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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Max Output Current Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRLU3715 IRLU3715 Infineon Technologies 0.0000
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0.00000000 Tube 2001 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL SINGLE 260 30 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 71W Tc SWITCHING 0.011Ohm 20V SILICON N-Channel 14m Ω @ 26A, 10V 3V @ 250μA 1060pF @ 10V 17nC @ 4.5V 49A 54A Tc 20V 200A 19 mJ 4.5V 10V ±20V
IMZ120R350M1HXKSA1 IMZ120R350M1HXKSA1 Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2005 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 40 1 SINGLE WITH BUILT-IN DIODE DRAIN 370W 19 ns 370W Tc 230A SWITCHING 99 ns SILICON N-Channel 3m Ω @ 140A, 10V 4V @ 250μA 9370pF @ 50V 240nC @ 10V 110ns 100 ns 20V 75V 195A Tc 900A 10V ±20V
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0.00000000 download Tube 2008 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-251-3 Stub Leads, IPak compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 MATTE TIN SINGLE 260 NOT SPECIFIED 3 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 94W Tc SWITCHING 0.004Ohm 30V SILICON N-Channel 3.1m Ω @ 30A, 10V 2.2V @ 250μA 5300pF @ 15V 51nC @ 10V 90A 90A Tc 30V 400A 60 mJ 4.5V 10V ±20V
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0.00000000 download 13 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 6 ns 200V 50W Tc 11.3A SWITCHING 0.125Ohm 10 ns SILICON N-Channel 125m Ω @ 5.7A, 10V 4V @ 25μA 680pF @ 100V 8.7nC @ 10V 4ns 3 ns 20V 11.3A Tc 45A 60 mJ 10V ±20V
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0.00000000 download 10 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 2.26mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 24 ns 140W Tc 42A SWITCHING 33 ns SILICON N-Channel 14m Ω @ 38A, 10V 2.5V @ 100μA 3980pF @ 25V 48nC @ 4.5V 110ns 48 ns 16V 100V 42A Tc 250A 4.5V 10V ±16V
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0.00000000 download Tape & Reel (TR) 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant Lead Free Tin 4.5A No 3 AVALANCHE RATED, HIGH VOLTAGE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 3 YES R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 50W 55 ns 50W Tc 4.5A SWITCHING 0.95Ohm 60 ns SILICON N-Channel 950m Ω @ 2.8A, 10V 5.5V @ 200μA 580pF @ 25V 22.9nC @ 10V 30ns 15 ns 20V 600V 4.5A Tc 9A 10V ±20V
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0.00000000 download 10 Weeks Surface Mount Cut Tape (CT) 2012 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Lead Free No 3 LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 1.1mm 1.3mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 260 30 3 1 1 Halogen Free Single 500mW 2.3 ns 100V 500mW Ta 190mA 150°C 6Ohm 7.4 ns SILICON N-Channel 6 Ω @ 190mA, 10V 1.8V @ 13μA 20.9pF @ 25V 0.9nC @ 10V 3.2ns 22 ns 20V 100V 190mA Ta 4.5V 10V ±20V
IRFB7430GPBF IRFB7430GPBF Infineon Technologies 0.0000
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0.00000000 Through Hole Tube 2013 HEXFET® Obsolete 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole MOSFET (Metal Oxide) 375W TO-220AB 195A N-Channel 1.3mOhm @ 100A, 10V 3.9V @ 250μA 14240pF @ 25V 460nC @ 10V 195A Tc 40V 14.24nF 6V 10V ±20V 1.3 mΩ
AUIRFS8409TRL AUIRFS8409TRL Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFS8409 YES FET General Purpose Power Single 375W Tc N-Channel 1.2m Ω @ 100A, 10V 3.9V @ 250μA 14240pF @ 25V 450nC @ 10V 195A 195A Tc 40V 10V ±20V
