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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type Rep Pk Reverse Voltage-Max JEDEC-95 Code Polarity Tolerance Case Connection Element Configuration Power Dissipation Turn On Delay Time Supplier Device Package Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Zener Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Turn On Time-Max (ton) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Turn Off Time-Max (toff) Reference Voltage Voltage Tol-Max Working Test Current Impedance-Max Voltage - Zener (Nom) (Vz) Regulation Current-Nom (Ireg) Limiting Voltage-Max Dynamic Impedance-Min
1N5279B (DO-35) 1N5279B (DO-35) Microsemi Corporation 0.0000
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0.00000000 download Bulk 2005 Active 1 (Unlimited) Non-RoHS Compliant DO-204AH, DO-35, Axial Through Hole -65°C~175°C 1N5279 500mW ±5% DO-35 100nA @ 137V 1.5V @ 200mA 2.2kOhms 180V
JANTXV2N6800 JANTXV2N6800 Microsemi Corporation 0.0000
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0.00000000 Through Hole Bulk 1997 Military, MIL-PRF-19500/557 Obsolete 1 (Unlimited) 3 Non-RoHS Compliant 3 HIGH RELIABILITY TO-205AF Metal Can Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.21.00.95 e0 Tin/Lead (Sn/Pb) BOTTOM WIRE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Qualified MIL-19500 1 SINGLE WITH BUILT-IN DIODE DRAIN 800mW Ta 25W Tc 3A SWITCHING 400V SILICON N-Channel 1.1 Ω @ 3A, 10V 4V @ 250μA 34.75nC @ 10V 20V 3A 3A Tc 400V 14A 10V ±20V
APT5020BNFR APT5020BNFR Microsemi Corporation 0.0000
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0.00000000 Tube POWER MOS IV® Obsolete 1 (Unlimited) TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) TO-247AD 360W Tc N-Channel 200mOhm @ 14A, 10V 4V @ 1mA 3500pF @ 25V 210nC @ 10V 28A Tc 500V 10V ±30V
APT47M60J APT47M60J Microsemi Corporation 0.0000
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0.00000000 download 22 Weeks IN PRODUCTION (Last Updated: 3 weeks ago) Chassis Mount, Screw Tube 1997 POWER MOS 8™ yes Active 1 (Unlimited) 4 RoHS Compliant Lead Free 47A No 4 AVALANCHE RATED, UL RECOGNIZED SOT-227-4, miniBLOC Chassis Mount -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE UPPER UNSPECIFIED 4 1 SINGLE WITH BUILT-IN DIODE ISOLATED 540W 75 ns 540W Tc 49A SWITCHING 0.09Ohm 225 ns SILICON N-Channel 90m Ω @ 33A, 10V 5V @ 2.5mA 13190pF @ 25V 330nC @ 10V 85ns 70 ns 30V 49A Tc 10V ±30V
APT6010JLL APT6010JLL Microsemi Corporation 0.0000
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0.00000000 download IN PRODUCTION (Last Updated: 1 month ago) Chassis Mount, Screw Tube 1997 POWER MOS 7® Active 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free 47A No 4 SOT-227-4, miniBLOC Chassis Mount 600V MOSFET (Metal Oxide) 520W 1 520W 12 ns ISOTOP® 47A 34 ns N-Channel 100mOhm @ 23.5A, 10V 5V @ 2.5mA 6710pF @ 25V 150nC @ 10V 17ns 10 ns 30V 47A 600V 6.71nF 100 mΩ
JANTXV2N6849 JANTXV2N6849 Microsemi Corporation 0.0000
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0.00000000 download Through Hole Bulk 1997 Military, MIL-PRF-19500/564 no Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Lead, Tin 3 RADIATION HARDENED TO-205AF Metal Can Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) BOTTOM WIRE NOT SPECIFIED NOT SPECIFIED Qualified MILITARY STANDARD (USA) 1 SINGLE WITH BUILT-IN DIODE DRAIN 800mW 800mW Ta 25W Tc 6.5A SWITCHING SILICON P-Channel 320m Ω @ 6.5A, 10V 4V @ 250μA 34.8nC @ 10V 20V 6.5A Tc 100V 25A 500 mJ 10V ±20V
APT30M70SVRG APT30M70SVRG Microsemi Corporation 0.0000
