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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Impedance Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type Capacitance Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Surface Mount JESD-30 Code Number of Channels Subcategory Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Polarity Forward Current Forward Voltage Tolerance Polarity/Channel Type Power Dissipation-Max (Abs) Max Surge Current Element Configuration Voltage Tolerance Power Dissipation Turn On Delay Time Max Reverse Leakage Current Test Current ESD Protection Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage Frequency Band Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Zener Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Transistor Type Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Vce(on) (Max) @ Vge, Ic Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Diode Capacitance-Nom Impedance-Max Capacitance Ratio Capacitance Ratio Condition Diode Cap Tolerance DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
CRG07(TE85L,Q,M) CRG07(TE85L,Q,M) Toshiba Semiconductor and Storage 0.3312
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0.00000000 12 Weeks Tape & Reel (TR) 2008 Active 175°C RoHS Compliant 2 SOD-123F No SVHC Surface Mount Standard 700mA 1.1V Single Standard Recovery >500ns, > 200mA (Io) 10μA @ 400V 1.1V @ 700mA 175°C Max 100V 15A 400V
TK9A60D(STA4,Q,M) TK9A60D(STA4,Q,M) Toshiba Semiconductor and Storage 0.1971
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0.00000000 16 Weeks Through Hole Tube 2011 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 45W Tc 9A N-Channel 830mOhm @ 4.5A, 10V 4V @ 1mA 1200pF @ 25V 24nC @ 10V 25ns 12 ns 30V 9A Ta 600V 1.2nF 10V ±30V 830 mΩ
2SC2655-Y(HIT,F,M) 2SC2655-Y(HIT,F,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
RN1403,LXHF RN1403,LXHF Toshiba Semiconductor and Storage 0.0000
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0.00000000 Automotive, AEC-Q101 TO-236-3, SC-59, SOT-23-3 Toshiba Semiconductor and Storage Surface Mount 200 mW S-Mini NPN - Pre-Biased 500nA 50 V 100 mA 70 @ 10mA, 5V 300mV @ 250μA, 5mA 250 MHz 22 kOhms 22 kOhms
SSM3K15AMFV,L3F SSM3K15AMFV,L3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 18 Weeks Surface Mount Cut Tape (CT) 2014 U-MOSIII Active 1 (Unlimited) 3 EAR99 RoHS Compliant SOT-723 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F3 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR 150mW Ta 100mA SWITCHING 6Ohm 30V SILICON N-Channel 3.6 Ω @ 10mA, 4V 1.5V @ 100μA 13.5pF @ 3V 0.1A 100mA Ta 30V 2.5V 4V ±20V
RN1911FE,LXHF(CT RN1911FE,LXHF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 SOT-563, SOT-666 Toshiba Semiconductor and Storage Surface Mount 100mW ES6 2 NPN - Pre-Biased (Dual) 100nA (ICBO) 50V 100mA 120 @ 1mA, 5V 300mV @ 250μA, 5mA 250MHz 10kOhms -
GT60N321(Q) GT60N321(Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Tube 2007 Obsolete 1 (Unlimited) TO-3PL Through Hole 150°C TJ Standard GT60 170W 2.5μs 2.8V @ 15V, 60A 1000V 60A 120A 330ns/700ns
2SC3225,T6ALPSF(M 2SC3225,T6ALPSF(M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 10μA ICBO 40V 2A 500 @ 400mA 1V 500mV @ 1mA, 300mA 220MHz
1SS413CT,L3F 1SS413CT,L3F Toshiba Semiconductor and Storage 0.0477
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2006 Active 1 (Unlimited) RoHS Compliant SOD-882 Surface Mount Schottky Small Signal =< 200mA (Io), Any Speed 500nA @ 20V 550mV @ 50mA -55°C~125°C 20V 50mA 20V 3.9pF @ 0V 1MHz
RN1906FE,LF(CT RN1906FE,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) EAR99 RoHS Compliant SOT-563, SOT-666 Surface Mount 100mW 100mW 50V 100mA 50V 300mV 2 NPN - Pre-Biased (Dual) 500nA 80 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 4.7k Ω 47k Ω
HN4A56JU(TE85L,F) HN4A56JU(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 14 Weeks Surface Mount Cut Tape (CT) yes Discontinued 1 (Unlimited) RoHS Compliant Silver, Tin 5-TSSOP, SC-70-5, SOT-353 unknown Surface Mount 150°C TJ 200mW 200mW 150mA -50V 2 PNP (Dual) 100nA ICBO 50V 5V 120 @ 2mA 6V 300mV @ 10mA, 100mA 60MHz
RN2903,LF(CT RN2903,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 6.010099mg 200mW 200mW PNP 50V US6 100mA 50V 300mV 2 PNP - Pre-Biased (Dual) 500nA 50V 100mA -100mA -10V 70 70 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 22kOhms 22kOhms
TK22A10N1,S4X TK22A10N1,S4X Toshiba Semiconductor and Storage 1.1519
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0.00000000 12 Weeks Through Hole Tube 2006 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power Single 27 ns 30W Tc 22A 38 ns N-Channel 13.8m Ω @ 11A, 10V 4V @ 300μA 1800pF @ 50V 28nC @ 10V 11ns 11 ns 20V 52A 22A Tc 100V 10V ±20V
