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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count JESD-30 Code Number of Channels Subcategory Qualification Status Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Forward Current Forward Voltage Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Voltage - Off State Current - Non Rep. Surge 50, 60Hz (Itsm) SCR Type Current - On State (It (AV)) (Max)
IXFX32N80P IXFX32N80P IXYS 1.3157
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0.00000000 download 30 Weeks Through Hole Tube 2006 HiPerFET™, PolarHT™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 AVALANCHE RATED TO-247-3 unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 830W 830W Tc 32A SWITCHING 0.27Ohm 85 ns SILICON N-Channel 270m Ω @ 16A, 10V 5V @ 8mA 8800pF @ 25V 150nC @ 10V 24ns 24 ns 30V 800V 32A Tc 2000 mJ 10V ±30V
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0.00000000 download 30 Weeks Through Hole Tube 2011 HiPerFET™, Polar3™ Active 1 (Unlimited) 3 EAR99 19.96mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-264-3, TO-264AA No SVHC 26.16mm 5.13mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 1 FET General Purpose Power 1 DRAIN Single 1.3kW 48 ns 5V 1300W Tc 80A SWITCHING 0.07Ohm 87 ns SILICON N-Channel 70m Ω @ 500mA, 10V 5V @ 8mA 13100pF @ 25V 190nC @ 10V 25ns 8 ns 30V 600V 80A Tc 200A 2000 mJ 10V ±30V
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0.00000000 download 19 Weeks Surface Mount Tube 2015 HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 400W Tc 24A N-Channel 175m Ω @ 12A, 10V 4.5V @ 2.5mA 1910pF @ 25V 47nC @ 10V 24A Tc 600V 10V ±30V
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0.00000000 Through Hole Tube Active 1 (Unlimited) ROHS3 Compliant TO-3P-3, SC-65-3 Through Hole MOSFET (Metal Oxide) 62A N-Channel 62A Tc 250V
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0.00000000 download Surface Mount Tube 2000 HiPerFET™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 DRAIN Single 100W 100W Tc 3.6A SWITCHING 25 ns SILICON N-Channel 3.6 Ω @ 500mA, 10V 4.5V @ 1mA 685pF @ 25V 24nC @ 10V 11ns 14 ns 20V 800V 3.6A Tc 14.4A 400 mJ 10V ±20V
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0.00000000 download 8 Weeks Through Hole Tube 2000 HiPerFET™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3 AVALANCHE RATED ISOPLUS247™ 6MOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 ISOLATED Single 400W 417W Tc 180A SWITCHING 140 ns SILICON N-Channel 6m Ω @ 500mA, 10V 4V @ 8mA 9400pF @ 25V 420nC @ 10V 90ns 55 ns 20V 70V 180A Tc 720A 10V ±20V
IXTH2N170D2 IXTH2N170D2 IXYS 16.9615
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0.00000000 download Through Hole Tube 2012 Active 1 (Unlimited) ROHS3 Compliant Lead Free TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 568W 568W Tc 2A N-Channel 6.5 Ω @ 1A, 0V 3650pF @ 10V 110nC @ 5V 20V Depletion Mode 2A Tj 1700V 0V ±20V
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0.00000000 Through Hole Tube 2012 Active 1 (Unlimited) ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole MOSFET (Metal Oxide) 64A N-Channel 4V @ 25μA 64A Tc 55V
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FMD21-05QC FMD21-05QC IXYS 0.0000
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IXFT96N20P IXFT96N20P IXYS 9.0122
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0.00000000 download 26 Weeks Surface Mount Tube 2006 PolarHT™ HiPerFET™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-268-3, D3Pak (2 Leads + Tab), TO-268AA unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 DRAIN Single 600W 600W Tc 96A SWITCHING 0.024Ohm 75 ns SILICON N-Channel 24m Ω @ 500mA, 10V 5V @ 4mA 4800pF @ 25V 145nC @ 10V 30ns 30 ns 20V 200V 96A Tc 225A 1500 mJ 10V ±20V
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0.00000000 Obsolete 1 (Unlimited)
IXFD80N10Q-8XQ IXFD80N10Q-8XQ IXYS 0.0000
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0.00000000 Bulk HiPerFET™ Obsolete 1 (Unlimited) Die 150°C TJ MOSFET (Metal Oxide) N-Channel 100V
IXTP6N100D2 IXTP6N100D2 IXYS 6.8973
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0.00000000 download 24 Weeks Through Hole Tube 2009 yes Active 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 300W Tc 6A SWITCHING SILICON N-Channel 2.2 Ω @ 3A, 0V 2650pF @ 25V 95nC @ 5V Depletion Mode 6A Tc 1000V ±20V
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0.00000000 24 Weeks Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 125W Tc N-Channel 1.5 Ω @ 1.5A, 0V 4.5V @ 250μA 1070pF @ 25V 40nC @ 5V Depletion Mode 3A Tj 500V 0V ±20V
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0.00000000 download 19 Weeks Tube HiPerFET™ Active Not Applicable TO-264-3, TO-264AA compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 1250W Tc N-Channel 3m Ω @ 200A, 10V 4.5V @ 8mA 23.7nF @ 25V 365nC @ 10V 400A Tc 150V 10V ±20V
