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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Operating Temperature (Min) Subcategory Qualification Status Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Forward Current Forward Voltage Case Connection Polarity/Channel Type Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Natural Thermal Resistance Reverse Recovery Time Power Dissipation-Max Recovery Time Forward Voltage-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
MKE38RK600DFEL-TUB MKE38RK600DFEL-TUB IXYS 0.0000
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0.00000000 download Tray CoolMOS™ Active 1 (Unlimited) ROHS3 Compliant 9-SMD Module Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) N-Channel 45m Ω @ 44A, 10V 3.5V @ 3mA 6800pF @ 100V 190nC @ 10V 50A Tc 600V 10V ±20V
IXFM1627 IXFM1627 IXYS 0.0000
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0.00000000 Obsolete 1 (Unlimited) ROHS3 Compliant
IXKN75N60C IXKN75N60C IXYS 21.9775
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0.00000000 download 28 Weeks Chassis Mount, Screw Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 4 ROHS3 Compliant Lead Free No 4 AVALANCHE RATED SOT-227-4, miniBLOC 36MOhm Chassis Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Nickel (Ni) UPPER UNSPECIFIED 3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE ISOLATED 560W 560W Tc 75A SWITCHING 110 ns SILICON N-Channel 36m Ω @ 50A, 10V 3.9V @ 5mA 500nC @ 10V 30ns 10 ns 20V 600V Super Junction 75A Tc 250A 10V ±20V
IXTA1R4N120P-TRL IXTA1R4N120P-TRL IXYS 0.0000
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0.00000000 28 Weeks Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 86W Tc N-Channel 13 Ω @ 700mA, 10V 4.5V @ 100μA 666pF @ 25V 24.8nC @ 10V 1.4A Tc 1200V 10V ±30V
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0.00000000 download 24 Weeks Through Hole Tube 2002 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED Other Transistors Not Qualified 1 TO-247AD DRAIN Single 180W 180W Tc 36A SWITCHING 0.075Ohm 65 ns SILICON P-Channel 75m Ω @ 18A, 10V 5V @ 250μA 2800pF @ 25V 95nC @ 10V 37ns 28 ns 20V -100V 36A Tc 100V 144A 10V ±20V
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0.00000000 30 Weeks yes Active 2 (1 Year) 2 EAR99 RoHS Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 200W Tc SWITCHING 0.045Ohm 150V SILICON N-Channel 45m Ω @ 21A, 10V 4.5V @ 250μA 1880pF @ 25V 21nC @ 10V 42A 42A Tc 150V 100A 400 mJ 10V ±30V
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0.00000000 download Through Hole Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED, UL RECOGNIZED ISOPLUS220™ Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 ISOLATED Single 150W 150W Tc 130A SWITCHING 0.0044Ohm 53 ns SILICON N-Channel 4.4m Ω @ 25A, 10V 4V @ 250μA 7200pF @ 25V 158nC @ 10V 62ns 53 ns 55V 130A Tc 600A 500 mJ 10V ±20V
IXTQ86N25T IXTQ86N25T IXYS 0.0000
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0.00000000 26 Weeks 2012 yes Active 3 EAR99 RoHS Compliant AVALANCHE RATED TO-3P-3, SC-65-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 540W Ta SWITCHING 0.037Ohm 250V SILICON N-Channel 37m Ω @ 43A, 10V 5V @ 1mA 5330pF @ 25V 105nC @ 10V 86A 86A Tc 250V 190A 1500 mJ 10V ±30V
IXFP8N85XM IXFP8N85XM IXYS 0.0000
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0.00000000 download 19 Weeks Tube HiPerFET™ Active Not Applicable TO-220-3 Full Pack, Isolated Tab compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 33W Tc N-Channel 850m Ω @ 4A, 10V 5.5V @ 250μA 654pF @ 25V 17nC @ 10V 8A Tc 850V 10V ±30V
DSSK38-0025BS-TUB DSSK38-0025BS-TUB IXYS 0.0000
