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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) JESD-30 Code Number of Channels Subcategory Max Power Dissipation Number of Elements Configuration Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
TK290P60Y,RQ TK290P60Y,RQ Toshiba Semiconductor and Storage 1.0841
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0.00000000 16 Weeks Tape & Reel (TR) 2016 DTMOSV Active 1 (Unlimited) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 2.54mm Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 100W 65 ns 100W Tc 11.5A 150°C 170 ns N-Channel 290m Ω @ 5.8A, 10V 4V @ 450μA 730pF @ 300V 25nC @ 10V 30V 600V 11.5A Tc 10V ±30V
TPCA8009-H(TE12L,Q TPCA8009-H(TE12L,Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 Obsolete 1 (Unlimited) RoHS Compliant Lead Free 7A 8 8-PowerVDFN unknown Surface Mount 150°C TJ 150V MOSFET (Metal Oxide) 1.6W Ta 45W Tc 7A N-Channel 350m Ω @ 3.5A, 10V 4V @ 1mA 600pF @ 10V 10nC @ 10V 7ns 7A Ta 10V ±20V
TPC8065-H,LQ(S TPC8065-H,LQ(S Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 U-MOSVII-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-SOIC (0.154, 3.90mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 8-SOP 1W Ta 13A N-Channel 11.6mOhm @ 6.5A, 10V 2.3V @ 200μA 1350pF @ 10V 20nC @ 10V 2.1ns 2.4 ns 20V 13A Ta 30V 1.35nF 4.5V 10V ±20V 11.6 mΩ
TK31J60W,S1VQ TK31J60W,S1VQ Toshiba Semiconductor and Storage 3.9321
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0.00000000 16 Weeks Through Hole Tube 2012 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 3nF Single 230W 88mOhm TO-3P(N) 230W Tc 30.8A N-Channel 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 3000pF @ 300V 86nC @ 10V 600V Super Junction 30.8A Ta 600V 3nF 10V ±30V 88 mΩ
SSM3K35AMFV,L3F SSM3K35AMFV,L3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) 2017 U-MOSIII Active 1 (Unlimited) RoHS Compliant SOT-723 Surface Mount 150°C TJ MOSFET (Metal Oxide) VESM 500mW Ta N-Channel 1.1Ohm @ 150mA, 4.5V 1V @ 100μA 36pF @ 10V 0.34nC @ 4.5V 250mA Ta 20V 1.2V 4.5V ±10V
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0.00000000 18 Weeks Surface Mount Cut Tape (CT) 2014 U-MOSIII Active 1 (Unlimited) 3 EAR99 RoHS Compliant SOT-723 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F3 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR 150mW Ta 100mA SWITCHING 6Ohm 30V SILICON N-Channel 3.6 Ω @ 10mA, 4V 1.5V @ 100μA 13.5pF @ 3V 0.1A 100mA Ta 30V 2.5V 4V ±20V
TK20P04M1,RQ(S TK20P04M1,RQ(S Toshiba Semiconductor and Storage 2.1649
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0.00000000 download 16 Weeks Surface Mount, Through Hole Tape & Reel (TR) 2008 U-MOSVI-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) DPAK 27W Tc 20A N-Channel 29mOhm @ 10A, 10V 2.3V @ 100μA 985pF @ 10V 15nC @ 10V 2.7ns 5.1 ns 20V 20A Ta 40V 985pF 4.5V 10V ±20V 29 mΩ
TPH1R204PB,L1Q TPH1R204PB,L1Q Toshiba Semiconductor and Storage 1.4732
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 960mW Ta 132W Tc N-Channel 1.2m Ω @ 50A, 10V 3V @ 500μA 5855pF @ 20V 62nC @ 10V 150A Tc 40V 6V 10V ±20V
TPCC8093,L1Q TPCC8093,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVII Active RoHS Compliant 8-PowerVDFN Surface Mount 150°C MOSFET (Metal Oxide) 1.9W Ta 30W Tc N-Channel 5.8m Ω @ 10.5A, 4.5V 1.2V @ 500μA 1860pF @ 10V 16nC @ 5V 21A Ta 20V 2.5V 4.5V ±12V
