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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Polarity Forward Current Forward Voltage Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Reverse Voltage Recovery Time Forward Voltage-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Power Dissipation Ambient-Max Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Collector Emitter Saturation Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type Gate-Emitter Voltage-Max Voltage - Collector Emitter Breakdown (Max) Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy
IXTA200N085T7 IXTA200N085T7 IXYS 0.0000
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0.00000000 download Surface Mount Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 6 EAR99 RoHS Compliant Lead Free TO-263-7, D2Pak (6 Leads + Tab), TO-263CB 5MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G6 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 480W 480W Tc 200A SWITCHING 65 ns SILICON N-Channel 5m Ω @ 25A, 10V 4V @ 250μA 7600pF @ 25V 152nC @ 10V 80ns 64 ns 85V 200A Tc 540A 1 mJ 10V ±20V
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0.00000000 download 28 Weeks Through Hole Tube 2006 HiPerFRED™ yes Active 1 (Unlimited) 2 EAR99 175°C -55°C ROHS3 Compliant 2 FREEWHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE TO-220-2 No SVHC Through Hole 2.299997g 8541.10.00.80 NOT SPECIFIED NOT SPECIFIED 3 Rectifier Diodes Not Qualified SILICON 1 Standard FAST SOFT RECOVERY 1 10A 980mV CATHODE 100A Single 1μA Fast Recovery =< 500ns, > 200mA (Io) 1μA @ 200V 1.27V @ 10A -55°C~175°C 200V 10A 200V 100A 35 ns 35 ns
IXFR26N100P IXFR26N100P IXYS 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2008 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 UL RECOGNIZED, AVALANCHE RATED ISOPLUS247™ Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 ISOLATED Single 290W 290W Tc 15A SWITCHING 72 ns SILICON N-Channel 430m Ω @ 13A, 10V 6.5V @ 1mA 11900pF @ 25V 197nC @ 10V 45ns 50 ns 30V 1kV 15A Tc 1000V 65A 1000 mJ 10V ±30V
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0.00000000 download 15 Weeks Active 1 (Unlimited) ROHS3 Compliant TO-264-3, TO-264AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1500W Tc N-Channel 3.1m Ω @ 100A, 10V 4.5V @ 1mA 14500pF @ 25V 430nC @ 10V 400A Tc 150V 10V ±20V
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0.00000000 24 Weeks Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 125W Tc N-Channel 1.5 Ω @ 1.5A, 0V 4.5V @ 250μA 1070pF @ 25V 40nC @ 5V Depletion Mode 3A Tj 500V 0V ±20V
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0.00000000 24 Weeks Active TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 42W Tc N-Channel 20 Ω @ 400mA, 10V 4V @ 50μA 240pF @ 25V 11.3nC @ 10V 800mA Tc 1000V 10V ±20V
IXFP7N80P IXFP7N80P IXYS 4.2861
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0.00000000 download 26 Weeks Through Hole Tube 2006 HiPerFET™, PolarHT™ yes Active 1 (Unlimited) 3 10.66mm ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-220-3 9.15mm 4.83mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Pure Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 200W 28 ns 200W Tc 7A SWITCHING 55 ns SILICON N-Channel 1.44 Ω @ 3.5A, 10V 5V @ 1mA 1890pF @ 25V 32nC @ 10V 32ns 24 ns 30V 800V 7A 7A Tc 18A 10V ±30V
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0.00000000 download Through Hole Tube 2006 HiPerFET™, PolarHT™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant 3 AVALANCHE RATED ISOPLUS220™ Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 ISOLATED Single 150W 150W Tc 9A SWITCHING 0.65Ohm 75 ns SILICON N-Channel 650m Ω @ 8A, 10V 5V @ 4mA 4600pF @ 25V 71nC @ 10V 32ns 29 ns 30V 800V 9A 9A Tc 48A 1500 mJ 10V ±30V
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0.00000000 download 8 Weeks Surface Mount Tube 2006 PolarHV™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant Lead Free 6A AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ 500V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 DRAIN Single 100W 100W Tc 6A SWITCHING 65 ns SILICON N-Channel 1.1 Ω @ 3A, 10V 5V @ 50μA 740pF @ 25V 14.6nC @ 10V 28ns 26 ns 30V 500V 6A 6A Tc 15A 250 mJ 10V ±30V
DLA20IM800PC DLA20IM800PC IXYS 0.0000
