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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Max Supply Voltage Reach Compliance Code Impedance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Subcategory Qualification Status Max Power Dissipation Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Polarity Forward Current Forward Voltage Tolerance Case Connection Polarity/Channel Type DC Current Gain-Min (hFE) Working Voltage Element Configuration Voltage Tolerance Power Dissipation Turn On Delay Time Max Reverse Leakage Current Test Current Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Zener Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Turn On Time-Max (ton) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Turn Off Time-Max (toff) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Current - Collector (Ic) (Max) Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) Reference Voltage Voltage Tol-Max Impedance-Max Voltage - Zener (Nom) (Vz) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic
JAN2N6790 JAN2N6790 Microsemi Corporation 0.0000
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0.00000000 download Through Hole Bulk 1997 Military, MIL-PRF-19500/555 Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant TO-205AF Metal Can Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) BOTTOM WIRE O-MBCY-W3 FET General Purpose Powers Qualified MIL-19500 1 SINGLE WITH BUILT-IN DIODE DRAIN 800mW Tc 3.5A 0.8Ohm 200V SILICON N-Channel 850m Ω @ 3.5A, 10V 4V @ 250μA 14.3nC @ 10V 3.5A Tc 200V 14A 90ns 10V ±20V 100ns
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