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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Terminal Position Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Surface Mount JESD-30 Code Number of Channels Subcategory Max Power Dissipation Power - Max Number of Elements Configuration Polarity Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Transistor Type Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
SSM5H90ATU,LF SSM5H90ATU,LF Toshiba Semiconductor and Storage 0.3140
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant 5-SMD, Flat Leads Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta N-Channel 65m Ω @ 1.5A, 4V 1.2V @ 1mA 200pF @ 10V 2.2nC @ 4V 2.4A Ta 20V 2.5V 4V ±10V
SSM3K17SU,LF SSM3K17SU,LF Toshiba Semiconductor and Storage 0.3110
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0.00000000 Surface Mount Tape & Reel (TR) Obsolete 1 (Unlimited) RoHS Compliant SC-70, SOT-323 Surface Mount MOSFET (Metal Oxide) 150mW 150mW Ta 100mA N-Channel 20 Ω @ 10mA, 4V 1.5V @ 1μA 7pF @ 3V 7V 50V 100mA Ta
2SK2231(TE16R1,NQ) 2SK2231(TE16R1,NQ) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount, Through Hole Tape & Reel (TR) 2007 Active 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free Silver, Tin 5A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ 60V MOSFET (Metal Oxide) 1 Single 20W 160mOhm PW-MOLD 20W Tc 5A 95 ns N-Channel 160mOhm @ 2.5A, 10V 2V @ 1mA 370pF @ 10V 12nC @ 10V 55ns 65 ns 20V 60V 5A Ta 60V 370pF 4V 10V ±20V 160 mΩ
TK20A60U(Q,M) TK20A60U(Q,M) Toshiba Semiconductor and Storage 25.5783
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0.00000000 download 52 Weeks Through Hole Tube 2009 DTMOSII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 1 Single 45W 190mOhm TO-220SIS 45W Tc 20A N-Channel 190mOhm @ 10A, 10V 5V @ 1mA 1470pF @ 10V 27nC @ 10V 40ns 12 ns 30V 600V 20A Ta 600V 1.47nF 10V ±30V 190 mΩ
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0.00000000 download 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C MOSFET (Metal Oxide) 1.2W Ta P-Channel 1.9 Ω @ 100mA, 4.5V 2V @ 1mA 82pF @ 10V 3nC @ 10V 400mA Ta 60V 4V 10V +20V, -16V
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2014 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) Single 420mOhm DPAK 80W Tc 8A 70 ns N-Channel 500mOhm @ 4A, 10V 3.7V @ 400μA 570pF @ 300V 18.5nC @ 10V 20ns 5.5 ns 30V 600V Super Junction 8A Ta 600V 570pF 10V ±30V 500 mΩ
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2016 U-MOSVII-H Active 1 (Unlimited) RoHS Compliant SC-101, SOT-883 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 500mW Ta 400mA N-Channel 1.5 Ω @ 100mA, 10V 2.1V @ 250μA 40pF @ 10V 0.6nC @ 4.5V 400mA Ta 60V 4.5V 10V ±20V
TTC008(Q) TTC008(Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 18 Weeks Through Hole Bulk 2010 Active 1 (Unlimited) RoHS Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA Through Hole 150°C TJ 1.1W 1 1.1W 1.5A 285V 1V NPN 10μA ICBO 600V 7V 80 @ 1mA 5V 1V @ 62.5mA, 500mA
TK5Q60W,S1VQ TK5Q60W,S1VQ Toshiba Semiconductor and Storage 9.3475
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0.00000000 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) RoHS Compliant 3 TO-251-3 Stub Leads, IPak 900mOhm Through Hole 150°C TJ MOSFET (Metal Oxide) Single 60W Tc 5.4A 50 ns N-Channel 900m Ω @ 2.7A, 10V 3.7V @ 270μA 380pF @ 300V 10.5nC @ 10V 18ns 7 ns 30V Super Junction 5.4A Ta 600V 10V ±30V
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) SC-71 Through Hole 150°C TJ 1W NPN 100μA ICBO 600V 1A 100 @ 100mA 5V 1V @ 75mA, 600mA
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 Active 1 (Unlimited) RoHS Compliant No 6 SOT-563, SOT-666 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Other Transistors Single 500mW 500mW Ta 2A P-Channel 130m Ω @ 1A, 4V 1V @ 1mA 335pF @ 10V 8V -20V 2A 2A Ta 20V 1.8V 4V ±8V
TK12A60U(Q,M) TK12A60U(Q,M) Toshiba Semiconductor and Storage 0.6509
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0.00000000 download 12 Weeks Through Hole Tube 2009 DTMOSII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) Single 35W 400mOhm TO-220SIS 35W Tc 12A N-Channel 400mOhm @ 6A, 10V 5V @ 1mA 720pF @ 10V 14nC @ 10V 30ns 8 ns 30V 600V 12A Ta 600V 720pF 10V ±30V 400 mΩ
TK065N65Z,S1F TK065N65Z,S1F Toshiba Semiconductor and Storage 6.0401
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0.00000000 16 Weeks Tube DTMOSVI Active 1 (Unlimited) RoHS Compliant TO-247-3 Through Hole 150°C MOSFET (Metal Oxide) 270W Tc N-Channel 65m Ω @ 19A, 10V 4V @ 1.69mA 3650pF @ 300V 62nC @ 10V 38A Ta 650V 10V ±30V
TK6P65W,RQ TK6P65W,RQ Toshiba Semiconductor and Storage 1.1677