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0.00000000 download Surface Mount yes 2 EAR99 175°C -55°C RoHS Compliant LOW LEAKAGE CURRENT TO-263-3 unknown 8541.10.00.80 e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 Rectifier Diodes Not Qualified SILICON 1 RECTIFIER DIODE GENERAL PURPOSE 1 TO-263AB 200A CATHODE 220A Common Anode 800V 20A 10μA 83W 800V 1.24V
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0.00000000 download Chassis Mount, Screw Bulk 2002 yes Active 1 (Unlimited) 3 EAR99 180°C -40°C ROHS3 Compliant 3 Module Chassis Mount 8541.10.00.80 UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED HTZ150 3 Not Qualified SILICON 2 Standard 3A HIGH VOLTAGE 1 6V Standard Recovery >500ns, > 200mA (Io) 500μA @ 6000V 6V @ 2A 6kV 3A 100A 1 Pair Series Connection 6000V 6kV
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0.00000000 download Chassis Mount, Screw Bulk 2002 yes Active 1 (Unlimited) 3 EAR99 180°C -40°C ROHS3 Compliant 3 Module Chassis Mount 8541.10.00.80 UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED HTZ250 3 Not Qualified SILICON 2 Standard HIGH VOLTAGE 1 32V Standard Recovery >500ns, > 200mA (Io) 500μA @ 44800V 32V @ 12A 44.8kV 2.7A 200A 1 Pair Series Connection 44800V 44.8kV
IXTH32P20T IXTH32P20T IXYS 38.4858
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0.00000000 download 28 Weeks Through Hole Tube 2010 TrenchP™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 3 R-PSFM-T3 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AD DRAIN 300W Tc 32A SWITCHING 0.13Ohm 200V SILICON P-Channel 130m Ω @ 16A, 10V 4V @ 250μA 14500pF @ 25V 185nC @ 10V 32A Tc 200V 96A 1000 mJ 10V ±15V
IXTM1630 IXTM1630 IXYS 0.0000
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0.00000000 Obsolete 1 (Unlimited) ROHS3 Compliant
IXTA12N50P IXTA12N50P IXYS 3.3972
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0.00000000 download 28 Weeks Surface Mount Tube 2008 Polar™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free 12A 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ 500V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 200W 200W Tc 12A SWITCHING 0.5Ohm 55 ns SILICON N-Channel 500m Ω @ 6A, 10V 5.5V @ 250μA 1830pF @ 25V 29nC @ 10V 27ns 20 ns 30V 500V 12A Tc 600 mJ 10V ±30V
M0659LC450 M0659LC450 IXYS 0.0000
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0.00000000 8 Weeks Bulk Active 1 (Unlimited) ROHS3 Compliant DO-200AB, B-PUK Chassis Mount Standard W4 Standard Recovery >500ns, > 200mA (Io) 100mA @ 4500V 3V @ 1400A -40°C~125°C 4500V 659A 4.2μs
IXTH64N65X IXTH64N65X IXYS 13.1549
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0.00000000 download 15 Weeks Through Hole Tube 2015 Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 890W Tc 64A N-Channel 51m Ω @ 32A, 10V 5V @ 250μA 5500pF @ 25V 143nC @ 10V 64A Tc 650V 10V ±30V
IXTA130N065T2 IXTA130N065T2 IXYS 0.0000
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0.00000000 download 24 Weeks Surface Mount Tube 2008 TrenchT2™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 250W Tc 130A SWITCHING 0.0066Ohm 65V SILICON N-Channel 6.6m Ω @ 50A, 10V 4V @ 250μA 4800pF @ 25V 79nC @ 10V 130A Tc 65V 330A 600 mJ 10V ±20V
DMA30IM1600PZ-TRL DMA30IM1600PZ-TRL IXYS 0.0000
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0.00000000 20 Weeks Tape & Reel (TR) Active 2 LOW LEAKAGE CURRENT, PD-CASE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount SINGLE GULL WING YES R-PSSO-G2 150°C IEC-60747 SILICON 1 SINGLE Standard 30A GENERAL PURPOSE 1 1600V 275A CATHODE Standard Recovery >500ns, > 200mA (Io) 40μA @ 1600V 1.29V @ 30A -55°C~175°C 1600V 30A 40μA 210W 10pF @ 400V 1MHz
IXFN27N80 IXFN27N80 IXYS 5.1190
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0.00000000 download 8 Weeks Chassis Mount Tube 2003 HiPerFET™ yes Not For New Designs Not Applicable 4 ROHS3 Compliant Lead Free 27A 4 AVALANCHE RATED SOT-227-4, miniBLOC 300mOhm Chassis Mount -55°C~150°C TJ 800V MOSFET (Metal Oxide) ENHANCEMENT MODE Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 520W 520W Tc 250 ns 27A SWITCHING 75 ns SILICON N-Channel 300m Ω @ 13.5A, 10V 4.5V @ 8mA 9740pF @ 25V 400nC @ 10V 80ns 40 ns 20V 800V 27A Tc 108A 10V 15V ±20V
DSA2-12A DSA2-12A IXYS 0.0000
