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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Resistance Mfr Mounting Type Weight Operating Temperature Technology Operating Mode Capacitance Max Frequency Terminal Position Terminal Form Base Part Number Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Gain Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Rep Pk Reverse Voltage-Max Non-rep Pk Forward Current-Max Polarity Case Code (Metric) Case Code (Imperial) Forward Current Forward Voltage Case Connection Gain Bandwidth Product Polarity/Channel Type Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Recovery Time Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Feedback Cap-Max (Crss) Current - Test Transistor Type Voltage - Test Noise Figure Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
3SK291(TE85L,F) 3SK291(TE85L,F) Toshiba Semiconductor and Storage 8.8766
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0.00000000 52 Weeks Cut Tape (CT) 2009 Active 1 (Unlimited) RoHS Compliant 30mA 4 SC-61AA 800MHz YES 125°C FET General Purpose Powers 22.5dB 150mW Single 30mA METAL-OXIDE SEMICONDUCTOR 0.03A 12.5V 10mA N-Channel Dual Gate 6V 2.5dB
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 unknown Surface Mount BIP General Purpose Small Signal 100mW 100mW 2 PNP 50V 100mA 50V 300mV SILICON 2 PNP - Pre-Biased (Dual) 100nA ICBO 80 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 22k Ω 47k Ω
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0.00000000 download Bulk 2010 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole TO-92MOD
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 6.010099mg 200mW 200mW NPN 50V US6 100mA 50V 300mV 2 NPN - Pre-Biased (Dual) 500nA 50V 100mA 100mA 5V 80 80 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 2.2kOhms 47kOhms
RN2602(TE85L,F) RN2602(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2001 Active 1 (Unlimited) RoHS Compliant SC-74, SOT-457 Surface Mount 300mW 300mW 50V 100mA 50V 300mV 2 PNP - Pre-Biased (Dual) 100nA ICBO 50 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 10k Ω 10k Ω
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) RoHS Compliant SC-74A, SOT-753 Surface Mount BIP General Purpose Small Signal 300mW 300mW 2 PNP 50V 100mA 50V 300mV SILICON 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 100nA ICBO 80 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 10k Ω 47k Ω
RN2511(TE85L,F) RN2511(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SC-74A, SOT-753 Surface Mount BIP General Purpose Small Signal 300mW 300mW 2 PNP 50V 100mA 50V 300mV SILICON 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 100nA ICBO 120 @ 1mA 5V 300mV @ 250μA, 5mA 200MHz 10k Ω
RN1505(TE85L,F) RN1505(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Cut Tape (CT) 2014 Discontinued 1 (Unlimited) EAR99 150°C -55°C RoHS Compliant 5 SC-74A, SOT-753 Surface Mount 250MHz BIP General Purpose Small Signal 300mW 2 NPN Dual 50V 100mA 50V 300mV 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 100nA ICBO 100mA 50V 5V 80 80 @ 10mA 5V 300mV @ 250μA, 5mA 2.2k Ω 47k Ω
1SS372(TE85L,F) 1SS372(TE85L,F) Toshiba Semiconductor and Storage 0.4326
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 100°C -40°C Non-RoHS Compliant No 3 SC-70, SOT-323 Surface Mount DUAL GULL WING Rectifier Diodes SILICON 2 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS Schottky 15V 1A 500mV Small Signal =< 200mA (Io), Any Speed 20μA @ 10V 500mV @ 100mA 125°C Max 1A 10V 100mA 0.1W 20pF @ 0V 1MHz
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0.00000000 Surface Mount Cut Tape (CT) 2014 Obsolete 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 200mW 200mW 50V 100mA 50V 300mV 2 PNP - Pre-Biased (Dual) 500nA 70 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 22k Ω 22k Ω
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0.00000000 16 Weeks Through Hole Tube 2009 Active 1 (Unlimited) 20.5mm RoHS Compliant No 3 TO-3PL 30MHz 26mm 5.2mm Through Hole 150°C TJ 150W 1 30MHz Single 150W 15A 230V 230V PNP 5μA ICBO -3V 230V -5V 80 80 @ 1A 5V 3V @ 800mA, 8A
TPN14006NH,L1Q TPN14006NH,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSVIII-H Active 1 (Unlimited) EAR99 RoHS Compliant 8 8-PowerVDFN 13.9mOhm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1nF FET General Purpose Power Single 30W 700mW Ta 30W Tc 13A 18 ns N-Channel 14m Ω @ 6.5A, 10V 4V @ 200μA 1300pF @ 30V 15nC @ 10V 9ns 5.5 ns 20V 60V 13A Ta 6.5V 10V ±20V
SSM3J356R,LF SSM3J356R,LF Toshiba Semiconductor and Storage 0.0357
