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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Frequency Height Width Resistance Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance Max Frequency Max Current Rating Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Surface Mount JESD-30 Code Number of Channels Subcategory Gain Max Power Dissipation Power - Max Number of Elements Configuration Diode Type Max Output Power Polarity Forward Current Forward Voltage Tolerance Gain Bandwidth Product Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Power Dissipation-Max Reverse Voltage Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Resistance @ If, F Impedance-Max Voltage - Zener (Nom) (Vz) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2) Noise Figure (dB Typ @ f)
RN4982,LF(CT RN4982,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 yes Active 1 (Unlimited) 6 RoHS Compliant BUILT IN BIAS RESISTANCE RATIO IS 1 6-TSSOP, SC-88, SOT-363 unknown Surface Mount 6.010099mg GULL WING R-PDSO-G6 2 200mW 200mW 2 NPN, PNP 50V 100mA 50V 300mV SWITCHING SILICON 1 NPN, 1 PNP - Pre-Biased (Dual) 250MHz 100μA ICBO -100mA -10V 50 50 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 200MHz 10k Ω 10k Ω
2SC4604,T6F(J 2SC4604,T6F(J Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 100nA ICBO 50V 3A 120 @ 100mA 2V 500mV @ 75mA, 1.5A 100MHz
RN4983,LXHF(CT RN4983,LXHF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 Automotive, AEC-Q101 6-TSSOP, SC-88, SOT-363 Toshiba Semiconductor and Storage Surface Mount 200mW US6 1 NPN, 1 PNP - Pre-Biased (Dual) 500nA 50V 100mA 70 @ 10mA, 5V 300mV @ 250μA, 5mA 250MHz, 200MHz 22kOhms 22kOhms
RN2130MFV,L3F RN2130MFV,L3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SOT-723 Surface Mount 150mW PNP - Pre-Biased 100nA ICBO 50V 100mA 100 @ 10mA 5V 300mV @ 500μA, 5mA 100 k Ω 100 k Ω
RN1702JE(TE85L,F) RN1702JE(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) 150°C -55°C RoHS Compliant 5 SOT-553 unknown Surface Mount 250MHz BIP General Purpose Small Signal 100mW 2 NPN Dual 50V 100mA 50V 300mV 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 100nA ICBO 100mA 50V 10V 50 50 @ 10mA 5V 300mV @ 250μA, 5mA 10k Ω 10k Ω
2SC5085-Y(TE85L,F) 2SC5085-Y(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Cut Tape (CT) 2011 Active 1 (Unlimited) RoHS Compliant SC-70, SOT-323 Surface Mount 125°C TJ Other Transistors 11dB ~ 16.5dB 100mW 100mW 7 GHz NPN Single 12V 80mA 12V 12V NPN 5000MHz 20V 3V 80 120 @ 20mA 10V 1.1dB @ 1GHz
RN1318(TE85L,F) RN1318(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 SC-70, SOT-323 Surface Mount RN131* 100mW NPN Single 100mW 50V 100mA 50V 50V NPN - Pre-Biased 500nA 100mA 50 50 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 47 k Ω 10 k Ω
RN1101,LF(CT RN1101,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Surface Mount Cut Tape (CT) 2014 Discontinued 1 (Unlimited) RoHS Compliant SC-75, SOT-416 Surface Mount 100mW 100mW 50V SSM 100mA 50V 300mV NPN - Pre-Biased 500nA 50V 100mA 30 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 4.7 kOhms 4.7 kOhms
2SK3476(TE12L,Q) 2SK3476(TE12L,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Cut Tape (CT) 2009 Discontinued 1 (Unlimited) 150°C -45°C RoHS Compliant Lead Free 3A 3 TO-271AA unknown 520MHz 11.4dB 20W 1 7W 3A 10V 20V 500mA N-Channel 7.2V
TK3R2A10PL,S4X TK3R2A10PL,S4X Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Active 1 (Unlimited)
RN1421TE85LF RN1421TE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-236-3, SC-59, SOT-23-3 Surface Mount RN142* 200mW NPN Single 800mA 50V 50V NPN - Pre-Biased 500nA 60 @ 100mA 1V 250mV @ 2mA, 50mA 300MHz 1 k Ω 1 k Ω
SSM6J53FE(TE85L,F) SSM6J53FE(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 Obsolete 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) 500mW 500mW Ta 1.8A P-Channel 136m Ω @ 1A, 2.5V 1V @ 1mA 568pF @ 10V 10.6nC @ 4V 8V 20V 1.8A Ta 1.5V 2.5V ±8V
TK13E25D,S1X(S TK13E25D,S1X(S Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2009 Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power Single 102W Tc 13A N-Channel 250m Ω @ 6.5A, 10V 3.5V @ 1mA 1100pF @ 100V 25nC @ 10V 40ns 20 ns 20V 13A Ta 250V 10V ±20V
RN1902T5LFT RN1902T5LFT Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Cut Tape (CT) 2014 Discontinued 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 200mW 200mW NPN Dual 50V US6 100mA 50V 300mV 2 NPN - Pre-Biased (Dual) 100nA ICBO 50V 100mA 100mA 10V 50 50 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 10kOhms 10kOhms