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0.00000000 download 2003 Active 2 FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOSIE, PD-CASE SCHOTTKY SINGLE GULL WING YES R-PSSO-G2 125°C -55°C IEC-60747 SILICON 2 COMMON CATHODE, 2 ELEMENTS RECTIFIER DIODE 10A SOFT RECOVERY 1 25V TO-263AB 330A CATHODE 20000μA 90W 0.61V
IXKT70N60C5 IXKT70N60C5 IXYS 0.0000
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0.00000000 Surface Mount 2 RoHS Compliant Lead Free AVALANCHE RATED TO-268-3 ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 -55°C 1 SINGLE WITH BUILT-IN DIODE TO-268AA DRAIN N-CHANNEL 68A SWITCHING 0.045Ohm METAL-OXIDE SEMICONDUCTOR SILICON 66A 600V 1950 mJ
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0.00000000 download 24 Weeks Surface Mount Tube 2013 HiPerFET™, Polar3™ Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) FET General Purpose Power Single 180W Tc 8A N-Channel 800m Ω @ 4A, 10V 5V @ 1.5mA 705pF @ 25V 13nC @ 10V 8A 8A Tc 500V 10V ±30V
IXTP1R4N60P IXTP1R4N60P IXYS 0.0000
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0.00000000 download 2 Weeks Through Hole Tube 2006 PolarHV™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free 1.4A AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 TO-220AB DRAIN Single 50W 50W Tc 1.4A SWITCHING 9Ohm 25 ns SILICON N-Channel 9 Ω @ 700mA, 10V 5.5V @ 25μA 140pF @ 25V 5.2nC @ 10V 16ns 16 ns 30V 600V 1.4A Tc 75 mJ 10V ±30V
IXFQ60N25X3 IXFQ60N25X3 IXYS 8.7798
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0.00000000 download 19 Weeks Tube HiPerFET™ yes Active 1 (Unlimited) ROHS3 Compliant TO-3P-3, SC-65-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 320W Tc N-Channel 23m Ω @ 30A, 10V 4.5V @ 1.5mA 3610pF @ 25V 50nC @ 10V 60A Tc 250V 10V ±20V
IXTY1R4N100P IXTY1R4N100P IXYS 0.0000
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0.00000000 download 24 Weeks Surface Mount Tube 2011 Polar™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 63W 63W Tc 1.4A SWITCHING 65 ns SILICON N-Channel 11 Ω @ 500mA, 10V 4.5V @ 50μA 450pF @ 25V 17.8nC @ 10V 35ns 28 ns 20V 1kV 1.4A Tc 1000V 3A 100 mJ 10V ±20V
IXFN100N10S3 IXFN100N10S3 IXYS 0.0000
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0.00000000 download Chassis Mount Tube 2001 HiPerFET™ yes Obsolete 1 (Unlimited) 4 EAR99 RoHS Compliant 4 AVALANCHE RATED SOT-227-4, miniBLOC Chassis Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 360W Tc 100A SWITCHING 0.0125Ohm 100V SILICON N-Channel 15m Ω @ 500mA, 10V 4V @ 4mA 4500pF @ 25V 180nC @ 10V 100A Tc 100V 10V ±20V
IXTA180N10T7-TRL IXTA180N10T7-TRL IXYS 0.0000
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0.00000000 24 Weeks Active TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 480W Tc N-Channel 6.4m Ω @ 25A, 10V 4.5V @ 250μA 6900pF @ 25V 151nC @ 10V 180A Tc 100V 10V ±30V
IXFX26N60Q IXFX26N60Q IXYS 0.0000
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0.00000000 download Through Hole Bulk 2002 HiPerFET™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 360W 360W Tc 26A 0.25Ohm 80 ns SILICON N-Channel 250m Ω @ 13A, 10V 4.5V @ 4mA 5100pF @ 25V 200nC @ 10V 32ns 16 ns 20V 600V 26A Tc 104A 1500 mJ 10V ±20V
IXTP12N50PM IXTP12N50PM IXYS 10.2177
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0.00000000 download Through Hole Tube 2008 Polar™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 12A 3 AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ 500V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 TO-220AB ISOLATED Single 50W 50W Tc 6A SWITCHING 0.5Ohm 65 ns SILICON N-Channel 500m Ω @ 6A, 10V 5.5V @ 250μA 1830pF @ 25V 29nC @ 10V 27ns 20 ns 30V 500V 6A 6A Tc 600 mJ 10V ±30V
IXFP72N20X3 IXFP72N20X3 IXYS 7.5331
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0.00000000 download 19 Weeks Tube HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 320W Tc N-Channel 20m Ω @ 36A, 10V 4.5V @ 1.5mA 3780pF @ 25V 55nC @ 10V 72A Tc 200V 10V ±20V