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0.00000000 Surface Mount Tube 1997 POWER MOS V® yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free 48A No 3 TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Surface Mount -55°C~150°C TJ 300V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE MATTE TIN SINGLE GULL WING 245 30 3 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 370W 14 ns 370W Tc 48A SWITCHING 0.07Ohm 57 ns SILICON N-Channel 70m Ω @ 500mA, 10V 4V @ 1mA 5870pF @ 25V 225nC @ 10V 21ns 10 ns 30V 48A Tc 10V ±30V
JANTXV2N6764 JANTXV2N6764 Microsemi Corporation 0.0000
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0.00000000 download 36 Weeks Through Hole Bulk 1997 Military, MIL-PRF-19500/543 Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant 3 RADIATION HARDENED TO-204AE not_compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) BOTTOM PIN/PEG 2 O-MBFM-P2 Qualified MILITARY STANDARD (USA) 1 SINGLE WITH BUILT-IN DIODE DRAIN 4W Ta 150W Tc 38A SWITCHING 0.055Ohm 100V SILICON N-Channel 65m Ω @ 38A, 10V 4V @ 250μA 125nC @ 10V 38A Tc 100V 70A 10V ±20V
APL502B2G APL502B2G Microsemi Corporation 0.0000
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0.00000000 download 24 Weeks Through Hole Tube 1997 Active 1 (Unlimited) 3 EAR99 21.46mm RoHS Compliant Lead Free Gold, Tin 58A No 3 TO-247-3 Variant 5.31mm 16.26mm Through Hole -55°C~150°C TJ 500V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 730W 13 ns 730W Tc 58A 0.09Ohm 56 ns SILICON N-Channel 90m Ω @ 29A, 12V 4V @ 2.5mA 9000pF @ 25V 27ns 16 ns 30V 500V 58A Tc 15V ±30V
2N6766T1 2N6766T1 Microsemi Corporation 0.0000
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0.00000000 download Through Hole Bulk 1997 Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant 3 TO-254-3, TO-254AA (Straight Leads) Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE PIN/PEG 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 4W Ta 150W Tc 30A 0.065Ohm 200V SILICON N-Channel 90m Ω @ 30A, 10V 4V @ 250μA 115nC @ 10V 20V 30A Tc 200V 10V ±20V
APT80F60J APT80F60J Microsemi Corporation 0.0000
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0.00000000 download 14 Weeks IN PRODUCTION (Last Updated: 1 month ago) Chassis Mount, Screw Tube 1997 POWER MOS 8™ yes Active 1 (Unlimited) 4 RoHS Compliant No 4 AVALANCHE RATED, UL RECOGNIZED SOT-227-4, miniBLOC Chassis Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE UPPER UNSPECIFIED 4 1 SINGLE WITH BUILT-IN DIODE ISOLATED 134 ns 961W Tc 84A SWITCHING 0.055Ohm 600V 408 ns SILICON N-Channel 55m Ω @ 60A, 10V 5V @ 2.5mA 23994pF @ 25V 598nC @ 10V 156ns 123 ns 30V 84A Tc 600V 3352 mJ 10V ±30V
APT6M100K APT6M100K Microsemi Corporation 0.0000
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0.00000000 download Through Hole Tube 2006 yes Obsolete 1 (Unlimited) 3 10.26mm RoHS Compliant Lead Free 5.8A No FAST SWITCHING, AVALANCHE RATED TO-220-3 9.19mm 4.72mm Through Hole 6.000006g -55°C~150°C TJ 1kV MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE 3 R-PSFM-T3 FET General Purpose Power 1 Single TO-220AB DRAIN 225W 6.4 ns 225W Tc 6A SWITCHING 22 ns SILICON N-Channel 2.5 Ω @ 3A, 10V 5V @ 1mA 1410pF @ 25V 43nC @ 10V 5.8ns 5.4 ns 30V 6A 6A Tc 1000V 20A 10V ±30V
JANTX2N6898 JANTX2N6898 Microsemi Corporation 0.0000
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0.00000000 Through Hole Bulk 2015 Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant No TO-204AA, TO-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) BOTTOM PIN/PEG 2 O-MBFM-P2 Other Transistors Qualified 1 SINGLE WITH BUILT-IN DIODE TO-204AE DRAIN 150W Tc SWITCHING SILICON P-Channel 200m Ω @ 15.8A, 10V 4V @ 250μA 3000pF @ 25V 25A 25A Tc 100V 60A 10V ±20V
APT5020BN APT5020BN Microsemi Corporation 0.0000
