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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Frequency Height Width Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Terminal Position Terminal Form Base Part Number JESD-30 Code Number of Channels Subcategory Gain Max Power Dissipation Power - Max Number of Elements Configuration Diode Type Polarity Forward Voltage Case Connection Gain Bandwidth Product Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Peak Non-Repetitive Surge Current Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2) Noise Figure (dB Typ @ f)
2SC3225,T6ALPSF(M 2SC3225,T6ALPSF(M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 10μA ICBO 40V 2A 500 @ 400mA 1V 500mV @ 1mA, 300mA 220MHz
RN4911(T5L,F,T) RN4911(T5L,F,T) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) 6-TSSOP, SC-88, SOT-363 Surface Mount 200mW 1 NPN, 1 PNP - Pre-Biased (Dual) 100nA ICBO 50V 100mA 120 @ 1mA 5V 300mV @ 250μA, 5mA 200MHz 10k Ω
RN4984(T5L,F,T) RN4984(T5L,F,T) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Cut Tape (CT) 2009 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant No 6 6-TSSOP, SC-88, SOT-363 Surface Mount 200mW NPN, PNP Dual 200mW 50V 100mA 50V 50V 1 NPN, 1 PNP - Pre-Biased (Dual) 100μA ICBO -100mA 80 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 200MHz 47k Ω 47k Ω
2SK3700(F) 2SK3700(F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 15.9mm RoHS Compliant Lead Free No 3 TO-3P-3, SC-65-3 19mm 4.8mm Through Hole 150°C TJ MOSFET (Metal Oxide) 1 Single 150W 150W Tc 5A N-Channel 2.5 Ω @ 3A, 10V 4V @ 1mA 1150pF @ 25V 28nC @ 10V 30ns 60 ns 30V 5A Ta 900V
RN2107MFV,L3F(CT RN2107MFV,L3F(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 10 Weeks Tape & Reel (TR) Active 1 (Unlimited) SOT-723 Surface Mount 150mW PNP - Pre-Biased 500nA 50V 100mA 80 @ 10mA 5V 300mV @ 500μA, 5mA 10 k Ω 47 k Ω
RN2910FE,LF(CT RN2910FE,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Cut Tape (CT) 2016 Discontinued 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 Surface Mount 3.005049mg 100mW PNP -50V 2 PNP - Pre-Biased (Dual) 100nA ICBO 50V 100mA -100mA -5V 120 120 @ 1mA 5V 300mV @ 250μA, 5mA 200MHz 4.7k Ω
TK13A65U(STA4,Q,M) TK13A65U(STA4,Q,M) Toshiba Semiconductor and Storage 4.2413
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0.00000000 download 12 Weeks Through Hole Tube 2009 DTMOSII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 1 40W TO-220SIS 40W Tc 13A N-Channel 380mOhm @ 6.5A, 10V 5V @ 1mA 950pF @ 10V 17nC @ 10V 30ns 8 ns 30V 13A Ta 650V 950pF 10V ±30V 380 mΩ
RN4905,LXHF(CT RN4905,LXHF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 Automotive, AEC-Q101 6-TSSOP, SC-88, SOT-363 Toshiba Semiconductor and Storage Surface Mount 200mW US6 1 NPN, 1 PNP - Pre-Biased (Dual) 500nA 50V 100mA 80 @ 10mA, 5V 300mV @ 250μA, 5mA 200MHz, 250MHz 2.2kOhms 47kOhms
TPC8022-H(TE12LQ,M TPC8022-H(TE12LQ,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1.9W 27mOhm 8-SOP (5.5x6.0) 1W Ta 7.5A N-Channel 27mOhm @ 3.8A, 10V 2.3V @ 1mA 650pF @ 10V 11nC @ 10V 3ns 2 ns 20V 40V 7.5A Ta 40V 650pF 4.5V 10V ±20V 27 mΩ
2SK1829TE85LF 2SK1829TE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Cut Tape (CT) 2009 Discontinued 1 (Unlimited) RoHS Compliant SC-70, SOT-323 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) 100mW Ta N-Channel 40 Ω @ 10mA, 2.5V 5.5pF @ 3V 50mA Ta 20V 2.5V 10V
TK18A50D(STA4,Q,M) TK18A50D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 50W Tc 18A N-Channel 270mOhm @ 9A, 10V 4V @ 1mA 2600pF @ 25V 45nC @ 10V 50ns 25 ns 30V 18A Ta 500V 2.6nF 10V ±30V 270 mΩ
RN1110ACT(TPL3) RN1110ACT(TPL3) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant SC-101, SOT-883 Surface Mount 100mW 100mW 50V 80mA 50V 150mV NPN - Pre-Biased 100nA ICBO 120 @ 1mA 5V 150mV @ 250μA, 5mA 47 k Ω
TK28V65W5,LQ TK28V65W5,LQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Tape & Reel (TR) Active 1 (Unlimited)
2SC4116-GR,LF 2SC4116-GR,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2015 Active 1 (Unlimited) 2mm RoHS Compliant Silver, Tin SC-70, SOT-323 unknown 900μm 1.25mm Surface Mount 6.208546mg 125°C TJ 2SC4116 100mW 80MHz 50V 150mA 50V 50V NPN 100nA ICBO 100mV 150mA 60V 5V 70 70 @ 2mA 6V 250mV @ 10mA, 100mA
CMS15I40A(TE12L,QM CMS15I40A(TE12L,QM Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) 150°C -55°C RoHS Compliant SOD-128 Surface Mount Schottky 490mV Single Fast Recovery =< 500ns, > 200mA (Io) 100μA @ 40V 490mV @ 1.5A 150°C Max 25A 40V 1.5A 62pF @ 10V 1MHz
