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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Reference Standard Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Structure Halogen Free Repetitive Peak Off-state Voltage Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Max Repetitive Reverse Voltage (Vrrm) Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) Current - On State (It (AV)) (Max) Number of SCRs, Diodes
DT250N2014KOFHPSA1 DT250N2014KOFHPSA1 Infineon Technologies 0.0000
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0.00000000 download Bulk Obsolete Not Applicable Module Chassis Mount -40°C~125°C Series Connection - All SCRs 1.4kV 300mA 2V 5200A @ 50Hz 200mA 250A 2 SCRs
IRFR4105TRR IRFR4105TRR Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 1998 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 68W Tc SWITCHING 0.045Ohm 55V SILICON N-Channel 45m Ω @ 16A, 10V 4V @ 250μA 700pF @ 25V 34nC @ 10V 20A 27A Tc 55V 100A 65 mJ 10V ±20V
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0.00000000 download 12 Weeks Tube 2003 CoolMOS™ no Last Time Buy 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 38W Tc SWITCHING 600V SILICON N-Channel 1.4 Ω @ 2A, 10V 3.9V @ 135μA 400pF @ 25V 17nC @ 10V 3.2A 3.2A Tc 650V 9.6A 100 mJ 10V ±20V
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0.00000000 8 Weeks Tray 2003 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free DO-200AB, B-PUK Chassis Mount -40°C~125°C UNSPECIFIED UNSPECIFIED NOT SPECIFIED NOT SPECIFIED YES O-XXDB-X3 1 Single Halogen Free 2200V 2.2kV SCR 2.6kV 1500A 300mA 2.2V 13000A @ 50Hz 250mA 660A 1 SCR
IRF1404STRR IRF1404STRR Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2001 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.004Ohm 40V SILICON N-Channel 4m Ω @ 95A, 10V 4V @ 250μA 7360pF @ 25V 200nC @ 10V 75A 162A Tc 40V 650A 519 mJ 10V ±20V
IPP023N08N5AKSA1 IPP023N08N5AKSA1 Infineon Technologies 0.0000
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0.00000000 download 13 Weeks Through Hole Tube 2013 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead TO-220-3 Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 1 TO-220AB DRAIN Halogen Free Single 28 ns 80V 300W Tc 120A SWITCHING 0.0023Ohm 62 ns SILICON N-Channel 2.3m Ω @ 100A, 10V 3.8V @ 208μA 12100pF @ 40V 166nC @ 10V 16ns 20 ns 20V 120A Tc 480A 674 mJ 6V 10V ±20V
IRF9Z24NSTRL IRF9Z24NSTRL Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 1999 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 45W Tc SWITCHING 0.175Ohm 55V SILICON P-Channel 175m Ω @ 7.2A, 10V 4V @ 250μA 350pF @ 25V 19nC @ 10V 12A 12A Tc 55V 48A 96 mJ 10V ±20V
IPB80N06S4L07ATMA2 IPB80N06S4L07ATMA2 Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 10mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount 1.946308g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Single 10 ns 60V 79W Tc 80A 0.0064Ohm 50 ns SILICON N-Channel 6.7m Ω @ 80A, 10V 2.2V @ 40μA 5680pF @ 25V 75nC @ 10V 3ns 8 ns 16V 60V 80A Tc 4.5V 10V ±16V
GATELEADMPWHPK1258XXPSA1 GATELEADMPWHPK1258XXPSA1 Infineon Technologies 0.0000
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0.00000000 20 Weeks Active 1 (Unlimited) ROHS3 Compliant
IAUS165N08S5N029ATMA1 IAUS165N08S5N029ATMA1 Infineon Technologies 0.0000
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0.00000000 download 20 Weeks Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) ROHS3 Compliant 8-PowerSMD, Gull Wing Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 167W Tc N-Channel 2.9m Ω @ 80A, 10V 3.8V @ 108μA 6370pF @ 40V 90nC @ 10V 165A Tc 80V 6V 10V ±20V
