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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mounting Type Operating Temperature Voltage - Rated DC Technology Capacitance HTS Code Base Part Number Pin Count JESD-30 Code Operating Temperature (Max) Subcategory Gain Max Power Dissipation Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Non-rep Pk Forward Current-Max Output Current Polarity Forward Current Forward Voltage Case Connection Current Rating (Amps) Max Surge Current Element Configuration Max Reverse Leakage Current Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage Capacitance @ Vr, F Max Junction Temperature (Tj) FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
C4D10120H C4D10120H Cree/Wolfspeed 4.4708
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0.00000000 11 Weeks Tube Z-Rec® Active 1 (Unlimited) TO-247-2 Through Hole Silicon Carbide Schottky TO-247-2 No Recovery Time > 500mA (Io) 250μA @ 1200V 1.8V @ 10A -55°C~175°C 1200V 31.5A DC 0ns 754pF @ 0V 1MHz
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0.00000000 5 Weeks Radial, Through Hole Tube 2009 Zero Recovery™ Obsolete 1 (Unlimited) Through Hole 175°C -55°C 16.03mm RoHS Compliant Lead Free 20A No 3 TO-247-3 Unknown 21.082mm 5.156mm Through Hole 1.2kV 455pF 138W Silicon Carbide Schottky 10A 1.8V 100A Common Cathode 200μA TO-247-3 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 5A -55°C~175°C 1.2kV 10A 200μA 1.2kV 100A 1 Pair Common Cathode 100A 1200V 10A 0 s
C4D20120H C4D20120H Cree/Wolfspeed 18.8648
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0.00000000 11 Weeks Tube Z-Rec® Active 1 (Unlimited) TO-247-2 Through Hole Silicon Carbide Schottky TO-247-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 20A -55°C~175°C 1200V 54A DC 0ns 1.5nF @ 0V 1MHz
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0.00000000 download 6 Weeks Tube 2014 Z-Rec® Active 1 (Unlimited) RoHS Compliant 3 TO-247-3 No SVHC Through Hole Silicon Carbide Schottky 55A Common Cathode No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 10A -55°C~175°C 650V 1 Pair Common Cathode 10A DC 0ns
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0.00000000 12 Weeks Tray 2016 GaN Not For New Designs 1 (Unlimited) RoHS Compliant 84V 14A 440193 0Hz~4GHz CGH40* 14dB 14A 440193 400mA HEMT 28V 55W
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0.00000000 6 Weeks Through Hole Tube 2009 Zero Recovery™ Active 1 (Unlimited) 175°C -55°C RoHS Compliant Lead Free 1A No 2 TO-220-2 Unknown Through Hole 600V 80pF CSD01060 21.4W Silicon Carbide Schottky 2.2A Standard 2A 1.8V 32A Single 100μA No Recovery Time > 500mA (Io) 100μA @ 600V 1.8V @ 1A -55°C~175°C 600V 2.2A 600V 9A 4A DC 0 s 80pF @ 0V 1MHz
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0.00000000 download Through Hole Tube 2009 Obsolete 1 (Unlimited) 2 EAR99 175°C -55°C RoHS Compliant Lead Free 10A No TO-220-2 Through Hole 600V 550pF 8541.10.00.80 3 R-PSFM-T2 Rectifier Diodes 1 Silicon Carbide Schottky EFFICIENCY 1 TO-220AC 10A Standard 16.5A 1.8V CATHODE Single No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 10A -55°C~175°C 600V 16.5A 200μA 600V 77A 0 s 550pF @ 0V 1MHz
C3M0120100J C3M0120100J Cree/Wolfspeed 12.1079
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0.00000000 16 Weeks Tube 2017 C3M™ Active 1 (Unlimited) RoHS Compliant TO-263-8, D2Pak (7 Leads + Tab), TO-263CA Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) 120mOhm D2PAK-7 83W Tc N-Channel 155mOhm @ 15A, 15V 3.5V @ 3mA 350pF @ 600V 21.5nC @ 15V 22A Tc 1000V 15V +15V, -4V
