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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Additional Feature Package / Case Reach Compliance Code Mounting Type Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type JEDEC-95 Code Polarity Tolerance Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Supplier Device Package Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Reverse Current-Max Power Dissipation-Max Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Source Url Status Check Date Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Reference Voltage Voltage Tol-Max Working Test Current Dynamic Impedance-Max Impedance-Max Voltage - Zener (Nom) (Vz) Voltage Temp Coeff-Max DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
BUK9Y11-30B/C1,115 BUK9Y11-30B/C1,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant
IRFZ44N,127 IRFZ44N,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1999 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant ESD PROTECTED TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE 260 30 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 110W Tc SWITCHING 0.022Ohm 55V SILICON N-Channel 22m Ω @ 25A, 10V 4V @ 1mA 1800pF @ 25V 62nC @ 10V 49A 49A Tc 55V 160A 110 mJ 10V ±20V
BUK956R1-100E,127 BUK956R1-100E,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 3 NO FET General Purpose Power Single 349W Tc N-Channel 5.9m Ω @ 25A, 10V 2.1V @ 1mA 17460pF @ 25V 133nC @ 5V 120A 120A Tc 100V 5V 10V ±10V
NOCATSTYPE NOCATSTYPE NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant
BUK9515-60E,127 BUK9515-60E,127 NXP USA Inc. 0.0000
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0.00000000 Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 3 NO FET General Purpose Power Single 96W Tc N-Channel 13m Ω @ 15A, 10V 2.1V @ 1mA 2651pF @ 25V 20.5nC @ 5V 54A 54A Tc 60V 5V 10V ±10V
PHB174NQ04LT,118 PHB174NQ04LT,118 NXP USA Inc. 10.4165
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0.00000000 download Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) D2PAK 250W Tc N-Channel 4mOhm @ 25A, 10V 2V @ 1mA 5345pF @ 25V 64nC @ 5V 75A Tc 40V 4.5V 10V ±15V
PHP225NQ04T,127 PHP225NQ04T,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1997 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 300W Tc SWITCHING 0.0031Ohm 40V SILICON N-Channel 3.1m Ω @ 25A, 10V 4V @ 1mA 5100pF @ 25V 94nC @ 10V 75A 75A Tc 40V 240A 560 mJ 10V ±20V
PHP101NQ03LT,127 PHP101NQ03LT,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2009 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 166W Tc SWITCHING 0.0075Ohm 30V SILICON N-Channel 5.5m Ω @ 25A, 10V 2.5V @ 1mA 2180pF @ 25V 23nC @ 5V 75A 75A Tc 30V 240A 185 mJ 5V 10V ±20V
BZX284-C22,115 BZX284-C22,115 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant SOD-110 Surface Mount -65°C~150°C ZENER 8541.10.00.50 e2 TIN COPPER DUAL WRAP AROUND NOT SPECIFIED NOT SPECIFIED 2 YES R-CDSO-R2 Voltage Reference Diodes Not Qualified 400mW SILICON 1 SINGLE ZENER DIODE UNIDIRECTIONAL ±5% 50nA @ 15.4V 1.1V @ 100mA 0.4W 22V 5% 5mA 25Ohm 25Ohm 22V
BUK9611-55A,118 BUK9611-55A,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) SINGLE GULL WING 260 40 3 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 166W Tc SWITCHING 0.012Ohm 55V SILICON N-Channel 10m Ω @ 25A, 10V 2V @ 1mA 4230pF @ 25V 75A 75A Tc 55V 266A 330 mJ 4.5V 10V ±10V
PHB176NQ04T,118 PHB176NQ04T,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2009 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 250W Tc N-Channel 4.3m Ω @ 25A, 10V 4V @ 1mA 3620pF @ 25V 68.9nC @ 10V 75A Tc 40V 10V ±20V
PMN49EN,165 PMN49EN,165 NXP USA Inc. 0.6601
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0.00000000 download Tape & Reel (TR) 2007 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant SC-74, SOT-457 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 6 1.75W Tc 2013-06-14 00:00:00 N-Channel 47m Ω @ 2A, 10V 2V @ 1mA 350pF @ 30V 8.8nC @ 4.5V 4.6A Tc 30V 4.5V 10V ±20V
PHP45NQ10TA,127 PHP45NQ10TA,127 NXP USA Inc. 0.0000
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0.00000000 Tube TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole MOSFET (Metal Oxide) N-Channel 25m Ω @ 25A, 10V 4V @ 1mA 2600pF @ 25V 61nC @ 10V 47A Tc 100V
PMEM4020PD,115 PMEM4020PD,115 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 6 EAR99 ROHS3 Compliant SC-74, SOT-457 Surface Mount 150°C TJ e3 Matte Tin (Sn) DUAL GULL WING 260 40 6 YES R-PDSO-G6 Other Transistors Not Qualified 600mW 1 SINGLE WITH BUILT-IN DIODE PNP 1W SWITCHING SILICON PNP + Diode (Isolated) 150MHz 100nA 40V 750mA 300 @ 100mA 5V 530mV @ 200mA, 2A 150MHz
PH8030L,115 PH8030L,115 NXP USA Inc. 2.5625
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Min: 1

