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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Reference Standard Number of Elements Configuration JEDEC-95 Code Polarity Case Connection Halogen Free Gain Bandwidth Product Row Spacing Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Power Dissipation-Max Recovery Time Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
IRFU120NPBF IRFU120NPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 6.6mm ROHS3 Compliant Contains Lead, Lead Free 9.4A 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA No SVHC 9.75mm 2.3mm 210mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 1 FET General Purpose Power Not Qualified 1 DRAIN Single 48W 4.5 ns 4V 48W Tc 150 ns 9.4A 175°C SWITCHING 32 ns SILICON N-Channel 210m Ω @ 5.6A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 23ns 20V 100V 100V 4 V 7.7A 9.4A Tc 10V ±20V
IRF1010NL IRF1010NL Infineon Technologies 0.0000
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0.00000000 Tube 2002 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-262 180W Tc N-Channel 11mOhm @ 43A, 10V 4V @ 250μA 3210pF @ 25V 120nC @ 10V 85A Tc 55V 10V ±20V
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0.00000000 download Through Hole Tube 2006 OptiMOS™ Discontinued 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 1 SINGLE WITH BUILT-IN DIODE TO-220AB 300W 21 ns 300W Tc 100A 0.005Ohm 55V SILICON N-Channel 5m Ω @ 80A, 10V 4V @ 250μA 5110pF @ 25V 170nC @ 10V 31ns 20V 100A Tc 55V 400A 10V ±20V
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0.00000000 download Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) TO-263-7, D2Pak (6 Leads + Tab), TO-263CB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 300W Tc N-Channel 3.8m Ω @ 110A, 10V 4V @ 250μA 7580pF @ 25V 260nC @ 10V 160A Tc 75V 10V ±20V
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0.00000000 download Surface Mount Tube 2001 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 4.9784mm RoHS Compliant Lead Free 18A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) 1 6.3 mm 3.1W 15 ns 1V 6.5mOhm 8-SO 3.1W Ta 18A 22 ns N-Channel 6.5mOhm @ 15A, 4.5V 1V @ 250μA 5500pF @ 16V 60nC @ 5V 5.5ns 12 ns 12V 30V 30V 1 V 18A Ta 30V 5.5nF 4.5V ±12V 6.5 mΩ
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0.00000000 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 9.02mm 4.699mm 2.4MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB Single 380W 66 ns 2.5V 380W Tc 195A SWITCHING 110 ns SILICON N-Channel 2.4m Ω @ 165A, 10V 2.5V @ 250μA 11210pF @ 50V 140nC @ 4.5V 220ns 16V 60V 270A 195A Tc 290 mJ 4.5V 10V ±16V
IRFR3704TR IRFR3704TR Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 90W Tc N-Channel 9.5m Ω @ 15A, 10V 3V @ 250μA 1996pF @ 10V 19nC @ 4.5V 75A Tc 20V 10V ±20V
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0.00000000 download Tape & Reel (TR) 2011 Discontinued 1 (Unlimited) 4 EAR99 ROHS3 Compliant TO-261-4, TO-261AA Surface Mount 150°C TJ DUAL GULL WING BCP56 YES R-PDSO-G4 2W AEC-Q101 1 SINGLE COLLECTOR NPN AMPLIFIER SILICON NPN 100MHz 100nA ICBO 80V 1A 63 @ 150mA 2V 500mV @ 50mA, 500mA 100MHz
IPS090N03LGAKMA1 IPS090N03LGAKMA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2008 OptiMOS™ no Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-251-3 Stub Leads, IPak Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 42W 42W Tc 40A SWITCHING SILICON N-Channel 9m Ω @ 30A, 10V 2.2V @ 250μA 1600pF @ 15V 15nC @ 10V 40A Tc 30V 280A 70 mJ 4.5V 10V ±20V
IRFBA1405P IRFBA1405P Infineon Technologies 0.0000
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0.00000000 Tube 2002 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant HIGH RELIABILITY TO-273AA Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 330W Tc SWITCHING 0.005Ohm 55V SILICON N-Channel 5m Ω @ 101A, 10V 4V @ 250μA 5480pF @ 25V 260nC @ 10V 95A 174A Tc 55V 680A 560 mJ 10V ±20V