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0.00000000 download Tube 1997 POWER MOS IV® Obsolete 1 (Unlimited) 3 Non-RoHS Compliant TO-247-3 unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AD DRAIN 360W Tc SWITCHING 0.2Ohm 500V SILICON N-Channel 200m Ω @ 14A, 10V 4V @ 1mA 3500pF @ 25V 210nC @ 10V 28A 28A Tc 500V 112A 350 pF 124ns 10V ±30V 237ns
APT40SM120S APT40SM120S Microsemi Corporation 0.0000
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0.00000000 download 22 Weeks OBSOLETE (Last Updated: 1 month ago) Surface Mount Bulk 1997 Obsolete 1 (Unlimited) EAR99 RoHS Compliant TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Surface Mount -55°C~175°C TJ SiCFET (Silicon Carbide) 273W Tc 41A N-Channel 100m Ω @ 20A, 20V 3V @ 1mA (Typ) 2560pF @ 1000V 130nC @ 20V 41A Tc 1200V 20V +25V, -10V
JAN1N983BUR-1 JAN1N983BUR-1 Microsemi Corporation 0.0000
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0.00000000 download 14 Weeks Surface Mount Bulk 1999 Military, MIL-PRF-19500/117 Active 1 (Unlimited) 175°C -65°C Non-RoHS Compliant Lead, Tin 2 DO-213AA (Glass) Surface Mount -65°C~175°C 500mW 500mW ±5% Single DO-213AA 500nA @ 62V 1.1V @ 200mA 82V 330Ohms 82V
1N7054-1 1N7054-1 Microsemi Corporation 0.0000
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0.00000000 20 Weeks Bulk Active Non-RoHS Compliant NO Current Regulator Diodes SILICON CURRENT REGULATOR DIODE 50V 0.5W 9.1mA 6.55V 20000Ohm
APT10045LFLLG APT10045LFLLG Microsemi Corporation 0.0000
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0.00000000 download Through Hole Tube 1997 POWER MOS 7® Active 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free 23A No TO-264-3, TO-264AA Through Hole 1kV MOSFET (Metal Oxide) 565W 1 565W 10 ns TO-264 [L] 23A 30 ns N-Channel 460mOhm @ 11.5A, 10V 5V @ 2.5mA 4350pF @ 25V 154nC @ 10V 5ns 8 ns 30V 23A Tc 1000V 4.35nF 460 mΩ
APT10M11B2VFRG APT10M11B2VFRG Microsemi Corporation 0.0000
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0.00000000 download Through Hole Tube 1999 POWER MOS V® yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 100A TO-247-3 Variant Through Hole -55°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 520W Tc 100A SWITCHING 0.011Ohm SILICON N-Channel 11m Ω @ 500mA, 10V 4V @ 2.5mA 10300pF @ 25V 450nC @ 10V 100A Tc 400A 2500 mJ 10V ±30V
APT5016BLLG APT5016BLLG Microsemi Corporation 0.0000
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0.00000000 download IN PRODUCTION (Last Updated: 4 weeks ago) Through Hole Tube 1997 POWER MOS 7® yes Active 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 30A No TO-247-3 Through Hole -55°C~150°C TJ 500V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE 3 R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-247AD DRAIN 10 ns 329W Tc 30A SWITCHING 27 ns SILICON N-Channel 160m Ω @ 15A, 10V 5V @ 1mA 2833pF @ 25V 72nC @ 10V 10ns 14 ns 30V 30A Tc 10V ±30V
1N5942B G 1N5942B G Microsemi Corporation 0.0000
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0.00000000 download Bulk 1999 yes Active 1 (Unlimited) 2 EAR99 Non-RoHS Compliant DO-204AL, DO-41, Axial Through Hole -65°C~175°C ZENER 8541.10.00.50 WIRE 1N5942 NO O-LALF-W2 1.25W SILICON 1 SINGLE ZENER DIODE UNIDIRECTIONAL ±5% ISOLATED 1μA @ 38.8V 1.2V @ 200mA 1.5W 51V 5% 7.3mA 70Ohm 51V
2N7227U 2N7227U Microsemi Corporation 0.0000
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0.00000000 download Surface Mount Bulk 1997 Obsolete 1 (Unlimited) 3 Non-RoHS Compliant No 3 TO-267AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM 3 1 SINGLE WITH BUILT-IN DIODE TO-276AB DRAIN 4W Ta 150W Tc 14A 0.415Ohm 400V SILICON N-Channel 315m Ω @ 9A, 10V 4V @ 250μA 110nC @ 10V 20V 14A Tc 400V 10V ±20V