T1590N24TOFVTXPSA1 T1590N24TOFVTXPSA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Tray 2003 Obsolete 1 (Unlimited) EAR99 Non-RoHS Compliant Lead Free DO-200AD Chassis Mount -40°C~125°C Single Halogen Free 2.4kV 2.8kV 3200A 3V 32000A @ 50Hz 300mA 1590A 1 SCR
BSL296SNH6327XTSA1 BSL296SNH6327XTSA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Obsolete 1 (Unlimited) 6 ROHS3 Compliant Lead Free AVALANCHE RATED SOT-23-6 Thin, TSOT-23-6 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED R-PDSO-G6 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE Halogen Free 100V 2W Ta 1.4A 0.56Ohm SILICON N-Channel 460m Ω @ 1.26A, 10V 1.8V @ 100μA 152.7pF @ 25V 4nC @ 5V 1.4A Ta 5.6A 15 mJ 4.5V 10V ±20V
IRL3303S IRL3303S Infineon Technologies 0.0000
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0.00000000 Tube 1997 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) D2PAK 3.8W Ta 68W Tc N-Channel 26mOhm @ 20A, 10V 1V @ 250μA 870pF @ 25V 26nC @ 4.5V 38A Tc 30V 4.5V 10V ±16V
IPD110N12N3GATMA1 IPD110N12N3GATMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2015 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 16 ns 120V 136W Tc 75A SWITCHING 0.011Ohm 24 ns SILICON N-Channel 11m Ω @ 75A, 10V 3V @ 83μA (Typ) 4310pF @ 60V 65nC @ 10V 8 ns 20V 75A Tc 120 mJ 10V ±20V
IRL8113LPBF IRL8113LPBF Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) RoHS Compliant Lead Free 105A 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 110W 110W Tc 105A N-Channel 6m Ω @ 21A, 10V 2.25V @ 250μA 2840pF @ 15V 35nC @ 4.5V 38ns 20V 30V 105A Tc 4.5V 10V ±20V
IRF6218PBF IRF6218PBF Infineon Technologies 0.0000
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0.00000000 download 14 Weeks Through Hole Tube 2003 HEXFET® Not For New Designs 1 (Unlimited) 175°C -55°C 10.5156mm ROHS3 Compliant Lead Free Tin -27A No 3 TO-220-3 No SVHC 15.24mm 4.69mm Through Hole -55°C~175°C TJ -150V MOSFET (Metal Oxide) 1 Single 250W 21 ns -5V 150mOhm TO-220AB 250W Tc -27A 35 ns P-Channel 150mOhm @ 16A, 10V 5V @ 250μA 2210pF @ 25V 110nC @ 10V 70ns 30 ns 20V -150V -150V -5 V 27A Tc 150V 2.21nF 10V ±20V 150 mΩ
IRLR7833PBF IRLR7833PBF Infineon Technologies 0.0000
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0.00000000 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W Tc SWITCHING 0.0045Ohm 30V SILICON N-Channel 4.5m Ω @ 15A, 10V 2.3V @ 250μA 4010pF @ 15V 50nC @ 4.5V 30A 140A Tc 30V 560A 530 mJ 4.5V 10V ±20V
IRFH5255TR2PBF IRFH5255TR2PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Cut Tape (CT) 2013 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5.9944mm RoHS Compliant No 8 8-PowerVDFN No SVHC 838.2μm 5mm Surface Mount MOSFET (Metal Oxide) 3.6W 1 26W 7.9 ns 1.8V 10.9mOhm 8-PQFN (5x6) 17 ns 51A 6.5 ns N-Channel 6mOhm @ 15A, 10V 2.35V @ 25μA 988pF @ 13V 14.5nC @ 10V 10.7ns 3.8 ns 20V 25V 1.8 V 15A Ta 51A Tc 25V 988pF 6 mΩ
BSZ042N06NSATMA1 BSZ042N06NSATMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Surface Mount Cut Tape (CT) 2006 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD 8 S-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.5W 60V 2.1W Ta 69W Tc 40A SWITCHING 0.0042Ohm SILICON N-Channel 4.2m Ω @ 20A, 10V 2.8V @ 36μA 2000pF @ 30V 27nC @ 10V 7ns 20V 17A Ta 40A Tc 44 pF 6V 10V ±20V
IPP60R385CPXKSA1 IPP60R385CPXKSA1 Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Tube 2007 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 83W Tc SWITCHING 0.385Ohm 600V SILICON N-Channel 385m Ω @ 5.2A, 10V 3.5V @ 340μA 790pF @ 100V 22nC @ 10V 9A 9A Tc 650V 27A 227 mJ 10V ±20V