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2015 U-MOSVI yes Active 1 (Unlimited) 3 RoHS Compliant SOT-23-3 Flat Leads Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL R-PDSO-F3 1 SINGLE WITH BUILT-IN DIODE 1W Ta 2A SWITCHING 0.4Ohm 60V SILICON P-Channel 300m Ω @ 1A, 10V 2V @ 1mA 330pF @ 10V 8.3nC @ 10V 2A 2A Ta 60V 4V 10V +10V, -20V
HN1C01FE-GR,LF HN1C01FE-GR,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 Surface Mount 150°C TJ 100mW 100mW 50V ES6 150mA 50V 250mV 2 NPN (Dual) 100nA ICBO 50V 150mA 200 @ 2mA 6V 250mV @ 10mA, 100mA 80MHz
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0.00000000 SOT-563, SOT-666 Toshiba Semiconductor and Storage Surface Mount 100mW ES6 2 NPN - Pre-Biased (Dual) 100nA (ICBO) 50V 100mA 120 @ 1mA, 5V 300mV @ 250μA, 5mA 250MHz 4.7kOhms -
SSM6N35AFE,LF SSM6N35AFE,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) 6 RoHS Compliant SOT-563, SOT-666 Surface Mount 150°C ENHANCEMENT MODE FLAT YES R-PDSO-F6 250mW 2 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR SWITCHING 2.4Ohm 20V METAL-OXIDE SEMICONDUCTOR SILICON 2 N-Channel (Dual) 1.1 Ω @ 150mA, 4.5V 1V @ 100μA 36pF @ 10V 0.34nC @ 4.5V Logic Level Gate, 1.2V Drive 0.25A 250mA Ta 20V 10 pF
RN1702,LF RN1702,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) 5-TSSOP, SC-70-5, SOT-353 Surface Mount 200mW 2 NPN - Pre-Biased (Dual) 500nA 50V 100mA 50 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 10k Ω 10k Ω
1SS308(TE85L,F 1SS308(TE85L,F Toshiba Semiconductor and Storage 0.3470
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2009 Active 1 (Unlimited) EAR99 125°C -55°C RoHS Compliant No 5 SC-74A, SOT-753 Surface Mount Other Diodes 200mW Standard 100mA 2A Common Anode 500nA Small Signal =< 200mA (Io), Any Speed 500nA @ 80V 1.2V @ 100mA 125°C Max 80V 100mA 500nA 85V 2A 4 Common Anode 4 ns 1.6 ns
TK30S06K3L(T6L1,NQ TK30S06K3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSIV Active 1 (Unlimited) 175°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) 1 58W DPAK+ 58W Tc 30A N-Channel 18Ohm @ 15A, 10V 3V @ 1mA 1350pF @ 10V 28nC @ 10V 10ns 11 ns 20V 30A Ta 60V 1.35nF 6V 10V ±20V 18 Ω
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0.00000000 52 Weeks Surface Mount Tape & Reel (TR) 2004 yes Active 1 (Unlimited) RoHS Compliant SC-70, SOT-323 unknown Surface Mount 6.208546mg 125°C TJ 100mW Single 6.5mA N-Channel 8.2pF @ 10V -30V 10V 1.2mA @ 10V 400mV @ 100nA
HN2D02FU,LF HN2D02FU,LF Toshiba Semiconductor and Storage 0.2333
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount Standard Small Signal =< 200mA (Io), Any Speed 500nA @ 80V 1.2V @ 100mA 125°C Max 3 Independent 80V 80mA 4ns
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0.00000000 download Surface Mount Cut Tape (CT) 2009 Discontinued 1 (Unlimited) RoHS Compliant SC-74A, SOT-753 Surface Mount 150°C TJ 300mW 300mW PNP 100MHz Dual 120V 100mA 120V 300mV 2 PNP (Dual) Matched Pair, Common Emitter 100nA ICBO -300mV -120V -5V 200 200 @ 2mA 6V 300mV @ 1mA, 10mA
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 125°C -55°C 620μm RoHS Compliant Lead Free No 2 2-SMD, No Lead 300μm 320μm Surface Mount DSF01S30 Schottky 0603 0201 100mA 2A Single 50μA Small Signal =< 200mA (Io), Any Speed 50μA @ 30V 500mV @ 100mA 125°C Max 30V 100mA 50μA 30V 2A 9.3pF @ 0V 1MHz
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 1μA ICBO 15V 3A 800 @ 500mA 1V 500mV @ 30mA, 3A 150MHz
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0.00000000 download Through Hole Bulk 2009 Obsolete 1 (Unlimited) Through Hole 15.9mm RoHS Compliant Lead Free No 3 TO-3P-3, SC-65-3 Unknown 19mm 4.8mm Through Hole 150°C TJ MOSFET (Metal Oxide) 1 Single 150W 4V 150W Tc 20A N-Channel 330m Ω @ 10A, 10V 4V @ 1mA 4250pF @ 25V 60nC @ 10V 12ns 10 ns 30V 600V 600V 4 V 20A Ta 10V ±30V
SSM6N37FE,LM SSM6N37FE,LM Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) yes Active 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 Surface Mount 150°C TJ 150mW 150mW 250mA 2 N-Channel (Dual) 2.2 Ω @ 100mA, 4.5V 1V @ 1mA 12pF @ 10V 10V 20V Logic Level Gate 20V
SSM6N37FU,LF SSM6N37FU,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 150°C 300mW 2 N-Channel (Dual) 2.2 Ω @ 100mA, 4.5V 1V @ 1mA 12pF @ 10V Logic Level Gate, 1.5V Drive 250mA Ta 20V
TPN1600ANH,L1Q TPN1600ANH,L1Q Toshiba Semiconductor and Storage 0.8327
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSVIII-H Active 1 (Unlimited) 5 RoHS Compliant No 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT S-PDSO-F5 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 14 ns 700mW Ta 42W Tc 17A SWITCHING 21 ns SILICON N-Channel 16m Ω @ 8.5A, 10V 4V @ 200μA 1600pF @ 50V 19nC @ 10V 5ns 6.2 ns 20V 100V 36A 17A Tc 50 pF 10V ±20V
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