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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Additional Feature Package / Case Reach Compliance Code Mounting Type Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Power - Max Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Supplier Device Package Power Dissipation-Max Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Source Url Status Check Date Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Transistor Type Turn On Time-Max (ton) Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Turn Off Time-Max (toff) Current - Collector Cutoff (Max) VCEsat-Max Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Collector-Base Capacitance-Max
BUK7226-75A/C1,118 BUK7226-75A/C1,118 NXP USA Inc. 1.4876
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0.00000000 download Tape & Reel (TR) 2008 TrenchMOS™ Active 1 (Unlimited) ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) DPAK 158W Tc N-Channel 26mOhm @ 25A, 10V 4V @ 1mA 2385pF @ 25V 48nC @ 10V 45A Tc 75V 10V ±20V
PMPB16XN,115 PMPB16XN,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2012 Obsolete 1 (Unlimited) 6 ROHS3 Compliant 6-UDFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN DUAL NO LEAD 6 YES S-PDSO-N6 FET General Purpose Power IEC-60134 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.7W Ta 12.5W Tc SWITCHING 0.021Ohm 30V SILICON N-Channel 21m Ω @ 7.2A, 4.5V 1.5V @ 250μA 775pF @ 15V 10.8nC @ 4.5V 7.2A 7.2A Ta 30V 28A 2.5V 4.5V ±12V
BUK653R7-30C,127 BUK653R7-30C,127 NXP USA Inc. 0.0000
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0.00000000 Tube 2010 TrenchMOS™ Obsolete 1 (Unlimited) Non-RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 3 158W Tc 2013-06-14 00:00:00 N-Channel 3.9m Ω @ 25A, 10V 2.8V @ 1mA 4707pF @ 25V 78nC @ 10V 100A Tc 30V 4.5V 10V ±16V
BUK95150-55A,127 BUK95150-55A,127 NXP USA Inc. 1.7129
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0.00000000 download Tube 2000 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 53W Tc SWITCHING 0.161Ohm 55V SILICON N-Channel 137m Ω @ 13A, 10V 2V @ 1mA 339pF @ 25V 13A 13A Tc 55V 53A 25 mJ 4.5V 10V ±10V
BUK7614-55,118 BUK7614-55,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1998 TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE GULL WING 260 40 3 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 142W Tc SWITCHING 0.014Ohm 55V 2013-06-14 00:00:00 SILICON N-Channel 14m Ω @ 25A, 10V 4V @ 1mA 2900pF @ 25V 68A 68A Tc 55V 240A 200 mJ 270 pF 111ns 10V ±16V 105ns
PHP110NQ06LT,127 PHP110NQ06LT,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1997 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 200W Tc SWITCHING 0.0093Ohm 55V SILICON N-Channel 7m Ω @ 25A, 10V 2V @ 1mA 3960pF @ 25V 45nC @ 5V 75A 75A Tc 55V 240A 280 mJ 4.5V 10V ±15V
BUK7510-55AL,127 BUK7510-55AL,127 NXP USA Inc. 2.2342
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0.00000000 download Tube 2009 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 3 NO FET General Purpose Power Single 300W Tc 2013-06-14 00:00:00 N-Channel 10m Ω @ 25A, 10V 4V @ 1mA 6280pF @ 25V 124nC @ 10V 122A 75A Tc 55V 10V ±20V
BUK958R5-40E,127 BUK958R5-40E,127 NXP USA Inc. 0.0000
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0.00000000 Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 NO R-PSFM-T3 FET General Purpose Power AEC-Q101; IEC-60134 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 96W Tc SWITCHING 0.0081Ohm 40V SILICON N-Channel 6.6m Ω @ 20A, 10V 2.1V @ 1mA 2600pF @ 25V 20.9nC @ 5V 75A 75A Tc 40V 315A 44 mJ 5V 10V ±10V
BUK9Y7R8-80E,115 BUK9Y7R8-80E,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant SC-100, SOT-669 Surface Mount MOSFET (Metal Oxide) N-Channel 80V
BUK753R1-40B,127 BUK753R1-40B,127 NXP USA Inc. 0.0000
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0.00000000 Tube 2000 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 300W Tc SWITCHING 0.0031Ohm 40V SILICON N-Channel 3.1m Ω @ 25A, 10V 4V @ 1mA 6808pF @ 25V 94nC @ 10V 75A 75A Tc 40V 902A 1600 mJ 10V ±20V
PSMN014-60LS,115 PSMN014-60LS,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2010 Obsolete 1 (Unlimited) ROHS3 Compliant 8-VDFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8 YES FET General Purpose Power Single 65W Tc N-Channel 14m Ω @ 10A, 10V 4V @ 1mA 1264pF @ 30V 19.6nC @ 10V 40A 40A Tc 60V 10V ±20V
SI9410DY,518 SI9410DY,518 NXP USA Inc. 0.0593
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0.00000000 download Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 2 (1 Year) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 8 YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.03Ohm 30V SILICON N-Channel 30m Ω @ 7A, 10V 1V @ 250μA 50nC @ 10V 0.007A 30V 4.5V 10V ±20V
PHP3055E,127 PHP3055E,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2001 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant FAST SWITCHING TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 33W Tc SWITCHING 0.15Ohm 60V SILICON N-Channel 150m Ω @ 5.5A, 10V 4V @ 1mA 250pF @ 25V 5.8nC @ 10V 10.3A 10.3A Tc 60V 41A 25 mJ 80ns 10V ±20V 130ns