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0.00000000 download Surface Mount Tube 2006 HEXFET® Obsolete 1 (Unlimited) SMD/SMT 150°C -55°C 4.9784mm RoHS Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 13.4MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 2.5A 2.5W 9.4 ns 4.9V 13.4mOhm 8-SO 2.5W Ta 65 ns 10A 15 ns N-Channel 13.4mOhm @ 10A, 10V 4.9V @ 100μA 1620pF @ 25V 41nC @ 10V 8.5ns 8.6 ns 20V 80V 80V 4.9 V 10A Ta 80V 1.62nF 10V ±20V 13.4 mΩ
IRF7468 IRF7468 Infineon Technologies 0.0000
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0.00000000 Tube 2004 HEXFET® Obsolete 1 (Unlimited) 8 Non-RoHS Compliant AVALANCHE RATED 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.0155Ohm 40V SILICON N-Channel 15.5m Ω @ 9.4A, 10V 2V @ 250μA 2460pF @ 20V 34nC @ 4.5V 9.4A 9.4A Ta 40V 75A 160 mJ 4.5V 10V ±12V
IPAN60R800CEXKSA1 IPAN60R800CEXKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Through Hole Tube 2013 CoolMOS™ yes Active Not Applicable EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 27W Tc 8.4A N-Channel 800m Ω @ 2A, 10V 3.5V @ 170μA 373pF @ 100V 17.2nC @ 10V Super Junction 8.4A Tc 600V 10V ±20V
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0.00000000 download Through Hole Tube 2006 OptiMOS™ Discontinued 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB 15 ns 60V 71W Tc 45A 0.0094Ohm 20 ns SILICON N-Channel 9.4m Ω @ 45A, 10V 4V @ 34μA 3785pF @ 25V 47nC @ 10V 40ns 5 ns 20V 45A Tc 180A 97 mJ 10V ±20V
IRFP7718PBF IRFP7718PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free 3 TO-247-3 No SVHC 20.7mm 5.31mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 1 TO-247AC DRAIN Single 517W 58 ns 517W Tc 195A SWITCHING 75V 266 ns SILICON N-Channel 1.8m Ω @ 100A, 10V 3.7V @ 250μA 29550pF @ 25V 830nC @ 10V 164ns 160 ns 20V 195A Tc 75V 2004 mJ 6V 10V ±20V
IRF7207 IRF7207 Infineon Technologies 0.0000
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0.00000000 Tube 2000 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 Other Transistors 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Tc SWITCHING 0.06Ohm 20V SILICON P-Channel 60m Ω @ 5.4A, 4.5V 700mV @ 250μA 780pF @ 15V 22nC @ 4.5V 5.4A 5.4A Tc 20V 43A 140 mJ 2.7V 4.5V ±12V
BSS139 E6327 BSS139 E6327 Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2006 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-236-3, SC-59, SOT-23-3 compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 8541.21.00.95 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PDSO-G3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 360mW Ta 30Ohm 250V SILICON N-Channel 14 Ω @ 0.1mA, 10V 1V @ 56μA 76pF @ 25V 3.5nC @ 5V Depletion Mode 0.1A 100mA Ta 250V 3.3 pF 0V 10V ±20V
IRF1010ESTRLPBF IRF1010ESTRLPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2002 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 84A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Unknown 4.826mm 9.65mm 12mOhm Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 170W 12 ns 200W Tc 84A SWITCHING 48 ns SILICON N-Channel 12m Ω @ 50A, 10V 4V @ 250μA 3210pF @ 25V 130nC @ 10V 78ns 53 ns 20V 60V 4 V 75A 84A Tc 10V ±20V
IRFP1405 IRFP1405 Infineon Technologies 0.0000
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0.00000000 Bulk 2003 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AC ISOLATED 310W Tc SWITCHING 0.0053Ohm 55V SILICON N-Channel 5.3m Ω @ 95A, 10V 4V @ 250μA 5600pF @ 25V 180nC @ 10V 95A 95A Tc 55V 640A 530 mJ 10V ±20V
