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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IPB65R150CFDATMA2 IPB65R150CFDATMA2 Infineon Technologies 0.0000
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0.00000000 Obsolete 1 (Unlimited) RoHS Compliant DPAK
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0.00000000 download 18 Weeks Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 151W Tc SWITCHING 0.19Ohm 650V SILICON N-Channel 190m Ω @ 7.3A, 10V 4.5V @ 730μA 1850pF @ 100V 68nC @ 10V 17.5A 17.5A Tc 650V 57.2A 484 mJ 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2008 SIPMOS® Obsolete 1 (Unlimited) 4 EAR99 RoHS Compliant No 4 LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 4 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.8W 4.6 ns 1.8W Ta 170mA 17 ns SILICON N-Channel 25 Ω @ 170mA, 10V 2.3V @ 94μA 154pF @ 25V 5.9nC @ 10V 68 ns 20V 170mA Ta 400V 0.68A 4.5V 10V ±20V
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0.00000000 download Tape & Reel (TR) 2003 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.21.00.95 e3 Matte Tin (Sn) DUAL GULL WING 260 40 3 YES R-PDSO-G3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 360mW Ta 5Ohm 60V SILICON N-Channel 5 Ω @ 500mA, 10V 1.8V @ 26μA 45pF @ 25V 1.5nC @ 10V 0.2A 200mA Ta 60V 4.2 pF 4.5V 10V ±20V
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