BSS131E6327 BSS131E6327 Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 1999 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead 100mA 3 LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 unknown Surface Mount -55°C~150°C TJ 240V MOSFET (Metal Oxide) ENHANCEMENT MODE 1A e3 MATTE TIN DUAL GULL WING 3 FET General Purpose Power Not Qualified 240V 1 SINGLE WITH BUILT-IN DIODE 360mW 360mW Ta 110mA SWITCHING 26Ohm SILICON N-Channel 14 Ω @ 100mA, 10V 1.8V @ 56μA 77pF @ 25V 3.1nC @ 10V 8ns 20V 110mA Ta 5 pF 4.5V 10V ±20V
F43L50R07W2H3FB11BPSA1 F43L50R07W2H3FB11BPSA1 Infineon Technologies 0.0000
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0.00000000 Discontinued 1 (Unlimited) ROHS3 Compliant
IRLML6344TRPBF IRLML6344TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 3.04mm ROHS3 Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.12mm 1.4mm 37MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 1 FET General Purpose Power 1 Single 1.3W 4.2 ns 800mV 1.3W Ta 15 ns 5A 150°C SWITCHING 22 ns SILICON N-Channel 29m Ω @ 5A, 4.5V 1.1V @ 10μA 650pF @ 25V 6.8nC @ 4.5V 5.6ns 9.1 ns 12V 30V 800 mV 5A 5A Ta 2.5V 4.5V ±12V
IRF7341PBF IRF7341PBF Infineon Technologies 0.0000
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0.00000000 download 22 Weeks Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ IRF7341PBF 2W 2 N-Channel (Dual) 50m Ω @ 4.7A, 10V 1V @ 250μA 740pF @ 25V 36nC @ 10V Logic Level Gate 4.7A 55V
IPC028N03L3X1SA1 IPC028N03L3X1SA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Bulk 2013 OptiMOS™ 3 Active 1 (Unlimited) ROHS3 Compliant Lead Free Die Surface Mount MOSFET (Metal Oxide) Halogen Free Sawn on foil N-Channel 50mOhm @ 2A, 10V 2.2V @ 250μA 30V 10V
BSS138W E6327 BSS138W E6327 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2007 SIPMOS® Obsolete 1 (Unlimited) RoHS Compliant SC-70, SOT-323 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE YES FET General Purpose Power Single 500mW Ta N-Channel 3.5 Ω @ 220mA, 10V 1.4V @ 26μA 43pF @ 25V 1.5nC @ 10V 0.28A 280mA Ta 60V 4.5V 10V ±20V
41040374AWXPSA1 41040374AWXPSA1 Infineon Technologies 0.0000
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0.00000000 Obsolete 1 (Unlimited)
IRFH5304TR2PBF IRFH5304TR2PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Cut Tape (CT) 2010 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5mm RoHS Compliant No 8 8-PowerVDFN No SVHC 810μm 5.0038mm Surface Mount MOSFET (Metal Oxide) 3.6W 1 Single 46W 13 ns 2.35V 4.5mOhm 8-PQFN (5x6) 29 ns 79A 12 ns N-Channel 4.5mOhm @ 47A, 10V 2.35V @ 50μA 2360pF @ 10V 41nC @ 10V 25ns 6.6 ns 20V 30V 2.35 V 22A Ta 79A Tc 30V 1.65nF 4 mΩ
AUIRF1404ZS AUIRF1404ZS Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Surface Mount Tube 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 18 ns 2V 200W Tc 160A SWITCHING 36 ns SILICON N-Channel 3.7m Ω @ 75A, 10V 4V @ 250μA 4340pF @ 25V 150nC @ 10V 110ns 58 ns 20V 40V 160A Tc 480 mJ 10V ±20V
IRF6622TR1PBF IRF6622TR1PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Cut Tape (CT) 2006 HEXFET® Obsolete 1 (Unlimited) 150°C -40°C 4.826mm RoHS Compliant Lead Free 15A No 5 DirectFET™ Isometric SQ No SVHC 506μm 3.95mm 6.3MOhm Surface Mount -40°C~150°C TJ 25V MOSFET (Metal Oxide) 34W 9.4 ns 8.9mOhm DIRECTFET™ SQ 2.2W Ta 34W Tc 12A 13 ns N-Channel 6.3mOhm @ 15A, 10V 2.35V @ 25μA 1450pF @ 13V 17nC @ 4.5V 16ns 4.6 ns 20V 25V 1.8 V 15A Ta 59A Tc 25V 1.45nF 4.5V 10V ±20V 6.3 mΩ
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