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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Height Width Impedance Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Gain Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max Non-rep Pk Forward Current-Max Output Current Polarity Forward Current Forward Voltage Tolerance Polarity/Channel Type Power Dissipation-Max (Abs) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Test Current ESD Protection Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage (DC) Frequency Band Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F FET Technology Zener Voltage Turn-Off Delay Time FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Voltage - Peak Reverse (Max) Diode Capacitance-Nom Impedance-Max Capacitance Ratio Capacitance Ratio Condition Diode Cap Tolerance DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2) Noise Figure (dB Typ @ f)
RN1317(TE85L,F) RN1317(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 SC-70, SOT-323 Surface Mount RN131* 100mW NPN Single 100mW 50V 100mA 50V 50V NPN - Pre-Biased 500nA 100mA 30 30 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 10 k Ω 4.7 k Ω
SSM3K15CT(TPL3) SSM3K15CT(TPL3) Toshiba Semiconductor and Storage 0.0356
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 π-MOSVI Not For New Designs 1 (Unlimited) RoHS Compliant No 3 SC-101, SOT-883 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Powers Single 100mW 100mW Ta 100mA N-Channel 4 Ω @ 10mA, 4V 1.5V @ 100μA 7.8pF @ 3V 20V 30V 0.1A 100mA Ta 2.5V 4V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) RoHS Compliant No 4 TO-243AA Surface Mount 150°C TJ 1W 1 1W 2A 50V 50V PNP 100nA ICBO 50V 7V 200 @ 300mA 2V 200mV @ 33mA, 1A
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 Active 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 Surface Mount 3.005049mg 2 100mW 100mW NPN, PNP 50V ES6 100mA 50V 300mV 1 NPN, 1 PNP - Pre-Biased (Dual) 500nA 50V 100mA 100mA 10V 50 50 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 200MHz 10kOhms 10kOhms
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0.00000000 12 Weeks Cut Tape (CT) Active 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 Surface Mount 3.005049mg 100mW NPN 50V 2 NPN - Pre-Biased (Dual) 500nA 100mA 100mA 5V 80 80 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 2.2k Ω 47k Ω
CUS02(TE85L,Q,M) CUS02(TE85L,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 150°C -40°C RoHS Compliant 2 SC-76, SOD-323 Surface Mount Schottky 450mV Single Fast Recovery =< 500ns, > 200mA (Io) 100μA @ 30V 470mV @ 1A -40°C~150°C 30V 1A 100μA 30V 20A
2SC2235-Y,T6KEHF(M 2SC2235-Y,T6KEHF(M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
RN2907FE,LF(CT RN2907FE,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Cut Tape (CT) Discontinued 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 Surface Mount 3.005049mg 100mW PNP -50V 2 PNP - Pre-Biased (Dual) 500nA 50V 100mA -100mA -6V 80 80 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 10k Ω 47k Ω
CMS11(TE12L) CMS11(TE12L) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Cut Tape (CT) 2004 no Discontinued 1 (Unlimited) 2 EAR99 150°C -40°C Non-RoHS Compliant Contains Lead 2A No FREE WHEELING DIODE SOD-128 Surface Mount 40V 95pF 8541.10.00.80 DUAL FLAT CMS11 2 R-PDSO-F2 Rectifier Diodes SILICON 1 Schottky GENERAL PURPOSE 1 40A 2A Standard Single Fast Recovery =< 500ns, > 200mA (Io) 500μA @ 40V 550mV @ 2A -40°C~150°C 40V 2A 500μA 40V 30A
1SS226,LF 1SS226,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2017 Active 1 (Unlimited) 3 EAR99 125°C -55°C RoHS Compliant No TO-236-3, SC-59, SOT-23-3 Surface Mount 8541.10.00.70 DUAL GULL WING R-PDSO-G3 SILICON 2 Standard 0.1A 100mA Small Signal =< 200mA (Io), Any Speed 500nA @ 80V 1.2V @ 100mA 125°C Max 85V 2A 1 Pair Series Connection 80V 4 ns 0.15W
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD PNP 1μA ICBO 80V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 80MHz
TK10A60W5,S5VX TK10A60W5,S5VX Toshiba Semiconductor and Storage 1.7144
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0.00000000 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 30W Tc 9.7A N-Channel 450mOhm @ 4.9A, 10V 4.5V @ 500μA 720pF @ 300V 25nC @ 10V 9.7A Ta 600V 720pF 10V ±30V 450 mΩ
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 U-MOSIV Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 8-SOP (5.5x6.0) 1W Ta 18A N-Channel 3.4mOhm @ 9A, 10V 2.5V @ 1mA 2900pF @ 10V 56nC @ 10V 18ns 25 ns 20V 18A Ta 30V 2.9nF 4.5V 10V ±20V 3.4 mΩ
TK20N60W,S1VF TK20N60W,S1VF Toshiba Semiconductor and Storage 0.0017