APT53N60SC6 APT53N60SC6 Microsemi Corporation 0.0000
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0.00000000 download Surface Mount Bulk 1997 Obsolete 1 (Unlimited) 150°C -55°C Non-RoHS Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 417W 14 ns D3Pak 417W Tc 53A 151 ns N-Channel 70mOhm @ 25.8A, 10V 3.5V @ 1.72mA 4020pF @ 25V 154nC @ 10V 36ns 74 ns 20V Super Junction 53A Tc 600V 4.02nF 10V ±20V 70 mΩ
JANTXV2N6782U JANTXV2N6782U Microsemi Corporation 0.0000
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0.00000000 download Surface Mount Bulk 1997 Military, MIL-PRF-19500/556 no Obsolete 1 (Unlimited) 15 EAR99 Non-RoHS Compliant No 18-CLCC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) QUAD 18 R-CQCC-N15 Qualified MIL-19500 1 SINGLE WITH BUILT-IN DIODE SOURCE 800mW Ta 15W Tc 3.5A SWITCHING 0.61Ohm 100V SILICON N-Channel 610m Ω @ 3.5A, 10V 4V @ 250μA 8.1nC @ 10V 20V 3.5A Tc 100V 14A 7 mJ 10V ±20V
APT6040BN APT6040BN Microsemi Corporation 0.0000
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0.00000000 download Tube POWER MOS IV® no Obsolete 1 (Unlimited) 3 Non-RoHS Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AD DRAIN 310W Tc SWITCHING 0.4Ohm 600V SILICON N-Channel 400m Ω @ 9A, 10V 4V @ 1mA 2950pF @ 25V 130nC @ 10V 18A 18A Tc 600V 72A 10V ±30V
APT5010JVRU2 APT5010JVRU2 Microsemi Corporation 0.0000
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0.00000000 download 16 Weeks Chassis Mount, Screw Bulk 2004 yes Active 1 (Unlimited) 4 EAR99 38.2mm RoHS Compliant Lead Free No 4 AVALANCHE RATED SOT-227-4, miniBLOC 9.6mm 25.4mm Chassis Mount 30.000004g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE UPPER UNSPECIFIED 4 1 FET General Purpose Power 1 ISOLATED Single 450W 18 ns 450W Tc 44A SWITCHING 54 ns SILICON N-Channel 100m Ω @ 22A, 10V 4V @ 2.5mA 7410pF @ 25V 312nC @ 10V 16ns 5 ns 30V 500V 44A Tc 2500 mJ 10V ±30V
JAN1N5543CUR-1 JAN1N5543CUR-1 Microsemi Corporation 0.0000
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0.00000000 download 14 Weeks Bulk 1999 Military, MIL-PRF-19500/437 Active 1 (Unlimited) Non-RoHS Compliant DO-213AA (Glass) Surface Mount -65°C~175°C 500mW ±2% DO-213AA 10nA @ 22.4V 1.1V @ 200mA 100Ohms 25V
APT40N60JCU3 APT40N60JCU3 Microsemi Corporation 0.0000
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0.00000000 download 36 Weeks Chassis Mount, Screw Bulk 2006 yes Active 1 (Unlimited) 4 EAR99 38.2mm RoHS Compliant No 4 AVALANCHE RATED SOT-227-4, miniBLOC 9.6mm 25.4mm Chassis Mount 30.000004g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE UPPER UNSPECIFIED 4 1 FET General Purpose Power 1 ISOLATED Single 290W 20 ns 290W Tc 40A SWITCHING 0.07Ohm 600V 115 ns SILICON N-Channel 70m Ω @ 20A, 10V 3.9V @ 1mA 7015pF @ 25V 259nC @ 10V 30ns 10 ns 20V 40A Tc 600V 10V ±20V
APT5017BVRG APT5017BVRG Microsemi Corporation 0.0000
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0.00000000 download 4 Weeks IN PRODUCTION (Last Updated: 1 month ago) Through Hole Tube POWER MOS V® Active 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free 30A No TO-247-3 Through Hole 500V MOSFET (Metal Oxide) 1 370W 12 ns TO-247 [B] 30A 55 ns N-Channel 170mOhm @ 500mA, 10V 4V @ 1mA 5280pF @ 25V 300nC @ 10V 14ns 11 ns 30V 30A Tc 500V 5.28nF
MSC090SMA070S MSC090SMA070S Microsemi Corporation 0.0000
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0.00000000 19 Weeks Active 1 (Unlimited) RoHS Compliant TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Surface Mount -55°C~175°C TJ SiCFET (Silicon Carbide) D3Pak N-Channel 700V
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