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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRFR12N25DTRLP IRFR12N25DTRLP Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) EAR99 TO-252-3, DPak (2 Leads + Tab), SC-63 compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 144W Tc N-Channel 260m Ω @ 8.4A, 10V 5V @ 250μA 810pF @ 25V 35nC @ 10V 14A Tc 250V 10V ±30V
IRF1404STRR IRF1404STRR Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2001 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.004Ohm 40V SILICON N-Channel 4m Ω @ 95A, 10V 4V @ 250μA 7360pF @ 25V 200nC @ 10V 75A 162A Tc 40V 650A 519 mJ 10V ±20V
IRF4104 IRF4104 Infineon Technologies 0.0000
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0.00000000 Tube 2003 HEXFET® Obsolete 1 (Unlimited) 3 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 140W Tc SWITCHING 0.0055Ohm 40V SILICON N-Channel 5.5m Ω @ 75A, 10V 4V @ 250μA 3000pF @ 25V 100nC @ 10V 75A 75A Tc 40V 470A 220 mJ 10V ±20V
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0.00000000 download Tube 2004 HEXFET® Obsolete 1 (Unlimited) TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-262 3.8W Ta 170W Tc N-Channel 10mOhm @ 46A, 10V 2V @ 250μA 3600pF @ 25V 98nC @ 5V 89A Tc 55V 4V 10V ±16V
SPB80N03S2L-03 SPB80N03S2L-03 Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2003 OptiMOS™ Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 80A AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE GULL WING 220 NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W 300W Tc 80A SWITCHING 0.0035Ohm SILICON N-Channel 2.8m Ω @ 80A, 10V 2V @ 250μA 8180pF @ 25V 220nC @ 10V 20V 80A Tc 320A 4.5V 10V ±20V
IRFSL3107PBF IRFSL3107PBF Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2005 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 40 1 SINGLE WITH BUILT-IN DIODE DRAIN 370W 19 ns 370W Tc 230A SWITCHING 99 ns SILICON N-Channel 3m Ω @ 140A, 10V 4V @ 250μA 9370pF @ 50V 240nC @ 10V 110ns 100 ns 20V 75V 195A Tc 900A 10V ±20V
IPW65R280C6FKSA1 IPW65R280C6FKSA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2009 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 104W 13 ns 650V 104W Tc 13.8A SWITCHING 0.28Ohm 105 ns SILICON N-Channel 280m Ω @ 4.4A, 10V 3.5V @ 440μA 950pF @ 100V 45nC @ 10V 11ns 12 ns 20V 13.8A Tc 39A 290 mJ 10V ±20V
IRF6215LPBF IRF6215LPBF Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2005 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 10.668mm RoHS Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 110W 14 ns -4V 290mOhm TO-262 3.8W Ta 110W Tc -13A 53 ns P-Channel 290mOhm @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 36ns 37 ns 20V -150V 13A Tc 150V 860pF 10V ±20V 290 mΩ
IRFU024NPBF IRFU024NPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 17A 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 75mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 260 30 1 DRAIN Single 38W 4.9 ns 4V 45W Tc 17A SWITCHING 19 ns SILICON N-Channel 75m Ω @ 10A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 34ns 27 ns 20V 55V 55V 4 V 17A Tc 68A 10V ±20V
IRFI1310N IRFI1310N Infineon Technologies 0.0000
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0.00000000 Tube 1998 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant AVALANCHE RATED TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 56W Tc SWITCHING 0.036Ohm 100V SILICON N-Channel 36m Ω @ 13A, 10V 4V @ 250μA 1900pF @ 25V 120nC @ 10V 24A 24A Tc 100V 140A 420 mJ 10V ±20V
IRLIZ34NPBF IRLIZ34NPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Contains Lead, Lead Free Tin 20A No 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 46mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB ISOLATED Single 31W 8.9 ns 2V 37W Tc 22A SWITCHING 2kV 29 ns SILICON N-Channel 35m Ω @ 12A, 10V 2V @ 250μA 880pF @ 25V 25nC @ 5V 10ns 21 ns 16V 55V 55V 2 V 22A Tc 4V 10V ±16V
BSB019N03LX G BSB019N03LX G Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2009 OptiMOS™ Obsolete 3 (168 Hours) 3 EAR99 RoHS Compliant AVALANCHE RATED 3-WDSON compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN BOTTOM NO LEAD 260 40 3 YES R-MBCC-N3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.8W Ta 89W Tc SWITCHING 0.0019Ohm 30V SILICON N-Channel 1.9m Ω @ 30A, 10V 2.2V @ 250μA 8400pF @ 15V 92nC @ 10V 31A 32A Ta 174A Tc 30V 400A 290 mJ 4.5V 10V ±20V
SPP10N10L SPP10N10L Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2002 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 10.3A 3 AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 50W Tc 10.3A SWITCHING 0.21Ohm SILICON N-Channel 154m Ω @ 8.1A, 10V 2V @ 21μA 444pF @ 25V 22nC @ 10V 10.3A Tc 42.2A 60 mJ 4.5V 10V ±20V
