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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IPP039N04LGHKSA1 IPP039N04LGHKSA1 Infineon Technologies 0.0000
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0.00000000 download Tube 2009 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 94W Tc SWITCHING 0.0052Ohm 40V SILICON N-Channel 3.9m Ω @ 80A, 10V 2V @ 45μA 6100pF @ 25V 78nC @ 10V 80A 80A Tc 40V 400A 60 mJ 4.5V 10V ±20V
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0.00000000 download Through Hole Tube 2007 HEXFET® Obsolete 1 (Unlimited) Through Hole 175°C -40°C 10.6426mm RoHS Compliant No 3 TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) 1 Single 370W 31 ns 5V 37mOhm TO-220AB 370W Tc 56A 51 ns N-Channel 37mOhm @ 28A, 10V 5V @ 250μA 5510pF @ 25V 170nC @ 10V 30V 230V 276V 5 V 56A Tc 230V 5.51nF 10V ±30V 37 mΩ
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0.00000000 download Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 6 EAR99 10.67mm ROHS3 Compliant Tin No 7 ULTRA LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING R-PSSO-G6 1 TO-263CB DRAIN Single 370W 17 ns 370W Tc 240A SWITCHING 0.0026Ohm 100 ns SILICON N-Channel 2.6m Ω @ 160A, 10V 4V @ 250μA 9200pF @ 50V 240nC @ 10V 80ns 64 ns 20V 75V 240A Tc 320 mJ 10V ±20V
IPS075N03LGBKMA1 IPS075N03LGBKMA1 Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2006 HEXFET® Obsolete 3 (168 Hours) SMD/SMT 150°C -40°C Non-RoHS Compliant Lead Free 14A 7 DirectFET™ Isometric MP No SVHC Surface Mount -40°C~150°C TJ 30V MOSFET (Metal Oxide) 2.3W 1.8V DIRECTFET™ MP 13 ns 2.3W Ta 42W Tc 14A 14 ns N-Channel 7.7mOhm @ 14A, 10V 2.35V @ 250μA 1330pF @ 15V 17nC @ 4.5V 15ns 3.8 ns 20V 30V 30V 1.8 V 14A Ta 59A Tc 30V 1.33nF 4.5V 10V ±20V 7.7 mΩ
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0.00000000 download 26 Weeks Surface Mount Tube 2006 HEXFET® Active 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 65MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 Other Transistors 1 TO-252AA DRAIN Single 110W 14 ns -2V 110W Tc 31A SWITCHING 39 ns SILICON P-Channel 65m Ω @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 66ns 63 ns 20V -55V 31A Tc 55V 280 mJ 10V ±20V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 3.0226mm ROHS3 Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.016mm 1.397mm 46MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 Single 1.3W 3.6 ns 12V 1.3W Ta 13 ns 4.1A SWITCHING 11 ns SILICON N-Channel 46m Ω @ 4.1A, 4.5V 1.1V @ 5μA 290pF @ 16V 3.5nC @ 4.5V 4.9ns 6 ns 12V 20V 4.1A Ta 2.5V 4.5V ±12V
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0.00000000 download Surface Mount Tape & Reel (TR) 2011 HEXFET® Obsolete 1 (Unlimited) 150°C -40°C RoHS Compliant Lead Free No 7 DirectFET™ Isometric MX 1.3MOhm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) 1 2.1W 16 ns 1.7mOhm DIRECTFET™ MX 2.1W Ta 54W Tc 32A 20 ns N-Channel 1.3mOhm @ 33A, 10V 2.1V @ 100μA 4160pF @ 13V 39nC @ 4.5V 42ns 14 ns 16V 25V Schottky Diode (Body) 32A Ta 160A Tc 25V 4.16nF 4.5V 10V ±16V 1.3 mΩ
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0.00000000 download 18 Weeks Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Tin 3 LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 TO-252AA DRAIN Single 36W 9 ns 36W Tc 30A SWITCHING 0.022Ohm 19 ns SILICON N-Channel 22m Ω @ 30A, 10V 2.2V @ 11μA 1600pF @ 30V 10nC @ 4.5V 3ns 20V 60V 30A Tc 120A 4.5V 10V ±20V
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0.00000000 download Through Hole Tube 2008 OptiMOS™ no Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead 3 TO-251-3 Stub Leads, IPak Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 4 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Not Halogen Free 120V 136W Tc 75A SWITCHING 0.011Ohm SILICON N-Channel 11m Ω @ 75A, 10V 4V @ 83μA 4310pF @ 60V 65nC @ 10V 75A Tc 120 mJ 10V ±20V