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0.00000000 download 16 Weeks Through Hole Bulk 2000 yes Obsolete 1 (Unlimited) 2 EAR99 180°C -40°C ROHS3 Compliant Lead Free No 2 Axial No SVHC Through Hole 8541.10.00.80 WIRE Rectifier Diodes SILICON 1 Avalanche GENERAL PURPOSE 1 Standard 1.25V ISOLATED 120A Single 2mA Standard Recovery >500ns, > 200mA (Io) 2mA @ 1200V 1.25V @ 7A -40°C~180°C 1.2kV 3.6A 127A 1200V
IXTP220N075T IXTP220N075T IXYS 0.0000
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0.00000000 download Through Hole Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 TO-220AB DRAIN Single 480W 480W Tc 220A SWITCHING 0.0085Ohm 55 ns SILICON N-Channel 4.5m Ω @ 25A, 10V 4V @ 250μA 7700pF @ 25V 165nC @ 10V 65ns 47 ns 75V 130A 220A Tc 350A 750 mJ 10V ±20V
IXGK50N90B2D1 IXGK50N90B2D1 IXYS 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2006 HiPerFAST™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 TO-264-3, TO-264AA Through Hole 10.000011g -55°C~150°C TJ Standard e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED IXG*50N90 3 Not Qualified 400W 400W 1 COLLECTOR N-CHANNEL Single 200 ns 75A 900V 900V POWER CONTROL SILICON 48 ns 2.7V @ 15V, 50A 820 ns PT 720V, 50A, 5 Ω, 15V 135nC 200A 20ns/350ns 4.7mJ (off)
IXGF32N170 IXGF32N170 IXYS 48.0606
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0.00000000 download 28 Weeks Through Hole Tube 2008 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 i4-Pac™-5 (3 Leads) No SVHC Through Hole -55°C~150°C TJ Standard e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED IXG*32N170 3 Insulated Gate BIP Transistors Not Qualified 200W 1 NPN ISOLATED Single 200W 44A 1.7kV 1.7kV POWER CONTROL SILICON 2.7V 90 ns 3.5V @ 15V, 32A 920 ns NPT 20V 1700V 5V 500ns 1020V, 32A, 2.7 Ω, 15V 146nC 200A 45ns/270ns 10.6mJ (off)
IXTK128N15 IXTK128N15 IXYS 0.0000
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0.00000000 download Through Hole Tube 2003 MegaMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-264-3, TO-264AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 540W 540W Tc 128A SWITCHING 0.015Ohm 115 ns SILICON N-Channel 15m Ω @ 500mA, 10V 4V @ 250μA 6000pF @ 25V 240nC @ 10V 30ns 17 ns 20V 150V 128A Tc 512A 2500 mJ 10V ±20V
MKE38RK600DFEL-TRR MKE38RK600DFEL-TRR IXYS 0.0000
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0.00000000 download Tape & Reel (TR) CoolMOS™ Active 1 (Unlimited) ROHS3 Compliant 9-SMD Module Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) N-Channel 45m Ω @ 44A, 10V 3.5V @ 3mA 6800pF @ 100V 190nC @ 10V 50A Tc 600V 10V ±20V
IXFK140N25T IXFK140N25T IXYS 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2009 GigaMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free AVALANCHE RATED TO-264-3, TO-264AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 960W Tc 140A SWITCHING 0.017Ohm 250V SILICON N-Channel 17m Ω @ 60A, 10V 5V @ 4mA 19000pF @ 25V 255nC @ 10V 140A Tc 250V 380A 3000 mJ 10V ±20V
IXFH12N90 IXFH12N90 IXYS 1.0146
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0.00000000 download Through Hole Tube 2003 HiPerFET™ yes Active 3 ROHS3 Compliant Lead Free 12A No 3 AVALANCHE RATED TO-247-3 900mOhm Through Hole -55°C~150°C TJ 900V MOSFET (Metal Oxide) ENHANCEMENT MODE 3 FET General Purpose Power 1 TO-247AD DRAIN Single 300W 300W Tc 12A SWITCHING 51 ns SILICON N-Channel 900m Ω @ 6A, 10V 4.5V @ 4mA 4200pF @ 25V 155nC @ 10V 12ns 18 ns 20V 900V 12A Tc 48A 10V ±20V
MCB60I1200TZ-TUB MCB60I1200TZ-TUB IXYS 0.0000
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0.00000000 20 Weeks Active TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Surface Mount -40°C~175°C TJ SiCFET (Silicon Carbide) N-Channel 34m Ω @ 50A, 20V 4V @ 15mA 2790pF @ 1000V 160nC @ 20V 90A Tc 1.2kV 20V +20V, -5V
IXTM15N60 IXTM15N60 IXYS 0.0000
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0.00000000 Obsolete 1 (Unlimited) 2 ROHS3 Compliant ENHANCEMENT MODE BOTTOM PIN/PEG NO O-MBFM-P2 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-204AE DRAIN N-CHANNEL 250W SWITCHING 0.5Ohm 600V METAL-OXIDE SEMICONDUCTOR SILICON 15A 300W
  • IXTA200N085T7
    IXTA200N085T7 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 5m Ω @ 25A, 10V ±20V 7600pF @ 25V 152nC @ 10V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