IXFK30N110P IXFK30N110P IXYS 0.0000
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0.00000000 download Through Hole Tube 2011 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-264-3, TO-264AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 DRAIN Single 960W 960W Tc 30A SWITCHING 0.36Ohm 83 ns SILICON N-Channel 360m Ω @ 15A, 10V 6.5V @ 1mA 13600pF @ 25V 235nC @ 10V 48ns 52 ns 30V 1.1kV 30A Tc 1100V 75A 1500 mJ 10V ±30V
DMA50I1200HA DMA50I1200HA IXYS 0.0000
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0.00000000 20 Weeks Tube Active EAR99 TO-247-2 Through Hole Standard Standard Recovery >500ns, > 200mA (Io) 40μA @ 1200V 1.3V @ 50A -55°C~175°C 1200V 50A 19pF @ 400V 1MHz
IXTQ182N055T IXTQ182N055T IXYS 15.9400
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0.00000000 download Through Hole Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED TO-3P-3, SC-65-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 360W 360W Tc 182A SWITCHING 0.005Ohm 53 ns SILICON N-Channel 5m Ω @ 25A, 10V 4V @ 250μA 4850pF @ 25V 114nC @ 10V 35ns 38 ns 55V 182A Tc 490A 1000 mJ 10V ±20V
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0.00000000 download Through Hole Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED, UL RECOGNIZED ISOPLUS220™ Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 ISOLATED Single 150W 150W Tc 130A SWITCHING 0.0044Ohm 53 ns SILICON N-Channel 4.4m Ω @ 25A, 10V 4V @ 250μA 7200pF @ 25V 158nC @ 10V 62ns 53 ns 55V 130A Tc 600A 500 mJ 10V ±20V
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0.00000000 download 30 Weeks Through Hole Tube 2006 HiPerFET™, PolarHT™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 30A 3 AVALANCHE RATED, UL RECOGNIZED ISOPLUS247™ Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 ISOLATED Single 166W 166W Tc 15A SWITCHING 0.25Ohm 75 ns SILICON N-Channel 250m Ω @ 15A, 10V 5V @ 4mA 3820pF @ 25V 85nC @ 10V 20ns 25 ns 30V 600V 15A Tc 80A 1500 mJ 10V ±30V
DSS10-0045A DSS10-0045A IXYS 0.0000
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0.00000000 download Through Hole Tube 2006 yes Active 1 (Unlimited) 2 EAR99 175°C -55°C ROHS3 Compliant 2 FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE TO-220-2 Through Hole 2.299997g 8541.10.00.80 NOT SPECIFIED NOT SPECIFIED 3 Rectifier Diodes Not Qualified SILICON 1 Schottky POWER 1 10A 680mV CATHODE Single Fast Recovery =< 500ns, > 200mA (Io) 300μA @ 45V 680mV @ 10A -55°C~175°C 45V 10A 300μA 45V 140A 140A 90W
IXTH1N100 IXTH1N100 IXYS 0.0000
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0.00000000 download 53 Weeks Through Hole Tube 2002 yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-247AD DRAIN Single 60W 60W Tc 1.5A SWITCHING 20 ns SILICON N-Channel 11 Ω @ 1A, 10V 4.5V @ 25μA 480pF @ 25V 23nC @ 10V 19ns 18 ns 20V 1kV 1.5A Tc 1000V 6A 200 mJ 10V ±20V
IXFX62N25 IXFX62N25 IXYS 0.0000
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0.00000000 download Through Hole Tube 2002 HiPerFET™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 390W 390W Tc 62A SWITCHING 115 ns SILICON N-Channel 35m Ω @ 31A, 10V 4V @ 4mA 6600pF @ 25V 240nC @ 10V 25ns 15 ns 20V 250V 62A Tc 248A 1500 mJ 10V ±20V
IXFK150N15 IXFK150N15 IXYS 0.0000
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0.00000000 download Through Hole Tube 2000 HiPerFET™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED TO-264-3, TO-264AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 560W 560W Tc 150A SWITCHING 0.0125Ohm 110 ns SILICON N-Channel 12.5m Ω @ 75A, 10V 4V @ 8mA 9100pF @ 25V 360nC @ 10V 60ns 45 ns 20V 150V 150A Tc 600A 10V ±20V
IXFE48N50QD3 IXFE48N50QD3 IXYS 0.0000
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0.00000000 download Chassis Mount Tube 2004 HiPerFET™ yes Active 1 (Unlimited) 4 ROHS3 Compliant 4 AVALANCHE RATED SOT-227-4, miniBLOC Chassis Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power Not Qualified 1 ISOLATED Single 400W 400W Tc 41A SWITCHING 0.11Ohm 75 ns SILICON N-Channel 110m Ω @ 24A, 10V 4V @ 4mA 8000pF @ 25V 190nC @ 10V 22ns 10 ns 20V 500V 41A Tc 192A 2500 mJ 10V ±20V
IXTQ30N50L IXTQ30N50L IXYS 0.0000
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0.00000000 download 24 Weeks Through Hole Tube 2007 yes Active 1 (Unlimited) 3 ROHS3 Compliant TO-3P-3, SC-65-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR DRAIN 400W Tc 30A SWITCHING 0.2Ohm 500V SILICON N-Channel 200m Ω @ 15A, 10V 4.5V @ 250μA 10200pF @ 25V 240nC @ 10V 30A Tc 500V 60A 1500 mJ 10V ±20V
N2418ZD360 N2418ZD360 IXYS 0.0000
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0.00000000 8 Weeks Active 1 (Unlimited) ROHS3 Compliant TO-200AF Chassis Mount 3.6kV 30000A @ 50Hz Standard Recovery 2418A
  • IXFX32N80P
    IXFX32N80P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 270m Ω @ 16A, 10V ±30V 8800pF @ 25V 150nC @ 10V TO-247-3