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0.00000000 download Through Hole Tube 2003 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 80A 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 unknown Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 300W 300W Tc 80A SWITCHING 0.009Ohm SILICON N-Channel 7.1m Ω @ 67A, 10V 2V @ 250μA 6820pF @ 25V 233nC @ 10V 20V 80A Tc 4.5V 10V ±20V
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0.00000000 download 18 Weeks CoolMOS™ Active 1 (Unlimited) ROHS3 Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 156W Tc N-Channel 500m Ω @ 6.6A, 10V 3.5V @ 740μA 1700pF @ 100V 68nC @ 10V 11A Tc 900V 10V ±20V
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0.00000000 download 13 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 8Ohm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 130W 17 ns 130W Tc 42A SWITCHING 33 ns SILICON N-Channel 8m Ω @ 42A, 10V 3V @ 250μA 2900pF @ 25V 66nC @ 5V 150ns 70 ns 16V 55V 89A 42A Tc 4.5V 10V ±16V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 375W Tc 195A N-Channel 1.95m Ω @ 100A, 10V 2.4V @ 250μA 15330pF @ 25V 255nC @ 4.5V 195A Tc 60V 4.5V 10V ±20V
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0.00000000 Tube 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) SINGLE GULL WING 225 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 200W Tc SWITCHING 0.0053Ohm 55V SILICON N-Channel 5.3m Ω @ 101A, 10V 4V @ 250μA 5480pF @ 25V 260nC @ 10V 75A 131A Tc 55V 680A 590 mJ 10V ±20V
IPA50R650CEXKSA2 IPA50R650CEXKSA2 Infineon Technologies 0.0000
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0.00000000 download 6 Weeks Through Hole Tube 2008 CoolMOS™ CE yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 6 ns 500V 27.2W Tc 4.6A SWITCHING 0.65Ohm 27 ns SILICON N-Channel 650m Ω @ 1.8A, 13V 3.5V @ 150μA 342pF @ 100V 15nC @ 10V 5ns 13 ns 20V 6.1A 4.6A Tc 19A 102 mJ 13V ±20V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W 17 ns 140W Tc 42A SWITCHING 0.0075Ohm 42 ns SILICON N-Channel 7.5m Ω @ 42A, 10V 4V @ 100μA 2840pF @ 25V 95nC @ 10V 76ns 48 ns 20V 55V 42A Tc 220 mJ 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 4.9784mm RoHS Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm 79MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 Single 2.5W 15 ns 79mOhm 8-SO 2.5W Ta 3.7A 27 ns N-Channel 79mOhm @ 2.2A, 10V 2.5V @ 250μA 1820pF @ 25V 59nC @ 10V 13ns 14 ns 20V 200V 3.7A Ta 200V 1.82nF 10V ±20V 79 mΩ
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0.00000000 download Surface Mount Tape & Reel (TR) 2008 HEXFET® Obsolete 1 (Unlimited) Through Hole 175°C -55°C 4.826mm RoHS Compliant Lead Free No 6 DirectFET™ Isometric S1 No SVHC 558.8μm 3.95mm 5.9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 1.8W 7.9 ns 1.8V 11.9mOhm DIRECTFET S1 1.8W Ta 15W Tc 21 ns 12A 5.2 ns N-Channel 5.9mOhm @ 12A, 10V 2.4V @ 25μA 1190pF @ 13V 13nC @ 4.5V 20ns 6 ns 20V 25V 25V 1.8 V 12A Ta 37A Tc 25V 1.19nF 4.5V 10V ±20V 5.9 mΩ
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0.00000000 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.7442mm ROHS3 Compliant Lead Free 64A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 8mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB ISOLATED Single 63W 14 ns 4V 63W Tc 170 ns 64A SWITCHING 2kV 43 ns SILICON N-Channel 8m Ω @ 34A, 10V 4V @ 250μA 4000pF @ 25V 170nC @ 10V 100ns 70 ns 20V 55V 55V 4 V 56A 64A Tc 480 mJ 10V ±20V
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