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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRFR12N25D IRFR12N25D Infineon Technologies 0.0000
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0.00000000 download Tube 2001 HEXFET® Obsolete 1 (Unlimited) EAR99 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 144W Tc N-Channel 260m Ω @ 8.4A, 10V 5V @ 250μA 810pF @ 25V 35nC @ 10V 14A Tc 250V 10V ±30V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free DirectFET™ Isometric MF 2.3mOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 74W Tc 135A N-Channel 2.3m Ω @ 81A, 10V 3.9V @ 100μA 3913pF @ 25V 81nC @ 10V 135A Tc 40V 6V 10V ±20V
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0.00000000 download 10 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 162A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm 4mOhm Surface Mount -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 3.8W 17 ns 3.8W Ta 200W Tc 162A SWITCHING 72 ns SILICON N-Channel 4m Ω @ 95A, 10V 4V @ 250μA 7360pF @ 25V 200nC @ 10V 140ns 26 ns 20V 40V 75A 162A Tc 650A 10V ±20V
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0.00000000 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 130W Tc SWITCHING 0.044Ohm 100V SILICON N-Channel 44m Ω @ 16A, 10V 4V @ 250μA 1960pF @ 25V 71nC @ 10V 33A 33A Tc 100V 110A 185 mJ 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 OptiMOS™ Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free 100A AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN GULL WING 260 40 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 300W 300W Tc 100A 0.003Ohm 77 ns SILICON N-Channel 3m Ω @ 80A, 10V 4V @ 230μA 21620pF @ 25V 480nC @ 10V 67ns 60 ns 20V 55V 100A Tc 400A 2390 mJ 10V ±20V
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0.00000000 18 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant
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0.00000000 download 12 Weeks Tape & Reel (TR) 2011 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 71W Tc 0.0319Ohm 100V SILICON N-Channel 24m Ω @ 35A, 10V 2.4V @ 39μA 2700pF @ 25V 39nC @ 10V 35A 35A Tc 100V 140A 175 mJ 4.5V 10V ±20V
SIPC14N80C3X1SA2 SIPC14N80C3X1SA2 Infineon Technologies 0.0000
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0.00000000 16 Weeks Active 2 (1 Year) ROHS3 Compliant
IRF7702TRPBF IRF7702TRPBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2006 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 3.0988mm RoHS Compliant Lead Free No 8 8-TSSOP (0.173, 4.40mm Width) 1.0414mm 4.4958mm 14mOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 1.5W 16 ns 14mOhm 8-TSSOP 1.5W Tc -8A 320 ns P-Channel 14mOhm @ 8A, 4.5V 1.2V @ 250μA 3470pF @ 10V 81nC @ 4.5V 21ns 250 ns 8V -12V 8A Tc 12V 3.47nF 1.8V 4.5V ±8V 14 mΩ
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0.00000000 download Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -40°C~175°C TJ MOSFET (Metal Oxide) 79W Tc N-Channel 50m Ω @ 4.7A, 10V 1V @ 250μA 740pF @ 50V 42nC @ 10V 26A Tc 55V 4.5V 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.66mm ROHS3 Compliant Lead Free Tin 120A No 3 TO-220-3 No SVHC 9.02mm 4.82mm 5.8MOhm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 230mW 15 ns 4V 230W Tc 33 ns 120A SWITCHING 38 ns SILICON N-Channel 5.8m Ω @ 75A, 10V 4V @ 150μA 4750pF @ 50V 110nC @ 10V 64ns 65 ns 20V 75V 75V 4 V 120A Tc 480A 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 2001 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 142A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.826mm 7.5Ohm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 380W 22 ns 380W Tc 142A SWITCHING 84 ns SILICON N-Channel 7.5m Ω @ 85A, 10V 4V @ 250μA 7750pF @ 25V 320nC @ 10V 130ns 86 ns 20V 75V 75V 4 V 75A 142A Tc 570A 10V ±20V
IRFU1205PBF IRFU1205PBF Infineon Technologies 0.0000
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0.00000000 download 14 Weeks Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free 44A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA 6.22mm 2.3876mm 27mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 69W 7.3 ns 107W Tc 44A SWITCHING 47 ns SILICON N-Channel 27m Ω @ 26A, 10V 4V @ 250μA 1300pF @ 25V 65nC @ 10V 69ns 60 ns 20V 55V 20A 44A Tc 160A 210 mJ 10V ±20V
IRLR2905TRLPBF IRLR2905TRLPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.03Ohm 55V SILICON N-Channel 27m Ω @ 25A, 10V 2V @ 250μA 1700pF @ 25V 48nC @ 5V 20A 42A Tc 55V 160A 210 mJ 4V 10V ±16V
IRFR1205PBF IRFR1205PBF Infineon Technologies 0.0000
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0.00000000 download Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 107W Tc SWITCHING 0.027Ohm 55V SILICON N-Channel 27m Ω @ 26A, 10V 4V @ 250μA 1300pF @ 25V 65nC @ 10V 20A 44A Tc 55V 160A 210 mJ 10V ±20V
