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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Voltage - Rated Additional Feature Package / Case Reach Compliance Code Frequency Mounting Type Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Gain Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Tolerance Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Source Url Status Check Date Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Current - Test Transistor Type Voltage - Test Power - Output Turn On Time-Max (ton) Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Turn Off Time-Max (toff) Current - Collector Cutoff (Max) VCEsat-Max Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Impedance-Max Voltage - Zener (Nom) (Vz) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Collector-Base Capacitance-Max
BS108,126 BS108,126 NXP USA Inc. 0.0000
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0.00000000 download Tape & Box (TB) 2001 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) BOTTOM NOT SPECIFIED NOT SPECIFIED 3 NO O-PBCY-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 1W Ta SWITCHING 5Ohm 200V SILICON N-Channel 5 Ω @ 100mA, 2.8V 1.8V @ 1mA 120pF @ 25V 0.3A 300mA Ta 200V 15 pF 2.8V ±20V
PHP129NQ04LT,127 PHP129NQ04LT,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1997 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 200W Tc SWITCHING 0.0071Ohm 40V SILICON N-Channel 5m Ω @ 25A, 10V 2V @ 1mA 3965pF @ 25V 44.2nC @ 5V 75A 75A Tc 40V 240A 475 mJ 4.5V 10V ±15V
BUK654R6-55C,127 BUK654R6-55C,127 NXP USA Inc. 0.0000
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0.00000000 Tube 2010 TrenchMOS™ Obsolete 1 (Unlimited) Non-RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 3 204W Tc 2013-06-14 00:00:00 N-Channel 5.4m Ω @ 25A, 10V 2.8V @ 1mA 7750pF @ 25V 124nC @ 10V 100A Tc 55V 4.5V 10V ±16V
BZX384-C6V2/ZLX BZX384-C6V2/ZLX NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) Automotive, AEC-Q101 Obsolete 1 (Unlimited) ROHS3 Compliant SC-76, SOD-323 Surface Mount -65°C~150°C 300mW ±5% SC-76-2 50nA @ 700mV 1.1V @ 100mA 10Ohms 6.2V
BZX84-A7V5/LF1R BZX84-A7V5/LF1R NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Automotive, AEC-Q101 Active 1 (Unlimited) ROHS3 Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -65°C~150°C 250mW ±1% 700nA @ 5V 900mV @ 10mA 15Ohm 7.5V
BUK751R6-30E,127 BUK751R6-30E,127 NXP USA Inc. 0.0000
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0.00000000 Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 NO R-PSFM-T3 FET General Purpose Power AEC-Q101; IEC-60134 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 349W Tc SWITCHING 0.0016Ohm 30V SILICON N-Channel 1.6m Ω @ 25A, 10V 4V @ 1mA 11960pF @ 25V 154nC @ 10V 120A 120A Tc 30V 1408A 1405 mJ 10V ±20V
MPSA06,116 MPSA06,116 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1996 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) unknown Through Hole 150°C TJ 8541.21.00.95 e3 Matte Tin (Sn) BOTTOM NOT SPECIFIED NOT SPECIFIED MPSA06 3 NO O-PBCY-T3 Other Transistors Not Qualified 625mW 1 SINGLE NPN 0.625W SWITCHING SILICON NPN 100MHz 50nA ICBO 0.25 V 80V 500mA 100 @ 100mA 1V 250mV @ 10mA, 100mA 100MHz
BZX384-C7V5/ZLX BZX384-C7V5/ZLX NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) Automotive, AEC-Q101 Obsolete 1 (Unlimited) ROHS3 Compliant SC-76, SOD-323 Surface Mount -65°C~150°C 300mW ±5% 50nA @ 700mV 1.1V @ 100mA 15Ohm 7.5V