    Price: 1.3157

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  • IXFK80N60P3
    IXFK80N60P3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 70m Ω @ 500mA, 10V ±30V 13100pF @ 25V 190nC @ 10V TO-264-3, TO-264AA

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  • IXFB52N90P
    IXFB52N90P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 160m Ω @ 26A, 10V ±30V 19000pF @ 25V 308nC @ 10V TO-264-3, TO-264AA

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  • IXFA24N60X
    IXFA24N60X IXYS

    MOSFET (Metal Oxide) N-Channel Tube 175m Ω @ 12A, 10V ±30V 1910pF @ 25V 47nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • IXTQ62N25T
    IXTQ62N25T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 250V TO-3P-3, SC-65-3

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  • IXFA3N80
    IXFA3N80 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 3.6 Ω @ 500mA, 10V ±20V 685pF @ 25V 24nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • IXFR180N07
    IXFR180N07 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 6m Ω @ 500mA, 10V ±20V 9400pF @ 25V 420nC @ 10V ISOPLUS247™

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  • IXTH2N170D2
    IXTH2N170D2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 6.5 Ω @ 1A, 0V ±20V 3650pF @ 10V 110nC @ 5V 1700V TO-247-3

    Price: 16.9615

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  • IXTU64N055T
    IXTU64N055T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 55V TO-251-3 Short Leads, IPak, TO-251AA

