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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mounting Type Operating Temperature Voltage - Rated DC Technology Capacitance Current HTS Code Pin Count JESD-30 Code Operating Temperature (Max) Subcategory Gain Max Power Dissipation Power - Max Voltage Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Non-rep Pk Forward Current-Max Output Current Polarity Forward Current Forward Voltage Case Connection Current Rating (Amps) Max Surge Current Element Configuration Power Dissipation Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Gate to Source Voltage (Vgs) FET Feature Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
CAS300M12BM2 CAS300M12BM2 Cree/Wolfspeed 0.0000
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0.00000000 19 Weeks Screw Bulk 2014 Z-FET™ Active 1 (Unlimited) 150°C -40°C RoHS Compliant 7 Module, Screw Terminals No SVHC Chassis Mount 150°C TJ 1.66kW 1660W 2 1.66kW 2.3V 5mOhm Module 300A 2 N-Channel (Half Bridge) 5.7mOhm @ 300A, 20V 2.3V @ 15mA (Typ) 11700pF @ 600V 1025nC @ 20V 25V Silicon Carbide (SiC) 423A Tc 1200V 1.2kV
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0.00000000 download Through Hole Tube 2008 Zero Recovery™ Obsolete 1 (Unlimited) EAR99 RoHS Compliant TO-220-2 unknown Through Hole 8541.10.00.80 175°C Rectifier Diodes 1 SINGLE Silicon Carbide Schottky 69.5A No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 8A -55°C~175°C 600V 12.5A 600V 0 s 470pF @ 0V 1MHz
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0.00000000 Z-Rec® Active 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky No Recovery Time > 500mA (Io) 50μA @ 650V 1.8V @ 8A -55°C~175°C 650V 25.5A DC 0ns 395pF @ 0V 1MHz
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0.00000000 6 Weeks Surface Mount Tube 2009 Z-Rec® Active Through Hole 175°C -55°C 7.34mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown 2.388mm 7.518mm Surface Mount 53W Silicon Carbide Schottky 3A 1.7V 100A Single 50μA TO-252-2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 3A -55°C~175°C 600V 3A 100μA 600V 100A 100A 600V 11A DC 0 s 155pF @ 0V 1MHz
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0.00000000 6 Weeks Surface Mount Tube 2009 Z-Rec® Active 175°C -55°C 11.05mm RoHS Compliant No 2 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Unknown 4.572mm 10.312mm Surface Mount 100W Silicon Carbide Schottky 8A 1.8V 220A Single 50μA TO-263-2 No Recovery Time > 500mA (Io) 50μA @ 600V 1.8V @ 8A -55°C~175°C 600V 8A 200μA 600V 220A 80A 600V 24A DC 0 s 441pF @ 0V 1MHz
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0.00000000 download Surface Mount Tube 2009 Zero Recovery™ yes Obsolete 1 (Unlimited) EAR99 RoHS Compliant Lead Free 2A TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount 600V 120pF 8541.10.00.80 175°C Rectifier Diodes 1 SINGLE Silicon Carbide Schottky 3.5A Standard No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 2A -55°C~175°C 600V 3.5A 0ns 120pF @ 0V 1MHz
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