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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Reference Standard Number of Elements Configuration Diode Type Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Output Current Forward Current Case Connection Structure Halogen Free Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Reverse Voltage Recovery Time Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Test Condition Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) Current - On State (It (AV)) (Max) Number of SCRs, Diodes DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
BSP315P-E6327 BSP315P-E6327 Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 1999 SIPMOS® Obsolete 1 (Unlimited) 150°C -55°C Non-RoHS Compliant Contains Lead -1.17A 4 TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ -60V MOSFET (Metal Oxide) 1 1.8W PG-SOT223-4 1.8W Ta 1.17A P-Channel 800mOhm @ 1.17A, 10V 2V @ 160μA 160pF @ 25V 7.8nC @ 10V 20V 1.17A Ta 60V 160pF 4.5V 10V ±20V 800 mΩ
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0.00000000 download 15 Weeks Surface Mount Tube 2003 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 57A 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.572mm 9.65mm 12mOhm Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 92W 14 ns 4V 92W Tc 57A SWITCHING 35 ns SILICON N-Channel 12m Ω @ 34A, 10V 4V @ 250μA 1690pF @ 25V 65nC @ 10V 62ns 38 ns 20V 60V 60V 4 V 57A Tc 10V ±20V
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0.00000000 download Screw Bulk 2012 Obsolete Not Applicable 150°C -40°C RoHS Compliant Lead Free No 171 Module Chassis Mount Standard 270A 171A Not Halogen Free Standard Recovery >500ns, > 200mA (Io) 20mA @ 1400V 1.26V @ 500A -40°C~150°C 20mA 1.4kV 6.6kA 1 Pair Common Cathode 5.6kA 1400V 1.4kV
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0.00000000 download Tube 2000 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE 245 30 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 45W Tc SWITCHING 0.08Ohm 55V SILICON N-Channel 65m Ω @ 10A, 10V 2V @ 250μA 480pF @ 25V 15nC @ 5V 17A 17A Tc 55V 72A 68 mJ 4V 10V ±16V
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0.00000000 download 18 Weeks Tube 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 95W Tc SWITCHING 0.12Ohm 600V SILICON N-Channel 120m Ω @ 8.2A, 10V 4V @ 410μA 1544pF @ 400V 36nC @ 10V 26A Tc 600V 78A 82 mJ 10V ±20V
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0.00000000 download 14 Weeks Through Hole Tube 2001 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free Tin 116A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 7MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 130W 11 ns 1V 180W Tc 84 ns 116A SWITCHING 23 ns SILICON N-Channel 7m Ω @ 60A, 10V 1V @ 250μA 3290pF @ 25V 60nC @ 4.5V 160ns 66 ns 16V 30V 30V 1 V 75A 116A Tc 400A 290 mJ 4.5V 10V ±16V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W 16 ns 110W Tc 42A SWITCHING 0.026Ohm 65 ns SILICON N-Channel 26m Ω @ 25A, 10V 4V @ 250μA 2400pF @ 25V 110nC @ 10V 90ns 66 ns 20V 75V 42A Tc 170A
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0.00000000 download Surface Mount Tape & Reel (TR) 2011 Obsolete 1 (Unlimited) RoHS Compliant 6-VSSOP, SC-88, SOT-363 Surface Mount BCR116S 250mW 250mW PG-SOT363-6 100mA 50V 300mV 2 NPN - Pre-Biased (Dual) 50V 100mA 70 @ 5mA 5V 300mV @ 500μA, 10mA 150MHz 4.7kOhms 47kOhms
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0.00000000 download 18 Weeks Tube CoolSiC™+ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant PD-CASE TO-247-3 Through Hole e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 175°C 2 COMMON CATHODE, 2 ELEMENTS Silicon Carbide Schottky EFFICIENCY 1 650V 87A CATHODE No Recovery Time > 500mA (Io) 210μA @ 650V 1.7V @ 20A -55°C~175°C 650V 20A DC 210μA 0ns 112W 590pF @ 1V 1MHz