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0.00000000 download Tape & Reel (TR) 2006 TrenchMOS™ Obsolete 1 (Unlimited) 4 EAR99 ROHS3 Compliant SC-100, SOT-669 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 62.5W Tc SWITCHING 0.0097Ohm 30V SILICON N-Channel 5.9m Ω @ 25A, 10V 2.15V @ 1mA 2260pF @ 12V 15.2nC @ 4.5V 76.7A 76.7A Tc 30V 300A 95 mJ 4.5V 10V ±20V
BZX284-B30,115 BZX284-B30,115 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) ROHS3 Compliant SOD-110 Surface Mount -65°C~150°C BZX284B30 400mW ±2% 50nA @ 21V 1.1V @ 100mA 40Ohm 30V
NX3008PBKT,115 NX3008PBKT,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2014 Automotive, AEC-Q101 Obsolete 1 (Unlimited) ROHS3 Compliant SC-75, SOT-416 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 3 250mW Ta 770mW Tc 2013-06-14 00:00:00 P-Channel 4.1 Ω @ 200mA, 4.5V 1.1V @ 250μA 46pF @ 15V 0.72nC @ 4.5V 200mA Ta 30V 2.5V 4.5V ±8V
PHW80NQ10T,127 PHW80NQ10T,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1999 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 263W Tc SWITCHING 0.015Ohm 100V SILICON N-Channel 15m Ω @ 25A, 10V 4V @ 1mA 4720pF @ 25V 109nC @ 10V 80A 80A Tc 100V 320A 481 mJ 10V ±20V
PHD45N03LTA,118 PHD45N03LTA,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 65W Tc SWITCHING 0.024Ohm 25V SILICON N-Channel 21m Ω @ 25A, 10V 2V @ 1mA 700pF @ 25V 19nC @ 5V 40A 40A Tc 25V 160A 40 mJ 3.5V 10V ±20V
PSMN3R2-25YLC,115 PSMN3R2-25YLC,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2011 Obsolete 1 (Unlimited) ROHS3 Compliant SC-100, SOT-669 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 4 79W Tc 2013-06-14 00:00:00 N-Channel 3.4m Ω @ 25A, 10V 1.95V @ 1mA 1781pF @ 12V 30nC @ 10V 100A Tc 25V 4.5V 10V ±20V
BUK9E6R1-100E,127 BUK9E6R1-100E,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 NO R-PSIP-T3 FET General Purpose Power AEC-Q101; IEC-60134 1 SINGLE WITH BUILT-IN DIODE DRAIN 349W Tc SWITCHING 0.0061Ohm 100V SILICON N-Channel 5.9m Ω @ 25A, 10V 2.1V @ 1mA 17460pF @ 25V 133nC @ 5V 120A 120A Tc 100V 576A 387 mJ 5V 10V ±10V
BUK954R4-80E,127 BUK954R4-80E,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 NO R-PSFM-T3 FET General Purpose Power AEC-Q101; IEC-60134 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 349W Tc SWITCHING 0.0044Ohm 80V SILICON N-Channel 4.2m Ω @ 25A, 10V 2.1V @ 1mA 17130pF @ 25V 123nC @ 5V 120A 120A Tc 80V 715A 488 mJ 5V 10V ±10V
PSMN2R9-25YLC/GFX PSMN2R9-25YLC/GFX NXP USA Inc. 0.0000
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0.00000000 Obsolete 1 (Unlimited) ROHS3 Compliant
BUK958R5-40E,127 BUK958R5-40E,127 NXP USA Inc. 0.0000
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0.00000000 Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 NO R-PSFM-T3 FET General Purpose Power AEC-Q101; IEC-60134 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 96W Tc SWITCHING 0.0081Ohm 40V SILICON N-Channel 6.6m Ω @ 20A, 10V 2.1V @ 1mA 2600pF @ 25V 20.9nC @ 5V 75A 75A Tc 40V 315A 44 mJ 5V 10V ±10V
BUK9520-55A,127 BUK9520-55A,127 NXP USA Inc. 2.0086
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0.00000000 download Tube 2010 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 118W Tc SWITCHING 0.021Ohm 55V SILICON N-Channel 18m Ω @ 25A, 10V 2V @ 1mA 2210pF @ 25V 54A 54A Tc 55V 217A 115 mJ 4.5V 10V ±10V
PHX18NQ11T,127 PHX18NQ11T,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2005 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack, Isolated Tab unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 31.2W Tc SWITCHING 0.09Ohm 110V SILICON N-Channel 90m Ω @ 9A, 10V 4V @ 1mA 635pF @ 25V 21nC @ 10V 12.5A 12.5A Tc 110V 50.2A 56 mJ 10V ±20V
PHP110NQ06LT,127 PHP110NQ06LT,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1997 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 200W Tc SWITCHING 0.0093Ohm 55V SILICON N-Channel 7m Ω @ 25A, 10V 2V @ 1mA 3960pF @ 25V 45nC @ 5V 75A 75A Tc 55V 240A 280 mJ 4.5V 10V ±15V
PHT6N06T,135 PHT6N06T,135 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) 4 EAR99 ROHS3 Compliant ESD PROTECTED TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 8.3W Tc SWITCHING 0.15Ohm 55V SILICON N-Channel 150m Ω @ 5A, 10V 4V @ 1mA 175pF @ 25V 5.6nC @ 10V 5.5A 5.5A Tc 55V 22A 15 mJ 10V ±20V
PZM18NB2,115 PZM18NB2,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -65°C~150°C ZENER 8541.10.00.50 e3 TIN DUAL GULL WING NOT SPECIFIED NOT SPECIFIED PZM18 3 YES R-PDSO-G3 Not Qualified 300mW SILICON 1 SINGLE ZENER DIODE UNIDIRECTIONAL ±2% 70nA @ 13V 1.1V @ 100mA 0.07μA 0.3W 18V 2.2% 5mA 20Ohm 18V 14.4mV/°C
PSMN009-100W,127 PSMN009-100W,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1999 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.009Ohm 100V SILICON N-Channel 9m Ω @ 25A, 10V 4V @ 1mA 9000pF @ 25V 214nC @ 10V 100A 100A Tc 100V 300A 650 mJ 10V ±20V
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