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Discrete Semiconductors

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Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Height Width Mounting Type Weight Operating Temperature Technology Operating Mode HTS Code Terminal Position Terminal Form Base Part Number Pin Count JESD-30 Code Number of Channels Subcategory Max Power Dissipation Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Forward Current Forward Voltage Case Connection Gain Bandwidth Product Polarity/Channel Type Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage (DC) Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
TPN11006NL,LQ TPN11006NL,LQ Toshiba Semiconductor and Storage 0.9061
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 11 ns 700mW Ta 30W Tc 17A 27 ns N-Channel 11.4m Ω @ 8.5A, 10V 2.5V @ 200μA 2000pF @ 30V 23nC @ 10V 4ns 7.1 ns 20V 60V 17A Tc 4.5V 10V ±20V
1SS403,H3F 1SS403,H3F Toshiba Semiconductor and Storage 0.1973
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2008 Active 1 (Unlimited) 2 EAR99 125°C -55°C 1.7mm RoHS Compliant Silver, Tin 2 SC-76, SOD-323 900μm 1.25mm Surface Mount 32.998845mg 8541.10.00.70 DUAL GULL WING 1SS403 200mW AEC-Q101 SILICON 1 Standard 0.1A 300mA 1.2V 2A Single Small Signal =< 200mA (Io), Any Speed 1μA @ 200V 1.2V @ 100mA 125°C Max 200V 100mA 1μA 250V 2A 60 ns 200V 3pF @ 0V 1MHz
TPN2R304PL,L1Q TPN2R304PL,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2016 U-MOSIX-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 8-TSON Advance (3.3x3.3) 630mW Ta 104W Tc 80A N-Channel 2.3mOhm @ 40A, 10V 2.4V @ 0.3mA 3600pF @ 20V 41nC @ 10V 80A Tc 40V 3.6nF 4.5V 10V ±20V 2.3 mΩ
2SJ360(TE12L,F) 2SJ360(TE12L,F) Toshiba Semiconductor and Storage 0.1514
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant No 4 TO-243AA Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE FLAT 3 R-PSSO-F3 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.5W 500mW Ta 1A SWITCHING 60V SILICON P-Channel 730m Ω @ 500mA, 10V 2V @ 1mA 155pF @ 10V 6.5nC @ 10V 17ns 20 ns 20V 1A 1A Ta 60V 4V 10V ±20V
TK12A60D(STA4,Q,M) TK12A60D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 45W Tc 12A N-Channel 550mOhm @ 6A, 10V 4V @ 1mA 1800pF @ 25V 38nC @ 10V 40ns 15 ns 30V 12A Ta 600V 1.8nF 10V ±30V 550 mΩ
TK14C65W5,S1Q TK14C65W5,S1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Through Hole Tube 2014 DTMOSIV Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole 2.387001g 150°C TJ MOSFET (Metal Oxide) 1 Single 90 ns 250mOhm I2PAK 130W Tc 13.7A 110 ns N-Channel 300mOhm @ 6.9A, 10V 4.5V @ 690μA 1300pF @ 300V 40nC @ 10V 40ns 7 ns 30V 650V 13.7A Ta 650V 1.3nF 10V ±30V 300 mΩ
SSM3J144TU,LF SSM3J144TU,LF Toshiba Semiconductor and Storage 0.1424
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant 3-SMD, Flat Lead Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta P-Channel 93m Ω @ 1.5A, 4.5V 1V @ 1mA 290pF @ 10V 4.7nC @ 4.5V 3.2A Ta 20V 1.5V 4.5V +6V, -8V
SSM3J35CTC,L3F SSM3J35CTC,L3F Toshiba Semiconductor and Storage 0.2679
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2015 U-MOSVII Active 1 (Unlimited) RoHS Compliant SOT-1123 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) 500mW Ta 250mA P-Channel 1.4 Ω @ 150mA, 4.5V 1V @ 100μA 42pF @ 10V 250mA Ta 20V 1.2V 4.5V ±10V