SPD02N50C3BTMA1 SPD02N50C3BTMA1 Infineon Technologies 1.5831
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0.00000000 download 52 Weeks Tape & Reel (TR) 2005 no Obsolete 1 (Unlimited) 2 RoHS Compliant AVALANCHE RATED compliant ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 150°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN N-CHANNEL 3Ohm 500V METAL-OXIDE SEMICONDUCTOR SILICON 1.8A 5.4A 50 mJ
AUIRFS3607 AUIRFS3607 Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Surface Mount Tube 2011 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 140W 16 ns 2V 140W Tc 80A SWITCHING 0.009Ohm 43 ns SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 80A Tc 10V ±20V
IRF8010PBF IRF8010PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 80A No 3 TO-220-3 No SVHC 8.763mm 4.69mm 15Ohm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 260W 15 ns 4V 260W Tc 150 ns 80A SWITCHING 61 ns SILICON N-Channel 15m Ω @ 45A, 10V 4V @ 250μA 3830pF @ 25V 120nC @ 10V 130ns 120 ns 20V 100V 100V 4 V 75A 80A Tc 10V ±20V
IRLR3103 IRLR3103 Infineon Technologies 0.0000
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0.00000000 Tube 1998 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE GULL WING 245 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 107W Tc SWITCHING 0.019Ohm 30V SILICON N-Channel 19m Ω @ 33A, 10V 1V @ 250μA 1600pF @ 25V 50nC @ 4.5V 20A 55A Tc 30V 220A 240 mJ 4.5V 10V ±16V
SIGC42T60UNX7SA1 SIGC42T60UNX7SA1 Infineon Technologies 0.0000
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0.00000000 Last Time Buy 1 (Unlimited) ROHS3 Compliant Die Surface Mount -55°C~150°C TJ Standard Die 3.15V @ 15V, 50A NPT 600V 50A 400V, 50A, 6.8Ohm, 15V 150A 48ns/350ns
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0.00000000 download 2016 no Last Time Buy 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free Die Surface Mount -55°C~150°C TJ Standard UPPER NO LEAD NOT SPECIFIED NOT SPECIFIED 3 YES S-XUUC-N3 Not Qualified 1 SINGLE Halogen Free N-CHANNEL 600V 3.15V POWER CONTROL SILICON 600V 79 ns 3.15V @ 15V, 50A 370 ns NPT 50A 400V, 50A, 6.8 Ω, 15V 150A 48ns/350ns
IRLBD59N04ETRLP IRLBD59N04ETRLP Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2001 HEXFET® Obsolete 1 (Unlimited) TO-263-6, D2Pak (5 Leads + Tab), TO-263BA Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 130W Tc N-Channel 18m Ω @ 35A, 10V 2V @ 250μA 2190pF @ 25V 50nC @ 5V 59A Tc 40V 5V 10V ±10V
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0.00000000 download Surface Mount Cut Tape (CT) 2013 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5mm RoHS Compliant No 8 8-PowerVDFN No SVHC 810μm 5.1562mm Surface Mount MOSFET (Metal Oxide) 3.6W 1 156W 21 ns 1V 2.7mOhm 8-PQFN (5x6) 38 ns 100A 31 ns N-Channel 2.4mOhm @ 50A, 10V 2.5V @ 150μA 4730pF @ 25V 82nC @ 10V 54ns 21 ns 16V 40V 1 V 29A Ta 100A Tc 40V 4.73nF 2.4 mΩ
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0.00000000 download Surface Mount Tube 2011 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 5mm ROHS3 Compliant Lead Free 8 HIGH RELIABILITY 8-SOIC (0.154, 3.90mm Width) No SVHC 1.5mm 4mm 17.9MOhm Surface Mount -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING 260 30 IRL6372PBF FET General Purpose Power Not Qualified 2W 2 Dual 2W 5.9 ns 1.1V 20 ns 8.1A SWITCHING METAL-OXIDE SEMICONDUCTOR 34 ns SILICON 2 N-Channel (Dual) 17.9m Ω @ 8.1A, 4.5V 1.1V @ 10μA 1020pF @ 25V 11nC @ 4.5V 13ns 15 ns 12V 30V Logic Level Gate 1.1 V 30V 65A
IAUC28N08S5L230ATMA1 IAUC28N08S5L230ATMA1 Infineon Technologies 0.0000