IRF2903ZPBF IRF2903ZPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2005 HEXFET® Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 9.02mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 290W 24 ns 4V 290W Tc 51 ns 75A SWITCHING 0.0024Ohm 48 ns SILICON N-Channel 2.4m Ω @ 75A, 10V 4V @ 150μA 6320pF @ 25V 240nC @ 10V 100ns 37 ns 20V 30V 4 V 260A 75A Tc 820 mJ 10V ±20V
IPB80N06S208ATMA1 IPB80N06S208ATMA1 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2006 OptiMOS™ Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 215W Tc 0.0077Ohm 55V SILICON N-Channel 7.7m Ω @ 58A, 10V 4V @ 150μA 2860pF @ 25V 96nC @ 10V 80A 80A Tc 55V 320A 450 mJ 10V ±20V
IRLR8503TRRPBF IRLR8503TRRPBF Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) D-Pak 62W Tc N-Channel 16mOhm @ 15A, 10V 3V @ 250μA 1650pF @ 25V 20nC @ 5V 44A Tc 30V 4.5V 10V ±20V
IRFS4410PBF IRFS4410PBF Infineon Technologies 0.0000
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0.00000000 download Tube 2006 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 200W Tc N-Channel 10m Ω @ 58A, 10V 4V @ 150μA 5150pF @ 50V 180nC @ 10V 88A Tc 100V 10V ±20V
IRF3205Z IRF3205Z Infineon Technologies 0.0000
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0.00000000 download Tube 2001 HEXFET® Obsolete 1 (Unlimited) 3 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 170W Tc SWITCHING 0.0065Ohm 55V SILICON N-Channel 6.5m Ω @ 66A, 10V 4V @ 250μA 3450pF @ 25V 110nC @ 10V 75A 75A Tc 55V 440A 250 mJ 10V ±20V
IPL65R130C7AUMA1 IPL65R130C7AUMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2010 CoolMOS™ C7 Active 2A (4 Weeks) 4 ROHS3 Compliant Contains Lead 4 4-PowerTSFN not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NO LEAD NOT SPECIFIED NOT SPECIFIED 1 1 DRAIN Halogen Free Single 102W 11 ns 650V 102W Tc 15A SWITCHING 87 ns SILICON N-Channel 130m Ω @ 4.4A, 10V 4V @ 440μA 1670pF @ 400V 35nC @ 10V 5.3ns 12 ns 20V 650V 15A Tc 75A 89 mJ 10V ±20V
SI4435DY SI4435DY Infineon Technologies 0.0000
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0.00000000 Tube 1999 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.02Ohm 30V SILICON P-Channel 20m Ω @ 8A, 10V 1V @ 250μA 2320pF @ 15V 60nC @ 10V 8A 8A Tc 30V 50A 4.5V 10V ±20V
IRFC3107EB IRFC3107EB Infineon Technologies 0.0000
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0.00000000 Obsolete 1 (Unlimited)
SPB70N10L SPB70N10L Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2005 SIPMOS® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 70A AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 250W 250W Tc 70A SWITCHING 0.025Ohm SILICON N-Channel 16m Ω @ 50A, 10V 2V @ 2mA 4540pF @ 25V 240nC @ 10V 20V 70A Tc 280A 700 mJ 4.5V 10V ±20V
IPW60R040CFD7XKSA1 IPW60R040CFD7XKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Tube OptiMOS™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 227W Tc N-Channel 40m Ω @ 24.9A, 10V 4.5V @ 1.25mA 4354pF @ 400V 109nC @ 10V 50A Tc 600V 10V ±20V
IRL3502 IRL3502 Infineon Technologies 0.0000
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0.00000000 download Tube 1997 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 Not Qualified 1 SINGLE TO-220AB 140W Tc SWITCHING 0.007Ohm 20V SILICON N-Channel 7m Ω @ 64A, 7V 700mV @ 250μA 4700pF @ 15V 110nC @ 4.5V 110A 110A Tc 20V 4.5V 7V ±10V
AUIRLR3410 AUIRLR3410 Infineon Technologies 0.0000
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0.00000000 download 39 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 79W 7.2 ns 79W Tc 17A SWITCHING 30 ns SILICON N-Channel 105m Ω @ 10A, 10V 2V @ 250μA 800pF @ 25V 34nC @ 5V 53ns 26 ns 16V 100V 17A Tc 60A 4V 10V ±16V
IRF7220GTRPBF IRF7220GTRPBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 Single 2.5W 12mOhm 8-SO 2.5W Ta 11A P-Channel 12mOhm @ 11A, 4.5V 600mV @ 250μA 8075pF @ 10V 125nC @ 5V 420ns 1.04 μs 12V -14V 11A Ta 14V 8.075nF 2.5V 4.5V ±12V 12 mΩ
94-3451PBF 94-3451PBF Infineon Technologies 0.0000
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0.00000000 Obsolete 1 (Unlimited) ROHS3 Compliant
IRF3709ZCSTRR IRF3709ZCSTRR Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 79W Tc SWITCHING 0.0063Ohm 30V SILICON N-Channel 6.3m Ω @ 21A, 10V 2.25V @ 250μA 2130pF @ 15V 26nC @ 4.5V 42A 87A Tc 30V 350A 60 mJ 4.5V 10V ±20V
IRLR3303TRLPBF IRLR3303TRLPBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant Lead Free 35A 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) 1 57W 45mOhm D-Pak 68W Tc 35A N-Channel 31mOhm @ 21A, 10V 1V @ 250μA 870pF @ 25V 26nC @ 4.5V 200ns 16V 30V 35A Tc 30V 870pF 4.5V 10V ±16V 31 mΩ
IRL3713STRRPBF IRL3713STRRPBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2005 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 330W 16 ns 330W Tc 260A SWITCHING 40 ns SILICON N-Channel 3m Ω @ 38A, 10V 2.5V @ 250μA 5890pF @ 15V 110nC @ 4.5V 160ns 57 ns 20V 30V 75A 260A Tc 4.5V 10V ±20V
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