DNA30E2200PC-TUB DNA30E2200PC-TUB IXYS 0.0000
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0.00000000 download Surface Mount Tube 2013 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOW LEAKAGE CURRENT, PD-CASE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 175°C IEC-60747 SILICON 1 SINGLE Standard HIGH VOLTAGE 1 340A ANODE Standard Recovery >500ns, > 200mA (Io) 40μA @ 2200V 1.26V @ 30A -55°C~175°C 2.2kV 30A 2200V 40μA 0.25 °C/W 210W 7pF @ 700V 1MHz
MDMA425P1600PTSF MDMA425P1600PTSF IXYS 0.0000
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0.00000000 16 Weeks MDMA425P1600PTSF Active SimBus F Chassis Mount Standard 1 Independent 1600V 425A
IXFT30N50Q3 IXFT30N50Q3 IXYS 0.0000
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0.00000000 download 26 Weeks Surface Mount Tube 2011 HiPerFET™ Active 1 (Unlimited) 2 16.05mm ROHS3 Compliant 3 AVALANCHE RATED TO-268-3, D3Pak (2 Leads + Tab), TO-268AA unknown 5.1mm 14mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 690W 14 ns 690W Tc 30A SWITCHING 0.2Ohm 26 ns SILICON N-Channel 200m Ω @ 15A, 10V 6.5V @ 4mA 3200pF @ 25V 62nC @ 10V 250ns 30V 500V 30A Tc 90A 1500 mJ 10V ±20V
IXFX98N50P3 IXFX98N50P3 IXYS 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2005 HiPerFET™, Polar3™ Active 1 (Unlimited) 3 EAR99 16.13mm ROHS3 Compliant Lead Free 247 AVALANCHE RATED TO-247-3 21.34mm 5.21mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 DRAIN Single 1.3kW 35 ns 1300W Tc 98A SWITCHING 0.05Ohm 65 ns SILICON N-Channel 50m Ω @ 500mA, 10V 5V @ 8mA 13100pF @ 25V 197nC @ 10V 8ns 6 ns 30V 500V 98A Tc 245A 2000 mJ 10V ±30V
IXFX12N90Q IXFX12N90Q IXYS 0.0000
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0.00000000 download Through Hole Bulk 2003 HiPerFET™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 TO-247-3 unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 300W 300W Tc 12A SWITCHING 0.9Ohm 40 ns SILICON N-Channel 900m Ω @ 6A, 10V 5.5V @ 4mA 2900pF @ 25V 90nC @ 10V 23ns 15 ns 20V 900V 12A Tc 48A 10V ±20V
IXFD15N100-8X IXFD15N100-8X IXYS 0.0000
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0.00000000 Obsolete 1 (Unlimited)
DSEI19-06AS DSEI19-06AS IXYS 0.0000
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0.00000000 Surface Mount yes 2 EAR99 150°C -40°C 10.29mm RoHS Compliant Lead Free No TO-263-3 4.83mm 9.65mm 1.59999g 8541.10.00.80 e3 Matte Tin (Sn) GULL WING 3 R-PSSO-G2 Rectifier Diodes SILICON 1 RECTIFIER DIODE FAST RECOVERY 1 TO-263AA 20A 1.7V CATHODE 110A Single 50μA 600V 20A 50μA 600V 110A 110A 50 ns 62W 50 ns
DPG60IM300PC-TUB DPG60IM300PC-TUB IXYS 0.0000
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0.00000000 20 Weeks Tube Active 2 FREE WHEELING DIODE, LOW LEAKAGE CURRENT, PD-CASE, SNUBBER DIODE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount AVALANCHE SINGLE GULL WING YES R-PSSO-G2 150°C IEC-60747 SILICON 1 SINGLE Standard 60A FAST SOFT RECOVERY 1 300V 550A CATHODE Fast Recovery =< 500ns, > 200mA (Io) 1μA @ 300V 1.43V @ 60A -55°C~175°C 300V 60A 1μA 35ns 335W 80pF @ 150V 1MHz
IXTA70N075T2-TRL IXTA70N075T2-TRL IXYS 0.0000
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0.00000000 28 Weeks Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 150W Tc N-Channel 12m Ω @ 25A, 10V 4V @ 250μA 2725pF @ 25V 46nC @ 10V 70A Tc 75V 10V ±20V
IXFX210N17T IXFX210N17T IXYS 0.0000
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0.00000000 download Through Hole Tube 2009 GigaMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1150W Tc 210A SWITCHING 0.0075Ohm 170V SILICON N-Channel 7.5m Ω @ 60A, 10V 5V @ 4mA 18800pF @ 25V 285nC @ 10V 210A Tc 170V 580A 2000 mJ 10V ±20V
  • MKE38RK600DFEL-TUB
    MKE38RK600DFEL-TUB IXYS

