Call us: +86 0755-82563503

Currency: $ US Dollar

Items : %s%s

Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Min) Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max JEDEC-95 Code Polarity Forward Current Case Connection Structure Halogen Free Polarity/Channel Type Repetitive Peak Off-state Voltage Circuit Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Supplier Device Package Input Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Max Repetitive Reverse Voltage (Vrrm) Diode Configuration Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Recovery Time Max Collector Current Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type NTC Thermistor Input Capacitance (Cies) @ Vce Voltage - Collector Emitter Breakdown (Max) hFE Min Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Repetitive Peak Reverse Voltage Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) Current - On State (It (AV)) (Max) Number of SCRs, Diodes DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
IRFB3006PBF IRFB3006PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 4 TO-220-3 No SVHC 9.02mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE R-PSFM-T3 FET General Purpose Power 1 TO-220AB DRAIN Single 375W 16 ns 3V 375W Tc 270A SWITCHING 0.0025Ohm 118 ns SILICON N-Channel 2.5m Ω @ 170A, 10V 4V @ 250μA 8970pF @ 50V 300nC @ 10V 182ns 189 ns 20V 60V 195A Tc 320 mJ 10V ±20V
BSS139H6327XTSA1 BSS139H6327XTSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 SIPMOS® yes Active 1 (Unlimited) 3 SMD/SMT EAR99 ROHS3 Compliant Lead Free Tin No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 3.05mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 DUAL GULL WING 3 1 1 SINGLE WITH BUILT-IN DIODE Halogen Free 360mW -1.4V 250V 360mW Ta 40mA SILICON N-Channel 14 Ω @ 100μA, 10V 1V @ 56μA 76pF @ 25V 3.5nC @ 5V 5.4ns 20V 250V Depletion Mode -1.4 V 100mA Ta 0V 10V ±20V
FS50R12KE3BOSA1 FS50R12KE3BOSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 16 Weeks Screw 2002 no Active 1 (Unlimited) 28 EAR99 107.5mm ROHS3 Compliant Contains Lead 28 Module 17mm 45mm Chassis Mount 150°C TJ UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 28 Not Qualified 270W 6 Three Phase Inverter ISOLATED Not Halogen Free N-CHANNEL 270W Standard 75A 1.2kV 1.2kV SILICON 5mA 1.7V 140 ns 2.15V @ 15V, 50A 610 ns NPT Yes 3.5nF @ 25V 1200V
AUIRFZ24NSTRL AUIRFZ24NSTRL Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 16 Weeks Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier DUAL GULL WING 260 30 YES R-PDSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-263AB DRAIN 3.8W Ta 45W Tc SWITCHING 0.07Ohm 55V SILICON N-Channel 70m Ω @ 10A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 17A 17A Tc 55V 68A 71 mJ 10V ±20V
IPW60R099C6FKSA1 IPW60R099C6FKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 26 Weeks Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 278W Tc SWITCHING 0.099Ohm 600V SILICON N-Channel 99m Ω @ 18.1A, 10V 3.5V @ 1.21mA 2660pF @ 100V 119nC @ 10V 37.9A 37.9A Tc 600V 112A 796 mJ 10V ±20V
SPS03N60C3 SPS03N60C3 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 10 Weeks Tube 2006 CoolMOS™ yes Obsolete 1 (Unlimited) 3 Through Hole RoHS Compliant 3 AVALANCHE RATED TO-251-3 Stub Leads, IPak Unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 NO FET General Purpose Power Not Qualified 1 TO-251AA Single 38W 7 ns 600V 38W Tc 3.2A 64 ns SILICON N-Channel 1.4 Ω @ 2A, 10V 3.9V @ 135μA 400pF @ 25V 17nC @ 10V 3ns 12 ns 20V 650V 650V 3 V 3.2A Tc 9.6A 100 mJ 10V ±20V