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-247-3 Through Hole 38.000013g 150°C TJ MOSFET (Metal Oxide) 1 Single 50 ns 130mOhm TO-247 165W Tc 20A 100 ns N-Channel 155mOhm @ 10A, 10V 3.7V @ 1mA 1680pF @ 300V 48nC @ 10V 25ns 6 ns 30V 20A Ta 600V 1.68nF 10V ±30V 155 mΩ
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2015 Discontinued 1 (Unlimited) EAR99 RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount -55°C~150°C TJ ENHANCEMENT MODE 2 Other Transistors 200mW N-CHANNEL AND P-CHANNEL Dual 175 ns 100mA METAL-OXIDE SEMICONDUCTOR 251 ns N and P-Channel 3 Ω @ 50mA, 4V 1V @ 1mA 9.5pF @ 3V -1V Logic Level Gate, 1.2V Drive 0.18A 180mA 100mA 20V
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0.00000000 Automotive, AEC-Q101 TO-236-3, SC-59, SOT-23-3 Toshiba Semiconductor and Storage Surface Mount 200 mW S-Mini NPN - Pre-Biased 500nA 50 V 100 mA 80 @ 10mA, 5V 300mV @ 250μA, 5mA 250 MHz 47 kOhms 47 kOhms
RN2119MFV(TPL3) RN2119MFV(TPL3) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 11 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 150°C -65°C RoHS Compliant No 3 SOT-723 Surface Mount RN211* 150mW PNP Single 150mW 50V 100mA 50V 50V PNP - Pre-Biased 100nA ICBO -100mA -5V 120 120 @ 1mA 5V 300mV @ 500μA, 5mA 1 k Ω
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0.00000000 download Bulk 2010 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD PNP 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) Active 1 (Unlimited) 2 EAR99 RoHS Compliant 2 SC-79, SOD-523 Surface Mount 125°C TJ DUAL FLAT 1SV305 SILICON 1 Single VERY HIGH FREQUENCY 6.6pF @ 4V 1MHz 10V 18.3pF 3 C1/C4 5.46%
1SS294,LF 1SS294,LF Toshiba Semiconductor and Storage 0.2277
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) SMD/SMT EAR99 125°C -55°C 2.9mm RoHS Compliant 3 TO-236-3, SC-59, SOT-23-3 unknown 1.1mm 1.5mm Surface Mount 1SS294 150mW Schottky 100mA 600mV Single Small Signal =< 200mA (Io), Any Speed 5μA @ 40V 600mV @ 100mA 125°C Max 40V 100mA 5μA 45V 300mA 40V 25pF @ 0V 1MHz
TK5A50D(STA4,Q,M) TK5A50D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) Single 35W 1.5Ohm TO-220SIS 35W Tc 5A N-Channel 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 490pF @ 25V 11nC @ 10V 18ns 8 ns 30V 500V 5A Ta 500V 490pF 10V ±30V 1.5 Ω
1SS404,H3F 1SS404,H3F Toshiba Semiconductor and Storage 0.1797
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 yes Active 1 (Unlimited) 100°C -40°C RoHS Compliant Silver, Tin SC-76, SOD-323 unknown Surface Mount Schottky 300mA Single Fast Recovery =< 500ns, > 200mA (Io) 50μA @ 20V 450mV @ 300mA 125°C Max 20V 300mA 25V 46pF @ 0V 1MHz
1SS362TE85LF 1SS362TE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Cut Tape (CT) 2014 Active 1 (Unlimited) 3 RoHS Compliant SC-75, SOT-416 unknown Surface Mount DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G3 125°C Rectifier Diodes SILICON 2 Standard 0.08A 85V 1A Small Signal =< 200mA (Io), Any Speed 500nA @ 80V 1.2V @ 100mA 125°C Max 1 Pair Series Connection 80V 80mA 4ns 0.1W
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0.00000000 16 Weeks Tape & Reel (TR) Active 1 (Unlimited)
CRZ24(TE85L,Q,M) CRZ24(TE85L,Q,M) Toshiba Semiconductor and Storage 0.3915
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2017 Active 1 (Unlimited) RoHS Compliant 2 SOD-123F 30Ohm Surface Mount -40°C~150°C TJ 700mW ±10% Single 10μA 10mA No 10μA @ 17V 1V @ 200mA 24V 30Ohm
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0.00000000 16 Weeks Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) 8-PowerWDFN Surface Mount 175°C MOSFET (Metal Oxide) 960mW Ta 170W Tc N-Channel 600μ Ω @ 50A, 10V 2.1V @ 1mA 10000pF @ 15V 110nC @ 10V 150A Tc 30V 4.5V 10V ±20V
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0.00000000 download 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-247-3 Through Hole 150°C TJ MOSFET (Metal Oxide) Single 400W Tc 61.8A 310 ns N-Channel 40m Ω @ 30.9A, 10V 3.7V @ 3.1mA 6500pF @ 300V 180nC @ 10V 58ns 15 ns 30V 600V Super Junction 61.8A Ta 10V ±30V
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 Active 1 (Unlimited) EAR99 RoHS Compliant SC-74, SOT-457 unknown Surface Mount 150°C Other Diodes 300mW Standard 100mA 2A Small Signal =< 200mA (Io), Any Speed 100μA @ 400V 1.3V @ 100mA 150°C Max 400V 100mA 3 Independent 500 ns
2SC2235-Y(T6KMATFM 2SC2235-Y(T6KMATFM Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
MT3S111P(TE12L,F) MT3S111P(TE12L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) EAR99 RoHS Compliant TO-243AA Surface Mount 150°C TJ YES Other Transistors 10.5dB 1W Single NPN 0.3W NPN 6000MHz 6V 100mA 200 @ 30mA 5V 8GHz 1.25dB @ 1GHz
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