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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Contact Plating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Frequency Height Width Impedance Resistance Mounting Type Weight Operating Temperature Technology Operating Mode Capacitance Terminal Position Terminal Form Base Part Number JESD-30 Code Number of Channels Subcategory Max Power Dissipation Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Polarity Forward Current Tolerance Case Connection Gain Bandwidth Product Element Configuration Voltage Tolerance Power Dissipation Turn On Delay Time Max Reverse Leakage Current Test Current Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Zener Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Impedance-Max Zener Current DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
2SA1162-GR,LF 2SA1162-GR,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2011 Active 1 (Unlimited) EAR99 RoHS Compliant TO-236-3, SC-59, SOT-23-3 unknown Surface Mount 7.994566mg 125°C TJ 2SA1162 150mW 150mW 80MHz Single 50V 150mA 50V 50V PNP 100nA ICBO 100mV 50V 5V 70 200 @ 2mA 6V 300mV @ 10mA, 100mA
TK35A65W,S5X TK35A65W,S5X Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) 1 Single 70 ns 50W Tc 35A 150 ns N-Channel 80m Ω @ 17.5A, 10V 3.5V @ 2.1mA 4100pF @ 300V 100nC @ 10V 30ns 8 ns 30V 35A Ta 650V 10V ±30V
TK12A60W,S4VX TK12A60W,S4VX Toshiba Semiconductor and Storage 0.2855
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 890pF 35W 35W Tc 11.5A 85 ns N-Channel 300m Ω @ 5.8A, 10V 3.7V @ 600μA 890pF @ 300V 25nC @ 10V 23ns 5.5 ns 30V 600V Super Junction 11.5A Ta 10V ±30V
TK4R3A06PL,S4X TK4R3A06PL,S4X Toshiba Semiconductor and Storage 1.0747
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0.00000000 12 Weeks Tube 2016 U-MOSIX-H Active Not Applicable RoHS Compliant TO-220-3 Full Pack Through Hole 175°C TJ MOSFET (Metal Oxide) TO-220SIS 36W Tc N-Channel 7.2mOhm @ 15A, 4.5V 2.5V @ 500μA 3280pF @ 30V 48.2nC @ 10V 68A Tc 60V 4.5V 10V ±20V
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) Non-RoHS Compliant TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole 150°C TJ 2W TO-220NIS PNP 1μA ICBO 50V 5A 100 @ 1A 1V 400mV @ 200mA, 2A 60MHz
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0.00000000 download Tube 2009 Obsolete 1 (Unlimited) RoHS Compliant TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 90W Tc N-Channel 270m Ω @ 10A, 10V 4V @ 1mA 3720pF @ 10V 80nC @ 10V 18A Ta 500V 10V ±30V
1SS193,LF 1SS193,LF Toshiba Semiconductor and Storage 0.1661
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 yes Active 1 (Unlimited) 3 125°C -55°C RoHS Compliant 3 TO-236-3, SC-59, SOT-23-3 unknown Surface Mount DUAL GULL WING 1SS193 AEC-Q101 SILICON 1 Standard 0.1A 100mA Single Small Signal =< 200mA (Io), Any Speed 500nA @ 80V 1.2V @ 100mA 125°C Max 80V 100mA 85V 2A 4 ns 0.15W 3pF @ 0V 1MHz
TK6A65W,S5X TK6A65W,S5X Toshiba Semiconductor and Storage 6.7410
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0.00000000 16 Weeks Through Hole Tube 2015 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 30W Tc 5.8A N-Channel 1Ohm @ 2.9A, 10V 3.5V @ 180μA 390pF @ 300V 11nC @ 10V 5.8A Ta 650V 390pF 10V ±30V 1 Ω
TK25E06K3,S1X(S TK25E06K3,S1X(S Toshiba Semiconductor and Storage 3.7468
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0.00000000 download 12 Weeks Through Hole Tube 2009 U-MOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 60W 14Ohm TO-220-3 60W Tc 25A N-Channel 18mOhm @ 12.5A, 10V 29nC @ 10V 60V 25A Ta 60V 18 mΩ
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
2SC6026MFVGR,L3F 2SC6026MFVGR,L3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 Active 1 (Unlimited) 1.2mm RoHS Compliant Silver, Tin SOT-723 500μm 800μm Surface Mount 150°C TJ 150mW 60MHz 50V 150mA 50V 50V NPN 100nA ICBO 150mV 150mA 60V 5V 120 200 @ 2mA 6V 250mV @ 10mA, 100mA
TK46A08N1,S4X TK46A08N1,S4X Toshiba Semiconductor and Storage 0.8632
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H Active 1 (Unlimited) EAR99 RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power Single 30 ns 35W Tc 46A 51 ns N-Channel 8.4m Ω @ 23A, 10V 4V @ 500μA 2500pF @ 40V 37nC @ 10V 11ns 17 ns 20V 80V 80A 46A Tc 10V ±20V