SSM3J145TU,LF SSM3J145TU,LF Toshiba Semiconductor and Storage 0.1340
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant 3-SMD, Flat Lead Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta P-Channel 103m Ω @ 1A, 4.5V 1V @ 1mA 270pF @ 10V 4.6nC @ 4.5V 3A Ta 20V 1.5V 4.5V +6V, -8V
RN2711JE(TE85L,F) RN2711JE(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SOT-553 unknown Surface Mount BIP General Purpose Small Signal 100mW 100mW 2 PNP 50V 100mA 50V 300mV SILICON 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 100nA ICBO 120 @ 1mA 5V 300mV @ 250μA, 5mA 200MHz 10k Ω
2SA1962-O(Q) 2SA1962-O(Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2007 Active Not Applicable 3 RoHS Compliant Lead Free -15A No 3 TO-3P-3, SC-65-3 30MHz Through Hole 150°C TJ -230V 2SA1962 Other Transistors 130W 1 COLLECTOR 30MHz PNP Single 130W 15A 230V 230V AMPLIFIER SILICON PNP 30MHz 5μA ICBO -1.5V 230V 5V 55 80 @ 1A 5V 3V @ 800mA, 8A
2SJ438(CANO,Q,M) 2SJ438(CANO,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole TO-220NIS
SSM6P69NU,LF SSM6P69NU,LF Toshiba Semiconductor and Storage 0.3650
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant 6-WDFN Exposed Pad Surface Mount 150°C 1W Ta 2 P-Channel (Dual) 45m Ω @ 3.5A, 10V 1.2V @ 1mA 480pF @ 10V 6.74nC @ 4.5V Logic Level Gate, 1.8V Drive 4A Ta 20V
TK62N60W,S1VF TK62N60W,S1VF Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-247-3 Through Hole 150°C TJ MOSFET (Metal Oxide) Single 400W Tc 61.8A 310 ns N-Channel 40m Ω @ 30.9A, 10V 3.7V @ 3.1mA 6500pF @ 300V 180nC @ 10V 58ns 15 ns 30V 600V Super Junction 61.8A Ta 10V ±30V
2SC5108-Y,LF 2SC5108-Y,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SC-75, SOT-416 unknown Surface Mount 11dB 100mW 100mW 10V 30mA 10V NPN 120 @ 5mA 5V 6GHz
2SA1020-Y(T6CN,A,F 2SA1020-Y(T6CN,A,F Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2010 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD PNP 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
TK80S04K3L(T6L1,NQ TK80S04K3L(T6L1,NQ Toshiba Semiconductor and Storage 2.9435
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2012 U-MOSIV Active 1 (Unlimited) 175°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) 13 ns DPAK+ 100W Tc 80A 20 ns N-Channel 3.1mOhm @ 40A, 10V 3V @ 1mA 4340pF @ 10V 87nC @ 10V 28ns 80 ns 20V 80A Ta 40V 4.34nF 6V 10V ±20V 3.1 mΩ
SSM3J372R,LF SSM3J372R,LF Toshiba Semiconductor and Storage 0.3777
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant SOT-23-3 Flat Leads Surface Mount 150°C MOSFET (Metal Oxide) 1W Ta P-Channel 42m Ω @ 5A, 10V 1.2V @ 1mA 560pF @ 15V 8.2nC @ 4.5V 6A Ta 30V 1.8V 10V +12V, -6V
TK31V60X,LQ TK31V60X,LQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Cut Tape (CT) 2014 DTMOSIV-H Active 1 (Unlimited) 4 RoHS Compliant 4-VSFN Exposed Pad Surface Mount 37.393021mg 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NO LEAD S-PSSO-N4 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 55 ns 240W Tc 30.8A SWITCHING 0.098Ohm 600V 130 ns SILICON N-Channel 98m Ω @ 9.4A, 10V 3.5V @ 1.5mA 3000pF @ 300V 65nC @ 10V 22ns 6 ns 30V Super Junction 30.8A Ta 600V 338 mJ 10V ±30V
RN4609(TE85L,F) RN4609(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SC-74, SOT-457 unknown Surface Mount BIP General Purpose Small Signal 300mW 300mW 2 NPN/PNP 50V 100mA 50V 300mV SILICON 1 NPN, 1 PNP - Pre-Biased (Dual) 100nA ICBO 70 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 47k Ω 22k Ω
2SC5086-O,LF 2SC5086-O,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant Silver, Tin 3 SC-75, SOT-416 unknown Surface Mount 125°C TJ 100mW 100mW 12V 80mA 12V 12V NPN 20V 3V 80 @ 20mA 10V 7GHz 1dB @ 500MHz
RN2903,LF(CT RN2903,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 6.010099mg 200mW 200mW PNP 50V US6 100mA 50V 300mV 2 PNP - Pre-Biased (Dual) 500nA 50V 100mA -100mA -10V 70 70 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 22kOhms 22kOhms
2SC5087YTE85LF 2SC5087YTE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 11 Weeks Surface Mount Cut Tape (CT) 2014 Active 1 (Unlimited) EAR99 RoHS Compliant SC-61AA Surface Mount 125°C TJ Other Transistors 13dB 150mW 150mW 7 GHz NPN Single 12V 80mA 12V 12V NPN 5000MHz 20V 3V 80 120 @ 20mA 10V 1.1dB @ 1GHz
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