IRL3803STRLPBF IRL3803STRLPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2002 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 140A No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 6mOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 14 ns 1V 3.8W Ta 200W Tc 180 ns 140A SWITCHING 29 ns SILICON N-Channel 6m Ω @ 71A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 230ns 35 ns 16V 30V 30V 1 V 140A Tc 470A 4.5V 10V ±16V
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0.00000000 download Surface Mount Cut Tape (CT) 2015 HEXFET® Obsolete 1 (Unlimited) EAR99 150°C -55°C 4.9784mm RoHS Compliant No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm Surface Mount MOSFET (Metal Oxide) Other Transistors 2.5W 1 Single 2.5W 14 ns -6.7A 100 ns P-Channel 40m Ω @ 3.2A, 4.5V 700mV @ 250μA 1500pF @ 15V 50nC @ 4.5V 32ns 65 ns 12V 7.7A 6.7A Ta 20V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W 110W Tc 42A SWITCHING 0.0145Ohm SILICON N-Channel 14.5m Ω @ 36A, 10V 4V @ 250μA 1380pF @ 25V 44nC @ 10V 66ns 35 ns 55V 42A Tc 240A 55 mJ 10V ±20V
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0.00000000 download Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-220-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 25W Tc SWITCHING 3Ohm 600V SILICON N-Channel 3 Ω @ 1.1A, 10V 3.9V @ 80μA 200pF @ 25V 12.5nC @ 10V 1.8A 1.8A Tc 650V 5.4A 50 mJ 10V ±20V
IRF2804STRL IRF2804STRL Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2003 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 330W Tc SWITCHING 0.002Ohm 40V SILICON N-Channel 2m Ω @ 75A, 10V 4V @ 250μA 6450pF @ 25V 240nC @ 10V 75A 75A Tc 40V 1080A 540 mJ 10V ±20V
IRLL3303 IRLL3303 Infineon Technologies 0.0000
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0.00000000 Tube 1999 HEXFET® Obsolete 1 (Unlimited) 4 EAR99 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) DUAL GULL WING 245 30 YES R-PDSO-G4 Not Qualified 1 SINGLE DRAIN 1W Ta 0.031Ohm 30V SILICON N-Channel 31m Ω @ 4.6A, 10V 1V @ 250μA 840pF @ 25V 50nC @ 10V 6.5A 4.6A Ta 30V 4.5V 10V ±16V
AUIRLR2703TRL AUIRLR2703TRL Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 45W 8.5 ns 45W Tc 23A SWITCHING 0.045Ohm 12 ns SILICON N-Channel 45m Ω @ 14A, 10V 1V @ 250μA 450pF @ 25V 15nC @ 4.5V 140ns 20 ns 16V 30V 20A 20A Tc 96A 200 mJ
IRFS4010TRRPBF IRFS4010TRRPBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2008 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 375W 21 ns 375W Tc 180A SWITCHING 0.0047Ohm 100 ns SILICON N-Channel 4.7m Ω @ 106A, 10V 4V @ 250μA 9575pF @ 50V 215nC @ 10V 86ns 77 ns 20V 100V 180A Tc 720A 10V ±20V
IPP65R110CFDXKSA1 IPP65R110CFDXKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Through Hole Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 16 ns 650V 277.8W Tc 31.2A SWITCHING 68 ns SILICON N-Channel 110m Ω @ 12.7A, 10V 4.5V @ 1.3mA 3240pF @ 100V 118nC @ 10V 11ns 6 ns 20V 31.2A Tc 700V 99.6A 845 mJ 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2003 OptiMOS™ Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 50A LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ 25V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE GULL WING 220 NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 83W Tc 50A SWITCHING 0.0095Ohm SILICON N-Channel 5.9m Ω @ 30A, 10V 2V @ 40μA 2653pF @ 15V 22nC @ 5V 25ns 91A 50A Tc 225 mJ 4.5V 10V ±20V
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0.00000000 Surface Mount Tape & Reel (TR) 2000 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 42A AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc 42A SWITCHING 0.026Ohm SILICON N-Channel 26m Ω @ 25A, 10V 4V @ 250μA 2400pF @ 25V 110nC @ 10V 90ns 30A 42A Tc 170A 130 mJ 10V ±20V
IRF6637TR1 IRF6637TR1 Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2006 HEXFET® Obsolete 3 (168 Hours) SMD/SMT 150°C -40°C Non-RoHS Compliant Lead Free 14A 7 DirectFET™ Isometric MP No SVHC Surface Mount -40°C~150°C TJ 30V MOSFET (Metal Oxide) 2.3W 1.8V DIRECTFET™ MP 13 ns 2.3W Ta 42W Tc 14A 14 ns N-Channel 7.7mOhm @ 14A, 10V 2.35V @ 250μA 1330pF @ 15V 17nC @ 4.5V 15ns 3.8 ns 20V 30V 30V 1.8 V 14A Ta 59A Tc 30V 1.33nF 4.5V 10V ±20V 7.7 mΩ
IRLU3303 IRLU3303 Infineon Technologies 0.0000
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0.00000000 Tube 1998 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 68W Tc N-Channel 31m Ω @ 21A, 10V 1V @ 250μA 870pF @ 25V 26nC @ 4.5V 35A Tc 30V 4.5V 10V ±16V
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0.00000000 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFS8409 YES FET General Purpose Power Single 375W Tc N-Channel 0.75m Ω @ 100A, 10V 3.9V @ 250μA 13975pF @ 25V 460nC @ 10V 240A 240A Tc 40V 10V ±20V
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