BC848CE6433HTMA1 BC848CE6433HTMA1 Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2005 yes Not For New Designs 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Lead Free Tin 100mA 3 TO-236-3, SC-59, SOT-23-3 250MHz 900μm 1.3mm Surface Mount 150°C TJ 30V DUAL GULL WING NOT SPECIFIED NOT SPECIFIED BC848 Not Qualified 330mW 1 250MHz NPN Single 330mW 30V 100mA 30V 30V SWITCHING SILICON NPN 250MHz 15nA ICBO 600mV 30V 6V 110 420 @ 2mA 5V 600mV @ 5mA, 100mA
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0.00000000 download Tape & Reel (TR) 2011 yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-243AA compliant Surface Mount 150°C TJ SINGLE FLAT NOT SPECIFIED NOT SPECIFIED BCX55 YES R-PSSO-F3 Not Qualified 2W 1 SINGLE COLLECTOR NPN SWITCHING SILICON NPN 100MHz 100nA ICBO 60V 1A 40 @ 150mA 2V 500mV @ 50mA, 500mA 100MHz
BFN39H6327XTSA1 BFN39H6327XTSA1 Infineon Technologies 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2011 Discontinued 1 (Unlimited) 4 EAR99 ROHS3 Compliant Tin 4 TO-261-4, TO-261AA Surface Mount 150°C TJ DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1.5W 1.5W 1 SINGLE COLLECTOR PNP 200mA 300V 10V SWITCHING SILICON PNP 100MHz 100nA ICBO 300V 30 30 @ 30mA 10V 500mV @ 2mA, 20mA 100MHz
IPC302N25N3X1SA1 IPC302N25N3X1SA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Bulk 2010 OptiMOS™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Die Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE UNSPECIFIED NO LEAD NOT SPECIFIED NOT SPECIFIED YES R-XXUC-N 1 SINGLE WITH BUILT-IN DIODE 0.1Ohm 250V SILICON N-Channel 100m Ω @ 2A, 10V 4V @ 270μA 1A Tj 250V 10V
IRF640NPBF IRF640NPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 1999 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 18A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 19.8mm 4.826mm 150mOhm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 1 FET General Purpose Power 1 TO-220AB DRAIN Single 150W 10 ns 2V 150W Tc 241 ns 18A 175°C SWITCHING 23 ns SILICON N-Channel 150m Ω @ 11A, 10V 4V @ 250μA 1160pF @ 25V 67nC @ 10V 19ns 5.5 ns 20V 200V 200V 4 V 18A Tc 72A 247 mJ 10V ±20V
IPI120P04P4L03AKSA1 IPI120P04P4L03AKSA1 Infineon Technologies 0.0000
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0.00000000 download 14 Weeks Through Hole Tube 2011 Automotive, AEC-Q101, OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 136W 21 ns -40V 136W Tc 120A 0.0052Ohm 85 ns SILICON P-Channel 3.4m Ω @ 100A, 10V 2.2V @ 340μA 15000pF @ 25V 234nC @ 10V 16ns 57 ns 16V 120A Tc 40V 480A 78 mJ 4.5V 10V ±16V
IPB60R199CPAATMA1 IPB60R199CPAATMA1 Infineon Technologies 0.0000
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0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, CoolMOS™ no Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 139W 10 ns 600V 139W Tc 16A SWITCHING 50 ns SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 1.1mA 1520pF @ 100V 43nC @ 10V 5ns 20V 16A Tc 436 mJ 10V ±20V
IPP048N12N3GXKSA1 IPP048N12N3GXKSA1 Infineon Technologies 0.0000
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0.00000000 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 300W 31 ns 120V 300W Tc 100A SWITCHING 0.0048Ohm 64 ns SILICON N-Channel 4.8m Ω @ 100A, 10V 4V @ 230μA 12000pF @ 60V 182nC @ 10V 55ns 19 ns 20V 100A Tc 400A 740 mJ 10V ±20V
IPW90R1K0C3FKSA1 IPW90R1K0C3FKSA1 Infineon Technologies 0.0000
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0.00000000 download 6 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AD 89W 70 ns 900V 89W Tc 5.7A SWITCHING 1Ohm 400 ns SILICON N-Channel 1 Ω @ 3.3A, 10V 3.5V @ 370μA 850pF @ 100V 34nC @ 10V 20ns 35 ns 20V 5.7A Tc 12A 97 mJ 10V ±20V
IPB120N08S403ATMA1 IPB120N08S403ATMA1 Infineon Technologies 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 30 ns 80V 278W Tc 120A 0.0025Ohm 60 ns SILICON N-Channel 2.5m Ω @ 100A, 10V 4V @ 223μA 11550pF @ 25V 167nC @ 10V 15ns 50 ns 20V 120A Tc 480A 920 mJ 10V ±20V