    MOSFET (Metal Oxide) N-Channel Tray 45m Ω @ 44A, 10V ±20V 6800pF @ 100V 190nC @ 10V 600V 9-SMD Module

    Price: 0.0000

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  • IXFM1627
    IXFM1627 IXYS

    Price: 0.0000

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  • IXKN75N60C
    IXKN75N60C IXYS

    MOSFET (Metal Oxide) N-Channel Tube 36m Ω @ 50A, 10V ±20V 500nC @ 10V SOT-227-4, miniBLOC

    Price: 21.9775

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  • IXTA1R4N120P-TRL
    IXTA1R4N120P-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 13 Ω @ 700mA, 10V ±30V 666pF @ 25V 24.8nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • IXTH36P10
    IXTH36P10 IXYS

    MOSFET (Metal Oxide) P-Channel Tube 75m Ω @ 18A, 10V ±20V 2800pF @ 25V 95nC @ 10V 100V TO-247-3

    Price: 0.0000

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  • IXTA42N15T
    IXTA42N15T IXYS

    MOSFET (Metal Oxide) N-Channel 45m Ω @ 21A, 10V ±30V 1880pF @ 25V 21nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • IXTC220N055T
    IXTC220N055T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 4.4m Ω @ 25A, 10V ±20V 7200pF @ 25V 158nC @ 10V ISOPLUS220™

    Price: 0.0000

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  • IXTQ86N25T
    IXTQ86N25T IXYS

    MOSFET (Metal Oxide) N-Channel 37m Ω @ 43A, 10V ±30V 5330pF @ 25V 105nC @ 10V 250V TO-3P-3, SC-65-3

    Price: 0.0000

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  • IXFP8N85XM
    IXFP8N85XM IXYS

    MOSFET (Metal Oxide) N-Channel Tube 850m Ω @ 4A, 10V ±30V 654pF @ 25V 17nC @ 10V 850V TO-220-3 Full Pack, Isolated Tab

    Price: 0.0000

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  • DSSK38-0025BS-TUB
    DSSK38-0025BS-TUB IXYS

    RECTIFIER DIODE Rectifier Diode 2-Element

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  • IXKT70N60C5
    IXKT70N60C5 IXYS