C3D08060A C3D08060A Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Through Hole Tube 2009 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.41mm RoHS Compliant No 2 TO-220-2 Unknown 15.621mm 4.699mm Through Hole 100W Silicon Carbide Schottky 8A 1.8V 220A Single 50μA No Recovery Time > 500mA (Io) 50μA @ 600V 1.8V @ 8A -55°C~175°C 600V 8A 50μA 600V 220A 80A 24A DC 0ns 441pF @ 0V 1MHz
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0.00000000 7 Weeks Through Hole Tube 2011 Z-Rec® Active 1 (Unlimited) 175°C -55°C RoHS Compliant No 3 TO-247-3 Unknown 25.2mm Through Hole 1.2nF 220W Silicon Carbide Schottky 15A 3V 130A Common Cathode 200μA No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 15A -55°C~175°C 1.2kV 21.5A 200μA 1.2kV 130A 1 Pair Common Cathode 100A 1200V 0ns 1.2kV 175°C
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0.00000000 download Through Hole Tube 2008 Zero Recovery™ Obsolete 1 (Unlimited) EAR99 RoHS Compliant TO-220-2 unknown Through Hole 8541.10.00.80 175°C Rectifier Diodes 1 SINGLE Silicon Carbide Schottky 69.5A No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 8A -55°C~175°C 600V 12.5A 600V 0 s 470pF @ 0V 1MHz
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0.00000000 download 6 Weeks Tube 2015 Z-Rec® Active 1 (Unlimited) RoHS Compliant TO-247-3 Through Hole Silicon Carbide Schottky TO-247-3 No Recovery Time > 500mA (Io) 250μA @ 1200V 1.8V @ 8A -55°C~175°C 1 Pair Common Cathode 1200V 24.5V DC
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0.00000000 6 Weeks Surface Mount Tube 2014 Z-Rec® Active 175°C -55°C 7.34mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown 2.388mm 6.248mm Surface Mount 40.5W Silicon Carbide Schottky 5.9A 1.8V 18.8A Single 50μA TO-252-2 No Recovery Time > 500mA (Io) 50μA @ 1200V 1.8V @ 2A -55°C~175°C 1.2kV 5.9A 150μA 1.2kV 18.8A 19A 1200V 10A DC 0 s 167pF @ 0V 1MHz
C5D05170H C5D05170H Cree/Wolfspeed 0.0000
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0.00000000 11 Weeks Z-Rec® Active Not Applicable TO-247-2 Through Hole Silicon Carbide Schottky TO-247-2 No Recovery Time > 500mA (Io) 200μA @ 1700V 1.8V @ 5A -55°C~175°C 1700V 18A DC 0ns 425pF @ 0V 1MHz
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0.00000000 8 Weeks Tray GaN Active 1 (Unlimited) RoHS Compliant 150V Die 6GHz 17dB 125mA HEMT 50V 75W
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0.00000000 8 Weeks Tape & Reel (TR) GaN Active 1 (Unlimited) RoHS Compliant 125V H-37265J-2 1.2GHz~1.4GHz 20dB H-37265J-2 100mA HEMT 50V 350W
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0.00000000 13 Weeks Tube Automotive, AEC-Q101, E Active Not Applicable TO-220-2 Through Hole Silicon Carbide Schottky TO-220-2 No Recovery Time > 500mA (Io) 200μA @ 1200V 1.8V @ 20A -55°C~175°C 1200V 54.5A DC 0ns 1500pF @ 0V 1MHz
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0.00000000 download 8 Weeks 2017 GaN Active Not Applicable HEMT 28V 75W
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 105V H-36275-4 1.03GHz~1.09GHz 21dB H-36275-4 150mA LDMOS 50V 900W
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0.00000000 6 Weeks Surface Mount Tube 2009 Z-Rec® Active 175°C -55°C 7.34mm RoHS Compliant No 2 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown 2.388mm 7.518mm Surface Mount 39.5W Silicon Carbide Schottky 2A 1.7V 65A Single 50μA TO-252-2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 2A -55°C~175°C 600V 2A 50μA 600V 65A 21A 600V 5A DC 0 s 120pF @ 0V 1MHz
PTVA043502EC-V1-R0 PTVA043502EC-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 14 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
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