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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IPS60R800CEAKMA1 IPS60R800CEAKMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks 2013 yes Active 3 (168 Hours) 3 EAR99 150°C -40°C ROHS3 Compliant Contains Lead not_compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE TO-251 DRAIN Halogen Free N-CHANNEL 600V SWITCHING 0.8Ohm METAL-OXIDE SEMICONDUCTOR 600V 15.7A 72 mJ
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0.00000000 download Through Hole Tube 2000 TEMPFET® Obsolete 1 (Unlimited) 3 RoHS Compliant No 3 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 1 SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR TO-220AB DRAIN 95W 25 ns 95W Tc 22A SWITCHING 210 ns SILICON N-Channel 100m Ω @ 9.5A, 4.5V 2.5V @ 1mA 1500pF @ 25V 110ns 100 ns 10V 22A Tc 100V 88A 4.5V ±10V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2005 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.5mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 150W 30 ns 60V 150W Tc 100A 175°C 40 ns SILICON N-Channel 3.5m Ω @ 100A, 10V 4V @ 90μA 10400pF @ 25V 128nC @ 10V 20V 60V 100A Tc 400A 10V ±20V
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0.00000000 Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) SINGLE 225 30 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 107W Tc SWITCHING 0.0165Ohm 55V SILICON N-Channel 16.5m Ω @ 28A, 10V 4V @ 250μA 1696pF @ 25V 72nC @ 10V 39A 53A Tc 55V 180A 152 mJ 10V ±20V
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0.00000000 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm RoHS Compliant Lead Free 93A No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm Through Hole -55°C~175°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 DRAIN Single 79W 12 ns 2V 79W Tc 28 ns 93A SWITCHING 0.0057Ohm 15 ns SILICON N-Channel 5.7m Ω @ 15A, 10V 2.45V @ 250μA 2160pF @ 10V 27nC @ 4.5V 13ns 5.2 ns 20V 20V 2 V 93A Tc 140 mJ 4.5V 10V ±20V
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0.00000000 download Through Hole Tube 2005 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant Lead Free 36A 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 20mOhm Through Hole -55°C~175°C TJ 20V MOSFET (Metal Oxide) 1 Single 47W 3V 28mOhm I-PAK 47W Tc 36A 10 ns N-Channel 20mOhm @ 18A, 10V 3V @ 250μA 670pF @ 10V 9.7nC @ 4.5V 78ns 4.5 ns 20V 20V 20V 3 V 36A Tc 20V 670pF 4.5V 10V ±20V 20 mΩ
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0.00000000 download Surface Mount Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant No 4 DirectFET™ Isometric MX No SVHC Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 75W 16 ns 2.1W Ta 75W Tc 23A SWITCHING 0.0025Ohm 19 ns SILICON N-Channel 2.5m Ω @ 23A, 10V 2.35V @ 100μA 4110pF @ 15V 42nC @ 4.5V 34ns 19 ns 20V 30V 1.8 V 23A Ta 140A Tc 180A 230 mJ 4.5V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2000 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 14A TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 86W Tc 14A SWITCHING 0.18Ohm SILICON N-Channel 180m Ω @ 8.3A, 10V 5.5V @ 250μA 620pF @ 25V 29nC @ 10V 26ns 14A Tc 56A 130 mJ 10V ±30V
SN7002W E6433 SN7002W E6433 Infineon Technologies 0.0000
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0.00000000 download Tube 2000 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant ULTRA-LOW RESISTANCE, AVALANCHE RATED, FAST SWITCHING TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE 245 30 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 110W Tc SWITCHING 0.03Ohm 55V SILICON N-Channel 27m Ω @ 25A, 10V 2V @ 250μA 1700pF @ 25V 48nC @ 5V 42A 42A Tc 55V 160A 210 mJ 4V 10V ±16V
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0.00000000 download Tape & Reel (TR) 2006 OptiMOS™ Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 250W Tc 0.0084Ohm 55V SILICON N-Channel 6m Ω @ 69A, 10V 2V @ 180μA 3800pF @ 25V 150nC @ 10V 80A 80A Tc 55V 320A 530 mJ 4.5V 10V ±20V
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0.00000000 Tube 2001 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 3.8W Ta 71W Tc SWITCHING 0.011Ohm 20V SILICON N-Channel 14m Ω @ 26A, 10V 3V @ 250μA 1060pF @ 10V 17nC @ 4.5V 30A 54A Tc 20V 200A 19 mJ 4.5V 10V ±20V
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0.00000000 Tube 2000 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 3.8W Ta 170W Tc SWITCHING 0.056Ohm 150V SILICON N-Channel 56m Ω @ 20A, 10V 5.5V @ 250μA 2020pF @ 25V 90nC @ 10V 33A 33A Tc 150V 130A 330 mJ 10V ±30V
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