BZX84-B24/LF1R BZX84-B24/LF1R NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) Automotive, AEC-Q101 Active 1 (Unlimited) ROHS3 Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -65°C~150°C 250mW ±2% TO-236AB (SOT23) 50nA @ 16.8V 900mV @ 10mA 70Ohms 24V
BZX384-C2V4/ZLX BZX384-C2V4/ZLX NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) Automotive, AEC-Q101 Obsolete 1 (Unlimited) ROHS3 Compliant SC-76, SOD-323 Surface Mount -65°C~150°C 300mW ±5% 50nA @ 700mV 1.1V @ 100mA 100Ohm 2.4V
BF199,112 BF199,112 NXP USA Inc. 0.0000
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0.00000000 download Bulk 2002 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) unknown Through Hole 150°C TJ 8541.21.00.75 e3 Matte Tin (Sn) BOTTOM 250 40 BF199 3 NO O-PBCY-T3 Other Transistors Not Qualified 500mW 1 SINGLE NPN 0.5W AMPLIFIER SILICON NPN 550MHz 100nA ICBO 25V 25mA 38 @ 7mA 10V 550MHz 0.5pF
PHM21NQ15T,518 PHM21NQ15T,518 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-VDFN Exposed Pad unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD 8 YES R-PDSO-N8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 62.5W Tc SWITCHING 0.055Ohm 150V SILICON N-Channel 55m Ω @ 15A, 10V 4V @ 1mA 2080pF @ 25V 36.2nC @ 10V 22.2A 22.2A Tc 150V 60A 250 mJ 5V 10V ±20V
PH7030L,115 PH7030L,115 NXP USA Inc. 0.2079
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Min: 1

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0.00000000 download Tape & Reel (TR) 2009 TrenchMOS™ Obsolete 1 (Unlimited) 4 EAR99 ROHS3 Compliant SC-100, SOT-669 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MO-235 DRAIN 62.5W Tc SWITCHING 0.011Ohm 30V SILICON N-Channel 7.9m Ω @ 10A, 10V 2V @ 1mA 1362pF @ 10V 12nC @ 5V 68A 68A Tc 30V 220A 115 mJ 4.5V 10V ±20V
BY229X-800,127 BY229X-800,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1998 Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-220-2 Full Pack, Isolated Tab unknown Through Hole 8541.10.00.80 e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED BY229X-800 3 NO R-PSFM-T2 150°C Rectifier Diodes Not Qualified SILICON 1 SINGLE Standard 8A FAST SOFT RECOVERY 1 800V 66A Fast Recovery =< 500ns, > 200mA (Io) 400μA @ 600V 1.85V @ 20A 150°C Max 600V 8A 135ns
PBSS5160K,115 PBSS5160K,115 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2008 Obsolete 1 (Unlimited) ROHS3 Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C TJ PBSS5160 425mW PNP 100nA 60V 700mA 150 @ 500mA 5V 340mV @ 100mA, 1A 185MHz
2N4401,116 2N4401,116 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) unknown Through Hole 150°C TJ 8541.21.00.75 e3 Matte Tin (Sn) BOTTOM NOT SPECIFIED NOT SPECIFIED 2N4401 3 NO O-PBCY-T3 Other Transistors Not Qualified 630mW 1 SINGLE NPN 0.35W SWITCHING SILICON NPN 35ns 250MHz 250ns 50nA ICBO 0.75 V 40V 600mA 100 @ 150mA 1V 750mV @ 50mA, 500mA 250MHz 6.5pF
BUK9Y12-40E/GFX BUK9Y12-40E/GFX NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant
BUK7514-60E,127 BUK7514-60E,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 3 NO FET General Purpose Power Single 96W Tc N-Channel 13m Ω @ 15A, 10V 4V @ 1mA 1730pF @ 25V 22.9nC @ 10V 58A 58A Tc 60V 10V ±20V
MMRF1013HR5 MMRF1013HR5 NXP USA Inc. 0.0000
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0.00000000 10 Weeks Tape & Reel (TR) 2014 Active Not Applicable EAR99 ROHS3 Compliant 65V SOT-979A 2.9GHz 8541.29.00.75 260 40 13.3dB 100mA LDMOS (Dual) 30V 320W
