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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Frequency Height Width Mounting Type Operating Temperature Voltage - Rated DC Technology Capacitance HTS Code Base Part Number Pin Count Subcategory Gain Max Power Dissipation Number of Elements Diode Type Application Number of Phases Output Current Polarity Forward Current Forward Voltage Case Connection Current Rating (Amps) Element Configuration Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
C3D16065D1 C3D16065D1 Cree/Wolfspeed 4.5926
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0.00000000 Z-Rec® Active ROHS3 Compliant TO-247-3 Through Hole Silicon Carbide Schottky TO-247-3 No Recovery Time > 500mA (Io) 95μA @ 650V 1.8V @ 16A -55°C~175°C 650V 0ns
C4D05120E-TR C4D05120E-TR Cree/Wolfspeed 1.2891
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0.00000000 7 Weeks Surface Mount Tape & Reel (TR) 2017 Z-Rec® Active 3 (168 Hours) 175°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky 1.8V Single No Recovery Time > 500mA (Io) 150μA @ 1200V 1.8V @ 5A -55°C~175°C 42A 1200V 19A DC 0ns 390pF @ 0V 1MHz
C3D06060A C3D06060A Cree/Wolfspeed 3.2895
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0.00000000 6 Weeks Through Hole Tube 2009 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.41mm RoHS Compliant No 2 TO-220-2 Unknown 15.621mm 4.699mm Through Hole 79W Silicon Carbide Schottky 6A 1.8V Single No Recovery Time > 500mA (Io) 50μA @ 600V 1.8V @ 6A -55°C~175°C 600V 6A 50μA 600V 70A 200A 19A DC 0ns 294pF @ 0V 1MHz
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0.00000000 download Through Hole Tube 2008 Zero Recovery™ Obsolete 1 (Unlimited) 2 EAR99 175°C -55°C RoHS Compliant Lead Free 4A No 2 TO-220-2 Through Hole 600V 220pF 8541.10.00.80 3 Rectifier Diodes 1 Silicon Carbide Schottky EFFICIENCY 1 7A Standard 7A CATHODE Single No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 4A -55°C~175°C 600V 7A 200μA 600V 110A 0 s 220pF @ 0V 1MHz
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0.00000000 11 Weeks Tube Z-Rec® Active 1 (Unlimited) TO-247-2 Through Hole Silicon Carbide Schottky TO-247-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 15A -55°C~175°C 1200V 39A DC 0ns 1.2nF @ 0V 1MHz
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C3M0065100J C3M0065100J Cree/Wolfspeed 18.1391
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0.00000000 download 16 Weeks Tube 2017 C3M™ Active 1 (Unlimited) RoHS Compliant TO-263-8, D2Pak (7 Leads + Tab), TO-263CA Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) 65mOhm D2PAK-7 113.5W Tc N-Channel 78mOhm @ 20A, 15V 3.5V @ 5mA 660pF @ 600V 35nC @ 15V 35A Tc 1000V 15V +15V, -4V
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0.00000000 download Through Hole Tube 2009 Zero Recovery™ Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant Lead Free 2A No 2 TO-220-2 Through Hole 600V 120pF Silicon Carbide Schottky 3.5A Standard 3.5A Single TO-220-2 No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 2A -55°C~175°C 600V 3.5A 200μA 600V 65A 600V 3.5A 0 s 120pF @ 0V 1MHz
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0.00000000 download 6 Weeks Tube 2014 Z-Rec® Active RoHS Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky TO-252-2 No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 4A -55°C~175°C 650V 13.5A DC 0ns 251pF @ 0V 1MHz
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0.00000000 16 Weeks Tube C2M™ Active Not Applicable RoHS Compliant TO-247-4 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) TO-247-4 277W Tc N-Channel 125mOhm @ 28A, 20V 4V @ 10mA 2250pF @ 1000V 120nC @ 20V 40A Tc 1700V 20V +25V, -10V
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0.00000000 23 Weeks Tape & Reel (TR) 2015 C3M™ Active 3 (168 Hours) RoHS Compliant 7 TO-263-8, D2Pak (7 Leads + Tab), TO-263CA Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) 65mOhm D2PAK-7 113W Tc N-Channel 78mOhm @ 20A, 15V 2.1V @ 5mA 660pF @ 600V 30nC @ 15V 35A Tc 900V 15V +19V, -8V
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 105V H-37248-4 1.2GHz~1.4GHz 17dB H-37248-4 150mA LDMOS 50V 350W
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0.00000000 download Strip Not For New Designs 1 (Unlimited) RoHS Compliant 65V H-36265-2 1.805GHz~1.88GHz 16.5dB 10μA 550mA LDMOS 28V 70W
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
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0.00000000 download Bulk Z-FET™ Obsolete 1 (Unlimited) Die Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) 313mW Tj N-Channel 110m Ω @ 20A, 20V 4V @ 1mA 1915pF @ 800V 90.8nC @ 20V 50A Tj 1200V 20V +25V, -5V
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