IRLH6224TR2PBF IRLH6224TR2PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Cut Tape (CT) 2013 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free No 8 8-PowerTDFN No SVHC 3MOhm Surface Mount MOSFET (Metal Oxide) 3.6W 3.6W 9.4 ns 800mV 3mOhm 8-PQFN (5x6) 57 ns 28A 67 ns N-Channel 3mOhm @ 20A, 4.5V 1.1V @ 50μA 3710pF @ 10V 86nC @ 10V 23ns 36 ns 12V 20V 800 mV 28A Ta 105A Tc 20V 3.71nF 3 mΩ
IRLI3803 IRLI3803 Infineon Technologies 0.0000
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0.00000000 Tube 1997 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 63W Tc SWITCHING 0.006Ohm 30V SILICON N-Channel 6m Ω @ 40A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 76A 76A Tc 30V 470A 610 mJ 4.5V 10V ±16V
IRF7204 IRF7204 Infineon Technologies 0.0000
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0.00000000 download Tube 1997 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) DUAL GULL WING 245 30 YES R-PDSO-G8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 2.5W Tc SWITCHING 0.06Ohm 20V SILICON P-Channel 60m Ω @ 5.3A, 10V 2.5V @ 250μA 860pF @ 10V 25nC @ 10V 5.3A 5.3A Ta 20V 4.5V 10V ±12V
BCV26E6327HTSA1 BCV26E6327HTSA1 Infineon Technologies 0.0000
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0.00000000 download 26 Weeks Surface Mount Tape & Reel (TR) 2006 yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free -500mA No 3 TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C TJ -30V e3 Tin (Sn) DUAL GULL WING BCV26 360mW 360mW 1 PNP Not Halogen Free Single 30V 500mA 30V 1V SILICON PNP - Darlington 200MHz 100nA ICBO 1V 40V 10V 4000 20000 @ 100mA 5V 1V @ 100μA, 100mA 200MHz
IRL1004L IRL1004L Infineon Technologies 0.0000
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0.00000000 Tube 1999 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-262 3.8W Ta 200W Tc N-Channel 6.5mOhm @ 78A, 10V 1V @ 250μA 5330pF @ 25V 100nC @ 4.5V 130A Tc 40V 4.5V 10V ±16V
IRLR8103 IRLR8103 Infineon Technologies 0.0000
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0.00000000 download Tube HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 89W Ta SWITCHING 0.0085Ohm 30V SILICON N-Channel 7m Ω @ 15A, 10V 2V @ 250μA (Min) 50nC @ 5V 89A 89A Ta 30V 350A 4.5V 10V ±20V
IRFHM3911TRPBF IRFHM3911TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8 8-PowerTDFN No SVHC 92mOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED S-PDSO-F5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 4V 2.8W Ta 29W Tc 20A SWITCHING 100V SILICON N-Channel 115m Ω @ 6.3A, 10V 4V @ 35μA 760pF @ 50V 26nC @ 10V 3.2A 3.2A Ta 20A Tc 100V 36A 41 mJ 10V ±20V
IPP80N06S2L06AKSA1 IPP80N06S2L06AKSA1 Infineon Technologies 0.0000
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0.00000000 download Tube 2006 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 10mm RoHS Compliant 3 LOGIC LEVEL COMPATIBLE TO-220-3 15.65mm 4.4mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED NO 1 TO-220AB Halogen Free Single 250W 11 ns 55V 250W Tc 80A 0.0081Ohm 60 ns SILICON N-Channel 6.3m Ω @ 69A, 10V 2V @ 180μA 3800pF @ 25V 150nC @ 10V 21ns 20 ns 20V 55V 80A Tc 4.5V 10V ±20V
IPU60R600C6AKMA1 IPU60R600C6AKMA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Tube 2008 CoolMOS™ C6 yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE 63W Tc SWITCHING 0.6Ohm 600V SILICON N-Channel 600m Ω @ 2.4A, 10V 3.5V @ 200μA 440pF @ 100V 20.5nC @ 10V 7.3A Tc 600V 19A 133 mJ 10V ±20V
SPP80N06S08NK SPP80N06S08NK Infineon Technologies 0.0000
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0.00000000 Tube Automotive, AEC-Q101, SIPMOS® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 300W Tc N-Channel 8m Ω @ 80A, 10V 4V @ 240μA 3660pF @ 25V 187nC @ 10V 80A Tc 55V 10V ±20V
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