2SC2229-Y(SAN2,F,M 2SC2229-Y(SAN2,F,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 800mW TO-92MOD NPN 100nA ICBO 150V 50mA 70 @ 10mA 5V 500mV @ 1mA, 10mA 120MHz
TK32E12N1,S1X TK32E12N1,S1X Toshiba Semiconductor and Storage 0.5788
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) Single 98W 98W Tc 60A 43 ns N-Channel 13.8m Ω @ 16A, 10V 4V @ 500μA 2000pF @ 60V 34nC @ 10V 14ns 14 ns 20V 120V 60A Tc 10V ±20V
2SA1162-O,LF 2SA1162-O,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 yes Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 unknown Surface Mount 125°C TJ 150mW 150mW 80MHz 50V 150mA 50V 300mV PNP 100nA ICBO -300mV -150mA -50V -5V 200 @ 2mA 6V 300mV @ 10mA, 100mA
SSM3K7002KFU,LF SSM3K7002KFU,LF Toshiba Semiconductor and Storage 0.1879
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0.00000000 12 Weeks Tape & Reel (TR) 2016 U-MOSVII-H Active 1 (Unlimited) RoHS Compliant SC-70, SOT-323 Surface Mount 150°C MOSFET (Metal Oxide) 150mW Ta N-Channel 1.5 Ω @ 100mA, 10V 2.1V @ 250μA 40pF @ 10V 0.6nC @ 4.5V 400mA Ta 60V 4.5V 10V ±20V
2SA1020-Y,F(J 2SA1020-Y,F(J Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW PNP 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
SSM3J56MFV,L3F SSM3J56MFV,L3F Toshiba Semiconductor and Storage 0.3589
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 U-MOSVI Active 1 (Unlimited) RoHS Compliant SOT-723 unknown 550μm Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 150mW 8 ns -300mV 150mW Ta -800mA 26 ns P-Channel 390m Ω @ 800mA, 4.5V 100pF @ 10V 8V -20V 800mA Ta 20V 1.2V 4.5V ±8V
TK1K7A60F,S4X TK1K7A60F,S4X Toshiba Semiconductor and Storage 0.7346
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0.00000000 download 12 Weeks Active 1 (Unlimited)
TJ15S06M3L(T6L1,NQ TJ15S06M3L(T6L1,NQ Toshiba Semiconductor and Storage 3.8946
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 41W Tc 15A SWITCHING 60V SILICON P-Channel 50m Ω @ 7.5A, 10V 3V @ 1mA 1770pF @ 10V 36nC @ 10V 13ns 62 ns 10V 15A Ta 60V 29 mJ 6V 10V +10V, -20V
TK16A45D(STA4,Q,M) TK16A45D(STA4,Q,M) Toshiba Semiconductor and Storage 10.9808
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0.00000000 download 16 Weeks Through Hole Tube 2009 Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Full Pack Through Hole MOSFET (Metal Oxide) TO-220SIS 16A N-Channel 270mOhm @ 8A, 10V 16A 450V 270 mΩ
2SC4738-Y,LF 2SC4738-Y,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2004 Active 1 (Unlimited) RoHS Compliant Silver, Tin 3 SC-75, SOT-416 Surface Mount 125°C TJ 100mW 100mW 50V 150mA 50V 250mV NPN 100nA ICBO 60V 5V 120 @ 2mA 6V 250mV @ 10mA, 100mA 80MHz
TPC6011(TE85L,F,M) TPC6011(TE85L,F,M) Toshiba Semiconductor and Storage 0.3342
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 6 SOT-23-6 Thin, TSOT-23-6 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 2.2W VS-6 (2.9x2.8) 700mW Ta 6A N-Channel 20mOhm @ 3A, 10V 2.5V @ 1mA 640pF @ 10V 14nC @ 10V 5.8ns 8 ns 20V 6A Ta 30V 640pF 4.5V 10V ±20V 20 mΩ
SSM6K514NU,LF SSM6K514NU,LF Toshiba Semiconductor and Storage 1.3659
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0.00000000 12 Weeks Tape & Reel (TR) 2016 U-MOSIX-H Active 1 (Unlimited) RoHS Compliant 6-WDFN Exposed Pad unknown Surface Mount 150°C MOSFET (Metal Oxide) 2.5W Ta N-Channel 11.6m Ω @ 4A, 10V 2.4V @ 100μA 1110pF @ 20V 7.5nC @ 4.5V 12A Ta 40V 4.5V 10V ±20V