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0.00000000 16 Weeks Surface Mount Cut Tape (CT) 2015 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) 60W Tc 5.8A N-Channel 1.05 Ω @ 2.9A, 10V 3.5V @ 180μA 390pF @ 300V 11nC @ 10V 5.8A Ta 650V 10V ±30V
TTC004B,Q TTC004B,Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tube Active 1 (Unlimited) RoHS Compliant TO-225AA, TO-126-3 Through Hole 150°C TJ 10W TO-126N NPN 100nA ICBO 160V 1.5A 140 @ 100mA 5V 500mV @ 50mA, 500mA 100MHz
RN1302,LF RN1302,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 Discontinued 1 (Unlimited) 150°C -55°C 2mm RoHS Compliant 3 SC-70, SOT-323 900μm 1.25mm Surface Mount 28.009329mg 100mW 100mW NPN Single 50V USM 100mA 50V 50V NPN - Pre-Biased 500nA 50V 100mA 100mA 50V 10V 50 50 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 10 kOhms 10 kOhms
TK6Q65W,S1Q TK6Q65W,S1Q Toshiba Semiconductor and Storage 2.6221
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0.00000000 16 Weeks Through Hole Tube 2015 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-251-3 Stub Leads, IPak Through Hole 150°C TJ MOSFET (Metal Oxide) I-PAK 60W Tc 5.8A N-Channel 1.05Ohm @ 2.9A, 10V 3.5V @ 180μA 390pF @ 300V 11nC @ 10V 5.8A Ta 650V 390pF 10V ±30V 1.05 Ω
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD PNP 10μA ICBO 100V 2A 2000 @ 1A 2V 1.5V @ 1mA, 1A 50MHz
TK8Q65W,S1Q TK8Q65W,S1Q Toshiba Semiconductor and Storage 0.5804
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0.00000000 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-251-3 Stub Leads, IPak Through Hole 150°C TJ MOSFET (Metal Oxide) I-PAK 80W Tc 7.8A N-Channel 670mOhm @ 3.9A, 10V 3.5V @ 300μA 570pF @ 300V 16nC @ 10V 7.8A Ta 650V 570pF 10V ±30V 670 mΩ
TK290P60Y,RQ TK290P60Y,RQ Toshiba Semiconductor and Storage 1.0841
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0.00000000 16 Weeks Tape & Reel (TR) 2016 DTMOSV Active 1 (Unlimited) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 2.54mm Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 100W 65 ns 100W Tc 11.5A 150°C 170 ns N-Channel 290m Ω @ 5.8A, 10V 4V @ 450μA 730pF @ 300V 25nC @ 10V 30V 600V 11.5A Tc 10V ±30V
2SC2229-O(T6SHP1FM 2SC2229-O(T6SHP1FM Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 800mW TO-92MOD NPN 100nA ICBO 150V 50mA 70 @ 10mA 5V 500mV @ 1mA, 10mA 120MHz
TK7P60W,RVQ TK7P60W,RVQ Toshiba Semiconductor and Storage 1.0945
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2014 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) Single 60W 60W Tc 7A 55 ns N-Channel 600m Ω @ 3.5A, 10V 3.7V @ 350μA 490pF @ 300V 15nC @ 10V 18ns 7 ns 30V 600V Super Junction 7A Ta 10V ±30V
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) 3 RoHS Compliant 3-SMD, Flat Lead Surface Mount 150°C MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F3 1 SINGLE WITH BUILT-IN DIODE 800mW Ta SWITCHING 0.79Ohm 30V SILICON P-Channel 390m Ω @ 500mA, 10V 1.8V @ 100μA 86pF @ 15V 1.1A 1.1A Ta 30V 4V 10V ±20V
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 10μA ICBO 60V 2A 2000 @ 1A 2V 1.5V @ 1mA, 1A 100MHz
SSM6J801R,LF SSM6J801R,LF Toshiba Semiconductor and Storage 0.3599
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0.00000000 12 Weeks Tape & Reel (TR) 2016 U-MOSVI Active 1 (Unlimited) RoHS Compliant 6-SMD, Flat Leads Surface Mount 150°C TJ MOSFET (Metal Oxide) 1.5W Ta P-Channel 32.5m Ω @ 3A, 4.5V 1V @ 1mA 840pF @ 10V 12.8nC @ 4.5V 6A Ta 20V 1.5V 4.5V +6V, -8V
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0.00000000 download 16 Weeks Through Hole Tube 2015 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-247-3 Through Hole 150°C TJ MOSFET (Metal Oxide) TO-247 165W Tc 20A N-Channel 175mOhm @ 10A, 10V 4.5V @ 1mA 1800pF @ 300V 55nC @ 10V 20A Ta 600V 1.8nF 10V ±30V 175 mΩ
SSM6K405TU,LF SSM6K405TU,LF Toshiba Semiconductor and Storage 0.3040
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant 6-SMD, Flat Leads Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta N-Channel 126m Ω @ 1A, 4V 1V @ 1mA 195pF @ 10V 3.4nC @ 4V 2A Ta 20V 1.5V 4V ±10V
TPC8048-H(TE12L,Q) TPC8048-H(TE12L,Q) Toshiba Semiconductor and Storage 6.3800
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0.00000000 download Surface Mount Cut Tape (CT) 2009 U-MOSVI-H Discontinued 1 (Unlimited) RoHS Compliant No 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 1.9W 1W Ta 16A N-Channel 6.9m Ω @ 8A, 10V 2.3V @ 1mA 7540pF @ 10V 87nC @ 10V 3.7ns 7.6 ns 20V 16A Ta 60V 4.5V 10V ±20V
TK60P03M1,RQ(S TK60P03M1,RQ(S Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) DPAK 63W Tc 60A N-Channel 6.4mOhm @ 30A, 10V 2.3V @ 500μA 2700pF @ 10V 40nC @ 10V 4.3ns 11 ns 20V 60A Ta 30V 2.7nF 4.5V 10V ±20V 6.4 mΩ
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