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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Contact Plating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Height Width Impedance Mfr Mounting Type Weight Operating Temperature Technology Operating Mode HTS Code Terminal Position Terminal Form Base Part Number Surface Mount JESD-30 Code Number of Channels Subcategory Max Power Dissipation Power - Max Diode Element Material Number of Elements Diode Type Output Current-Max Polarity Forward Current Forward Voltage Tolerance Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Max Surge Current Element Configuration Voltage Tolerance Power Dissipation Turn On Delay Time Max Reverse Leakage Current Test Current ESD Protection Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max FET Technology Zener Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Impedance-Max Zener Current DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
TPH3R203NL,L1Q TPH3R203NL,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSVIII-H Active 1 (Unlimited) 5 EAR99 RoHS Compliant No 8 8-PowerVDFN Surface Mount 850.995985mg 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT S-PDSO-F5 1 1 DRAIN Single 24 ns 1.6W Ta 44W Tc 47A SWITCHING 0.0047Ohm 11.5 ns SILICON N-Channel 3.2m Ω @ 23.5A, 10V 2.3V @ 300μA 2100pF @ 15V 21nC @ 10V 4.4ns 5.7 ns 20V 30V 60A 47A Tc 200A 94 mJ 4.5V 10V ±20V
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole 150°C TJ 2W TO-220NIS PNP 1μA ICBO 230V 1A 100 @ 100mA 5V 1.5V @ 50mA, 500mA 70MHz
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) EAR99 RoHS Compliant No 6 SOT-563, SOT-666 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 20 ns 500mW Ta 2.3A 31 ns N-Channel 85m Ω @ 1.5A, 4V 1V @ 1mA 270pF @ 10V 12V 30V 2.3A Ta 1.8V 4V ±12V
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0.00000000 12 Weeks Tape & Reel (TR) 2010 Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 unknown Surface Mount RN142* 200mW NPN - Pre-Biased 500nA 50V 800mA 90 @ 100mA 1V 250mV @ 1mA, 50mA 300MHz 2.2 k Ω 10 k Ω
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 800mW TO-92MOD NPN 100nA ICBO 150V 50mA 70 @ 10mA 5V 500mV @ 1mA, 10mA 120MHz
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD PNP 1μA ICBO 50V 2A 120 @ 100mA 2V 500mV @ 50mA, 1A 100MHz
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