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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Radiation Hardening Number of Pins Package / Case Reach Compliance Code Height Width Mfr Mounting Type Weight Operating Temperature Technology Operating Mode Capacitance Terminal Form Base Part Number JESD-30 Code Number of Channels Max Power Dissipation Power - Max Number of Elements Configuration JEDEC-95 Code Case Connection Gain Bandwidth Product Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
TK39J60W5,S1VQ TK39J60W5,S1VQ Toshiba Semiconductor and Storage 12.9028
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 4.1nF Single 270W 55mOhm TO-3P(N) 270W Tc 38.8A 200 ns N-Channel 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 4100pF @ 300V 135nC @ 10V 50ns 9 ns 30V 600V Super Junction 38.8A Ta 600V 4.1nF 10V ±30V 65 mΩ
SSM3J351R,LF SSM3J351R,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) 2016 U-MOSVI Active 1 (Unlimited) RoHS Compliant SOT-23-3 Flat Leads Surface Mount 150°C MOSFET (Metal Oxide) 2W Ta P-Channel 134m Ω @ 1A, 10V 2V @ 1mA 660pF @ 10V 15.1nC @ 10V 3.5A Ta 60V 4V 10V +10V, -20V
TPWR8503NL,L1Q TPWR8503NL,L1Q Toshiba Semiconductor and Storage 1.2201
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2015 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 800mW Ta 142W Tc 150A N-Channel 0.85m Ω @ 50A, 10V 2.3V @ 1mA 6900pF @ 15V 74nC @ 10V 150A Tc 30V 4.5V 10V ±20V
2SA949-Y,ONK-1F(J 2SA949-Y,ONK-1F(J Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 800mW PNP 100nA ICBO 150V 50mA 70 @ 10mA 5V 800mV @ 1mA, 10A 120MHz
TK40P04M1(T6RSS-Q) TK40P04M1(T6RSS-Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount, Through Hole Tape & Reel (TR) 2009 U-MOSVI-H Active 1 (Unlimited) 2 10mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3mm 6.1mm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING R-PSSO-G2 1 1 DRAIN Single 47W 27 ns 47W Tc 40A SWITCHING 63 ns SILICON N-Channel 11m Ω @ 20A, 10V 2.3V @ 200μA 1920pF @ 10V 29nC @ 10V 20ns 18 ns 20V 40V 40A Ta 4.5V 10V ±20V
T2N7002AK,LM T2N7002AK,LM Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 1998 U-MOSVII-H Active 1 (Unlimited) 150°C RoHS Compliant TO-236-3, SC-59, SOT-23-3 1.1mm Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 320mW 2 ns 1.1V 2.8Ohm SOT-23 320mW Ta 200mA 150°C 7 ns N-Channel 3.9Ohm @ 100mA, 10V 2.1V @ 250μA 17pF @ 10V 0.35nC @ 4.5V 20V 60V 200mA Ta 60V 17pF 4.5V 10V ±20V 3.9 Ω
RN2109,LF(CT RN2109,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant SC-75, SOT-416 Surface Mount 100mW PNP - Pre-Biased 500nA 50V 100mA 70 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 47 k Ω 22 k Ω
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2016 Active 1 (Unlimited) 6 RoHS Compliant 6-WDFN Exposed Pad Surface Mount -55°C~150°C TJ ENHANCEMENT MODE NO LEAD S-PDSO-N6 2W 2W 2 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE DRAIN 4A SWITCHING 0.033Ohm 20V METAL-OXIDE SEMICONDUCTOR SILICON 2 N-Channel (Dual) 33m Ω @ 4A, 4.5V 1V @ 1mA 410pF @ 10V 3.6nC @ 4.5V Logic Level Gate, 1.5V Drive 4A 20V
RN2103MFV,L3XHF(CT RN2103MFV,L3XHF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 SOT-723 Toshiba Semiconductor and Storage Surface Mount 150 mW VESM PNP - Pre-Biased 500nA 50 V 100 mA 70 @ 10mA, 5V 300mV @ 500μA, 5mA 250 MHz 22 kOhms 22 kOhms
TK14C65W,S1Q TK14C65W,S1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Through Hole Tube 2015 DTMOSIV Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole 2.387001g 150°C TJ MOSFET (Metal Oxide) 1 Single 60 ns 220mOhm I2PAK 130W Tc 13.7A 110 ns N-Channel 250mOhm @ 6.9A, 10V 3.5V @ 690μA 1300pF @ 300V 35nC @ 10V 20ns 7 ns 30V 13.7A Ta 650V 1.3nF 10V ±30V 250 mΩ
TPCL4201(TE85L,F) TPCL4201(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) RoHS Compliant No 4 4-XFLGA Surface Mount 150°C TJ TPC*201 500mW 2 N-Channel (Half Bridge) 1.2V @ 200μA 720pF @ 10V 85ns 250 ns 12V Standard
2SC2383-O,T6ALPF(M 2SC2383-O,T6ALPF(M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW NPN 1μA ICBO 160V 1A 60 @ 200mA 5V 1.5V @ 50mA, 500mA 100MHz
RN2108(T5L,F,T) RN2108(T5L,F,T) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SC-75, SOT-416 Surface Mount 100mW 100mW 50V SSM 100mA 50V 300mV PNP - Pre-Biased 500nA 50V 100mA 80 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 22 kOhms 47 kOhms