    Price: 0.0000

    RFQ
  • DPG10I200PA
    DPG10I200PA IXYS

    Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 1.27V @ 10A -55°C~175°C 1μA @ 200V 2-Termination Tube TO-220-2 Through Hole

    Price: 1.6175

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  • IXFR26N100P
    IXFR26N100P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 430m Ω @ 13A, 10V ±30V 11900pF @ 25V 197nC @ 10V 1000V ISOPLUS247™

    Price: 0.0000

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  • IXTK400N15X4
    IXTK400N15X4 IXYS

    MOSFET (Metal Oxide) N-Channel 3.1m Ω @ 100A, 10V ±20V 14500pF @ 25V 430nC @ 10V 150V TO-264-3, TO-264AA

    Price: 0.0000

    RFQ
  • IXTA3N50D2-TRL
    IXTA3N50D2-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 1.5 Ω @ 1.5A, 0V ±20V 1070pF @ 25V 40nC @ 5V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

    RFQ
  • IXTY08N100P-TRL
    IXTY08N100P-TRL IXYS

    MOSFET (Metal Oxide) N-Channel 20 Ω @ 400mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63

    Price: 0.0000

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  • IXFP7N80P
    IXFP7N80P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 1.44 Ω @ 3.5A, 10V ±30V 1890pF @ 25V 32nC @ 10V TO-220-3

    Price: 4.2861

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  • IXFC16N80P
    IXFC16N80P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 650m Ω @ 8A, 10V ±30V 4600pF @ 25V 71nC @ 10V ISOPLUS220™

    Price: 0.0000

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  • IXTA6N50P
    IXTA6N50P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 1.1 Ω @ 3A, 10V ±30V 740pF @ 25V 14.6nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • DLA20IM800PC
    DLA20IM800PC IXYS

    RECTIFIER DIODE Diode Rectifier 2-Termination TO-263-3

    Price: 0.0000

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  • HTZ150C6K
    HTZ150C6K IXYS

    Standard Rectifier Diode 1 Pair Series Connection Standard Recovery >500ns, > 200mA (Io) 3A 6kV-DC 2-Element Module Chassis Mount

