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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Capacitance HTS Code Base Part Number Operating Temperature (Max) Subcategory Gain Max Power Dissipation Number of Elements Configuration Diode Type Output Current Polarity Forward Current Forward Voltage Current Rating (Amps) Max Surge Current Element Configuration Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
GTRA384802FC-V1-R0 GTRA384802FC-V1-R0 Cree/Wolfspeed 0.0000
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0.00000000 Tape & Reel (TR) GaN Active 125V 3.6GHz~3.8GHz 13.7dB 250mA HEMT 48V 63W
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0.00000000 6 Weeks Through Hole Tube 2007 Z-Rec® Not For New Designs 1 (Unlimited) 175°C -55°C RoHS Compliant No 2 TO-247-2 Unknown 25.93mm Through Hole 231W Silicon Carbide Schottky 14.4A 2V 55A Single 60μA TO-247-2 No Recovery Time > 500mA (Io) 60μA @ 1700V 2V @ 10A -55°C~175°C 1.7kV 14.4A 20μA 1.7kV 55A 55A 1700V 14.4A DC 0ns 1.7kV 827pF @ 0V 1MHz 175°C
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0.00000000 Z-Rec® Active 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky No Recovery Time > 500mA (Io) 50μA @ 650V 1.8V @ 8A -55°C~175°C 650V 25.5A DC 0ns 395pF @ 0V 1MHz
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0.00000000 6 Weeks Surface Mount Tube 2014 Z-Rec® Active 175°C -55°C 7.34mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown 2.388mm 6.248mm Surface Mount 40.5W Silicon Carbide Schottky 5.9A 1.8V 18.8A Single 50μA TO-252-2 No Recovery Time > 500mA (Io) 50μA @ 1200V 1.8V @ 2A -55°C~175°C 1.2kV 5.9A 150μA 1.2kV 18.8A 19A 1200V 10A DC 0 s 167pF @ 0V 1MHz
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