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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Additional Feature Package / Case Reach Compliance Code Mounting Type Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Power - Max Reference Standard Number of Elements Configuration JEDEC-95 Code Tolerance Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Supplier Device Package Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Power Dissipation-Max Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Source Url Status Check Date Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Transistor Type Turn On Time-Max (ton) Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Turn Off Time-Max (toff) Current - Collector Cutoff (Max) VCEsat-Max Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Impedance-Max Voltage - Zener (Nom) (Vz) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Collector-Base Capacitance-Max
BUK7615-100A,118 BUK7615-100A,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1999 TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE GULL WING 260 40 3 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 230W Tc SWITCHING 0.015Ohm 100V SILICON N-Channel 15m Ω @ 25A, 10V 4V @ 1mA 6000pF @ 25V 75A 75A Tc 100V 240A 120 mJ 10V ±20V
IRFZ44N,127 IRFZ44N,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1999 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant ESD PROTECTED TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE 260 30 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 110W Tc SWITCHING 0.022Ohm 55V SILICON N-Channel 22m Ω @ 25A, 10V 4V @ 1mA 1800pF @ 25V 62nC @ 10V 49A 49A Tc 55V 160A 110 mJ 10V ±20V
PHB110NQ08LT,118 PHB110NQ08LT,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) D2PAK 230W Tc N-Channel 8.5mOhm @ 25A, 10V 2V @ 1mA 6631pF @ 25V 127.3nC @ 10V 75A Tc 75V 4.5V 10V ±20V
BUK7Y25-40B/C,115 BUK7Y25-40B/C,115 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2010 TrenchMOS™ Active 1 (Unlimited) ROHS3 Compliant SC-100, SOT-669 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 59.4W Tc N-Channel 25m Ω @ 20A, 10V 4V @ 1mA 693pF @ 25V 12.1nC @ 10V 35.3A Tc 40V 10V ±20V
BUK7616-55A,118 BUK7616-55A,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE GULL WING 260 40 3 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 138W Tc SWITCHING 0.016Ohm 55V SILICON N-Channel 16m Ω @ 25A, 10V 4V @ 1mA 2245pF @ 25V 65.7A 65.7A Tc 55V 263A 120 mJ 10V ±20V
PMV28UN,215 PMV28UN,215 NXP USA Inc. 1.3169
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0.00000000 download Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) ROHS3 Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 3 380mW Ta 2013-06-14 00:00:00 N-Channel 32m Ω @ 3.3A, 4.5V 1V @ 270μA 470pF @ 10V 9nC @ 4.5V 3.3A Ta 20V 1.8V 4.5V ±8V
BUK9237-55A/C1,118 BUK9237-55A/C1,118 NXP USA Inc. 1.4846
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0.00000000 download Tape & Reel (TR) 2010 TrenchMOS™ Active 1 (Unlimited) Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 77W Tc N-Channel 33m Ω @ 15A, 10V 2V @ 1mA 1236pF @ 25V 17.6nC @ 5V 32A Tc 55V 4.5V 10V ±15V
PHW80NQ10T,127 PHW80NQ10T,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1999 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 263W Tc SWITCHING 0.015Ohm 100V SILICON N-Channel 15m Ω @ 25A, 10V 4V @ 1mA 4720pF @ 25V 109nC @ 10V 80A 80A Tc 100V 320A 481 mJ 10V ±20V
PHP165NQ08T,127 PHP165NQ08T,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2009 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 NO FET General Purpose Power Single 250W Tc N-Channel 5m Ω @ 25A, 10V 4V @ 1mA 8250pF @ 25V 165nC @ 10V 75A 75A Tc 75V 10V ±20V
NX3008PBKT,115 NX3008PBKT,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2014 Automotive, AEC-Q101 Obsolete 1 (Unlimited) ROHS3 Compliant SC-75, SOT-416 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 3 250mW Ta 770mW Tc 2013-06-14 00:00:00 P-Channel 4.1 Ω @ 200mA, 4.5V 1.1V @ 250μA 46pF @ 15V 0.72nC @ 4.5V 200mA Ta 30V 2.5V 4.5V ±8V
BUK7Y25-60E/GFX BUK7Y25-60E/GFX NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant
BUK9520-55,127 BUK9520-55,127 NXP USA Inc. 2.8379
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0.00000000 download Tube 1998 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, ESD PROTECTION TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 116W Tc SWITCHING 0.02Ohm 55V SILICON N-Channel 20m Ω @ 25A, 5V 2V @ 1mA 2400pF @ 25V 52A 52A Tc 55V 208A 110 mJ 235 pF 200ns 5V ±10V 225ns
BUK764R3-40B,118 BUK764R3-40B,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2002 TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 254W Tc SWITCHING 0.0043Ohm 40V SILICON N-Channel 4.3m Ω @ 25A, 10V 4V @ 1mA 4824pF @ 25V 69nC @ 10V 176A 75A Tc 40V 706A 961 mJ 10V ±20V
PSMN016-100XS,127 PSMN016-100XS,127 NXP USA Inc. 0.0000
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0.00000000 Tube 2012 Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack, Isolated Tab not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 3 46.1W Tc 2013-06-14 00:00:00 N-Channel 16m Ω @ 10A, 10V 4V @ 1mA 2404pF @ 50V 46.2nC @ 10V 32.1A Tc 100V 10V ±20V
