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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Height Width Impedance Mounting Type Weight Operating Temperature Technology Operating Mode HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Gain Max Power Dissipation Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Forward Current Forward Voltage Tolerance Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Max Surge Current Element Configuration Voltage Tolerance Power Dissipation Turn On Delay Time Max Reverse Leakage Current Test Current ESD Protection Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage (DC) Max Collector Current Reverse Recovery Time-Max Collector Emitter Breakdown Voltage Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Zener Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Transistor Type Highest Frequency Band Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Voltage - Breakdown (V(BR)GSS) Current Drain (Id) - Max Impedance-Max DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2) Collector-Base Capacitance-Max Noise Figure (dB Typ @ f)
2SC1627A-O,PASF(M 2SC1627A-O,PASF(M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 800mW TO-92MOD NPN 100nA ICBO 80V 400mA 70 @ 50mA 2V 400mV @ 20mA, 200A 100MHz
DSR01S30SL,L3F DSR01S30SL,L3F Toshiba Semiconductor and Storage 0.2541
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2015 Active 1 (Unlimited) RoHS Compliant 0201 (0603 Metric) Surface Mount Schottky Small Signal =< 200mA (Io), Any Speed 700nA @ 30V 620mV @ 100mA 125°C Max 30V 100mA 30V 8.2pF @ 0V 1MHz
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0.00000000 11 Weeks Surface Mount Cut Tape (CT) 2013 Active 1 (Unlimited) EAR99 RoHS Compliant SOT-553 Surface Mount 150°C Other Diodes 100mW Standard 100mA 1A Dual Small Signal =< 200mA (Io), Any Speed 500nA @ 80V 1.2V @ 100mA 150°C Max 80V 100mA 2 Independent 1.6 ns
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0.00000000 download Through Hole Bulk 2009 Obsolete 1 (Unlimited) RoHS Compliant Lead Free No 3 TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 1 Single 125W 125W Tc 10A N-Channel 750m Ω @ 5A, 10V 4V @ 1mA 2040pF @ 10V 45nC @ 10V 22ns 36 ns 30V 600V 10A Ta 10V ±30V
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H Active Not Applicable 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) 1 Single 110 ns 2.2mOhm TO-220SIS 45W Tc 100A 180 ns N-Channel 2.7mOhm @ 50A, 10V 4V @ 1mA 10500pF @ 30V 140nC @ 10V 67ns 64 ns 20V 60V 100A Tc 60V 10.5nF 10V ±20V 2.7 mΩ
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0.00000000 Surface Mount Cut Tape (CT) 2009 Obsolete 1 (Unlimited) RoHS Compliant SC-70, SOT-323 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Powers Single 100mW Ta 100mA N-Channel 12 Ω @ 10mA, 2.5V 8.5pF @ 3V 10V 20V 0.1A 100mA Ta 2.5V 10V
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 125°C TJ 200mW NPN, PNP 100nA ICBO 50V 150mA 120 @ 2mA 6V 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA 150MHz
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2016 yes Active 1 (Unlimited) 3 RoHS Compliant SOT-23-3 Flat Leads unknown Surface Mount DUAL GULL WING NOT SPECIFIED NOT SPECIFIED R-PDSO-G3 150°C SILICON 2 Standard 0.215A Common Anode Standard Recovery >500ns, > 200mA (Io) 80V 215mA 1 Pair Common Anode 0.32W 0.004μs
TK9J90E,S1E TK9J90E,S1E Toshiba Semiconductor and Storage 2.3633
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0.00000000 16 Weeks Through Hole Tube 2014 Active 1 (Unlimited) 150°C -55°C RoHS Compliant TO-3P-3, SC-65-3 Through Hole 6.961991g 150°C TJ MOSFET (Metal Oxide) 1 Single 80 ns 1Ohm TO-3P(N) 250W Tc 9A 140 ns N-Channel 1.3Ohm @ 4.5A, 10V 4V @ 900μA 2000pF @ 25V 46nC @ 10V 40ns 35 ns 30V 900V 9A Ta 900V 2nF 10V ±30V 1.3 Ω
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSVI yes Active 1 (Unlimited) RoHS Compliant 6 6-WDFN Exposed Pad Surface Mount 150°C TJ MOSFET (Metal Oxide) 1W 1W Ta 6A P-Channel 23.1m Ω @ 4A, 4.5V 1V @ 1mA 1800pF @ 10V 24.8nC @ 4.5V 8V -20V 6A Ta 20V 1.5V 4.5V ±8V
SSM3J118TU(TE85L) SSM3J118TU(TE85L) Toshiba Semiconductor and Storage 1.0353
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0.00000000 52 Weeks Surface Mount Cut Tape (CT) 2014 U-MOSII Active 1 (Unlimited) RoHS Compliant 3 3-SMD, Flat Lead unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) Single 800mW 500mW Ta 1.4A P-Channel 240m Ω @ 650mA, 10V 137pF @ 15V -30V 1.4A Ta 30V 4V 10V ±20V
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0.00000000 download 12 Weeks Surface Mount Cut Tape (CT) 2009 Active 1 (Unlimited) 125°C -40°C RoHS Compliant Lead Free Silver, Tin No 2 SOD-123F Surface Mount CRS08 Schottky 1.5A 360mV 30A Single 1mA Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 30V 360mV @ 1.5A -40°C~125°C 30V 1.5A 1mA 30V 30A 90pF @ 10V 1MHz