    Price: 0.0000

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  • IXTA3N120
    IXTA3N120 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 4.5Ohm @ 1.5A, 10V ±20V 1350pF @ 25V 42nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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  • IXTA160N075T
    IXTA160N075T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 6m Ω @ 25A, 10V ±20V 4950pF @ 25V 112nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • FMD21-05QC
    FMD21-05QC IXYS

    MOSFET (Metal Oxide) N-Channel Tube 220m Ω @ 15A, 10V ±20V 95nC @ 10V i4-Pac™-5

    Price: 0.0000

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  • IXFT96N20P
    IXFT96N20P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 24m Ω @ 500mA, 10V ±20V 4800pF @ 25V 145nC @ 10V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 9.0122

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  • IXFK80N10Q
    IXFK80N10Q IXYS

    Price: 0.0000

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  • IXFD80N10Q-8XQ
    IXFD80N10Q-8XQ IXYS

    MOSFET (Metal Oxide) N-Channel Bulk 100V Die

    Price: 0.0000

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  • IXTP6N100D2
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    MOSFET (Metal Oxide) N-Channel Tube 2.2 Ω @ 3A, 0V ±20V 2650pF @ 25V 95nC @ 5V 1000V TO-220-3

    Price: 6.8973

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  • IXTA3N50D2-TRL
    IXTA3N50D2-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 1.5 Ω @ 1.5A, 0V ±20V 1070pF @ 25V 40nC @ 5V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • IXFK400N15X3
    IXFK400N15X3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 3m Ω @ 200A, 10V ±20V 23.7nF @ 25V 365nC @ 10V 150V TO-264-3, TO-264AA

    Price: 0.0000

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  • IXFK30N110P
    IXFK30N110P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 360m Ω @ 15A, 10V ±30V 13600pF @ 25V 235nC @ 10V 1100V TO-264-3, TO-264AA

    Price: 0.0000

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  • DMA50I1200HA
    DMA50I1200HA IXYS

    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.3V @ 50A -55°C~175°C 40μA @ 1200V Tube TO-247-2 Through Hole

    Price: 0.0000

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  • IXTQ182N055T
    IXTQ182N055T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 5m Ω @ 25A, 10V ±20V 4850pF @ 25V 114nC @ 10V TO-3P-3, SC-65-3

    Price: 15.9400

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  • IXTC220N055T
    IXTC220N055T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 4.4m Ω @ 25A, 10V ±20V 7200pF @ 25V 158nC @ 10V ISOPLUS220™

    Price: 0.0000

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  • IXFR30N60P
    IXFR30N60P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 250m Ω @ 15A, 10V ±30V 3820pF @ 25V 85nC @ 10V ISOPLUS247™

    Price: 0.0000

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  • DSS10-0045A
    DSS10-0045A IXYS

    Schottky Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 680mV @ 10A -55°C~175°C 300μA @ 45V 2-Termination Tube TO-220-2 Through Hole

    Price: 0.0000

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  • IXTH1N100
    IXTH1N100 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 11 Ω @ 1A, 10V ±20V 480pF @ 25V 23nC @ 10V 1000V TO-247-3

    Price: 0.0000

    RFQ
  • IXFX62N25
    IXFX62N25 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 35m Ω @ 31A, 10V ±20V 6600pF @ 25V 240nC @ 10V TO-247-3

    Price: 0.0000

    RFQ
  • IXFK150N15
    IXFK150N15 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 12.5m Ω @ 75A, 10V ±20V 9100pF @ 25V 360nC @ 10V TO-264-3, TO-264AA

    Price: 0.0000

    RFQ
  • IXFE48N50QD3
    IXFE48N50QD3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 110m Ω @ 24A, 10V ±20V 8000pF @ 25V 190nC @ 10V SOT-227-4, miniBLOC

    Price: 0.0000

    RFQ
  • IXTQ30N50L
    IXTQ30N50L IXYS

    MOSFET (Metal Oxide) N-Channel Tube 200m Ω @ 15A, 10V ±20V 10200pF @ 25V 240nC @ 10V 500V TO-3P-3, SC-65-3

    Price: 0.0000

    RFQ
  • N2418ZD360
    N2418ZD360 IXYS

    Standard Recovery TO-200AF Chassis Mount

    Price: 0.0000

    RFQ
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