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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Contact Plating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Frequency Mounting Type Weight Operating Temperature Technology Operating Mode Capacitance Terminal Position Terminal Form Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Gain Max Power Dissipation Power - Max Number of Elements Configuration Case Connection Gain Bandwidth Product Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2) Noise Figure (dB Typ @ f)
TK15A60U(STA4,Q,M) TK15A60U(STA4,Q,M) Toshiba Semiconductor and Storage 1.6039
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0.00000000 download 12 Weeks Through Hole Tube 2009 DTMOSII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 1 40W TO-220SIS 40W Tc 15A N-Channel 300mOhm @ 7.5A, 10V 5V @ 1mA 950pF @ 10V 17nC @ 10V 37ns 8 ns 30V 15A Ta 600V 950pF 10V ±30V 300 mΩ
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 850.995985mg 150°C TJ MOSFET (Metal Oxide) 1 Single 10.5 ns 6.2mOhm 8-SOP Advance (5x5) 1.6W Ta 36W Tc 40A 19 ns N-Channel 4mOhm @ 20A, 10V 2.3V @ 200μA 1400pF @ 15V 14.8nC @ 10V 4.5ns 3.5 ns 20V 30V 40A Tc 30V 1.4nF 4.5V 10V ±20V 4 mΩ
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant Silver, Tin 3 SC-70, SOT-323 Surface Mount 125°C TJ 100mW 100mW 120V 100mA 120V 300mV NPN 100nA ICBO 120V 5V 200 @ 2mA 6V 300mV @ 1mA, 10mA 100MHz
TK040N65Z,S1F TK040N65Z,S1F Toshiba Semiconductor and Storage 9.8030
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0.00000000 16 Weeks Active Not Applicable RoHS Compliant TO-247-3 Through Hole 150°C MOSFET (Metal Oxide) 360W Tc N-Channel 40m Ω @ 28.5A, 10V 4V @ 2.85mA 6250pF @ 300V 105nC @ 10V 57A Ta 650V 10V ±30V
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 10μA ICBO 40V 2A 500 @ 400mA 1V 500mV @ 1mA, 300mA 220MHz
TBC847B,LM TBC847B,LM Toshiba Semiconductor and Storage 0.1414
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2016 Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C TJ 320mW 320mW 50V SOT-23 150mA 50V 400mV NPN 30nA ICBO 50V 150mA 200 @ 2mA 5V 400mV @ 100mA, 5mA 100MHz
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVII Active 1 (Unlimited) RoHS Compliant SC-101, SOT-883 Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta P-Channel 500m Ω @ 500mA, 4.5V 1V @ 1mA 48pF @ 10V 700mA Ta 20V 1.2V 4.5V ±10V
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0.00000000 download 16 Weeks Through Hole Tube 2015 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-247-3 Through Hole 150°C TJ MOSFET (Metal Oxide) TO-247 165W Tc 20A N-Channel 175mOhm @ 10A, 10V 4.5V @ 1mA 1800pF @ 300V 55nC @ 10V 20A Ta 600V 1.8nF 10V ±30V 175 mΩ
TPC8031-H(TE12LQM) TPC8031-H(TE12LQM) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1.9W 13.3mOhm 8-SOP (5.5x6.0) 11A N-Channel 13.3mOhm @ 5.5A, 10V 2.5V @ 1mA 2150pF @ 10V 21nC @ 10V 3ns 3.9 ns 20V 30V 11A Ta 30V 2.15nF 13.3 mΩ
TK6P65W,RQ TK6P65W,RQ Toshiba Semiconductor and Storage 1.1677
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0.00000000 16 Weeks Surface Mount Cut Tape (CT) 2015 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) 60W Tc 5.8A N-Channel 1.05 Ω @ 2.9A, 10V 3.5V @ 180μA 390pF @ 300V 11nC @ 10V 5.8A Ta 650V 10V ±30V
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2010 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) D-Pak 80W Tc 4A N-Channel 1.88Ohm @ 2A, 10V 4.4V @ 1mA 490pF @ 25V 11nC @ 10V 18ns 8 ns 30V 4A Ta 550V 490pF 10V ±30V 1.88 Ω
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) EAR99 RoHS Compliant TO-243AA Surface Mount 150°C TJ YES Other Transistors 10.5dB 1.6W Single NPN 1.6W NPN 5500MHz 5.3V 100mA 200 @ 30mA 5V 7.7GHz 1.45dB @ 1GHz
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant TO-243AA unknown Surface Mount 150°C TJ Other Transistors 16.5dB 1.8W 1.8W Single NPN 12V 80mA 12V NPN 5000MHz 100 @ 50mA 5V 7GHz 1.45dB @ 1GHz
SSM3K72KCT,L3F SSM3K72KCT,L3F Toshiba Semiconductor and Storage 0.3495
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2016 U-MOSVII-H Active 1 (Unlimited) RoHS Compliant SC-101, SOT-883 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 500mW Ta 400mA N-Channel 1.5 Ω @ 100mA, 10V 2.1V @ 250μA 40pF @ 10V 0.6nC @ 4.5V 400mA Ta 60V 4.5V 10V ±20V
