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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Diameter Length RoHS Status Lead Free Contact Plating Voltage - Rated Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Frequency Height Width Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Frequency Range JESD-30 Code Number of Channels Subcategory Qualification Status Gain Number of Elements Configuration Diode Type Tolerance Current Rating (Amps) Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Feedback Cap-Max (Crss) Current - Test Transistor Type Voltage - Test Noise Figure Input Capacitance Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Max Voltage - Peak Reverse (Max) Resistance @ If, F HTS Mounting Package Height Package Length Package Width PCB changed Standard Package Name Supplier Package ECCN (US) Maximum Power Dissipation (mW) AEC Qualified Military Maximum Diode Capacitance (pF) Maximum Reverse Voltage (V) Maximum Series Resistance @ Maximum IF (Ohm) Typical Carrier Life Time (us) Maximum Forward Voltage (V)
UM7201DR UM7201DR Microchip Technology 0.0000
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1214GN-180LV 1214GN-180LV Microchip Technology 0.0000
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MIC94031YM4-TR MIC94031YM4-TR Microchip Technology 0.8876
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0.00000000 download Surface Mount Tape & Reel (TR) TinyFET® Obsolete 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free -1A 4 TO-253-4, TO-253AA Surface Mount -55°C~150°C TJ -16V MOSFET (Metal Oxide) MIC94031 1 568mW 1Ohm SOT-143 568mW Ta 1A P-Channel 450mOhm @ 100mA, 10V 1.4V @ 250μA 100pF @ 12V 1A Ta 16V 100pF 2.7V 10V 16V 450 mΩ
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0.00000000 download 5 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) BOTTOM 1 1 SINGLE WITH BUILT-IN DIODE 1W Tc 120mA SWITCHING SILICON N-Channel 25 Ω @ 120mA, 0V 300pF @ 25V Depletion Mode 120mA Tj 350V 5 pF 0V ±20V
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0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM O-PBCY-T3 1 1 Single 8 ns 1W Tc 190mA SWITCHING 240V 23 ns SILICON N-Channel 10 Ω @ 500mA, 10V 2V @ 1mA 125pF @ 25V 8ns 24 ns 20V 190mA Tj 240V 20 pF 2.5V 10V ±20V
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0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM O-PBCY-T3 1 1 Single 10 ns 1W Ta 160mA SWITCHING 25Ohm 600V 25 ns SILICON N-Channel 20 Ω @ 100mA, 10V 4V @ 2mA 150pF @ 25V 10ns 20 ns 20V 160mA Tj 600V 25 pF 4.5V 10V ±20V
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