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0.00000000 download Cut Tape (CT) 2014 Obsolete 1 (Unlimited) RoHS Compliant SC-70, SOT-323 Surface Mount Standard Small Signal =< 200mA (Io), Any Speed 500nA @ 80V 1.2V @ 100mA 125°C Max 1 Pair Series Connection 80V 100mA 4ns
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0.00000000 52 Weeks Surface Mount Cut Tape (CT) 2009 Active 1 (Unlimited) 125°C -55°C RoHS Compliant No 3 TO-236-3, SC-59, SOT-23-3 Surface Mount 125°C TJ 100mW 100mW Single SC-59 6.5mA N-Channel 8.2pF @ 10V 8.2pF 2.6mA @ 10V 400mV @ 100nA 50V 6.5mA
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0.00000000 download Bulk 2013 Obsolete 1 (Unlimited) L-FLAT™ Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 60V 0.58V @ 10A -40°C~125°C 60V 10A DC 345pF @ 10V 1MHz
MT4S300U(TE85L,O,F MT4S300U(TE85L,O,F Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) 4 RoHS Compliant LOW NOISE SC-82A, SOT-343 Surface Mount 150°C TJ DUAL GULL WING YES R-PDSO-G4 16.9dB 250mW 1 SINGLE NPN AMPLIFIER SILICON GERMANIUM NPN KA B 26500MHz 4V 50mA 200 @ 10mA 3V 26.5GHz 0.27pF 0.55dB @ 2GHz
CRG05(TE85L,Q,M) CRG05(TE85L,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) Active 1 (Unlimited) 150°C -40°C RoHS Compliant 2 SOD-123F Surface Mount Standard 1A Single Standard Recovery >500ns, > 200mA (Io) 10μA @ 800V 1.2V @ 1A -40°C~150°C 10μA 800V 15A
2SA1931(NOMARK,A,Q 2SA1931(NOMARK,A,Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole 150°C TJ 2W PNP 1μA ICBO 50V 5A 100 @ 1A 1V 400mV @ 200mA, 2A 60MHz
1SS300,LF 1SS300,LF Toshiba Semiconductor and Storage 0.1780
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) 3 EAR99 2mm RoHS Compliant SC-70, SOT-323 unknown 900μm 1.25mm Surface Mount 6.208546mg 8541.10.00.70 DUAL GULL WING R-PDSO-G3 125°C SILICON 2 Standard 0.1A 300mA 1.2V 2A Common Anode Small Signal =< 200mA (Io), Any Speed 500nA @ 80V 1.2V @ 100mA 125°C Max 80V 100mA 1 Pair Common Anode 4 ns 0.1W 80V
2SK880-Y(TE85L,F) 2SK880-Y(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 52 Weeks Surface Mount Cut Tape (CT) 2009 yes Active 1 (Unlimited) RoHS Compliant 3 SC-70, SOT-323 Surface Mount 125°C TJ 100mW Single 3mA N-Channel 13pF @ 10V 1.2mA @ 10V 1.5V @ 100nA 50V
TJ60S06M3L(T6L1,NQ TJ60S06M3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 100W Tc 60A SWITCHING 0.0145Ohm 60V SILICON P-Channel 11.2m Ω @ 30A, 10V 3V @ 1mA 7760pF @ 10V 156nC @ 10V 100ns 250 ns 10V 60A Ta 60V 120A 6V 10V +10V, -20V
2SC5085-O(TE85L,F) 2SC5085-O(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) EAR99 RoHS Compliant SC-70, SOT-323 Surface Mount 125°C TJ Other Transistors 100mW 100mW Single NPN 12V 80mA 12V NPN 5000MHz 80 @ 20mA 10V 7GHz 1dB @ 500MHz
CUS15S40,H3F CUS15S40,H3F Toshiba Semiconductor and Storage 0.3342
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) 125°C -55°C RoHS Compliant Silver, Tin 2 SC-76, SOD-323 Surface Mount Schottky Single Fast Recovery =< 500ns, > 200mA (Io) 200μA @ 40V 450mV @ 1A 125°C Max 40V 1.5A 200μA 40V 5A 170pF @ 0V 1MHz
2SC3665-Y(T2NSW,FM 2SC3665-Y(T2NSW,FM Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) SC-71 Through Hole 150°C TJ 1W NPN 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
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0.00000000 download Bulk 2013 Obsolete 1 (Unlimited) L-FLAT™ Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 30V 0.47V @ 10A -40°C~125°C 30V 10A DC 530pF @ 10V 1MHz
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0.00000000 Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) SOT-563, SOT-666 Surface Mount 150°C TJ 100mW 2 PNP (Dual) 100nA ICBO 50V 150mA 200 @ 2mA 6V 300mV @ 10mA, 100mA 800MHz
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0.00000000 Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 unknown Surface Mount YES BIP General Purpose Small Signal 100mW 2 NPN 0.1W SILICON 2 NPN - Pre-Biased (Dual) 100nA ICBO 50V 100mA 80 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 10k Ω 47k Ω
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0.00000000 14 Weeks Cut Tape (CT) Discontinued 1 (Unlimited) RoHS Compliant SC-70, SOT-323 Surface Mount 125°C TJ YES Other Transistors 23dB 100mW Single NPN 0.1W NPN 260MHz 30V 20mA 40 @ 1mA 6V 550MHz 5dB @ 100MHz
CRZ33(TE85L,Q,M) CRZ33(TE85L,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) RoHS Compliant Silver, Tin 2 SOD-123F 30Ohm Surface Mount -40°C~150°C CRZ33 700mW ±10% Single 10% 10μA 10mA No 10μA @ 26.4V 1V @ 200mA 33V 30Ohm
2SC2383-Y(T6DNS,FM 2SC2383-Y(T6DNS,FM Toshiba Semiconductor and Storage 0.0852
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 1μA ICBO 160V 1A 60 @ 200mA 5V 1.5V @ 50mA, 500mA 100MHz
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