BSZ096N10LS5ATMA1 BSZ096N10LS5ATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks Tape & Reel (TR) 2013 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 8-PowerTDFN not_compliant Surface Mount ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED YES S-PDSO-N3 -55°C 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL SWITCHING 0.0096Ohm 100V METAL-OXIDE SEMICONDUCTOR SILICON 11A 160A 82 mJ
IRL3502 IRL3502 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tube 1997 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 Not Qualified 1 SINGLE TO-220AB 140W Tc SWITCHING 0.007Ohm 20V SILICON N-Channel 7m Ω @ 64A, 7V 700mV @ 250μA 4700pF @ 15V 110nC @ 4.5V 110A 110A Tc 20V 4.5V 7V ±10V
IPSA70R600P7SAKMA1 IPSA70R600P7SAKMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks Tube 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 43.1W Tc SWITCHING 0.6Ohm 700V SILICON N-Channel 600m Ω @ 1.8A, 10V 3.5V @ 90μA 364pF @ 400V 10.5nC @ 400V 8.5A Tc 700V 20.5A 10V ±16V
BSS214NW L6327 BSS214NW L6327 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape & Reel (TR) 2011 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE SC-70, SOT-323 compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL GULL WING 260 40 3 YES R-PDSO-G3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 500mW Ta 0.14Ohm 20V SILICON N-Channel 140m Ω @ 1.5A, 4.5V 1.2V @ 3.7μA 143pF @ 10V 0.8nC @ 5V 1.5A 1.5A Ta 20V 2.5V 4.5V ±12V
IPI052NE7N3 G IPI052NE7N3 G Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tube 2011 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 150W Tc SWITCHING 0.0052Ohm 75V SILICON N-Channel 5.2m Ω @ 80A, 10V 3.8V @ 91μA 4750pF @ 37.5V 68nC @ 10V 80A 80A Tc 75V 320A 370 mJ 10V ±20V
IPA65R310CFDXKSA2 IPA65R310CFDXKSA2 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks CoolMOS™ CFD2 Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 32W Tc N-Channel 310m Ω @ 4.4A, 10V 4.5V @ 400μA 1100pF @ 100V 41nC @ 10V 11.4A Tc 650V 10V ±20V
AUIRLR3110Z AUIRLR3110Z Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 26 Weeks Surface Mount Tube 2011 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Tin No 3 ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 AUIRLR3110Z R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 24 ns 1V 140W Tc 42A SWITCHING 33 ns SILICON N-Channel 14m Ω @ 38A, 10V 2.5V @ 100μA 3980pF @ 25V 48nC @ 4.5V 110ns 48 ns 16V 100V 42A Tc 250A 4.5V 10V ±16V
IRLR8259PBF IRLR8259PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 8.7MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 48W 8.4 ns 1.9V 48W Tc 26 ns 57A SWITCHING 9.1 ns SILICON N-Channel 8.7m Ω @ 21A, 10V 2.35V @ 25μA 900pF @ 13V 10nC @ 4.5V 38ns 8.9 ns 20V 25V 25V 1.9 V 42A 57A Tc 67 mJ 4.5V 10V ±20V
AUIRF1405ZS-7TRL AUIRF1405ZS-7TRL Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-7, D2Pak (6 Leads + Tab), TO-263CB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 230W Tc N-Channel 4.9m Ω @ 88A, 10V 4V @ 150μA 5360pF @ 25V 230nC @ 10V 120A Tc 55V 10V ±20V
IPP120P04P404AKSA1 IPP120P04P404AKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 14 Weeks Through Hole Tube 2011 Automotive, AEC-Q101, OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 10.36mm RoHS Compliant Contains Lead 3 TO-220-3 15.95mm 4.57mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 TO-220AB DRAIN Halogen Free Single 30 ns -40V 136W Tc 120A 49 ns SILICON P-Channel 3.8m Ω @ 100A, 10V 4V @ 340μA 14790pF @ 25V 205nC @ 10V 20ns 52 ns 20V 120A Tc 40V 480A 78 mJ 10V ±20V