RN2409,LF RN2409,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Cut Tape (CT) 2016 Discontinued 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 200mW PNP -50V PNP - Pre-Biased 500nA 50V 100mA -100mA -15V 70 70 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 47 k Ω 22 k Ω
RN2101CT(TPL3) RN2101CT(TPL3) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) SC-101, SOT-883 unknown Surface Mount YES BIP General Purpose Small Signals 50mW 1 PNP 0.05W SILICON PNP - Pre-Biased 500nA 20V 50mA 30 @ 10mA 5V 150mV @ 250μA, 5mA 4.7 k Ω 4.7 k Ω
RN2102,LF(CT RN2102,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SC-75, SOT-416 Surface Mount 100mW 100mW 50V 100mA 50V 300mV PNP - Pre-Biased 500nA 50 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 10 k Ω 10 k Ω
CUS01(TE85L,Q,M) CUS01(TE85L,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 24 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 125°C -40°C 1.9mm RoHS Compliant 2 SC-76, SOD-323 unknown 600μm 1.25mm Surface Mount Schottky 1A Single Fast Recovery =< 500ns, > 200mA (Io) 1.5mA @ 30V 390mV @ 1A -40°C~125°C 30V 1A 1.5mA 30V 20A
CRZ22(TE85L,Q) CRZ22(TE85L,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) RoHS Compliant SOD-123F Surface Mount -40°C~150°C CRZ22 700mW ±10% 10μA @ 16V 1V @ 200mA 30Ohm 22V
2SC6139,T2F(M 2SC6139,T2F(M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) SC-71 Through Hole 150°C TJ 1W NPN 100nA ICBO 160V 1.5A 140 @ 100mA 5V 500mV @ 50mA, 500mA 100MHz
RN1910,LXHF(CT RN1910,LXHF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 Automotive, AEC-Q101 6-TSSOP, SC-88, SOT-363 Toshiba Semiconductor and Storage Surface Mount 200mW US6 2 NPN - Pre-Biased (Dual) 100nA (ICBO) 50V 100mA 120 @ 1mA, 5V 300mV @ 250μA, 5mA 250MHz 4.7kOhms -
TPC8213-H(TE12LQ,M TPC8213-H(TE12LQ,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Tape & Reel (TR) 2006 Obsolete 1 (Unlimited) 8-SOIC (0.173, 4.40mm Width) unknown Surface Mount 150°C TJ 450mW 2 N-Channel (Dual) 50m Ω @ 2.5A, 10V 2.3V @ 1mA 625pF @ 10V 11nC @ 10V Logic Level Gate 5A 60V
RN1413(TE85L,F) RN1413(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 11 Weeks Surface Mount Tape & Reel (TR) 2014 yes Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-236-3, SC-59, SOT-23-3 Surface Mount 200mW Single 50V 100mA 50V 300mV NPN - Pre-Biased 100nA ICBO 120 @ 1mA 5V 300mV @ 250μA, 5mA 250MHz 47 k Ω
RN1110,LF(CT RN1110,LF(CT Toshiba Semiconductor and Storage 0.0000
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Min: 1

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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SC-75, SOT-416 Surface Mount 100mW 100mW SSM 100mA 50V 300mV NPN - Pre-Biased 100nA ICBO 50V 100mA 120 @ 1mA 5V 300mV @ 250μA, 5mA 250MHz 4.7 kOhms
SSM6L36TU,LF SSM6L36TU,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) 6 RoHS Compliant 6-SMD, Flat Leads Surface Mount 150°C ENHANCEMENT MODE DUAL NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F6 500mW Ta 2 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR N-CHANNEL AND P-CHANNEL SWITCHING 0.85Ohm 20V METAL-OXIDE SEMICONDUCTOR SILICON N and P-Channel 630m Ω @ 200mA, 5V, 1.31 Ω @ 100mA, 4.5V 1V @ 1mA 46pF 43pF @ 10V 1.23nC, 1.2nC @ 4V Logic Level Gate, 1.5V Drive 0.5A 500mA Ta 330mA Ta 20V
RN2101MFV,L3F(CT RN2101MFV,L3F(CT Toshiba Semiconductor and Storage 0.1681
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0.00000000 10 Weeks Tape & Reel (TR) Active 1 (Unlimited) SOT-723 Surface Mount 150mW PNP - Pre-Biased 500nA 50V 100mA 30 @ 10mA 5V 300mV @ 500μA, 5mA 250MHz 4.7 k Ω 4.7 k Ω
TPH4R10ANL,L1Q TPH4R10ANL,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8-PowerVDFN Surface Mount 150°C MOSFET (Metal Oxide) 2.5W Ta 67W Tc N-Channel 4.1m Ω @ 35A, 10V 2.5V @ 1mA 6.3nF @ 50V 75nC @ 10V 92A Ta 70A Tc 100V 4.5V 10V ±20V
1SV271TPH3F 1SV271TPH3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 11 Weeks Surface Mount Tape & Reel (TR) 2003 Active 1 (Unlimited) RoHS Compliant Lead Free No 2 SC-76, SOD-323 3Ohm 125°C TJ 50V 400FF 50mA 1SV271 PIN - Single 50mA 1V Single 50V 0.4pF @ 50V 1MHz 4.5Ohm @ 10mA 100MHz
SSM6N357R,LF SSM6N357R,LF Toshiba Semiconductor and Storage 0.3561
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Min: 1

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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 6-SMD, Flat Leads Surface Mount 150°C 1.5W Ta 2 N-Channel (Dual) 1.8 Ω @ 150mA, 5V 2V @ 1mA 60pF @ 12V 1.5nC @ 5V Standard 650mA Ta 60V
TPW4R50ANH,L1Q TPW4R50ANH,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2015 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 25 ns 800mW Ta 142W Tc 92A 52 ns N-Channel 4.5m Ω @ 46A, 10V 4V @ 1mA 5200pF @ 50V 58nC @ 10V 9.6ns 13 ns 20V 92A Tc 100V 10V ±20V
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