TJ30S06M3L(T6L1,NQ TJ30S06M3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 68W Tc 30A SWITCHING 0.028Ohm 60V SILICON P-Channel 21.8m Ω @ 15A, 10V 3V @ 1mA 3950pF @ 10V 80nC @ 10V 43ns 118 ns 10V 30A Ta 60V 60A 71 mJ 6V 10V +10V, -20V
TK8Q60W,S1VQ TK8Q60W,S1VQ Toshiba Semiconductor and Storage 2.7406
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0.00000000 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant 3 TO-251-3 Stub Leads, IPak 500mOhm Through Hole 150°C TJ MOSFET (Metal Oxide) 570pF Single 420mOhm I-PAK 80W Tc 8A 70 ns N-Channel 500mOhm @ 4A, 10V 3.7V @ 400μA 570pF @ 300V 18.5nC @ 10V 20ns 5.5 ns 30V Super Junction 8A Ta 600V 570pF 10V ±30V 500 mΩ
CRZ12(TE85L,Q,M) CRZ12(TE85L,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) RoHS Compliant No 2 SOD-123F 30Ohm Surface Mount -40°C~150°C TJ 700mW ±10% Single 700mW 10μA 10μA @ 8V 1V @ 200mA 12V 30Ohm 10mA
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 960mW Ta 170W Tc N-Channel 1.28m Ω @ 50A, 10V 2.5V @ 1mA 8100pF @ 30V 91nC @ 10V 100A Tc 60V 4.5V 10V ±20V
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0.00000000 Surface Mount Cut Tape (CT) 2009 Obsolete 1 (Unlimited) RoHS Compliant 3 SC-101, SOT-883 unknown Surface Mount 150°C TJ 100mW 100mW 80MHz Single 50V 100mA 50V 300mV PNP 100nA ICBO -50V -5V 120 120 @ 2mA 6V 300mV @ 10mA, 100mA
CRY91(TE85L,Q,M) CRY91(TE85L,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) RoHS Compliant Silver, Tin 2 SOD-123F 30Ohm Surface Mount -40°C~150°C 700mW ±10% Single 10% 700mW 10μA 10mA 10μA @ 5.5V 1V @ 200mA 9.1V 30Ohm
2SA1313-Y,LF 2SA1313-Y,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) 150°C -55°C 2.9mm RoHS Compliant TO-236-3, SC-59, SOT-23-3 1.1mm 1.5mm Surface Mount 150°C TJ 200mW 200mW PNP 200MHz 50V S-Mini 500mA 50V 250mV PNP 100nA ICBO -100mV 50V 500mA -500mA -50V -5V 25 120 @ 100mA 1V 250mV @ 10mA, 100mA 200MHz
2SA1020-Y(T6CANOAF 2SA1020-Y(T6CANOAF Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2010 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD PNP 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
2SC2713-BL,LF 2SC2713-BL,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 yes Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 125°C TJ 150mW 150mW 120V 100mA 120V 300mV NPN 100nA ICBO 350 @ 2mA 6V 300mV @ 1mA, 10mA 100MHz
2SC3324-BL(TE85L,F 2SC3324-BL(TE85L,F Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2009 Discontinued 1 (Unlimited) RoHS Compliant No 3 TO-236-3, SC-59, SOT-23-3 100MHz Surface Mount 125°C TJ 150mW 1 100MHz Single 150mW 120V 100mA 120V 300mV NPN 100nA ICBO 300mV 120V 5V 200 350 @ 2mA 6V 300mV @ 1mA, 10mA
2SC2229-Y,F(J 2SC2229-Y,F(J Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 800mW TO-92MOD NPN 100nA ICBO 150V 50mA 70 @ 10mA 5V 500mV @ 1mA, 10mA 120MHz
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0.00000000 download Bulk 2007 yes Obsolete 1 (Unlimited) TO-220-3 Full Pack unknown Through Hole 150°C TJ 2W NPN 5μA ICBO 180V 2A 100 @ 100mA 5V 1V @ 100mA, 1A 200MHz
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
2SA1931,KEHINQ(M 2SA1931,KEHINQ(M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole 150°C TJ 2W TO-220NIS PNP 1μA ICBO 50V 5A 100 @ 1A 1V 400mV @ 200mA, 2A 60MHz
SSM3J375F,LF SSM3J375F,LF Toshiba Semiconductor and Storage 0.3180
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C MOSFET (Metal Oxide) 600mW Ta P-Channel 150m Ω @ 1A, 4.5V 1V @ 1mA 270pF @ 10V 4.6nC @ 4.5V 2A Ta 20V 1.5V 4.5V +6V, -8V
TK4P55D(T6RSS-Q) TK4P55D(T6RSS-Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2010 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) D-Pak 80W Tc 4A N-Channel 1.88Ohm @ 2A, 10V 4.4V @ 1mA 490pF @ 25V 11nC @ 10V 18ns 8 ns 30V 4A Ta 550V 490pF 10V ±30V 1.88 Ω
TK50E06K3(S1SS-Q) TK50E06K3(S1SS-Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Through Hole Tube 2016 U-MOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole
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