2PC4081R/ZLX 2PC4081R/ZLX NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant
BC327,412 BC327,412 NXP USA Inc. 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) Through Hole 150°C TJ 8541.21.00.95 e3 Matte Tin (Sn) BOTTOM WIRE NOT SPECIFIED NOT SPECIFIED BC327 3 NO O-PBCY-W3 Other Transistors Not Qualified 625mW 1 SINGLE PNP 0.625W SWITCHING SILICON PNP 100MHz 100nA ICBO 0.7 V 45V 500mA 100 @ 100mA 1V 700mV @ 50mA, 500mA 80MHz
PMF87EN,115 PMF87EN,115 NXP USA Inc. 0.5978
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0.00000000 download Tape & Reel (TR) 2012 Obsolete 1 (Unlimited) ROHS3 Compliant SC-70, SOT-323 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 3 275mW Ta N-Channel 80m Ω @ 1.7A, 10V 2.5V @ 250μA 135pF @ 15V 4.7nC @ 10V 1.7A Ta 30V 4.5V 10V ±20V
SI4410DY,518 SI4410DY,518 NXP USA Inc. 0.8187
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Min: 1

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0.00000000 download Tape & Reel (TR) 2009 TrenchMOS™ Obsolete 2 (1 Year) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e4 NICKEL PALLADIUM GOLD DUAL GULL WING 260 30 8 YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.0135Ohm 30V SILICON N-Channel 13.5m Ω @ 10A, 10V 1V @ 250μA 34nC @ 5V 10A 30V 4.5V 10V ±20V
BC327,126 BC327,126 NXP USA Inc. 0.0000
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0.00000000 download Tape & Box (TB) 2009 Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) unknown Through Hole 150°C TJ BC327 3 625mW PNP 100nA ICBO 45V 500mA 100 @ 100mA 1V 700mV @ 50mA, 500mA 80MHz
BUK9E3R2-40E,127 BUK9E3R2-40E,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 NO R-PSIP-T3 FET General Purpose Power AEC-Q101; IEC-60134 1 SINGLE WITH BUILT-IN DIODE DRAIN 234W Tc SWITCHING 0.0032Ohm 40V SILICON N-Channel 2.8m Ω @ 25A, 10V 2.1V @ 1mA 9150pF @ 25V 69.5nC @ 5V 100A 100A Tc 40V 781A 419 mJ 5V 10V ±10V
PSMN9R5-100XS,127 PSMN9R5-100XS,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2012 Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack, Isolated Tab not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 3 52.6W Tc 2013-06-14 00:00:00 N-Channel 9.6m Ω @ 10A, 10V 4V @ 1mA 4454pF @ 50V 81.5nC @ 10V 44.2A Tc 100V 10V ±20V
PMZB290UN/FYL PMZB290UN/FYL NXP USA Inc. 0.0000
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0.00000000 Obsolete 1 (Unlimited) ROHS3 Compliant
BUK9609-55A,118 BUK9609-55A,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2011 TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 211W Tc SWITCHING 0.01Ohm 55V SILICON N-Channel 8m Ω @ 25A, 10V 2V @ 1mA 4633pF @ 25V 60nC @ 5V 75A 75A Tc 55V 433A 400 mJ 4.5V 10V ±15V
PHB11N06LT,118 PHB11N06LT,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1999 TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING 3 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 33W Tc SWITCHING 0.15Ohm 55V SILICON N-Channel 130m Ω @ 5.5A, 10V 2V @ 1mA 330pF @ 25V 5.2nC @ 5V 10.3A 10.3A Tc 55V 41A 25 mJ 5V 10V ±15V
PHT4NQ10LT,135 PHT4NQ10LT,135 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) 4 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA Surface Mount -65°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) DUAL GULL WING 4 YES R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 6.9W Tc SWITCHING 0.25Ohm 100V SILICON N-Channel 250m Ω @ 1.75A, 5V 2V @ 1mA 374pF @ 25V 12.2nC @ 5V 3.5A 3.5A Tc 100V 5V ±16V
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