PSMN2R9-25YLC/GFX PSMN2R9-25YLC/GFX NXP USA Inc. 0.0000
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0.00000000 Obsolete 1 (Unlimited) ROHS3 Compliant
2PC1815Y,126 2PC1815Y,126 NXP USA Inc. 0.0000
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0.00000000 download Tape & Box (TB) 1996 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) unknown Through Hole 150°C TJ 8541.21.00.95 e3 Matte Tin (Sn) BOTTOM NOT SPECIFIED NOT SPECIFIED 2PC1815 NO O-PBCY-T3 Other Transistors Not Qualified 500mW 1 SINGLE NPN 0.5W AMPLIFIER SILICON NPN 80MHz 100nA ICBO 0.3 V 50V 150mA 120 @ 2mA 6V 300mV @ 10mA, 100mA 80MHz 3.5pF
BUK951R6-30E,127 BUK951R6-30E,127 NXP USA Inc. 0.0000
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0.00000000 Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 NO R-PSFM-T3 FET General Purpose Power AEC-Q101; IEC-60134 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 349W Tc SWITCHING 0.0016Ohm 30V SILICON N-Channel 1.4m Ω @ 25A, 10V 2.1V @ 1mA 16150pF @ 25V 113nC @ 5V 120A 120A Tc 30V 1400A 1405 mJ 5V 10V ±10V
PSMN017-30LL,115 PSMN017-30LL,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2013 Obsolete 1 (Unlimited) ROHS3 Compliant 8-VDFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8 YES FET General Purpose Power Single 37W Tc N-Channel 17m Ω @ 5A, 10V 2.15V @ 1mA 526pF @ 15V 10nC @ 10V 15A 15A Tc 30V 4.5V 10V ±20V
BUK7523-75A,127 BUK7523-75A,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1997 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 138W Tc SWITCHING 0.023Ohm 75V SILICON N-Channel 23m Ω @ 25A, 10V 4V @ 1mA 2385pF @ 25V 53A 53A Tc 75V 213A 120 mJ 10V ±20V
PMEM4030PS,115 PMEM4030PS,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2005 Obsolete 1 (Unlimited) ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount 1W PNP + Diode (Isolated) 100nA ICBO 50V 2A 200 @ 1A 2V 390mV @ 300mA, 3A 100MHz
BZX84-C33/LF1R BZX84-C33/LF1R NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) Automotive, AEC-Q101 Active 1 (Unlimited) ROHS3 Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -65°C~150°C 250mW ±5% TO-236AB (SOT23) 50nA @ 23.1V 900mV @ 10mA 80Ohms 33V
BUK7Y7R6-40E/GFX BUK7Y7R6-40E/GFX NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant
PSMN009-100W,127 PSMN009-100W,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1999 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.009Ohm 100V SILICON N-Channel 9m Ω @ 25A, 10V 4V @ 1mA 9000pF @ 25V 214nC @ 10V 100A 100A Tc 100V 300A 650 mJ 10V ±20V
BUK753R1-40B,127 BUK753R1-40B,127 NXP USA Inc. 0.0000
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0.00000000 Tube 2000 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 300W Tc SWITCHING 0.0031Ohm 40V SILICON N-Channel 3.1m Ω @ 25A, 10V 4V @ 1mA 6808pF @ 25V 94nC @ 10V 75A 75A Tc 40V 902A 1600 mJ 10V ±20V
MPSA42,412 MPSA42,412 NXP USA Inc. 0.0000
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0.00000000 download Bulk Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) unknown Through Hole 150°C TJ 8541.21.00.95 e3 Matte Tin (Sn) BOTTOM NOT SPECIFIED NOT SPECIFIED MPSA42 3 NO O-PBCY-T3 Other Transistors Not Qualified 500mW 1 SINGLE NPN 0.625W AMPLIFIER SILICON NPN 50MHz 100nA ICBO 0.5 V 300V 100mA 40 @ 30mA 10V 500mV @ 2mA, 20mA 50MHz 3pF
NX7002AK.R NX7002AK.R NXP USA Inc. 0.0000
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0.00000000 Obsolete 1 (Unlimited) ROHS3 Compliant
MPSA92,116 MPSA92,116 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) unknown Through Hole 150°C TJ 8541.21.00.95 e3 Matte Tin (Sn) BOTTOM NOT SPECIFIED NOT SPECIFIED MPSA92 3 NO O-PBCY-T3 Other Transistors Not Qualified 625mW 1 SINGLE PNP 0.625W SWITCHING SILICON PNP 50MHz 250nA ICBO 0.5 V 300V 100mA 25 @ 30mA 10V 500mV @ 2mA, 20mA 50MHz 6pF
PSMN7R0-40LS,115 PSMN7R0-40LS,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2010 Obsolete 1 (Unlimited) ROHS3 Compliant 8-VDFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8 YES FET General Purpose Power Single 65W Tc N-Channel 7m Ω @ 10A, 10V 4V @ 1mA 1286pF @ 12V 21.4nC @ 10V 40A 40A Tc 40V 10V ±20V
2N3904,412 2N3904,412 NXP USA Inc. 0.0000
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0.00000000 download Tube 1996 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) Through Hole 150°C TJ 8541.21.00.75 BOTTOM NOT SPECIFIED NOT SPECIFIED 2N3904 3 NO O-PBCY-T3 Other Transistors Not Qualified 500mW 1 SINGLE NPN 0.5W SWITCHING SILICON NPN 65ns 300MHz 240ns 50nA ICBO 0.3 V 40V 200mA 100 @ 10mA 1V 200mV @ 5mA, 50mA 300MHz 4pF
MPS3904,126 MPS3904,126 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1996 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 150°C TJ 8541.21.00.75 e3 Matte Tin (Sn) BOTTOM NOT SPECIFIED NOT SPECIFIED MPS3904 NO O-PBCY-T3 Other Transistors Not Qualified 500mW 1 SINGLE NPN 0.625W SWITCHING SILICON NPN 100ns 180MHz 990ns 50nA ICBO 0.3 V 40V 100mA 100 @ 10mA 1V 300mV @ 5mA, 50mA 180MHz 5pF
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