TPC8066-H,LQ(S TPC8066-H,LQ(S Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVII-H Active 1 (Unlimited) RoHS Compliant No 8 8-SOIC (0.154, 3.90mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1W Ta 11A N-Channel 16m Ω @ 5.5A, 10V 2.3V @ 100μA 1100pF @ 10V 15nC @ 10V 2.1ns 2.3 ns 20V 11A Ta 30V 4.5V 10V ±20V
2SC2655-Y(T6OMI,FM 2SC2655-Y(T6OMI,FM Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
2SC2235-Y(T6FJT,FM 2SC2235-Y(T6FJT,FM Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
2SC3074-O(Q) 2SC3074-O(Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tube 2010 Obsolete 1 (Unlimited) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 unknown Surface Mount 150°C TJ 1W 120MHz Single 5A 50V 400mV NPN 1μA ICBO 5A 60V 5V 70 @ 1A 1V 400mV @ 150mA, 3A
2SK2035(T5L,F,T) 2SK2035(T5L,F,T) Toshiba Semiconductor and Storage 11.9365
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0.00000000 Surface Mount Cut Tape (CT) 2009 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 SC-75, SOT-416 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 100mW SSM 100mW Ta 100mA N-Channel 12Ohm @ 10mA, 2.5V 8.5pF @ 3V 10V 100mA Ta 20V 8.5pF 2.5V 10V 12 Ω
2SC4116SU-Y,LF 2SC4116SU-Y,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) 2009 Discontinued 1 (Unlimited) RoHS Compliant SC-70, SOT-323 Surface Mount 125°C TJ 2SC4116 100mW 100mW 80MHz 50V 150mA 50V 250mV NPN 100nA ICBO 5V 70 70 @ 2mA 6V 250mV @ 10mA, 100mA
2SC3668-Y,T2WNLF(J 2SC3668-Y,T2WNLF(J Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) SC-71 Through Hole 150°C TJ 1W NPN 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
2SA965-Y,T6KOJPF(J 2SA965-Y,T6KOJPF(J Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW PNP 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
2SC2655-Y(T6TOJ,FM 2SC2655-Y(T6TOJ,FM Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
SSM3J327R,LF SSM3J327R,LF Toshiba Semiconductor and Storage 0.2934
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant SOT-23-3 Flat Leads Surface Mount 150°C TJ MOSFET (Metal Oxide) 1W Ta 3.9A P-Channel 93m Ω @ 1.5A, 4.5V 1V @ 1mA 290pF @ 10V 4.6nC @ 4.5V 3.9A Ta 20V 1.5V 4.5V ±8V
TK34A10N1,S4X TK34A10N1,S4X Toshiba Semiconductor and Storage 1.3041
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H yes Active 1 (Unlimited) 3 RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 1 TO-220AB ISOLATED Single 31 ns 35W Tc 34A SWITCHING 0.0095Ohm 50 ns SILICON N-Channel 9.5m Ω @ 17A, 10V 4V @ 500μA 2600pF @ 50V 38nC @ 10V 12ns 18 ns 20V 75A 34A Tc 100V 64 mJ 10V ±20V
RN1405,LF RN1405,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) EAR99 150°C -55°C RoHS Compliant No 3 TO-236-3, SC-59, SOT-23-3 Surface Mount RN140* 200mW Single 50V NPN - Pre-Biased 500nA 100mA 80 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 2.2 k Ω 47 k Ω
TK13A55DA(STA4,QM) TK13A55DA(STA4,QM) Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2011 π-MOSVII Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 45W Tc 12.5A N-Channel 480m Ω @ 6.3A, 10V 4V @ 1mA 1800pF @ 25V 38nC @ 10V 40ns 15 ns 30V 12.5A Ta 550V 10V ±30V
TK10S04K3L(T6L1,NQ TK10S04K3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSIV Active 1 (Unlimited) 175°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) DPAK+ 25W Tc 10A N-Channel 28mOhm @ 5A, 10V 3V @ 1mA 410pF @ 10V 10nC @ 10V 7ns 4 ns 20V 10A Ta 40V 410pF 6V 10V ±20V 28 mΩ
TK4P50D(T6RSS-Q) TK4P50D(T6RSS-Q) Toshiba Semiconductor and Storage 0.1041
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2010 π-MOSVII Active 1 (Unlimited) RoHS Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 80W 80W Tc 4A N-Channel 2 Ω @ 2A, 10V 4.4V @ 1mA 380pF @ 25V 9nC @ 10V 15ns 7 ns 30V 4A Ta 500V 10V ±30V
2SC2229-Y(SHP,F,M) 2SC2229-Y(SHP,F,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 800mW TO-92MOD NPN 100nA ICBO 150V 50mA 70 @ 10mA 5V 500mV @ 1mA, 10mA 120MHz
SSM6N55NU,LF SSM6N55NU,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2017 yes Discontinued 1 (Unlimited) RoHS Compliant 6 6-WDFN Exposed Pad Surface Mount 150°C TJ 1W 2 Single 1W 4A 2 N-Channel (Dual) 46m Ω @ 4A, 10V 2.5V @ 100μA 280pF @ 15V 2.5nC @ 4.5V 20V 30V Logic Level Gate 30V
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