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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IPU60R1K5CEAKMA1 IPU60R1K5CEAKMA1 Infineon Technologies 0.0000
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0.00000000 download 6 Weeks Tube 2015 CoolMOS™ CE yes Obsolete 3 (168 Hours) 3 Non-RoHS Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 49W SWITCHING 600V SILICON N-Channel 1.5 Ω @ 1.1A, 10V 3.5V @ 90μA 200pF @ 100V 9.4nC @ 10V 5A 3.1A Tc 600V 8A 26 mJ
FQA6N70 FQA6N70 Rochester Electronics, LLC 0.0000
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0.00000000 download Tube QFET® yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant TO-3P-3, SC-65-3 unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT APPLICABLE NOT APPLICABLE 3 NO R-PSFM-T3 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE 152W Tc SWITCHING 700V SILICON N-Channel 1.5 Ω @ 3.2A, 10V 5V @ 250μA 1.4pF @ 25V 40nC @ 10V 6.4A 6.4A Tc 700V 25.6A 600 mJ 10V ±30V
AOL1432 AOL1432 Alpha & Omega Semiconductor Inc. 2.7615
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0.00000000 Surface Mount Tape & Reel (TR) Obsolete 1 (Unlimited) RoHS Compliant 3-PowerSMD, Flat Leads Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 2W Ta 30W Tc 44A N-Channel 8.5m Ω @ 30A, 10V 3V @ 250μA 1716pF @ 12.5V 32nC @ 10V 12A Ta 44A Tc 25V 4.5V 10V ±20V
IXFT52N30Q IXFT52N30Q IXYS 14.3216
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0.00000000 download 8 Weeks Surface Mount Tube 2000 HiPerFET™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free 52A No AVALANCHE RATED TO-268-3, D3Pak (2 Leads + Tab), TO-268AA 60MOhm Surface Mount -55°C~150°C TJ 300V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING 4 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 360W 360W Tc 52A 80 ns SILICON N-Channel 60m Ω @ 500mA, 10V 4V @ 4mA 5300pF @ 25V 150nC @ 10V 60ns 25 ns 20V 300V 52A Tc 208A 10V ±20V
BS170_L34Z BS170_L34Z ON Semiconductor 0.0000
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0.00000000 Bulk Obsolete 1 (Unlimited) TO-226-3, TO-92-3 (TO-226AA) Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) BS170 TO-92-3 830mW Ta N-Channel 5Ohm @ 200mA, 10V 3V @ 1mA 40pF @ 10V 500mA Ta 60V
IXFH22N60P IXFH22N60P IXYS 7.1910
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0.00000000 download 30 Weeks Through Hole Tube 2006 HiPerFET™, PolarHT™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 22A 3 AVALANCHE RATED TO-247-3 25.96mm Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 1 Not Qualified 1 TO-247AD DRAIN Single 400W 20 ns 5.5V 400W Tc 22A 150°C SWITCHING 60 ns SILICON N-Channel 350m Ω @ 11A, 10V 5.5V @ 4mA 3600pF @ 25V 58nC @ 10V 20ns 23 ns 30V 600V 22A Tc 66A 10V ±30V
IRF1405PBF IRF1405PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free 169A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-220-3 No SVHC 2.54mm 19.8mm 4.826mm 5.3mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-220AB DRAIN Single 330W 13 ns 4V 330W Tc 130 ns 169A 175°C SWITCHING 130 ns SILICON N-Channel 5.3m Ω @ 101A, 10V 4V @ 250μA 5480pF @ 25V 260nC @ 10V 190ns 110 ns 20V 55V 55V 4 V 75A 169A Tc 680A 560 mJ 10V ±20V
DMT6016LJ3 DMT6016LJ3 Diodes Incorporated 0.0000
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0.00000000 29 Weeks Active 1 (Unlimited) ROHS3 Compliant
IXFX94N50P2 IXFX94N50P2 IXYS 20.4677
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0.00000000 download 30 Weeks Through Hole Tube 2010 HiPerFET™, PolarHV™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 247 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 DRAIN Single 1.3kW 1300W Tc 94A SWITCHING 0.055Ohm SILICON N-Channel 55m Ω @ 500mA, 10V 5V @ 8mA 13700pF @ 25V 220nC @ 10V 30V 500V 94A Tc 240A 3500 mJ 10V ±30V
SSM3K357R,LF SSM3K357R,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) π-MOSV Active 1 (Unlimited) RoHS Compliant SOT-23-3 Flat Leads Surface Mount 150°C MOSFET (Metal Oxide) 1W Ta N-Channel 1.8 Ω @ 150mA, 5V 2V @ 1mA 60pF @ 12V 1.5nC @ 5V 650mA Ta 60V 3V 5V ±12V
NTMFS4C025NT3G NTMFS4C025NT3G ON Semiconductor 0.0000