    Price: 0.0000

    RFQ
  • HTZ250G44K
    HTZ250G44K IXYS

    Standard Rectifier Diode 1 Pair Series Connection Standard Recovery >500ns, > 200mA (Io) 2.7A 44.8kV-DC 2-Element Module Chassis Mount

    Price: 0.0000

    RFQ
  • IXTH32P20T
    IXTH32P20T IXYS

    MOSFET (Metal Oxide) P-Channel Tube 130m Ω @ 16A, 10V ±15V 14500pF @ 25V 185nC @ 10V 200V TO-247-3

    Price: 38.4858

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  • IXTM1630
    IXTM1630 IXYS

    Price: 0.0000

    RFQ
  • IXTA12N50P
    IXTA12N50P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 500m Ω @ 6A, 10V ±30V 1830pF @ 25V 29nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 3.3972

    RFQ
  • M0659LC450
    M0659LC450 IXYS

    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 3V @ 1400A -40°C~125°C 100mA @ 4500V Bulk DO-200AB, B-PUK Chassis Mount

    Price: 0.0000

    RFQ
  • IXTH64N65X
    IXTH64N65X IXYS

    MOSFET (Metal Oxide) N-Channel Tube 51m Ω @ 32A, 10V ±30V 5500pF @ 25V 143nC @ 10V 650V TO-247-3

    Price: 13.1549

    RFQ
  • IXTA130N065T2
    IXTA130N065T2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 6.6m Ω @ 50A, 10V ±20V 4800pF @ 25V 79nC @ 10V 65V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

    RFQ
  • DMA30IM1600PZ-TRL
    DMA30IM1600PZ-TRL IXYS

    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.29V @ 30A -55°C~175°C 40μA @ 1600V 2-Termination Tape & Reel (TR) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount

    Price: 0.0000

    RFQ
  • IXFN27N80
    IXFN27N80 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 300m Ω @ 13.5A, 10V ±20V 9740pF @ 25V 400nC @ 10V SOT-227-4, miniBLOC

    Price: 5.1190

    RFQ
  • DSA2-12A
    DSA2-12A IXYS

    Avalanche Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.25V @ 7A -40°C~180°C 2mA @ 1200V 2-Termination Bulk Axial Through Hole

    Price: 0.0000

    RFQ
  • IXTP220N075T
    IXTP220N075T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 4.5m Ω @ 25A, 10V ±20V 7700pF @ 25V 165nC @ 10V TO-220-3

    Price: 0.0000

    RFQ
  • IXGK50N90B2D1
    IXGK50N90B2D1 IXYS

    IXGK50N90B2D1 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at Utmel

    Price: 0.0000

    RFQ
  • IXGF32N170
    IXGF32N170 IXYS

    IXGF32N170 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at Utmel

    Price: 48.0606

    RFQ
  • IXTK128N15
    IXTK128N15 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 15m Ω @ 500mA, 10V ±20V 6000pF @ 25V 240nC @ 10V TO-264-3, TO-264AA

    Price: 0.0000

    RFQ
  • MKE38RK600DFEL-TRR
    MKE38RK600DFEL-TRR IXYS

    MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 45m Ω @ 44A, 10V ±20V 6800pF @ 100V 190nC @ 10V 600V 9-SMD Module

    Price: 0.0000

    RFQ
  • IXFK140N25T
    IXFK140N25T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 17m Ω @ 60A, 10V ±20V 19000pF @ 25V 255nC @ 10V 250V TO-264-3, TO-264AA

    Price: 0.0000

    RFQ
  • IXFH12N90
    IXFH12N90 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 900m Ω @ 6A, 10V ±20V 4200pF @ 25V 155nC @ 10V TO-247-3

    Price: 1.0146

    RFQ
  • MCB60I1200TZ-TUB
    MCB60I1200TZ-TUB IXYS

    SiCFET (Silicon Carbide) N-Channel 34m Ω @ 50A, 20V +20V, -5V 2790pF @ 1000V 160nC @ 20V 1.2kV TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 0.0000

    RFQ
  • IXTM15N60
    IXTM15N60 IXYS

    Price: 0.0000

    RFQ
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