1SV228TPH3F 1SV228TPH3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 RoHS Compliant Lead Free Copper, Silver, Tin No 3 TO-236-3, SC-59, SOT-23-3 Surface Mount 125°C TJ 15V 28.5pF DUAL GULL WING 1SV228 SILICON 2 1 Pair Common Cathode Common Cathode 15V VERY HIGH FREQUENCY 13.7pF @ 8V 1MHz 30.5pF 2.6 C3/C8 6.56%
RN2962(TE85L,F) RN2962(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 unknown Surface Mount BIP General Purpose Small Signal 200mW 200mW 2 PNP 50V 100mA 50V 300mV SILICON 2 PNP - Pre-Biased (Dual) 100nA ICBO 50 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 10k Ω 10k Ω
RN1970(TE85L,F) RN1970(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount BIP General Purpose Small Signals 200mW 200mW 2 NPN 50V 100mA 50V 300mV SILICON 2 NPN - Pre-Biased (Dual) 100nA ICBO 120 @ 1mA 5V 300mV @ 250μA, 5mA 250MHz 4.7k Ω
2SK2231(TE16R1,NQ) 2SK2231(TE16R1,NQ) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount, Through Hole Tape & Reel (TR) 2007 Active 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free Silver, Tin 5A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ 60V MOSFET (Metal Oxide) 1 Single 20W 160mOhm PW-MOLD 20W Tc 5A 95 ns N-Channel 160mOhm @ 2.5A, 10V 2V @ 1mA 370pF @ 10V 12nC @ 10V 55ns 65 ns 20V 60V 5A Ta 60V 370pF 4V 10V ±20V 160 mΩ
RN2109CT(TPL3) RN2109CT(TPL3) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) SC-101, SOT-883 unknown Surface Mount YES BIP General Purpose Small Signal 50mW 1 PNP 0.05W SILICON PNP - Pre-Biased 500nA 20V 50mA 100 @ 10mA 5V 150mV @ 250μA, 5mA 47 k Ω 22 k Ω
RN2115,LXHF(CT RN2115,LXHF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 Automotive, AEC-Q101 SC-75, SOT-416 Toshiba Semiconductor and Storage Surface Mount 100 mW SSM PNP - Pre-Biased 500nA 50 V 100 mA 50 @ 10mA, 5V 300mV @ 250μA, 5mA 200 MHz 2.2 kOhms 10 kOhms
SSM6N35AFU,LF SSM6N35AFU,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 150°C 285mW Ta 2 N-Channel (Dual) 1.1 Ω @ 150mA, 4.5V 1V @ 100μA 36pF @ 10V 0.34nC @ 4.5V Standard 250mA Ta 20V
TPCC8093,L1Q TPCC8093,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVII Active RoHS Compliant 8-PowerVDFN Surface Mount 150°C MOSFET (Metal Oxide) 1.9W Ta 30W Tc N-Channel 5.8m Ω @ 10.5A, 4.5V 1.2V @ 500μA 1860pF @ 10V 16nC @ 5V 21A Ta 20V 2.5V 4.5V ±12V
CLS03(TE16R,Q) CLS03(TE16R,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2013 Obsolete 1 (Unlimited) RoHS Compliant L-FLAT™ Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 60V 0.58V @ 10A -40°C~125°C 60V 10A DC 345pF @ 10V 1MHz
2SA1931,KEHINQ(M 2SA1931,KEHINQ(M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole 150°C TJ 2W TO-220NIS PNP 1μA ICBO 50V 5A 100 @ 1A 1V 400mV @ 200mA, 2A 60MHz
TRS6E65C,S1AQ TRS6E65C,S1AQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tube 2014 Obsolete 1 (Unlimited) RoHS Compliant TO-220-2 Through Hole Silicon Carbide Schottky TO-220-2L No Recovery Time > 500mA (Io) 90μA @ 650V 1.7V @ 6A 175°C Max 650V 6A DC 0ns 35pF @ 650V 1MHz
CTS05F40,L3F CTS05F40,L3F Toshiba Semiconductor and Storage 0.2551
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0.00000000 12 Weeks Tape & Reel (TR) Active RoHS Compliant SOD-882 Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 15μA @ 40V 810mV @ 500mA 150°C Max 40V 500mA 28pF @ 0V 1MHz
CRS09(TE85L,Q,M) CRS09(TE85L,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Cut Tape (CT) 2008 Active 1 (Unlimited) 150°C -40°C RoHS Compliant Lead Free No 2 SOD-123F Surface Mount CRS09 Schottky 460mV 30A Single 50μA Fast Recovery =< 500ns, > 200mA (Io) 50μA @ 30V 460mV @ 1.5A -40°C~150°C 30V 1.5A 50μA 30V 30A 90pF @ 10V 1MHz
RN4909,LF(CT RN4909,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 200mW 1 NPN, 1 PNP - Pre-Biased (Dual) 500nA 50V 100mA 70 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 250MHz 47k Ω 22k Ω
1SS416CT,L3F 1SS416CT,L3F Toshiba Semiconductor and Storage 0.1782
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 yes Active 1 (Unlimited) RoHS Compliant 2-SMD, Flat Lead Surface Mount Schottky Small Signal =< 200mA (Io), Any Speed 50μA @ 30V 500mV @ 100mA 125°C Max 30V 100mA 30V 15pF @ 0V 1MHz
CMZ27(TE12L,Q,M) CMZ27(TE12L,Q,M) Toshiba Semiconductor and Storage 0.3184
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant Silver, Tin 2 SOD-128 30Ohm Surface Mount -40°C~150°C TJ ±10% Single 10% 2W 10μA 10mA No 10μA @ 19V 1.2V @ 200mA 27V 30Ohm
CLS03(TE16L,PCD,Q) CLS03(TE16L,PCD,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2013 Obsolete 1 (Unlimited) L-FLAT™ Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 60V 0.58V @ 10A -40°C~125°C 60V 10A DC 345pF @ 10V 1MHz
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