IPI040N06N3GXKSA1 IPI040N06N3GXKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 10.36mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-262-3 Long Leads, I2Pak, TO-262AA 9.45mm 4.52mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 3 FET General Purpose Power 1 Halogen Free Single 188W 30 ns 60V 188W Tc 90A SWITCHING 0.004Ohm 40 ns SILICON N-Channel 4m Ω @ 90A, 10V 4V @ 90μA 11000pF @ 30V 98nC @ 10V 70ns 5 ns 20V 60V 90A Tc 165 mJ 10V ±20V
SIPC06S2N06LATX2LA1 SIPC06S2N06LATX2LA1 Infineon Technologies 0.0000
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0.00000000 Obsolete 1 (Unlimited) ROHS3 Compliant
IPD60R3K3C6ATMA1 IPD60R3K3C6ATMA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ C6 Not For New Designs 1 (Unlimited) 2 6.73mm ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.41mm 6.22mm Surface Mount 3.949996g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Single 8 ns 600V 18.1W Tc 1.7A SWITCHING 40 ns SILICON N-Channel 3.3 Ω @ 500mA, 10V 3.5V @ 40μA 93pF @ 100V 4.6nC @ 10V 10ns 60 ns 30V 1.7A Tc 4A 6 mJ 10V ±20V
IRF3704ZCS IRF3704ZCS Infineon Technologies 0.0000
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0.00000000 Tube 2003 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE GULL WING 225 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 57W Tc SWITCHING 0.0079Ohm 20V SILICON N-Channel 7.9m Ω @ 21A, 10V 2.55V @ 250μA 1220pF @ 10V 13nC @ 4.5V 42A 67A Tc 20V 260A 36 mJ 4.5V 10V ±20V
SPI80N06S2L-05 SPI80N06S2L-05 Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2003 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 80A AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-262-3 Long Leads, I2Pak, TO-262AA unknown Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 300W Tc 80A SWITCHING 0.006Ohm SILICON N-Channel 4.8m Ω @ 80A, 10V 2V @ 250μA 7530pF @ 25V 230nC @ 10V 80A Tc 320A 800 mJ 4.5V 10V ±20V
AUIRF7739L2 AUIRF7739L2 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2015 HEXFET® Obsolete 1 (Unlimited) 9 EAR99 RoHS Compliant HIGH RELIABILITY DirectFET™ Isometric L8 compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM NO LEAD NOT SPECIFIED NOT SPECIFIED YES R-XBCC-N9 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 125W Tc SWITCHING 0.001Ohm 40V SILICON N-Channel 1m Ω @ 160A, 10V 4V @ 250μA 11880pF @ 25V 330nC @ 10V 46A 46A Ta 270A Tc 40V 1070A 160 mJ 10V ±20V
IRFR2905ZTRL IRFR2905ZTRL Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2003 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.0145Ohm 55V SILICON N-Channel 14.5m Ω @ 36A, 10V 4V @ 250μA 1380pF @ 25V 44nC @ 10V 42A 42A Tc 55V 240A 55 mJ 10V ±20V
IPA90R500C3XKSA2 IPA90R500C3XKSA2 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks CoolMOS™ Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 34W Tc N-Channel 500m Ω @ 6.6A, 10V 3.5V @ 740μA 1700pF @ 100V 68nC @ 10V 11A Tc 900V 10V ±20V
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0.00000000 download 14 Weeks Tape & Reel (TR) 2017 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-4, D2Pak (3 Leads + Tab), TO-263AA not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-263AB DRAIN 300W Tc 0.0048Ohm 120V SILICON N-Channel 5.1m Ω @ 100A, 10V 4V @ 240μA 11570pF @ 25V 185nC @ 10V 100A 100A Tc 120V 400A 1445 mJ 10V ±20V
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