BAS7004SH6327XTSA1 BAS7004SH6327XTSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 4 Weeks Surface Mount Tape & Reel (TR) Active 1 (Unlimited) 6 EAR99 125°C -55°C ROHS3 Compliant Lead Free 6 6-VSSOP, SC-88, SOT-363 Surface Mount 8541.10.00.70 e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED BAS70-04S AEC-Q101 SILICON 4 Schottky 0.07A 70mA Halogen Free Single Small Signal =< 200mA (Io), Any Speed 100nA @ 50V 1V @ 15mA 150°C Max 70V 70mA 70V 2 Pair Series Connection 70mA DC 100 ps 0.25W
AUIRFS8407 AUIRFS8407 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 16 Weeks Surface Mount Tube 2011 HEXFET® Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free Tin No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) IRFS8407 1 FET General Purpose Power Single 230W 19 ns 3V 230W Tc 195A 78 ns N-Channel 1.8m Ω @ 100A, 10V 4V @ 150μA 7330pF @ 25V 225nC @ 10V 70ns 53 ns 20V 40V 3 V 195A Tc 10V ±20V
TD170N12KOFHPSA1 TD170N12KOFHPSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 6 Weeks Tray 2012 Obsolete 1 (Unlimited) 5 EAR99 RoHS Compliant HIGH RELIABILITY, UL RECOGNIZED Module compliant Chassis Mount -40°C~125°C 8541.30.00.80 UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED NO R-PUFM-X5 IEC-747-6 1 SINGLE WITH BUILT-IN DIODE ISOLATED Series Connection - SCR/Diode 1200V SCR 1.8kV 350A 300mA 1200V 2V 5200A @ 50Hz 200mA 223A 1 SCR, 1 Diode
T901N32TOFXPSA1 T901N32TOFXPSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Screw Tray 2003 Obsolete 1 (Unlimited) 4 EAR99 RoHS Compliant Lead Free 1.3kA 4 DO-200AE Chassis Mount -40°C~125°C UNSPECIFIED UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 1 Single Halogen Free 3200V PCT 3.2kV 300mA SCR 3600V 29900A 2.5V 44000A @ 50Hz 350mA 1900A 1 SCR
IRL3715ZCLPBF IRL3715ZCLPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tube 2004 HEXFET® Obsolete 1 (Unlimited) TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-262 45W Tc N-Channel 11mOhm @ 15A, 10V 2.55V @ 250μA 870pF @ 10V 11nC @ 4.5V 50A Tc 20V 4.5V 10V ±20V
TT310N24KOFHPSA1 TT310N24KOFHPSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Bulk 2003 Obsolete Not Applicable 7 EAR99 RoHS Compliant UL RECOGNIZED Module compliant Chassis Mount -40°C~125°C 8541.30.00.80 UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED NO R-XUFM-X7 IEC-747-6 2 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS ISOLATED Series Connection - All SCRs 2400V SCR 2.4kV 700A 300mA 2400V 1.5V 10000A @ 50Hz 250mA 446A 2 SCRs
T2251N70TS12PRXPSA1 T2251N70TS12PRXPSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Obsolete 1 (Unlimited) TO-200AF Chassis Mount -40°C~125°C Single 8kV 3550A 350mA 2.5V 67000A @ 50Hz 350mA 3140A 1 SCR
BCR192E6327HTSA1 BCR192E6327HTSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 26 Weeks Surface Mount Tape & Reel (TR) 2001 yes Not For New Designs 1 (Unlimited) 3 EAR99 150°C -65°C ROHS3 Compliant Lead Free Tin -100mA 3 TO-236-3, SC-59, SOT-23-3 Surface Mount -50V e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED BCR192 Not Qualified 200mW 1 PNP Not Halogen Free Single 100mA 50V 300mV SWITCHING PNP - Pre-Biased 200MHz 100nA ICBO 70 70 @ 5mA 5V 300mV @ 500μA, 10mA 200MHz 22 k Ω 47 k Ω
IRF1607 IRF1607 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tube 2001 HEXFET® Obsolete 1 (Unlimited) 3 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 380W Tc SWITCHING 0.0075Ohm 75V SILICON N-Channel 7.5m Ω @ 85A, 10V 4V @ 250μA 7750pF @ 25V 320nC @ 10V 75A 142A Tc 75V 570A 1250 mJ 10V ±20V
IRFR3708TR IRFR3708TR Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tape & Reel (TR) 2000 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 87W Tc SWITCHING 0.0125Ohm 30V SILICON N-Channel 12.5m Ω @ 15A, 10V 2V @ 250μA 2417pF @ 15V 24nC @ 4.5V 30A 61A Tc 30V 244A 213 mJ 2.8V 10V ±12V
IRF540Z IRF540Z Infineon Technologies 0.7085
Add to Cart

