed 3.18(Max) RoHS non-compliant Attenuator|Switch 2 S|HF Single
SG2003J-JAN SG2003J-JAN Microchip Technology 0.0000
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0.00000000 10 Weeks Tube Active 1 (Unlimited) RoHS Compliant 16-CDIP (0.300, 7.62mm) Through Hole 150°C TJ 16-CDIP 7 NPN Darlington 50V 500mA 1000 @ 350mA 2V 1.6V @ 500μA, 350mA
UM9301SM UM9301SM Microchip Technology 0.0000
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0.00000000 download Unconfirmed Supplier Unconfirmed Attenuator|Switch 2 MF Single
TC8020K6-G TC8020K6-G Microchip Technology 0.0000
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0.00000000 download 17 Weeks Surface Mount Tray 2012 Active 3 (168 Hours) 56 EAR99 ROHS3 Compliant Tin No 56 56-VFQFN Exposed Pad Surface Mount 191.387631mg -55°C~150°C TJ ENHANCEMENT MODE e4 NICKEL PALLADIUM GOLD QUAD 260 40 12 6 COMPLEX N-CHANNEL AND P-CHANNEL 10 ns SWITCHING 8Ohm METAL-OXIDE SEMICONDUCTOR 20 ns SILICON 6 N and 6 P-Channel 8 Ω @ 1A, 10V 2.4V @ 1mA 50pF @ 25V 15ns 15 ns -200V Standard 200V
APT30D20SG APT30D20SG Microchip Technology 0.0000
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0.00000000 download Tube Active RoHS Compliant Switching Diode 3 Single
UMX9415SM UMX9415SM Microchip Technology 0.0000
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0.00000000 download Unconfirmed RoHS Compliant Switch 2 Single
LXP1002-23-0/TR LXP1002-23-0/TR Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology -55°C ~ 125°C PIN - Single SOT-23-3 0.32pF @ 50V, 1MHz 100 mA 50V 4Ohm @ 100mA, 100MHz
MV39003-P2715 MV39003-P2715 Microchip Technology 0.0000
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0.00000000 download Waffle Active RoHS Compliant VCO|Tuner 2 Single
2N2327A 2N2327A Microchip Technology 0.0000
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0.00000000 - TO-205AD, TO-39-3 Metal Can Microchip Technology Through Hole - TO-39 (TO-205AD) 250 V 2 A 800 mV 15A @ 60Hz 20 μA Standard Recovery 2.2 V 1.6 A
UM7010D UM7010D Microchip Technology 0.0000
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0.00000000 download RoHS non-compliant Attenuator|Switch 2 Single 8541.10.00.80 Terminal Stud 175 -65 Stud 11.7(Max) 5.48 4.75 2 Style D Style D EAR99 7500 No No 0.9@100V 1000 1@100mA 2.5(Min)
MPP4203-206 TR MPP4203-206 TR Microchip Technology 0.0000
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0.00000000 download Tape and Reel Unconfirmed RoHS Compliant Switch 2 X Single
DN2470K4-G DN2470K4-G Microchip Technology 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 Active 3 (168 Hours) 2 EAR99 6.73mm ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.5146mm 6.1mm Surface Mount 3.949996g -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - annealed GULL WING NOT SPECIFIED NOT SPECIFIED DN2470 R-PSSO-G2 1 FET General Purpose Power Not Qualified 1 TO-252AA DRAIN Single 2.5W 30 ns 2.5W Ta 170mA SWITCHING 45 ns SILICON N-Channel 42 Ω @ 100mA, 0V 540pF @ 25V 45ns 60 ns 20V 700V Depletion Mode 170mA Tj 0.5A 0V ±20V
GMP4211-GM1/TR GMP4211-GM1/TR Microchip Technology 0.0000
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0.00000000 GIGAMITE? 0805 (2012 Metric) Microchip Technology -55°C ~ 125°C PIN - Single 0805 0.18pF @ 10V, 1MHz 100V 2Ohm @ 20mA, 100MHz
TP2522N8-G TP2522N8-G Microchip Technology 0.0000
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0.00000000 download 15 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant 4 LOGIC LEVEL COMPATIBLE, LOW THRESHOLD TO-243AA 1.6mm 2.6mm 12Ohm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) FLAT 260 40 R-PSSO-F3 1 Other Transistors Not Qualified 1 DRAIN Single 1.6W 10 ns 1.6W Ta -260mA SWITCHING 20 ns SILICON P-Channel 12 Ω @ 200mA, 10V 2.4V @ 1mA 125pF @ 25V 15ns 15 ns 20V -220V 0.26A 260mA Tj 220V 2A 4.5V 10V ±20V
GCX1206-23-0 GCX1206-23-0 Microchip Technology 0.0000
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0.00000000 GCX1206 TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 2.7pF @ 4V, 1MHz 30 V 3.7 C0/C30 2500 @ 4V, 50MHz
SG2003J SG2003J Microchip Technology 0.0000
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0.00000000 download 20 Weeks IN PRODUCTION (Last Updated: 2 weeks ago) Through Hole Tube 1997 no Discontinued 1 (Unlimited) 16 EAR99 RoHS Compliant Contains Lead No 16 CMOS COMPATIBLE 16-CDIP (0.300, 7.62mm) Through Hole 150°C TJ e0 Tin/Lead (Sn/Pb) DUAL 95V 7 COMPLEX 100A NPN 50V 500mA 50V 50V AMPLIFIER SILICON 7 NPN Darlington 1.6V 1000 @ 350mA 2V 1.6V @ 500μA, 350mA
LND150N3-G-P014 LND150N3-G-P014 Microchip Technology 0.0000
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0.00000000 download 8 Weeks Through Hole Tape & Box (TB) 2014 yes Active 1 (Unlimited) 3 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) BOTTOM O-PBCY-T3 1 1 Single 90 ns 740mW Ta 30mA SWITCHING 100 ns SILICON N-Channel 1000 Ω @ 500μA, 0V 10pF @ 25V 450ns 1.3 μs 20V 500V Depletion Mode 0.03A 30mA Tj 0V ±20V
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