TK25E60X5,S1X TK25E60X5,S1X Toshiba Semiconductor and Storage 20.6205
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0.00000000 16 Weeks Through Hole Tube 2015 DTMOSIV-H Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 180W Tc 25A N-Channel 140m Ω @ 7.5A, 10V 4.5V @ 1.2mA 2400pF @ 300V 60nC @ 10V 25A Ta 600V 10V ±30V
TK28V65W5,LQ TK28V65W5,LQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Tape & Reel (TR) Active 1 (Unlimited)
TPCF8B01(TE85L,F,M TPCF8B01(TE85L,F,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Tape & Reel (TR) 2003 U-MOSIII Obsolete 1 (Unlimited) 8-SMD, Flat Lead Surface Mount 150°C TJ MOSFET (Metal Oxide) 330mW Ta P-Channel 110m Ω @ 1.4A, 4.5V 1.2V @ 200μA 470pF @ 10V 6nC @ 5V Schottky Diode (Isolated) 2.7A Ta 20V 1.8V 4.5V ±8V
SSM3K361TU,LF SSM3K361TU,LF Toshiba Semiconductor and Storage 0.3599
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 3-SMD, Flat Lead Surface Mount 175°C MOSFET (Metal Oxide) 1.8W Ta N-Channel 69m Ω @ 2A, 10V 2.5V @ 100μA 430pF @ 15V 3.2nC @ 4.5V 3.5A Ta 100V 4.5V 10V ±20V
TK5A65D(STA4,Q,M) TK5A65D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2010 π-MOSVII Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 40W Tc 5A N-Channel 1.43 Ω @ 2.5A, 10V 4V @ 1mA 800pF @ 25V 16nC @ 10V 20ns 12 ns 30V 5A Ta 650V 10V ±30V
SSM6K202FE,LF SSM6K202FE,LF Toshiba Semiconductor and Storage 0.3599
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) EAR99 RoHS Compliant No 6 SOT-563, SOT-666 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 20 ns 500mW Ta 2.3A 31 ns N-Channel 85m Ω @ 1.5A, 4V 1V @ 1mA 270pF @ 10V 12V 30V 2.3A Ta 1.8V 4V ±12V
TK3R2A10PL,S4X TK3R2A10PL,S4X Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Active 1 (Unlimited)
TPW4R50ANH,L1Q TPW4R50ANH,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2015 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 25 ns 800mW Ta 142W Tc 92A 52 ns N-Channel 4.5m Ω @ 46A, 10V 4V @ 1mA 5200pF @ 50V 58nC @ 10V 9.6ns 13 ns 20V 92A Tc 100V 10V ±20V
TPC8048-H(TE12L,Q) TPC8048-H(TE12L,Q) Toshiba Semiconductor and Storage 6.3800
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0.00000000 download Surface Mount Cut Tape (CT) 2009 U-MOSVI-H Discontinued 1 (Unlimited) RoHS Compliant No 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 1.9W 1W Ta 16A N-Channel 6.9m Ω @ 8A, 10V 2.3V @ 1mA 7540pF @ 10V 87nC @ 10V 3.7ns 7.6 ns 20V 16A Ta 60V 4.5V 10V ±20V
SSM3K35MFV(TPL3) SSM3K35MFV(TPL3) Toshiba Semiconductor and Storage 0.0657
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0.00000000 download 11 Weeks Surface Mount Tape & Reel (TR) 2007 π-MOSVI Active 1 (Unlimited) 1.2mm RoHS Compliant No 3 SOT-723 500μm 800μm Surface Mount 150°C TJ MOSFET (Metal Oxide) Single 150mW 150mW Ta 180mA N-Channel 3 Ω @ 50mA, 4V 1V @ 1mA 9.5pF @ 3V 10V 20V 180mA Ta 1.2V 4V ±10V
SSM3K15AFS,LF SSM3K15AFS,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSIII Active 1 (Unlimited) EAR99 RoHS Compliant SC-75, SOT-416 Surface Mount 150°C TJ MOSFET (Metal Oxide) 100mW 100mW Ta 100mA N-Channel 3.6 Ω @ 10mA, 4V 1.5V @ 100μA 13.5pF @ 3V 20V 30V 100mA Ta 2.5V 4V ±20V
TK4R3E06PL,S1X TK4R3E06PL,S1X Toshiba Semiconductor and Storage 1.1805