    600V TO-268-3

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  • IXFA8N50P3
    IXFA8N50P3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 800m Ω @ 4A, 10V ±30V 705pF @ 25V 13nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • IXTP1R4N60P
    IXTP1R4N60P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 9 Ω @ 700mA, 10V ±30V 140pF @ 25V 5.2nC @ 10V TO-220-3

    Price: 0.0000

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  • IXFQ60N25X3
    IXFQ60N25X3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 23m Ω @ 30A, 10V ±20V 3610pF @ 25V 50nC @ 10V 250V TO-3P-3, SC-65-3

    Price: 8.7798

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  • IXTY1R4N100P
    IXTY1R4N100P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 11 Ω @ 500mA, 10V ±20V 450pF @ 25V 17.8nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63

    Price: 0.0000

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  • IXFN100N10S3
    IXFN100N10S3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 15m Ω @ 500mA, 10V ±20V 4500pF @ 25V 180nC @ 10V 100V SOT-227-4, miniBLOC

    Price: 0.0000

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  • IXTA180N10T7-TRL
    IXTA180N10T7-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 6.4m Ω @ 25A, 10V ±30V 6900pF @ 25V 151nC @ 10V 100V TO-263-7, D2Pak (6 Leads + Tab)

    Price: 0.0000

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  • IXFX26N60Q
    IXFX26N60Q IXYS

    MOSFET (Metal Oxide) N-Channel Bulk 250m Ω @ 13A, 10V ±20V 5100pF @ 25V 200nC @ 10V TO-247-3

    Price: 0.0000

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  • IXTP12N50PM
    IXTP12N50PM IXYS

    MOSFET (Metal Oxide) N-Channel Tube 500m Ω @ 6A, 10V ±30V 1830pF @ 25V 29nC @ 10V TO-220-3

    Price: 10.2177

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  • IXFP72N20X3
    IXFP72N20X3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 20m Ω @ 36A, 10V ±20V 3780pF @ 25V 55nC @ 10V 200V TO-220-3

    Price: 7.5331

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  • DNA30E2200PC-TUB
    DNA30E2200PC-TUB IXYS

    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.26V @ 30A -55°C~175°C 40μA @ 2200V 2-Termination Tube TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount

    Price: 0.0000

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  • MDMA425P1600PTSF
    MDMA425P1600PTSF IXYS

    Standard Rectifier Diode 1 Independent SimBus F Chassis Mount

    Price: 0.0000

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  • IXFT30N50Q3
    IXFT30N50Q3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 200m Ω @ 15A, 10V ±20V 3200pF @ 25V 62nC @ 10V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 0.0000

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  • IXFX98N50P3
    IXFX98N50P3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 50m Ω @ 500mA, 10V ±30V 13100pF @ 25V 197nC @ 10V TO-247-3

    Price: 0.0000

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  • IXFX12N90Q
    IXFX12N90Q IXYS

    MOSFET (Metal Oxide) N-Channel Bulk 900m Ω @ 6A, 10V ±20V 2900pF @ 25V 90nC @ 10V TO-247-3

    Price: 0.0000

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  • IXFD15N100-8X
    IXFD15N100-8X IXYS

    Price: 0.0000

    RFQ
  • DSEI19-06AS
    DSEI19-06AS IXYS

    RECTIFIER DIODE Diode Rectifier 2-Termination TO-263-3

    Price: 0.0000

    RFQ
  • DPG60IM300PC-TUB
    DPG60IM300PC-TUB IXYS

    Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 1.43V @ 60A -55°C~175°C 1μA @ 300V 2-Termination Tube TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount

    Price: 0.0000

    RFQ
  • IXTA70N075T2-TRL
    IXTA70N075T2-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 12m Ω @ 25A, 10V ±20V 2725pF @ 25V 46nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

    RFQ
  • IXFX210N17T
    IXFX210N17T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 7.5m Ω @ 60A, 10V ±20V 18800pF @ 25V 285nC @ 10V 170V TO-247-3

    Price: 0.0000

    RFQ
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