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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Diameter Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Height Width Mfr Mounting Type Weight Operating Temperature Technology Operating Mode Current Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Frequency Range JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Voltage Number of Elements Configuration Diode Type Case Connection Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Max Voltage - Peak Reverse (Max) Resistance @ If, F Capacitance Ratio Capacitance Ratio Condition Q @ Vr, F HTS Mounting Package Height Package Length Package Width PCB changed Standard Package Name Supplier Package ECCN (US) Maximum Power Dissipation (mW) AEC Qualified Military Maximum Diode Capacitance (pF) Maximum Reverse Voltage (V) Maximum Series Resistance @ Maximum IF (Ohm) Typical Carrier Life Time (us) Maximum Forward Voltage (V)
1011GN-30EP 1011GN-30EP Microchip Technology 0.0000
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VP0109N3-G VP0109N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 1998 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Tin No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 BOTTOM 1 Other Transistors 1 Single 1W 4 ns 1W Tc 250mA SWITCHING 8Ohm 8 ns SILICON P-Channel 8 Ω @ 500mA, 10V 3.5V @ 1mA 60pF @ 25V 3ns 4 ns 20V -90V 0.25A 250mA Tj 90V 8 pF 5V 10V ±20V
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0.00000000 - Microchip Technology
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free Tin 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM 1 1 Single 400mW Ta 1W Tc 230mA SWITCHING 60V SILICON N-Channel 7.5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 230mA Tj 60V 8 pF 5V 10V ±30V
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 2.7pF @ 0V, 1MHz 22 V - 1000 @ 4V, 50MHz
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0.00000000 download Surface Mount Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) 6 EAR99 ROHS3 Compliant 6 6-VFLGA Surface Mount -25°C~125°C TJ ENHANCEMENT MODE BOTTOM BUTT 260 40 2 350mW 2 Dual 3mA AMPLIFIER METAL-OXIDE SEMICONDUCTOR SILICON 2 N-Channel (Cascoded) 3000 Ω @ 2mA, 2.8V 1.6V @ 10μA 50pF @ 25V 1.6V 600V Standard 1200V 1.2kV
2N6660 2N6660 Microchip Technology 13.9973
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0.00000000 download 6 Weeks Through Hole Bulk 2011 Active 1 (Unlimited) 150°C -55°C Non-RoHS Compliant Lead Free Gold No 3 TO-205AD, TO-39-3 Metal Can Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 11A 1 60V 1 Single 6.25W 10 ns 3Ohm TO-39 6.25W Tc 410mA 10 ns N-Channel 3Ohm @ 1A, 10V 2V @ 1mA 50pF @ 24V 20V 60V 410mA Ta 60V 50pF 5V 10V ±20V 3 Ω
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free Tin No 3 HIGH INPUT IMPEDANCE TO-243AA No SVHC 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 FLAT 260 40 1 1 DRAIN Single 1.6W 15 ns 1.6W Ta 230mA SWITCHING 20 ns SILICON N-Channel 10 Ω @ 150mA, 0V 360pF @ 25V 20ns 20 ns 20V 350V Depletion Mode 230mA Tj 0.5A 0V ±20V
TN0106N3-G-P013 TN0106N3-G-P013 Microchip Technology 1.0223
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0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-226-3, TO-92-3 (TO-226AA) Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN BOTTOM NOT SPECIFIED NOT SPECIFIED O-PBCY-T3 1 Not Qualified 1 Single 2 ns 1W Tc 350mA SWITCHING 3Ohm 6 ns SILICON N-Channel 3 Ω @ 500mA, 10V 2V @ 500μA 60pF @ 25V 3ns 3 ns 20V 60V 0.35A 350mA Tj 8 pF 4.5V 10V ±20V
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0.00000000 download Waffle Active RoHS Compliant Schottky Diode 2
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0.00000000 download 5 Weeks Surface Mount Tape & Reel (TR) 2003 Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Tin No 3 LOW THRESHOLD, LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 950μm 1.3mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 1 FET General Purpose Power 1 Single 360mW 3 ns 360mW Tc 280mA SWITCHING 6 ns SILICON N-Channel 2.5 Ω @ 500mA, 10V 2V @ 1mA 50pF @ 25V 5ns 5 ns 20V 60V 0.28A 280mA Tj 8 pF 4.5V 10V ±20V
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 14.5pF @ 3V, 1MHz 27 V - 200 @ 4V, 50MHz
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0.00000000 download Unconfirmed Supplier Unconfirmed Attenuator|Switch 2 MF Single
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0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM NOT APPLICABLE NOT APPLICABLE 1 Not Qualified 1 Single 1W 8 ns 1W Tc 230mA SWITCHING 6Ohm 18 ns SILICON N-Channel 6 Ω @ 500mA, 10V 2V @ 1mA 125pF @ 25V 8ns 12 ns 30V 120V 230mA Tj 20 pF 2.5V 10V ±30V
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0.00000000 - 0402 (1005 Metric) Microchip Technology -55°C ~ 150°C PIN - Single 0402 0.15pF @ 10V, 1MHz 25V 2Ohm @ 10mA, 100MHz
MIC94031CYW MIC94031CYW Microchip Technology 0.0000
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0.00000000 Tape & Reel (TR) TinyFET® Obsolete 1 (Unlimited) ROHS3 Compliant -55°C~150°C TJ MOSFET (Metal Oxide) 568mW Ta P-Channel 450m Ω @ 100mA, 10V 1.4V @ 250μA 1A Ta 16V
UM4001C UM4001C Microchip Technology 0.0000
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0.00000000 download Unconfirmed 3.18(Max) RoHS non-compliant Attenuator|Switch 2 S|HF Single
LXP1000-23-2/TR LXP1000-23-2/TR Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology -55°C ~ 125°C PIN - 1 Pair Series Connection SOT-23-3 0.28pF @ 5V, 1MHz 5 mA 5V 2.5Ohm @ 5mA, 100MHz
MPL4702-406/TR MPL4702-406/TR Microchip Technology 0.0000
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0.00000000 - 0402 (1005 Metric) Microchip Technology -55°C ~ 150°C PIN - Single 0402 3pF @ 10V, 1MHz 50V 2Ohm @ 10mA, 1GHz
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0.00000000 download Tape & Reel (TR) 2006 SymFET™ Obsolete 1 (Unlimited) Non-RoHS Compliant TO-253-4, TO-253AA Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) SOT-143 568mW Ta P-Channel 160mOhm @ 100mA, 4.5V 1.2V @ 250μA 600pF @ 5.5V 1.8A Ta 6V 1.8V 4.5V 6V
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