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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
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0.00000000 download 8 Weeks Through Hole Tube 2008 CoolMOS™ yes Last Time Buy 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 TO-220AB ISOLATED Halogen Free Single 66W 35 ns 500V 66W Tc 7.1A SWITCHING 0.52Ohm 80 ns SILICON N-Channel 520m Ω @ 3.8A, 10V 3.5V @ 250μA 680pF @ 100V 17nC @ 10V 14ns 17 ns 20V 550V 7.1A Tc 15A 166 mJ 10V ±20V
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0.00000000 download 52 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.26mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 Not Qualified 1 TO-252AA DRAIN Single 55W 10 ns 55W Tc 58A SWITCHING 0.0089Ohm 11 ns SILICON N-Channel 8.9m Ω @ 25A, 10V 2.35V @ 25μA 1350pF @ 15V 16nC @ 4.5V 47ns 10 ns 20V 30V 50A 58A Tc 260A 74 mJ 4.5V 10V ±20V
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0.00000000 download Through Hole Tube 2004 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 80A AVALANCHE RATED TO-262-3 Long Leads, I2Pak, TO-262AA unknown Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 300W Tc 80A 0.0037Ohm SILICON N-Channel 3.7m Ω @ 80A, 10V 4V @ 250μA 6980pF @ 25V 170nC @ 10V 80A Tc 320A 810 mJ 10V ±20V
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0.00000000 Not For New Designs 2 (1 Year) ROHS3 Compliant
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING R-PSSO-G2 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 14 ns 60V 107W Tc 90A 0.0046Ohm 80 ns SILICON N-Channel 4.6m Ω @ 90A, 10V 2.2V @ 60μA 8180pF @ 25V 110nC @ 10V 4ns 13 ns 16V 90A Tc 4.5V 10V ±16V
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0.00000000 download 11 Weeks Through Hole Tube 2009 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.73mm RoHS Compliant Tin No 3 ULTRA-LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 2.39mm 6.22mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 260 30 FET General Purpose Power 1 DRAIN Single 140W 24 ns 1V 140W Tc 63A SWITCHING 33 ns SILICON N-Channel 14m Ω @ 38A, 10V 2.5V @ 100μA 3980pF @ 25V 48nC @ 4.5V 110ns 48 ns 16V 100V 1 V 42A 42A Tc 250A
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0.00000000 download 13 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Halogen Free Single 375W 33 ns 100V 375W Tc 120A SWITCHING 0.002Ohm 77 ns SILICON N-Channel 2m Ω @ 100A, 10V 3.8V @ 270μA 15600pF @ 50V 210nC @ 10V 26ns 29 ns 20V 100V 120A Tc 480A 979 mJ 6V 10V ±20V
IPD06P002NSAUMA1 IPD06P002NSAUMA1 Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) OptiMOS™ Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 125W Tc P-Channel 38m Ω @ 35A, 10V 4V @ 1.7mA 2500pF @ 30V 63nC @ 10V 35A Tc 60V 10V ±20V
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IPB60R099C6ATMA1 IPB60R099C6ATMA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Tape & Reel (TR) 2008 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 278W Tc SWITCHING 0.099Ohm 600V SILICON N-Channel 99m Ω @ 18.1A, 10V 3.5V @ 1.21mA 2660pF @ 100V 119nC @ 10V 37.9A 37.9A Tc 600V 112A 796 mJ 10V ±20V
IRF6616TR1 IRF6616TR1 Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2005 HEXFET® Obsolete 3 (168 Hours) SMD/SMT 150°C -40°C Non-RoHS Compliant Lead Free 19A 7 DirectFET™ Isometric MX No SVHC Surface Mount -40°C~150°C TJ 30V MOSFET (Metal Oxide) 2.8W 1.8V 3.7mOhm DIRECTFET™ MX 15 ns 2.8W Ta 89W Tc 19A 21 ns N-Channel 5mOhm @ 19A, 10V 2.25V @ 250μA 3765pF @ 20V 44nC @ 4.5V 19ns 4.4 ns 30V 40V 40V 1.8 V 19A Ta 106A Tc 30V 3.765nF 4.5V 10V ±20V 5 mΩ
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0.00000000 Tube 2001 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant ULTRA LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 SINGLE NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.0078Ohm 75V SILICON N-Channel 7.8m Ω @ 78A, 10V 4V @ 250μA 5600pF @ 25V 250nC @ 10V 75A 100A Tc 75V 520A 390 mJ 10V ±20V
SPP100N06S2L-05 SPP100N06S2L-05 Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2003 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 100A 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 unknown Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 300W Tc 100A SWITCHING 0.0059Ohm SILICON N-Channel 4.7m Ω @ 80A, 10V 2V @ 250μA 7530pF @ 25V 230nC @ 10V 100A Tc 400A 810 mJ 10V ±20V
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0.00000000 download 18 Weeks Tube 2014 CoolMOS™ P7 Active Not Applicable 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack 20.7mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 24W 17 ns 24W Tc 12A 150°C SWITCHING 0.28Ohm 60 ns SILICON N-Channel 280m Ω @ 3.8A, 10V 4V @ 190μA 761pF @ 400V 18nC @ 10V 20V 600V 12A Tc 36A 38 mJ 10V ±20V
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0.00000000 Tape & Reel (TR) HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 8-SO 2.5W Ta N-Channel 9mOhm @ 12A, 10V 2V @ 250μA 2480pF @ 10V 35nC @ 4.5V 12A Ta 20V 2.8V 10V ±12V
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0.00000000 download Tube 2006 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-220-3 compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 81.1W Ta 0.13Ohm 60V SILICON P-Channel 130m Ω @ 13.2A, 10V 4V @ 1mA 860pF @ 25V 28nC @ 10V 18.6A 18.7A Ta 60V 74.4A 150 mJ 10V ±20V
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0.00000000 download 8 Weeks Tape & Reel (TR) 2003 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.1W Ta 110W Tc SWITCHING 0.117Ohm 100V SILICON P-Channel 117m Ω @ 14A, 10V 4V @ 250μA 1450pF @ 25V 110nC @ 10V 23A 23A Tc 100V 92A 84 mJ 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2011 SIPMOS® Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) SOT-23-3 360mW Ta 170mA N-Channel 6Ohm @ 170mA, 10V 1.8V @ 50μA 68pF @ 25V 2.8nC @ 7V Depletion Mode 170mA Ta 100V 68pF 0V 10V ±20V 6 Ω
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 6.7056mm RoHS Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) Single 110W 13 ns 8.4mOhm D-Pak 110W Tc 56A 55 ns N-Channel 8.4mOhm @ 47A, 10V 4V @ 100μA 2290pF @ 50V 69nC @ 10V 35ns 46 ns 20V 60V 56A Tc 60V 2.29nF 10V ±20V 8.4 mΩ
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0.00000000 download 10 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 10mm ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Halogen Free Single 158W 11 ns 55V 158W Tc 80A 0.0147Ohm 46 ns SILICON N-Channel 10.7m Ω @ 40A, 10V 2V @ 93μA 2075pF @ 25V 80nC @ 10V 32ns 13 ns 20V 55V 80A Tc 280 mJ 4.5V 10V ±20V
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