SSM6K217FE,LF SSM6K217FE,LF Toshiba Semiconductor and Storage 0.3055
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSVII-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant 6 SOT-563, SOT-666 Surface Mount 150°C TJ MOSFET (Metal Oxide) 13 ns ES6 500mW Ta 1.8A 8 ns N-Channel 195mOhm @ 1A, 8V 1.2V @ 1mA 130pF @ 10V 1.1nC @ 4.2V 12V 1.8A Ta 40V 130pF 1.8V 8V ±12V 195 mΩ
TK40E10K3,S1X(S TK40E10K3,S1X(S Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2009 U-MOSIV Active 1 (Unlimited) RoHS Compliant No TO-220-3 Through Hole MOSFET (Metal Oxide) 147W 1 147W 40A N-Channel 15m Ω @ 20A, 10V 4V @ 1mA 4000pF @ 10V 84nC @ 10V 40A Ta 100V
TK20P04M1,RQ(S TK20P04M1,RQ(S Toshiba Semiconductor and Storage 2.1649
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0.00000000 download 16 Weeks Surface Mount, Through Hole Tape & Reel (TR) 2008 U-MOSVI-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) DPAK 27W Tc 20A N-Channel 29mOhm @ 10A, 10V 2.3V @ 100μA 985pF @ 10V 15nC @ 10V 2.7ns 5.1 ns 20V 20A Ta 40V 985pF 4.5V 10V ±20V 29 mΩ
TK11A65W,S5X TK11A65W,S5X Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) 1 Single 45 ns 330mOhm TO-220SIS 35W Tc 11.1A 85 ns N-Channel 390mOhm @ 5.5A, 10V 3.5V @ 450μA 890pF @ 300V 25nC @ 10V 23ns 5.5 ns 30V 650V 11.1A Ta 650V 890pF 10V ±30V 390 mΩ
TPC8133,LQ(S TPC8133,LQ(S Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-SOIC (0.154, 3.90mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 8-SOP 1W Ta 9A P-Channel 15mOhm @ 4.5A, 10V 2V @ 500μA 2900pF @ 10V 64nC @ 10V 8ns 100 ns 20V 9A Ta 40V 2.9nF 4.5V 10V +20V, -25V 15 mΩ
SSM3J46CTB(TPL3) SSM3J46CTB(TPL3) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) RoHS Compliant No 3 3-SMD, No Lead Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Other Transistors 1W 1 Single 1W 2A P-Channel 103m Ω @ 1.5A, 4.5V 1V @ 1mA 290pF @ 10V 4.7nC @ 4.5V 8V 2A 2A Ta 20V 1.5V 4.5V ±8V
TK10E60W,S1VX TK10E60W,S1VX Toshiba Semiconductor and Storage 0.2229
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0.00000000 16 Weeks Through Hole Tube 2012 DTMOSIV Active Not Applicable RoHS Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) Single 100W 100W Tc 9.7A 75 ns N-Channel 380m Ω @ 4.9A, 10V 3.7V @ 500μA 700pF @ 300V 20nC @ 10V 22ns 5.5 ns 30V 600V Super Junction 9.7A Ta 10V ±30V
CLS03(TE16L,PSD,Q) CLS03(TE16L,PSD,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2013 Obsolete 1 (Unlimited) L-FLAT™ Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 60V 0.58V @ 10A -40°C~125°C 60V 10A DC 345pF @ 10V 1MHz
2SA1312GRTE85LF 2SA1312GRTE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 11 Weeks Surface Mount Cut Tape (CT) 2009 Discontinued 1 (Unlimited) 3 RoHS Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 Surface Mount 125°C TJ DUAL GULL WING Other Transistors 150mW 150mW 1 100MHz PNP Single 120V 100mA 120V 300mV AMPLIFIER SILICON PNP 100MHz 100nA ICBO -120V -5V 200 200 @ 2mA 6V 300mV @ 1mA, 10mA
TPCA8055-H,LQ(M TPCA8055-H,LQ(M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 U-MOSVII-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 8-SOP Advance (5x5) 1.6W Ta 70W Tc 56A N-Channel 1.9mOhm @ 28A, 10V 2.3V @ 1mA 7700pF @ 10V 91nC @ 10V 5.7ns 11 ns 20V 56A Ta 30V 7.7nF 4.5V 10V ±20V 1.9 mΩ
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