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0.00000000 12 Weeks Tube 2016 U-MOSIX-H Active Not Applicable RoHS Compliant TO-220-3 Through Hole 175°C TJ MOSFET (Metal Oxide) 87W Tc N-Channel 7.2m Ω @ 15A, 4.5V 2.5V @ 500μA 3280pF @ 30V 48.2nC @ 10V 80A Tc 60V 4.5V 10V ±20V
TK3A65D(STA4,Q,M) TK3A65D(STA4,Q,M) Toshiba Semiconductor and Storage 1.1331
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0.00000000 download 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 35W Tc 3A N-Channel 2.25Ohm @ 1.5A, 10V 4.4V @ 1mA 540pF @ 25V 11nC @ 10V 18ns 8 ns 30V 3A Ta 650V 540pF 10V ±30V 2.25 Ω
TPC8113(TE12L,Q) TPC8113(TE12L,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 1.9W 10mOhm 8-SOP (5.5x6.0) 1W Ta 11A P-Channel 10mOhm @ 5.5A, 10V 2V @ 1mA 4500pF @ 10V 107nC @ 10V 6ns 120 ns 20V -30V 11A Ta 30V 4.5nF 4V 10V ±20V 10 mΩ
SSM3J56MFV,L3F SSM3J56MFV,L3F Toshiba Semiconductor and Storage 0.3589
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 U-MOSVI Active 1 (Unlimited) RoHS Compliant SOT-723 unknown 550μm Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 150mW 8 ns -300mV 150mW Ta -800mA 26 ns P-Channel 390m Ω @ 800mA, 4.5V 100pF @ 10V 8V -20V 800mA Ta 20V 1.2V 4.5V ±8V
TK22A10N1,S4X TK22A10N1,S4X Toshiba Semiconductor and Storage 1.1519
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0.00000000 12 Weeks Through Hole Tube 2006 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power Single 27 ns 30W Tc 22A 38 ns N-Channel 13.8m Ω @ 11A, 10V 4V @ 300μA 1800pF @ 50V 28nC @ 10V 11ns 11 ns 20V 52A 22A Tc 100V 10V ±20V
TK40P03M1(T6RDS-Q) TK40P03M1(T6RDS-Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount MOSFET (Metal Oxide) 33W DPAK 40A N-Channel 10.8mOhm @ 20A, 10V 2.3V @ 100μA 1150pF @ 10V 17.5nC @ 10V 15ns 14 ns 20V 40A Ta 30V 1.15nF 4.5V 10V ±20V 10.8 mΩ
SSM6J511NU,LF SSM6J511NU,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2016 U-MOSVII Active 1 (Unlimited) RoHS Compliant 6-WDFN Exposed Pad unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1.25W 14A P-Channel 9.1m Ω @ 4A, 8V 1V @ 1mA 3350pF @ 6V 47nC @ 4.5V 14A Ta 12V
SSM6J801R,LF SSM6J801R,LF Toshiba Semiconductor and Storage 0.3599
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0.00000000 12 Weeks Tape & Reel (TR) 2016 U-MOSVI Active 1 (Unlimited) RoHS Compliant 6-SMD, Flat Leads Surface Mount 150°C TJ MOSFET (Metal Oxide) 1.5W Ta P-Channel 32.5m Ω @ 3A, 4.5V 1V @ 1mA 840pF @ 10V 12.8nC @ 4.5V 6A Ta 20V 1.5V 4.5V +6V, -8V
SSM3K309T(TE85L,F) SSM3K309T(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Cut Tape (CT) 2014 Obsolete 1 (Unlimited) RoHS Compliant 3 TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Powers Single 23 ns 700mW Ta 4.7A 34 ns N-Channel 31m Ω @ 4A, 4V 1020pF @ 10V 1V 20V 4.7A Ta 1.8V 4V ±12V
TPC6107(TE85L,F,M) TPC6107(TE85L,F,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 U-MOSIV Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant Silver, Tin No 6 SOT-23-6 Thin, TSOT-23-6 Surface Mount 150°C TJ MOSFET (Metal Oxide) 2.2W 55mOhm VS-6 (2.9x2.8) 700mW Ta 4.5A 142 ns P-Channel 55mOhm @ 2.2A, 4.5V 1.2V @ 200μA 680pF @ 10V 9.8nC @ 5V 145ns 92 ns 12V -20V 4.5A Ta 20V 680pF 2V 4.5V ±12V 55 mΩ
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