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0.00000000 download 16 Weeks Tape & Reel (TR) Active 1 (Unlimited) EAR99 ROHS3 Compliant 8-PowerTDFN, 5 Leads not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) 2.55W Ta 30.5W Tc N-Channel 3.41m Ω @ 30A, 10V 2.1V @ 250μA 1683pF @ 15V 26nC @ 10V 20A Ta 69A Tc 30V 4.5V 10V ±20V
SI3438DV-T1-GE3 SI3438DV-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2014 TrenchFET® Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free No 6 SOT-23-6 Thin, TSOT-23-6 35.5mOhm Surface Mount 19.986414mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 6 1 FET General Purpose Power 1 Single 2W 16 ns 2W Ta 3.5W Tc 5.5A SWITCHING 16 ns SILICON N-Channel 35.5m Ω @ 5A, 10V 3V @ 250μA 640pF @ 20V 20nC @ 10V 17ns 10 ns 20V 40V 7.4A 7.4A Tc 20A 4.5V 10V ±20V
ZVN3310FTA ZVN3310FTA Diodes Incorporated 0.0000
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0.00000000 download 17 Weeks Surface Mount Cut Tape (CT) 2009 yes Active 1 (Unlimited) 3 SMD/SMT EAR99 3.04mm ROHS3 Compliant Lead Free 100mA No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.02mm 1.4mm 10Ohm Surface Mount 7.994566mg -55°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE 100mA e3 Matte Tin (Sn) DUAL GULL WING 260 40 3 1 FET General Purpose Powers 100V 1 Single 330mW 3 ns 2.4V 330mW Ta 100mA SWITCHING 4 ns SILICON N-Channel 10 Ω @ 500mA, 10V 2.4V @ 1mA 40pF @ 25V 5ns 5 ns 20V 100V 100V 2.4 V 100mA Ta 5 pF 10V ±20V
DMP6250SE-13 DMP6250SE-13 Diodes Incorporated 0.0000
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0.00000000 download 22 Weeks Surface Mount Cut Tape (CT) 2003 Active 1 (Unlimited) 4 EAR99 6.55mm ROHS3 Compliant Tin 3 HIGH RELIABILITY TO-261-4, TO-261AA 1.65mm 3.55mm Surface Mount 7.994566mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 30 DMP6250 R-PDSO-G4 1 1 DRAIN Single 6.3 ns 1.8W Ta 14W Tc 6.1A SWITCHING 0.25Ohm 91.4 ns SILICON P-Channel 250m Ω @ 1A, 10V 3V @ 250μA 551pF @ 30V 9.7nC @ 10V 10.3ns 39.8 ns 20V -60V 2.1A Ta 60V 8 mJ 4.5V 10V ±20V
IPI60R380C6XKSA1 IPI60R380C6XKSA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 HIGH VOLTAGE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE Halogen Free 83W 15 ns 600V 83W Tc 10.6A SWITCHING 110 ns SILICON N-Channel 380m Ω @ 3.8A, 10V 3.5V @ 320μA 700pF @ 100V 32nC @ 10V 10ns 9 ns 20V 10.6A Tc 10V ±20V
3LN01S-K-TL-E 3LN01S-K-TL-E Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) Obsolete 1 (Unlimited) Non-RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C TJ SMCP
IPS04N03LB G IPS04N03LB G Infineon Technologies 0.0000
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0.00000000 download Tube 2008 OptiMOS™ Obsolete 3 (168 Hours) 3 EAR99 RoHS Compliant LOGIC LEVEL COMPATIBLE TO-251-3 Stub Leads, IPak compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 115W Tc SWITCHING 0.006Ohm 30V SILICON N-Channel 4.3m Ω @ 50A, 10V 2V @ 70μA 5200pF @ 15V 40nC @ 5V 50A 50A Tc 30V 200A 430 mJ 4.5V 10V ±20V
PHB143NQ04T,118 PHB143NQ04T,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 200W Tc SWITCHING 0.0052Ohm 40V SILICON N-Channel 5.2m Ω @ 25A, 10V 4V @ 1mA 2840pF @ 25V 52nC @ 10V 75A 75A Tc 40V 240A 475 mJ 10V ±20V
IPW60R099P6XKSA1 IPW60R099P6XKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED Halogen Free 600V 278W Tc 37.9A N-Channel 99m Ω @ 14.5A, 10V 4.5V @ 1.21mA 3330pF @ 100V 70nC @ 10V 37.9A Tc 10V ±20V
IPW65R150CFDFKSA1 IPW65R150CFDFKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Through Hole Tube 2011 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 1 Single 195.3W 12.4 ns 650V 195.3W Tc 22.4A SWITCHING 52.8 ns SILICON N-Channel 150m Ω @ 9.3A, 10V 4.5V @ 900μA 2340pF @ 100V 86nC @ 10V 7.6ns 5.6 ns 20V 700V 22.4A Tc 72A 10V ±20V
IRLML9301TRPBF IRLML9301TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 3 EAR99 3.0226mm ROHS3 Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.12mm 1.397mm 64MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE IRLML9301TRPBF e3 Matte Tin (Sn) DUAL GULL WING 1 Other Transistors 1 Single 1.3W 9.6 ns -2.4V 1.3W Ta 21 ns -3.6A 150°C SWITCHING 16 ns SILICON P-Channel 64m Ω @ 3.6A, 10V 2.4V @ 10μA 388pF @ 25V 4.8nC @ 4.5V 19ns 15 ns 20V -30V -1.3 V 3.6A Ta 30V 4.5V 10V ±20V