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0.00000000 download Bulk 2010 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD PNP 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
TPCA8055-H,LQ(M TPCA8055-H,LQ(M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 U-MOSVII-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 8-SOP Advance (5x5) 1.6W Ta 70W Tc 56A N-Channel 1.9mOhm @ 28A, 10V 2.3V @ 1mA 7700pF @ 10V 91nC @ 10V 5.7ns 11 ns 20V 56A Ta 30V 7.7nF 4.5V 10V ±20V 1.9 mΩ
TK8P60W,RVQ TK8P60W,RVQ Toshiba Semiconductor and Storage 1.6505
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2014 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) Single 420mOhm DPAK 80W Tc 8A 70 ns N-Channel 500mOhm @ 4A, 10V 3.7V @ 400μA 570pF @ 300V 18.5nC @ 10V 20ns 5.5 ns 30V 600V Super Junction 8A Ta 600V 570pF 10V ±30V 500 mΩ
SSM6L35FU(TE85L,F) SSM6L35FU(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2015 Discontinued 1 (Unlimited) EAR99 RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount -55°C~150°C TJ ENHANCEMENT MODE 2 Other Transistors 200mW N-CHANNEL AND P-CHANNEL Dual 175 ns 100mA METAL-OXIDE SEMICONDUCTOR 251 ns N and P-Channel 3 Ω @ 50mA, 4V 1V @ 1mA 9.5pF @ 3V -1V Logic Level Gate, 1.2V Drive 0.18A 180mA 100mA 20V
SSM6P35AFU,LF SSM6P35AFU,LF Toshiba Semiconductor and Storage 0.2458
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVII Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 150°C 285mW Ta 2 P-Channel (Dual) 1.4 Ω @ 150mA, 4.5V 1V @ 100μA 42pF @ 10V Logic Level Gate, 1.2V Drive 250mA Ta 20V
TK100E08N1,S1X TK100E08N1,S1X Toshiba Semiconductor and Storage 2.3255
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 9nF 255W Tc 100A N-Channel 3.2m Ω @ 50A, 10V 4V @ 1mA 9000pF @ 40V 130nC @ 10V 100A Ta 80V 10V ±20V
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 150°C 285mW Ta 2 N-Channel (Dual) 1.1 Ω @ 150mA, 4.5V 1V @ 100μA 36pF @ 10V 0.34nC @ 4.5V Standard 250mA Ta 20V
2SD2206(TE6,F,M) 2SD2206(TE6,F,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Through Hole Bulk 2009 Obsolete 1 (Unlimited) Non-RoHS Compliant No 3 TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW Single 100V NPN 10μA ICBO 2A 100V 2000 @ 1A 2V 1.5V @ 1mA, 1A 100MHz
TK31J60W5,S1VQ TK31J60W5,S1VQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 3nF Single 230W 73mOhm TO-3P(N) 230W Tc 30.8A 165 ns N-Channel 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 3000pF @ 300V 105nC @ 10V 32ns 8.5 ns 30V 600V Super Junction 30.8A Ta 600V 3nF 10V ±30V 88 mΩ
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0.00000000 52 Weeks Tube 2013 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole MOSFET (Metal Oxide) TO-220 30W Tc N-Channel 380mOhm @ 4.9A, 10V 3.7V @ 500μA 720pF @ 300V 20nC @ 10V 9.7A Ta 600V 10V ±30V
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0.00000000 download Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 4-XFLGA Surface Mount 150°C TJ TPC*202 500mW 2 N-Channel (Half Bridge) 1.2V @ 200μA 780pF @ 10V Standard
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
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0.00000000 16 Weeks Surface Mount Cut Tape (CT) 2009 Active 1 (Unlimited) EAR99 RoHS Compliant Silver, Tin 3 SC-70, SOT-323 unknown 30MHz Surface Mount 125°C TJ Other Transistors 100mW 1 30MHz NPN Single 100mW 20V 300mA 20V 20V NPN 100nA ICBO 42mV 50V 25V 200 350 @ 4mA 2V 100mV @ 3mA, 30A
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8-PowerVDFN Surface Mount 150°C MOSFET (Metal Oxide) 2.5W Ta 67W Tc N-Channel 4.1m Ω @ 35A, 10V 2.5V @ 1mA 6.3nF @ 50V 75nC @ 10V 92A Ta 70A Tc 100V 4.5V 10V ±20V
2SJ360(TE12L,F) 2SJ360(TE12L,F) Toshiba Semiconductor and Storage 0.1514
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant No 4 TO-243AA Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE FLAT 3 R-PSSO-F3 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.5W 500mW Ta 1A SWITCHING 60V SILICON P-Channel 730m Ω @ 500mA, 10V 2V @ 1mA 155pF @ 10V 6.5nC @ 10V 17ns 20 ns 20V 1A 1A Ta 60V 4V 10V ±20V
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SC-101, SOT-883 Surface Mount BIP General Purpose Small Signal 100mW 100mW 1 PNP 50V 80mA 50V 150mV SILICON PNP - Pre-Biased 500nA 80 @ 10mA 5V 150mV @ 250μA, 5mA 4.7 k Ω 47 k Ω
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