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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Additional Feature Package / Case Reach Compliance Code Mounting Type Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Power - Max Number of Elements Configuration JEDEC-95 Code Tolerance Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Supplier Device Package Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Power Dissipation-Max Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Source Url Status Check Date Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Transistor Type Turn On Time-Max (ton) Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Turn Off Time-Max (toff) Current - Collector Cutoff (Max) VCEsat-Max Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Impedance-Max Voltage - Zener (Nom) (Vz) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
BUK7Y25-60E/GFX BUK7Y25-60E/GFX NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant
PSMN011-30YL,115 PSMN011-30YL,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2011 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant SC-100, SOT-669 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 4 49W Tc 2013-06-14 00:00:00 N-Channel 10.7m Ω @ 15A, 10V 2.15V @ 1mA 726pF @ 15V 14.8nC @ 10V 51A Tj 30V 4.5V 10V ±20V
PH9025L,115 PH9025L,115 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2007 TrenchMOS™ Obsolete 1 (Unlimited) 4 EAR99 ROHS3 Compliant LOW CONDUCTION LOSS SC-100, SOT-669 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MO-235 DRAIN 62.5W Tc SWITCHING 0.013Ohm 25V SILICON N-Channel 9m Ω @ 10A, 10V 2.15V @ 1mA 1414pF @ 30V 12.8nC @ 4.5V 66A 66A Tc 25V 240A 55 mJ 4.5V 10V ±20V
BUK95150-55A,127 BUK95150-55A,127 NXP USA Inc. 1.7129
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0.00000000 download Tube 2000 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 53W Tc SWITCHING 0.161Ohm 55V SILICON N-Channel 137m Ω @ 13A, 10V 2V @ 1mA 339pF @ 25V 13A 13A Tc 55V 53A 25 mJ 4.5V 10V ±10V
PSMN7R0-40LS,115 PSMN7R0-40LS,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2010 Obsolete 1 (Unlimited) ROHS3 Compliant 8-VDFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8 YES FET General Purpose Power Single 65W Tc N-Channel 7m Ω @ 10A, 10V 4V @ 1mA 1286pF @ 12V 21.4nC @ 10V 40A 40A Tc 40V 10V ±20V
PHU108NQ03LT,127 PHU108NQ03LT,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2005 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 3 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 187W Tc SWITCHING 0.0075Ohm 25V SILICON N-Channel 6m Ω @ 25A, 10V 2V @ 1mA 1375pF @ 12V 16.3nC @ 4.5V 75A 75A Tc 25V 240A 180 mJ 5V 10V ±20V
BUK7226-75A/C1,118 BUK7226-75A/C1,118 NXP USA Inc. 1.4876
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0.00000000 download Tape & Reel (TR) 2008 TrenchMOS™ Active 1 (Unlimited) ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) DPAK 158W Tc N-Channel 26mOhm @ 25A, 10V 4V @ 1mA 2385pF @ 25V 48nC @ 10V 45A Tc 75V 10V ±20V
BUK7524-55A,127 BUK7524-55A,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1997 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 106W Tc SWITCHING 0.024Ohm 55V SILICON N-Channel 24m Ω @ 25A, 10V 4V @ 1mA 1310pF @ 25V 47A 47A Tc 55V 188A 76 mJ 10V ±20V
BUK6240-75C,118 BUK6240-75C,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2010 TrenchMOS™ Obsolete 1 (Unlimited) Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3 60W Tc N-Channel 46m Ω @ 10A, 10V 2.8V @ 1mA 1280pF @ 25V 21.4nC @ 10V 22A Tc 75V 4.5V 10V ±16V
BUK7614-55,118 BUK7614-55,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1998 TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE GULL WING 260 40 3 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 142W Tc SWITCHING 0.014Ohm 55V 2013-06-14 00:00:00 SILICON N-Channel 14m Ω @ 25A, 10V 4V @ 1mA 2900pF @ 25V 68A 68A Tc 55V 240A 200 mJ 270 pF 111ns 10V ±16V 105ns
BUK9506-55A,127 BUK9506-55A,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1997 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 300W Tc SWITCHING 0.0067Ohm 55V SILICON N-Channel 5.8m Ω @ 25A, 10V 2V @ 1mA 8600pF @ 25V 75A 75A Tc 55V 616A 1100 mJ 4.5V 10V ±15V
BUK9509-55A,127 BUK9509-55A,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2000 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 211W Tc SWITCHING 0.01Ohm 55V SILICON N-Channel 8m Ω @ 25A, 10V 2V @ 1mA 4633pF @ 25V 60nC @ 5V 75A 75A Tc 55V 433A 400 mJ 4.5V 10V ±15V
BUK9506-55B,127 BUK9506-55B,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2004 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 258W Tc SWITCHING 0.0064Ohm 55V SILICON N-Channel 5.4m Ω @ 25A, 10V 2V @ 1mA 7565pF @ 25V 60nC @ 5V 75A 75A Tc 55V 587A 679 mJ 4.5V 10V ±15V