Min: 1

Mult: 1

0.00000000 Tube 1997 HEXFET® Obsolete 1 (Unlimited) 3 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 92W Tc SWITCHING 0.0265Ohm 100V SILICON N-Channel 26.5m Ω @ 22A, 10V 4V @ 250μA 1770pF @ 25V 63nC @ 10V 36A 36A Tc 100V 140A 120 mJ 10V ±20V
IPW90R1K0C3FKSA1 IPW90R1K0C3FKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 6 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AD 89W 70 ns 900V 89W Tc 5.7A SWITCHING 1Ohm 400 ns SILICON N-Channel 1 Ω @ 3.3A, 10V 3.5V @ 370μA 850pF @ 100V 34nC @ 10V 20ns 35 ns 20V 5.7A Tc 12A 97 mJ 10V ±20V
IRFR4615PBF IRFR4615PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free Tin No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 1.778mm 6.22mm 42MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 144W 15 ns 5V 144W Tc 33A 25 ns N-Channel 42m Ω @ 21A, 10V 5V @ 100μA 1750pF @ 50V 26nC @ 10V 35ns 20 ns 20V 150V 150V 5 V 33A Tc 10V ±20V
BSC048N025S G BSC048N025S G Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape & Reel (TR) 2008 OptiMOS™ Obsolete 1 (Unlimited) 5 EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerTDFN compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 YES R-PDSO-F5 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.8W Ta 63W Tc SWITCHING 0.0048Ohm 25V SILICON N-Channel 4.8m Ω @ 50A, 10V 2V @ 35μA 2670pF @ 15V 21nC @ 5V 19A 19A Ta 89A Tc 25V 200A 185 mJ 4.5V 10V ±20V
Settings Need Help?
Top FAQ's

How can I quickly find answers to my questions?

Please visit the Help & Support area of our website to find information regarding ordering, shipping, delivery and more.

What is my Order Status?

Registered users can track orders from their account dropdown, or click here. *Order Status may take 12 hours to update after initial order is placed.

How do I return product?

Users can begin the returns process by starting with our Returns Page.

How do I find price and availability?

Quotes can be created by registered users in myLists.

How do I create a 'HK JDW' Account?

Visit the Registration Page and enter the required information. You will receive an email confirmation when your registration is complete.

United Kingdom/GBP Summary
Fast Shipping Fast Delivery

Orders are typically delivered to United Kingdom within 48 hours depending on location.

Free Shipping Free Shipping

Free delivery to United Kingdom on orders of £33 or more. A delivery charge of £12 will be billed on all orders less than £33.

Incoterms Incoterms

DDP (Duty and customs paid by HK JDW)

Payment Options Payment Types

Credit account for qualified institutions and businesses

Payment in Advance by Wire Transfer

Visa Mastercard American Express PayPal Apple Pay Google Pay

Marketplace Marketplace Product

More Products From Fully Authorized Partners

Average Time to Ship 1-3 Days, extra ship charges may apply. Please see product page, cart, and checkout for actual ship speed.

Incoterms: CPT (Duty, customs, and applicable VAT/Tax due at time of delivery)

For more information visit Help & Support