PMEM4030PS,115 PMEM4030PS,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2005 Obsolete 1 (Unlimited) ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount 1W PNP + Diode (Isolated) 100nA ICBO 50V 2A 200 @ 1A 2V 390mV @ 300mA, 3A 100MHz
PSMN009-100W,127 PSMN009-100W,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1999 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.009Ohm 100V SILICON N-Channel 9m Ω @ 25A, 10V 4V @ 1mA 9000pF @ 25V 214nC @ 10V 100A 100A Tc 100V 300A 650 mJ 10V ±20V
PMN38EN,165 PMN38EN,165 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2007 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant SC-74, SOT-457 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 6 1.75W Tc 2013-06-14 00:00:00 N-Channel 38m Ω @ 3A, 10V 2V @ 1mA 495pF @ 25V 6.1nC @ 4.5V 5.4A Tc 30V 4.5V 10V ±20V
BUK7614-55A,118 BUK7614-55A,118 NXP USA Inc. 0.3983
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0.00000000 download Tape & Reel (TR) 1999 Automotive, AEC-Q101, TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) SINGLE GULL WING 260 40 3 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 166W Tc SWITCHING 0.014Ohm 55V SILICON N-Channel 14m Ω @ 25A, 10V 4V @ 1mA 2464pF @ 25V 73A 73A Tc 55V 266A 125 mJ 10V ±20V
IRFZ44N,127 IRFZ44N,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1999 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant ESD PROTECTED TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE 260 30 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 110W Tc SWITCHING 0.022Ohm 55V SILICON N-Channel 22m Ω @ 25A, 10V 4V @ 1mA 1800pF @ 25V 62nC @ 10V 49A 49A Tc 55V 160A 110 mJ 10V ±20V
PSMN3R2-25YLC,115 PSMN3R2-25YLC,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2011 Obsolete 1 (Unlimited) ROHS3 Compliant SC-100, SOT-669 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 4 79W Tc 2013-06-14 00:00:00 N-Channel 3.4m Ω @ 25A, 10V 1.95V @ 1mA 1781pF @ 12V 30nC @ 10V 100A Tc 25V 4.5V 10V ±20V
BC337,126 BC337,126 NXP USA Inc. 0.0000
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0.00000000 download Tape & Box (TB) 2009 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) unknown Through Hole 150°C TJ e3 TIN BOTTOM NOT SPECIFIED NOT SPECIFIED BC337 3 NO O-PBCY-T3 Other Transistors Not Qualified 625mW 1 SINGLE NPN 0.625W SWITCHING SILICON NPN 100MHz 100nA ICBO 45V 500mA 100 @ 100mA 1V 700mV @ 50mA, 500mA 100MHz
BUK7Y7R6-40E/GFX BUK7Y7R6-40E/GFX NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant
2PC1815Y,126 2PC1815Y,126 NXP USA Inc. 0.0000
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0.00000000 download Tape & Box (TB) 1996 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) unknown Through Hole 150°C TJ 8541.21.00.95 e3 Matte Tin (Sn) BOTTOM NOT SPECIFIED NOT SPECIFIED 2PC1815 NO O-PBCY-T3 Other Transistors Not Qualified 500mW 1 SINGLE NPN 0.5W AMPLIFIER SILICON NPN 80MHz 100nA ICBO 0.3 V 50V 150mA 120 @ 2mA 6V 300mV @ 10mA, 100mA 80MHz 3.5pF
BUK7615-100A,118 BUK7615-100A,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1999 TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE GULL WING 260 40 3 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 230W Tc SWITCHING 0.015Ohm 100V SILICON N-Channel 15m Ω @ 25A, 10V 4V @ 1mA 6000pF @ 25V 75A 75A Tc 100V 240A 120 mJ 10V ±20V
PHB193NQ06T,118 PHB193NQ06T,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) D2PAK 300W Tc N-Channel 4mOhm @ 25A, 10V 4V @ 1mA 5082pF @ 25V 85.6nC @ 10V 75A Tc 55V 10V ±20V
PHW80NQ10T,127 PHW80NQ10T,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1999 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 263W Tc SWITCHING 0.015Ohm 100V SILICON N-Channel 15m Ω @ 25A, 10V 4V @ 1mA 4720pF @ 25V 109nC @ 10V 80A 80A Tc 100V 320A 481 mJ 10V ±20V
BUK7616-55A,118 BUK7616-55A,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE GULL WING 260 40 3 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 138W Tc SWITCHING 0.016Ohm 55V SILICON N-Channel 16m Ω @ 25A, 10V 4V @ 1mA 2245pF @ 25V 65.7A 65.7A Tc 55V 263A 120 mJ 10V ±20V
PHP96NQ03LT,127 PHP96NQ03LT,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2001 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 115W Tc SWITCHING 0.0075Ohm 25V SILICON N-Channel 4.95m Ω @ 25A, 10V 2V @ 1mA 2200pF @ 25V 26.7nC @ 5V 75A 75A Tc 25V 240A 185 mJ 5V 10V ±20V
PSMN7R0-40LS,115 PSMN7R0-40LS,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2010 Obsolete 1 (Unlimited) ROHS3 Compliant 8-VDFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8 YES FET General Purpose Power Single 65W Tc N-Channel 7m Ω @ 10A, 10V 4V @ 1mA 1286pF @ 12V 21.4nC @ 10V 40A 40A Tc 40V 10V ±20V
PSMN6R5-25YLC/GFX PSMN6R5-25YLC/GFX NXP USA Inc. 0.0000
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0.00000000 Obsolete 1 (Unlimited) ROHS3 Compliant
BUK9Y11-30B/C1,115 BUK9Y11-30B/C1,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant
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