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0.00000000 16 Weeks Automotive, AEC-Q101, OptiMOS™-5 Active 1 (Unlimited) ROHS3 Compliant 8-PowerTDFN Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 38W Tc N-Channel 23m Ω @ 14A, 10V 2V @ 11μA 867pF @ 40V 15.1nC @ 10V 28A Tc 80V 4.5V 10V ±20V
IPS10N03LA G IPS10N03LA G Infineon Technologies 0.0000
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0.00000000 download Tube 2008 OptiMOS™ Obsolete 3 (168 Hours) 3 EAR99 RoHS Compliant LOGIC LEVEL COMPATIBLE TO-251-3 Stub Leads, IPak compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-251AA 52W Tc SWITCHING 0.0104Ohm 25V SILICON N-Channel 10.4m Ω @ 30A, 10V 2V @ 20μA 1358pF @ 15V 11nC @ 5V 30A 30A Tc 25V 210A 80 mJ 4.5V 10V ±20V
IPW60R041P6FKSA1 IPW60R041P6FKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE 29 ns 600V 481W Tc 77.5A SWITCHING 0.041Ohm 90 ns SILICON N-Channel 41m Ω @ 35.5A, 10V 4.5V @ 2.96mA 8180pF @ 100V 170nC @ 10V 27ns 5 ns 30V 77.5A Tc 267A 1954 mJ 10V ±20V
AUIRF7313Q AUIRF7313Q Infineon Technologies 0.0000
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0.00000000 download Tube 2014 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 RoHS Compliant 8-SOIC (0.154, 3.90mm Width) compliant Surface Mount -55°C~175°C TJ ENHANCEMENT MODE 8541.29.00.95 GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 FET General Purpose Power 2.4W AEC-Q101 2 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE MS-012AA 2.4W SWITCHING 0.029Ohm 30V METAL-OXIDE SEMICONDUCTOR SILICON 2 N-Channel (Dual) 29m Ω @ 6.9A, 10V 3V @ 250μA 755pF @ 25V 33nC @ 10V Logic Level Gate 6.9A 6.9A 30V 58A 450 mJ
IRL3715STRR IRL3715STRR Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2001 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) D2PAK 3.8W Ta 71W Tc N-Channel 14mOhm @ 26A, 10V 3V @ 250μA 1060pF @ 10V 17nC @ 4.5V 54A Tc 20V 4.5V 10V ±20V
IRLR3717TRPBF IRLR3717TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 89W Tc SWITCHING 0.004Ohm 20V SILICON N-Channel 4m Ω @ 15A, 10V 2.45V @ 250μA 2830pF @ 10V 31nC @ 4.5V 30A 120A Tc 20V 460A 460 mJ 4.5V 10V ±20V
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0.00000000 download Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 6 EAR99 10.67mm ROHS3 Compliant Tin No 7 ULTRA LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING R-PSSO-G6 1 TO-263CB DRAIN Single 370W 17 ns 370W Tc 240A SWITCHING 0.0026Ohm 100 ns SILICON N-Channel 2.6m Ω @ 160A, 10V 4V @ 250μA 9200pF @ 50V 240nC @ 10V 80ns 64 ns 20V 75V 240A Tc 320 mJ 10V ±20V
IPI126N10N3 G IPI126N10N3 G Infineon Technologies 0.0000
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0.00000000 download Tube 2011 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 94W Tc SWITCHING 0.0126Ohm 100V SILICON N-Channel 12.6m Ω @ 46A, 10V 3.5V @ 46μA 2500pF @ 50V 35nC @ 10V 58A 58A Tc 100V 232A 70 mJ 6V 10V ±20V
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0.00000000 download 16 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 6 EAR99 10.67mm ROHS3 Compliant Tin No 7 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-263CB DRAIN 375W 14 ns 2V 375W Tc 240A SWITCHING 118 ns SILICON N-Channel 2.1m Ω @ 168A, 10V 4V @ 250μA 8850pF @ 50V 300nC @ 10V 61ns 69 ns 20V 60V 240A Tc 303 mJ 10V ±20V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 Single 370W 17 ns 4V 370W Tc 240A 100 ns N-Channel 2.6m Ω @ 160A, 10V 4V @ 250μA 9200pF @ 50V 240nC @ 10V 80ns 64 ns 20V 75V 260A 240A Tc 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2005 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 330W 16 ns 330W Tc 260A SWITCHING 40 ns SILICON N-Channel 3m Ω @ 38A, 10V 2.5V @ 250μA 5890pF @ 15V 110nC @ 4.5V 160ns 57 ns 20V 30V 75A 260A Tc 4.5V 10V ±20V
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