PHD18NQ10T,118 PHD18NQ10T,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1999 TrenchMOS™ Obsolete 1 (Unlimited) Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3 79W Tc 2013-06-14 00:00:00 N-Channel 90m Ω @ 9A, 10V 4V @ 1mA 633pF @ 25V 21nC @ 10V 18A Tc 100V 10V ±20V
PHP75NQ08T,127 PHP75NQ08T,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2009 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 157W Tc SWITCHING 0.013Ohm 75V SILICON N-Channel 13m Ω @ 25A, 10V 4V @ 1mA 1985pF @ 25V 40nC @ 10V 75A 75A Tc 75V 240A 120 mJ 10V ±20V
PHD98N03LT,118 PHD98N03LT,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 111W Tc SWITCHING 0.0073Ohm 25V SILICON N-Channel 5.9m Ω @ 25A, 10V 2V @ 1mA 3000pF @ 20V 40nC @ 5V 75A 75A Tc 25V 240A 183 mJ 5V 10V ±20V
PSMN6R5-25YLC/GFX PSMN6R5-25YLC/GFX NXP USA Inc. 0.0000
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0.00000000 Obsolete 1 (Unlimited) ROHS3 Compliant
BUK653R4-40C,127 BUK653R4-40C,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2010 TrenchMOS™ Obsolete 1 (Unlimited) Non-RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 3 204W Tc 2013-06-14 00:00:00 N-Channel 3.6m Ω @ 25A, 10V 2.8V @ 1mA 8020pF @ 25V 125nC @ 10V 100A Tc 40V 4.5V 10V ±16V
BUK753R5-60E,127 BUK753R5-60E,127 NXP USA Inc. 0.0000
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0.00000000 Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 3 NO FET General Purpose Power Single 293W Tc N-Channel 3.5m Ω @ 25A, 10V 4V @ 1mA 8920pF @ 25V 114nC @ 10V 120A 120A Tc 60V 10V ±20V
BC517,112 BC517,112 NXP USA Inc. 0.0000
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0.00000000 download Bulk 2004 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) Through Hole 150°C TJ 8541.21.00.75 e3 TIN BOTTOM 250 40 BC517 3 NO O-PBCY-T3 Other Transistors Not Qualified 625mW 1 NPN 0.625W AMPLIFIER SILICON NPN - Darlington 220MHz 100nA ICBO 1 V 30V 500mA 30000 @ 20mA 2V 1V @ 100μA, 100mA 220MHz
PHM30NQ10T,518 PHM30NQ10T,518 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-VDFN Exposed Pad unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD 8 YES R-PDSO-N8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 62.5W Tc SWITCHING 0.02Ohm 100V SILICON N-Channel 20m Ω @ 18A, 10V 4V @ 1mA 3600pF @ 25V 53.7nC @ 10V 37.6A 37.6A Tc 100V 60A 10V ±20V
BZX84-C18/LF1VL BZX84-C18/LF1VL NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) Automotive, AEC-Q101 Active 1 (Unlimited) ROHS3 Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -65°C~150°C 250mW ±5% TO-236AB (SOT23) 50nA @ 12.6V 900mV @ 10mA 45Ohms 18V
BUK9610-55A,118 BUK9610-55A,118 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2001 TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) SINGLE GULL WING 260 40 3 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 200W Tc SWITCHING 0.011Ohm 55V SILICON N-Channel 9m Ω @ 25A, 10V 2V @ 1mA 4307pF @ 25V 68nC @ 5V 100A 75A Tc 55V 400A 333 mJ 4.5V 10V ±15V
BC638,112 BC638,112 NXP USA Inc. 0.0000
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0.00000000 download Bulk 2004 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) unknown Through Hole 150°C TJ 8541.21.00.75 e3 Matte Tin (Sn) BOTTOM NOT SPECIFIED NOT SPECIFIED BC638 3 NO O-PBCY-T3 Other Transistors Not Qualified 830mW 1 SINGLE PNP 0.8W SWITCHING SILICON PNP 145MHz 100nA ICBO 0.5 V 60V 1A 63 @ 150mA 2V 500mV @ 50mA, 500mA 100MHz
PSMN014-60LS,115 PSMN014-60LS,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2010 Obsolete 1 (Unlimited) ROHS3 Compliant 8-VDFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8 YES FET General Purpose Power Single 65W Tc N-Channel 14m Ω @ 10A, 10V 4V @ 1mA 1264pF @ 30V 19.6nC @ 10V 40A 40A Tc 60V 10V ±20V
BUK9Y11-30B/C1,115 BUK9Y11-30B/C1,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant
IRFZ44N,127 IRFZ44N,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1999 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant ESD PROTECTED TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE 260 30 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 110W Tc SWITCHING 0.022Ohm 55V SILICON N-Channel 22m Ω @ 25A, 10V 4V @ 1mA 1800pF @ 25V 62nC @ 10V 49A 49A Tc 55V 160A 110 mJ 10V ±20V
BUK956R1-100E,127 BUK956R1-100E,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 3 NO FET General Purpose Power Single 349W Tc N-Channel 5.9m Ω @ 25A, 10V 2.1V @ 1mA 17460pF @ 25V 133nC @ 5V 120A 120A Tc 100V 5V 10V ±10V
NOCATSTYPE NOCATSTYPE NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant
BUK9515-60E,127 BUK9515-60E,127 NXP USA Inc. 0.0000
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Min: 1

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0.00000000 Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 3 NO FET General Purpose Power Single 96W Tc N-Channel 13m Ω @ 15A, 10V 2.1V @ 1mA 2651pF @ 25V 20.5nC @ 5V 54A 54A Tc 60V 5V 10V ±10V
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