IPL65R310E6AUMA1 IPL65R310E6AUMA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ E6 Obsolete 2A (4 Weeks) 4 RoHS Compliant Contains Lead 4 4-PowerTSFN Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NO LEAD NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 650V 104W Tc 13.1A SWITCHING 0.31Ohm SILICON N-Channel 310m Ω @ 4.4A, 10V 3.5V @ 400μA 950pF @ 100V 45nC @ 10V 13.1A Tc 36A 290 mJ 10V ±20V
SISA18ADN-T1-GE3 SISA18ADN-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 TrenchFET® Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant No 8 PowerPAK® 1212-8 Unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL C BEND S-PDSO-C5 FET General Purpose Power 1 DRAIN Single 19.8W 1.2V 3.2W Ta 19.8W Tc 38.3A SWITCHING 0.0075Ohm 15 ns SILICON N-Channel 7.5m Ω @ 10A, 10V 2.4V @ 250μA 1000pF @ 15V 21.5nC @ 10V 10ns 7 ns -16V 30V 38.3A Tc 70A 5 mJ 4.5V 10V +20V, -16V
STD110NH02LT4 STD110NH02LT4 STMicroelectronics 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) STripFET™ III yes Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 80A TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ 24V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING 260 30 STD11 3 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 125W 125W Tc 80A SWITCHING 0.005Ohm 69 ns SILICON N-Channel 5m Ω @ 40A, 10V 1V @ 250μA 4450pF @ 15V 93nC @ 10V 224ns 40 ns 20V 24V 80A Tc 320A 900 mJ 5V 10V ±20V
IXFT24N80P IXFT24N80P IXYS 0.0000
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0.00000000 download 26 Weeks Surface Mount Tube 2006 HiPerFET™, PolarHT™ yes Active 1 (Unlimited) 2 ROHS3 Compliant AVALANCHE RATED TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 650W 650W Tc 24A SWITCHING 0.4Ohm 75 ns SILICON N-Channel 400m Ω @ 12A, 10V 5V @ 4mA 7200pF @ 25V 105nC @ 10V 27ns 24 ns 30V 800V 24A Tc 55A 1500 mJ 10V ±30V
NTTS2P02R2G NTTS2P02R2G ON Semiconductor 0.0000
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0.00000000 download LAST SHIPMENTS (Last Updated: 3 days ago) Surface Mount Tape & Reel (TR) 2006 yes Obsolete 1 (Unlimited) 8 EAR99 RoHS Compliant Lead Free -2.4A 8 LOGIC LEVEL COMPATIBLE 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Surface Mount -55°C~150°C TJ -20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 260 40 8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE 780mW 780mW Ta 2.4A SWITCHING 0.09Ohm 33 ns SILICON P-Channel 90m Ω @ 2.4A, 4.5V 1.4V @ 250μA 550pF @ 16V 18nC @ 4.5V 31ns 31 ns 8V -20V 2.4A Ta 20V 2.5V 4.5V ±8V
IPW90R500C3FKSA1 IPW90R500C3FKSA1 Infineon Technologies 0.0000
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0.00000000 download Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-247AD 156W Tc SWITCHING 0.5Ohm 900V SILICON N-Channel 500m Ω @ 6.6A, 10V 3.5V @ 740μA 1700pF @ 100V 68nC @ 10V 11A 11A Tc 900V 24A 388 mJ 10V ±20V
BSS123L6327HTSA1 BSS123L6327HTSA1 Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 1999 SIPMOS® yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant No 3 LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL GULL WING 260 40 3 1 SINGLE WITH BUILT-IN DIODE 360mW 2.7 ns 360mW Ta 170mA 6Ohm 9.9 ns SILICON N-Channel 6 Ω @ 170mA, 10V 1.8V @ 50μA 69pF @ 25V 2.67nC @ 10V 3.1ns 25 ns 20V 170mA Ta 100V 4.5V 10V ±20V
DMN6017SK3-13 DMN6017SK3-13 Diodes Incorporated 0.0000
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0.00000000 download 17 Weeks Tape & Reel (TR) Active 1 2 EAR99 ROHS3 Compliant HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 50W Tc SWITCHING 0.018Ohm 60V SILICON N-Channel 18m Ω @ 6A, 10V 3V @ 250μA 2711pF @ 15V 55nC @ 10V 11A 43A Tc 60V 70A 32 mJ 4.5V 10V ±20V
IPI35CN10N G IPI35CN10N G Infineon Technologies 0.0000
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0.00000000 download Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 260 40 3 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 58W Tc SWITCHING 0.035Ohm 100V SILICON N-Channel 35m Ω @ 27A, 10V 4V @ 29μA 1570pF @ 50V 24nC @ 10V 27A 27A Tc 100V 108A 47 mJ 10V ±20V
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